Retarded elasticity in B2O3GeO2 glasses

The retarded elasticity was investigated for B₂O₃GeO₂ glasses having network structure in the glass transition range by using a compressive method. The compliance (J_∞) determined at the final stage of each measurement displayed a maximum for roughly constant viscosity (η ? 10¹⁴ P) in all the B₂O₃GeO₂ glasses and was simulated by the same equation applied for AsS glasses reported in a previous paper [1].

$\text{J}{}_{\mathrm{\infty }}\text{=(1?k}{}_2\text{keta;}{}_{\mathrm{G}}\text{keta;}\text{)[?}{}_1\text{(}\text{k}{}_1\text{keta;}\text{)+?}{}_2\text{(}\text{nk}{}_1\text{keta;}\text{)]}$

, where $\text{K}{}_1\text{, k}{}_2\text{, ?}{}_1\text{, ?}{}_2\text{and}\text{n}$ are parameters and η_G is the viscosity related to the retarded elasticity. The terms (k₁/η) and (nk₁/η) are assumed to be equal to one for all their values exceeding one. For B₂O₃GeO₂ glasses, the deformation due to the retarded elasticity could be alloted to two structural elements: the first element related to the term $\text{?}{}_1\text{(k}{}_1\text{/η)}$ and the second element related to the term $\text{?}{}_2\text{(nk}{}_1\text{/η)}$. The values of $\text{?}{}_1$ showed almost no variance with the glass composition, but $\text{?}{}_2$ had a minimum at the composition of 50 mol% GeO₂. These data suggest that the contribution of the second element is the smallest at B₂O₃/GeO₂ = 1. The values of k₂ were close to that of As₂S₃ glass having the network structure. k₁ and n (or nk₁) were almost constant regardless of the composition, respectively. These data suggest that the inhibition due to the viscosity starts at an approximately constant viscosity in B₂O₃GeO₂ glasses.     

Partial correlations in Ni60Nb40 metallic glass

Combined X-ray and neutron diffraction experiments were performed on the Ni₆₀Nb₄₀ metallic glass samples prepared by rapid quenching from the melt with natural Ni^nat and isotope ⁵⁸Ni, respectively. The partial structure factors were separated for the three kinds of atomic pairs: NiNi, NiNb and NbNb. The partial distribution functions were calculated by means of Fourier transformation and the following atomic distances were obtained: $\text{r}{}_{\mathrm{<mtext>NiNi</mtext>}}\text{=2.52}\text{A}\text{?}\text{, r}{}_{\mathrm{<mtext>NiNb</mtext>}}\text{=2.72}\text{A}\text{?}$ and $\text{r}{}_{\mathrm{<mtext>NbNb</mtext>}}\text{=2.70}\text{A}\text{?}$. The values n_NiNi=7.3, n_NiNb=4.5, n_NbNi=6.8 and n_NbNb=5.4 were obtained for the number of nearest neighbours.     

Energy transfer in Eu3+-Yb3+ and Tb3+-Yb3+ system in glasses

The behavior of the phonon-assisted energy transfer between trivalent rare-earth ions in glasses was investigated. The ions Eu³⁺ and Tb³⁺ as energy donors and Yb³⁺ as acceptor were selected. The energy gap between the levels of the donor and acceptor was estimated on the basis of the energy diagram of each ion determined from absorption and emission spectra. The probability for the transfers of (Eu, ⁵D₀-⁷F₆): (Yb, ${}^2\text{F}{}_{\mathrm{<mtext>7</mtext><mtext>2</mtext>}}\text{-}{}^2\text{F}{}_{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$) and (Tb, ⁵D₄-⁷F₀): (Yb, ${}^2\text{F}{}_{\mathrm{<mtext>7</mtext><mtext>2</mtext>}}\text{-}{}^2\text{F}{}_{\mathrm{<mtext>5</mtext><mtext>2</mtext>}}$) in silicate, borosilicate, phosphate and germanate glasses was measured in the temperature range of liquid-nitrogen temperature - 650K. The probability of transfer was the smallest in phosphate glass and B₂O₃ had the effect of increasing it. In germanate glass the dependence of the probability of the energy gap was relatively weak. These results were correlated to the difference in the phonon energy and the strength of the electron-lattice coupling in each glass.     

Mass spectrometric study on chemical transport of VO2

The analysis of gas in the chemical transport reaction of VO₂ using TeCl₄ as a transport agent was carried out with a quadrupole mass spectrometer. In the transport reaction from 600 to 500°C, it was found that the oxygen and vanadium of VO₂ were transported in the form of VOCl₃ and TeOCl₂ gases; the transport reaction was $\text{VO}{}_2\text{+}\text{3}\text{2}\text{TeCl}{}_4\text{= VOCl}{}_3\text{+ TeOCl}{}_2\text{+}\text{1}\text{2}\text{TeCl}{}_2$. The transport reaction from 900°C to 800°C was assumed to be $\text{VO}{}_2\text{+}\text{3}\text{2}\text{TeCl}{}_2\text{= VOCl}{}_3\text{+}\text{1}\text{2}\text{O}{}_2\text{+}\text{3}\text{4}\text{TeCl}{}_2$. In the transport at high temperature, the oxygen partial pressure estimated from the mass spectrum was considerably higher than that in equilibrium with VO₂ phase. In this paper a study of the chemical transport of the system VO₂-TeCl₄ is presented.     

XPS study of glassy Pd80Ge20

An X-ray photoemission and Auger electron spectroscopy study of the electronic structure of Pd₈₀Ge₂₀ alloy in its glassy and crystalline states is reported. The glassy state shows some modifications in the valence band structure, symmetry of the Pd $\text{3}\text{d}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}\text{?3}\text{d}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ spin-orbit doublet and a shift in M₄₅-V-V Auger transition of Pd. Analysis of the chemical shifts in the core-level binding energies of the constituents indicates negligible charge transfer from the metalloid atom (Ge) to d-band of the Pd.     

Crystal growth of SnO2 by chemical transport method

Single crystals of SnO₂ were grown by the chemical transport method from the powder prepared by heating hydrous stannic oxide. The transport reactions were carried out when iodine and sulfur were simultaneously used as transporting agent, and fine crystals of a few millimeters in dimensions were grown after a ten-day transport; the transport proceeded from 1100°C (charge) to 900°C part in a silica ampoule. The crystals were identified as SnO₂ (cassiterite) by the Weissenberg method. Thermodynamic calculations led to the equilibrium $\text{SnO}{}_2\text{(s) + I}{}_2\text{(g)}\text{+}\text{1}\text{2}\text{S}{}_2\text{(g)}\text{?}\text{SnI}{}_2\text{(g) + SO}{}_2\text{(g)}$ for this transport reaction.     

LPE growth kinetics of CaGe-Substituted EuTm2Fe5O12 garnet films

The diffusion-reaction growth melts fluxed with PbO-B₂O₃-Fe₂O₃, has been extended to include a thermally-activated diffusion term. The fluxed melt had a lower PbO : B₂O₃ ratio (11 : 1) than that generally used (≈16 : 1) for garnet LPE films. Measured growth rates for LPE films, produced from melts with four different concentrations of CaGe-Substituted EuTm₂Fe₅O₂ garnet, fit the model with: diffusivity, $\text{D (cm}{}^2\text{/s) = 0.06 exp(}\text{-1.0 eV}\text{kT}\text{)}$; reactivity, $\text{K (cm/s) = 8000 exp(}\text{-1.61 eV}\text{kT}\text{)}$; viscosity, $\text{v (}\text{cm}{}^2\text{s}\text{) = 0.01}$; and concentration, $\text{c}{}_{\mathrm{e}}\text{(}\text{g}\text{cm}{}^3\text{) = 4220 exp ?}\text{1.0678 eV}\text{kT}$ for rotation rates ω (rpm) = 36 to 196 in the growth temperature range 890 to 965°C. It is shown that the garnet melt concentration terms are the most critical ones in determining the growth rate, hence the activation energy (heat of solution) for the equilibruim concentration is reported to five significant figures. Evaluating the D and the K effects by both a numerical (results given above) and an analytic method demonstrates that these parameters are least critical in determining the growth rate in this case.     

Electrical,structural and optical properties of amorphous carbon

The planar and transverse electrical resistivity of amorphous carbon (a-C) films getter-sputtered at low temperature (77–95 K) is well-fitted by the expression $\text{? = ?}{}_0\text{exp}\text{(T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ The exponent T₀ being approximately the same in both cases (≈ 7 × 10⁷ K) suggests that the amorphous films are isotropic. Films thinner than 600 Å display a two-dimensional hopping conductivity from which one deduces a density of states N(E_F) at the Fermi level of 10¹⁸ eV^?1 cm^?3 and a radius of the localized wave functions (a) of 12 Å. Tunneling experiments and optical absorption measurements are consistent with a pseudogap of approximately 0.8 eV. Electron diffraction experiments indicate that a-C films consist of a mixture of diamond and graphite bonds; this fact taken in the light of the other experiments would suggest that the graphite bonds act as the localized conduction states.     

Temperature variation of the mobility gap in non-polar amorphous semiconductors

For a non-polar amorphous semiconductor such as a-Si, we derive an explixit formula for (?E_g/?T)_V, the derivative with temperature of the mobility gap E_g at constant volume V. Within the framework of second-order perturbation theory for the electron-phonon (eφ) interaction, many of our physical assumptions are fundamentally different from those that apply to the crystal phase. The principal ingredients of our model are: (1) the random-phase-model (RPM); (2) the principle of non-conservation of particle momentum in the eφ interaction; and (3) the deformation potential approximation. Narrowing of E_g is found with increasing values of the temperature T. At very low T, we have $\text{(?E}{}_{\mathrm{<mtext>g</mtext>}}\text{/?T)}{}_{\mathrm{<mtext>V</mtext>}}\text{≌ ? ¢A · c}{}_{\mathrm{V}}\text{(T)}$, where c_V(T) is the average lattice specific heat per mode at constant volume and ¢A is a positive dimensionless quantity in the model. By contrast with low-temperature behavior of the crystal, this result implies that the mobility gap at constant volume dynamically responds to the phonomic “gas” of the disordered lattice. The high-T limit yields behavior quite similar to that of the crystal phase. We find $\text{(?E}{}_{\mathrm{<mtext>g</mtext>}}\text{/?T)}{}_{\mathrm{V}}\text{≌ ? x ¢A · k}{}_{\mathrm{<mtext>B</mtext>}}$, where k_B is Boltzmann's constant and the parameter x, expected to be confined to the interval $\text{1}\text{2}\text{? x ? 1}$, measures the admixture of the optical-phonon and acoustical-phonon coupling strengths.     

Silver sulfide based glasses (I). Glass forming regions,structure and ionic conduction of glasses in GeS2Ag2S and GeS2Ag2SAgI systems

Ag₂S forms with GeS₂ stable glasses over a wide range of compositions (0–55% Ag₂S mol%). In the same system, more complex glasses obtained by dissolving silver iodide have been synthesized with up to 50 mol% AgI.Raman spectra are presented and a vibrational assignment in terms of bridging and non-bridging sulfur has been made. The electrical conductivity of these glasses has been measured over a temperature range (?50°C? + 50°C) and for various compositions by the complex impedance diagram method. At 25°C, the conductivity reached a maximum value of 6 × 10^?3 Ω^?1 cm^?1. Whatever the glass used, the same limit value of conductivity $\text{(σ ? 10 su?2 Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$) and activation energy ($\text{E}{}_{\mathrm{\sigma }}\text{? 0.25}\text{eV}$) are obtained for the highest content of silver iodide. A conduction mechanism is proposed.     

Spinodal decomposition during continuous cooling of a PbOB2O3Al2O3 glass

Spinodal decomposition during continuous cooling of the PbOB₂O₃Al₂O₃ quasi-binary glass system was analysed by numerical integration of Cook's differential equation (which includes the contribution of random density fluctuations) for small angle X-ray scattering (SAXS) intensity. The SAXS curves derived from the calculations have a wide range of k-Fourier components (0 < k < k_c) for which a positive amplification factor occurs and they show a “crossover” point at $\text{k}{}_{\mathrm{c}}\text{= 0.155}\text{A}\text{?}{}^{\mathrm{?1}}$. The wavenumber which receives maximal amplification, k_m, increases with the cooling rate, Q, as $\text{Q}{}^{\mathrm{<mtext>1</mtext><mtext>n</mtext>}}$, with n = 10.9. This Q dependence of k_m is similar to that predicted by Huston et al., however our results show a higher value of n. The dependence on Q and k_m of the SAXS intensity I(k_m) was also deduced. The measurements of SAXS curves were performed on glass samples prepared by the splat-cooling technique. Because of the difficulties which arise in the determination of the cooling rate of the samples, the only experimental results that could be compared with the theory are the k_m dependence of I and the value of k_c. These results are satisfactorily understood in terms of the present analysis.     

Pressure dependence of the elastic moduli of glasses in the K2OSiO2 system

The elastic moduli and their variation with pressure have been determined for three glass compositions in the K₂OSiO₂ glass system. The results may be summarized:

     

13.

Electrical properties of glassy As_xGe₁₀Te_90−x alloys     

O.S. Panwar  A. Kumar  D.R. Goyal  K.K. Srivastava  K.N. Lakshminarayan 《Journal of Non》1978,30(1):37-44

This paper analyses the electrical properties of glassy alloys of As_xGe₁₀Te_90?x, while reporting the conductivity and dielectric constant of As₅Ge₁₀Te₈₅ and As₁₅Ge₁₀Te₇₅ compositions in the temperature range 77–383 K and the frequency range from dc to 5 MHz. The dc conductivity has been shown to be of the form

The ratio σ₀₁/σ₀₂ is of the order of 10⁶. ΔE₁, the higher temperature activation energy, is dependent on the composition, while ΔE₂, the lower temperature activation energy, is less dependent on the composition. The dielectric constant has been found to be independent of temperature and frequency up to about 253 K. However, at higher temperatures, it becomes activated and proportional to log ω.Some common features of As_xGe₁₀Te_90?x are a kink in dc conductivity, a ω^0.8 relationship for ac conductivity, no evidence of variable-range hopping at low temperatures, field-dependent conductivity and memory switching. The data can be interpreted in terms of the dangling-bond theory of Mott and his collaborators. A high density of states of the order of 10²⁰eV^?1 cm^?3 near the Fermi level may be expected.     

14.

On mechanisms of structural relaxation in a Pd₄₈Ni₃₂P₂₀ glass     

H.S. Chen 《Journal of Non》1981,46(3):289-305

Structural relaxation processes are investigated calorimetrically for a pre-conditioned Pd₄₈Ni₃₂P₂₀ glass over a wide temperature range from well below to just above the glass transition. The low temperature anneals further stabilize the glassy structure. Upon heating, the annealed sample shows an excess endothermic specific heat ΔC_p above the annealing temperature and completely recovers the initial enthalpy before any manifestation of glass transition, T_g. Significantly the ΔC_p peak evolves in a continuous manner with annealing time. A physically reasonable activation energy spectrum $\text{N}{}_0{}^1\text{(Q)}$ is obtained with the proper choice of coupling constants which are dependent on annealing temperature. Results suggest the existence of localized relaxation modes which do not contribute to macroscopic flow. A concept of distribution in glass transition temperatures H(T_g,m) is conceived to account for the reversible relaxation with temperature. A model glass transition based on percolation theory is proposed and is found to reproduce the calorimetric relaxation phenomena well.     

15.

The structure analysis liquid Sb₂Se₃ by neutron diffraction     

Tsuneo Satow  Osamu Uemura  Shigemoto Akaike  Shigeru Tamaki 《Journal of Non》1978,29(2):215-221

The radial distribution analysis of liquid Sb₂Se₃ at 670, 720 and 770°C is carried out by the neutron diffraction method. A small but apparent maximum is found at $\text{K = 1.2}\text{A}\text{?}{}^{\mathrm{?1}}$ in the structure factor. The interatomic distance and the coordination number are 2.74 Å and 2.84 respectively, at 670°C. These results suggest that intramolecular bonds in the crystalline Sb₂Se₃ remain unbroken in the liquid state. The general feature of the structure factor and the distribution function for liquid Sb₂Se₃ is similar to that for the amorphous state. However, it is clear that the liquid phase tends to have a similar atomic arrangement to that of liquid tellurium.     

16.

Theory of molten zone shape and stability     

S.R. Coriell  M.R. Cordes 《Journal of Crystal Growth》1977

The Laplace-Young capillary equation for the shape of an axisymmetric liquid-vapor interface has been solved numerically for boundary conditions relevant to a model of the floating zone process. The stability of these solutions with respect to axisymmetric and asymmetric perturbations which conserve volume has been determined via the conjugate point criterion of the calculus of variations. The liquid zone shape is governed by five dimensionless parameters: $\text{R}{}_{\mathrm{m}}\text{R}{}_{\mathrm{f}}$, $\text{L}\text{Rf}$, $\text{V}\text{φR}{}^2{}_{\mathrm{f}}\text{L}$, $\text{? = ρg}\text{R}{}^2{}_{\mathrm{f}}\text{γ}$, and $\text{?}{}_{\mathrm{R}}\text{= ρΩ}{}^2\text{R}{}^3{}_{\mathrm{f}}\text{γ}$, where R_m and R_f are the radii of the melting and freezing solids, respectively, L is zone length , V is the zone volume, ρ is the density difference between liquid vapor, g is the gravitational acceleration, γ is the liquid-vapor surface tension, and Ω is the constant angular velocity of the uniformly rotating zone. For growth of constant diameter crystals, the angle ø_f, measured between the meniscus and the growth axis at the freezing interface, is constant. For R_m = R_f, ?_R = 0, and ø_f = 0, the maxi mum value of ? for which a stable liquid zone exists has been calculated for various values of L/R_f. For some values of ?, two different stable liquid zones with different volumes (but all other parameters identical) give the same value of ø_f.     

17.

Crystallization processes in amorphous Zr₅₄Cu₄₆ alloy     

H.R. Wang  Z.Q. ShiX.Y. Teng  G.H. Min 《Journal of Non》2002,311(1):36-41

The crystallization of amorphous Zr₅₄Cu₄₆ alloy was investigated by using X-ray diffraction (XRD), differential scanning calorimetry (DSC) and transmission electron microscopy (TEM) techniques. The experimental results show that an endothermic peak in DSC traces for amorphous Zr₅₄Cu₄₆ alloy exists at about 1006 K, indicating following eutectoid reaction occurs, namely, Cu₁₀Zr₇+CuZr₂↔CuZr in amorphous Zr₅₄Cu₄₆ alloy during heating. With increasing the heating rate, the glass transition temperature T_g and onset crystallization temperature T_x of amorphous Zr₅₄Cu₄₆ alloy increase in parallel, and the supercooled liquid region ΔT_x (=T_x−T_g) holds almost constant with an average value of 44 K. Both XRD and TEM results prove that Cu₁₀Zr₇ and CuZr₂ are main crystallization products for amorphous Zr₅₄Cu₄₆ alloy under continuous heating conditions. No CuZr phase is identified because of its small precipitation amount. Finally, the crystallization processes of amorphous Zr₅₄Cu₄₆ alloy were summarized.     

18.

Effect of thermal history on conductivity and electrical relaxation in alkali silicate glasses     

Lawrence P. Boesch  Cornelius T. Moynihan 《Journal of Non》1975,17(1):44-60

Electrical conductivity σ₀ and electric field relaxation measurements have been carried out as a function of thermal history for two alkali silicate glasses, Na₂O3SiO₂ and K₂O3SiO₂. Specimens of each glass with three different thermal histories, two of the anneal-and-quench type and one of the rate-cool type, were studied. The average structural or fictive temperature T_f of each of the specimens was characterized by measuring their indices of refraction. Effects of thermal history on σ₀ and its activation enthalpy $\text{H}{}_{\mathrm{\sigma }}{}^1$ were in accord with results of previous investigators. That is, for a given type of thermal history σ₀ was lower and $\text{H}{}_{\mathrm{\sigma }}{}^1$ higher the lower T_f. In addition it was found that for two specimens with the same T_f or index of refraction but different thermal histories the rate-cooled specimen exhibited a lower conductivity than the annealed-and-quenched specimen, in accord with the results of Ritland. The distribution of relaxation times τ_σ for decay of the electric field due to ionic migration was found to be due primarily to a distribution in the pre-exponential term ln $\text{τ}{}_{\mathrm{\sigma }}{}^1$ in the equation $\text{ln}\text{τ}{}_{\mathrm{\sigma }}\text{=}\text{ln}\text{τ}{}_{\mathrm{\sigma }}{}^1\text{+ H}{}^1\text{/RT}$; the distribution in $\text{H}{}^1$ was extremely narrow. Differences in thermal history caused small differences in the distribution of τ_σ, but no difference in the average activation enthalpy $\text{〈H}{}^1\text{〉}$ for τ_σ. From this result it appeared that the dependence of the conductivity activation enthalpy $\text{H}{}_{\mathrm{\sigma }}{}^1$ on thermal history was due to the effect of thermal history on the temperature dependence of the distribution in τ_σ.     

19.

Nucleation kinetics of sodium disilicate     

L.C. Klein  C.A. Handwerker  D.R. Uhlmann 《Journal of Crystal Growth》1977

The kinetics of crystal nucleation in Na₂O · 2SiO₂ have been determined over the range of undercoolings between 173 and 373°C. The plot of log(I_v?) versus $\text{1}\text{ΔT}{}^2{}_{\mathrm{r}}\text{T}{}^3{}_{\mathrm{r}}$ is a straight line of negative slope over some 13 orders of magnitude in I_v. The slope of this relation indicates a nucleation barrier of about 45 kT at ΔT_r = 0.2, and the intercept at $\text{1}\text{ΔT}{}^2{}_{\mathrm{r}}\text{T}{}^3{}_{\mathrm{r}}\text{= 0}$ is 10²⁶ cm^-3 sec^-1. poise. The results are in good agreement with predictions of the theory of homogeneous nucleation, even in the pre-exponential factor.     

20.

Electrical and optical properties of amorphous boron and amorphous concept for ß-rhombohedral boron     

A.A. Berezin  O.A. Golikova  M.M. Kazanin  T. Khomidov  D.N. Mirlin  A.V. Petrov  A.S. Umarov  V.K. Zaitsev 《Journal of Non》1974,16(2):237-246

Measurements of the conductivity (σ), thermoelectric power (S) and thermal conductivity (κ) of amorphous boron are made over wide temperature ranges (T = 77–850 K for σ, T = 300–850 K for S and T = 80–1100 K for κ). The room temperature spectral dependencies of the reflection (R) and absorption (α) coefficients are determined for the wavelength intervals 2–25 μm and 1.3–25 μm respectively. The I–V characteristics are also studied and shown to be consistent with the Poole-Frenkel law.The value obtained for the thermal energy gap of amorphous boron (1.3 eV) is slightly smaller than that of crystal ß-rhombohedral boron (1.4 eV). The temperature dependence of the electrical conductivity can be satisfactorily described by the Mott law $\text{ln}\text{σ ≈ ?(T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$, where $\text{T}{}_0\text{? 10}{}^8\text{K}$. This gives an estimate, N ≈ 10¹⁸ cm^?3, for the concentration of trapping levels responsible for the hopping conduction. The value $\text{?}{}_0\text{? 9}$ is found from the spectral dependence of R while α has Urbach-like character $\text{? α ≈}\text{exp}\text{(}\text{h}\text{?}\text{ω/Δ)}$, where $\text{Δ ? 0.19}\text{eV}$.A comparison is made between amorphous boron and crystalline ß-rhombohedral boron. Because of the very complex crystal structure and the large dimensions of the unit cell of ß-boron, some of its physical properties could be qualitatively described on the basis of the so-called ‘amorphous concept’.     

Property/Composition	0.15K2O–0.85SiO2	0.25K2O–0.75SiO2	0.33K2O–0.67SiO2
Shear modulus $\text{G(}\text{kb}\text{)}$	266	241	231
Bulk modulus $\text{K}{}_{\mathrm{<mtext>s</mtext>}}\text{(}\text{kb}\text{)}$	310	283	273
Young's modulus $\text{E(}\text{kb}\text{)}$	620	564	540
($\text{?K}{}_{\mathrm{<mtext>s</mtext>}}\text{/?P)}{}_{\mathrm{<mtext>500\; </mtext><mtext>K</mtext>}}$	?5.1	?4.4	?3.9
($\text{?G/?P)}{}_{\mathrm{<mtext>500\; </mtext><mtext>K</mtext>}}$	?2.8	?2.6	?2.5
Poisson's ratio σ	0.167	0.168	0.170
($\text{?σ/?P) (}\text{x}\text{10}{}^{\mathrm{?3}}$)
(kb?1)	?1.5	?1.2	?0.95

Electrical properties of glassy AsxGe10Te90−x alloys

This paper analyses the electrical properties of glassy alloys of As_xGe₁₀Te_90?x, while reporting the conductivity and dielectric constant of As₅Ge₁₀Te₈₅ and As₁₅Ge₁₀Te₇₅ compositions in the temperature range 77–383 K and the frequency range from dc to 5 MHz. The dc conductivity has been shown to be of the form

The ratio σ₀₁/σ₀₂ is of the order of 10⁶. ΔE₁, the higher temperature activation energy, is dependent on the composition, while ΔE₂, the lower temperature activation energy, is less dependent on the composition. The dielectric constant has been found to be independent of temperature and frequency up to about 253 K. However, at higher temperatures, it becomes activated and proportional to log ω.Some common features of As_xGe₁₀Te_90?x are a kink in dc conductivity, a ω^0.8 relationship for ac conductivity, no evidence of variable-range hopping at low temperatures, field-dependent conductivity and memory switching. The data can be interpreted in terms of the dangling-bond theory of Mott and his collaborators. A high density of states of the order of 10²⁰eV^?1 cm^?3 near the Fermi level may be expected.     

On mechanisms of structural relaxation in a Pd48Ni32P20 glass

Structural relaxation processes are investigated calorimetrically for a pre-conditioned Pd₄₈Ni₃₂P₂₀ glass over a wide temperature range from well below to just above the glass transition. The low temperature anneals further stabilize the glassy structure. Upon heating, the annealed sample shows an excess endothermic specific heat ΔC_p above the annealing temperature and completely recovers the initial enthalpy before any manifestation of glass transition, T_g. Significantly the ΔC_p peak evolves in a continuous manner with annealing time. A physically reasonable activation energy spectrum $\text{N}{}_0{}^1\text{(Q)}$ is obtained with the proper choice of coupling constants which are dependent on annealing temperature. Results suggest the existence of localized relaxation modes which do not contribute to macroscopic flow. A concept of distribution in glass transition temperatures H(T_g,m) is conceived to account for the reversible relaxation with temperature. A model glass transition based on percolation theory is proposed and is found to reproduce the calorimetric relaxation phenomena well.     

The structure analysis liquid Sb2Se3 by neutron diffraction

The radial distribution analysis of liquid Sb₂Se₃ at 670, 720 and 770°C is carried out by the neutron diffraction method. A small but apparent maximum is found at $\text{K = 1.2}\text{A}\text{?}{}^{\mathrm{?1}}$ in the structure factor. The interatomic distance and the coordination number are 2.74 Å and 2.84 respectively, at 670°C. These results suggest that intramolecular bonds in the crystalline Sb₂Se₃ remain unbroken in the liquid state. The general feature of the structure factor and the distribution function for liquid Sb₂Se₃ is similar to that for the amorphous state. However, it is clear that the liquid phase tends to have a similar atomic arrangement to that of liquid tellurium.     

Theory of molten zone shape and stability

The Laplace-Young capillary equation for the shape of an axisymmetric liquid-vapor interface has been solved numerically for boundary conditions relevant to a model of the floating zone process. The stability of these solutions with respect to axisymmetric and asymmetric perturbations which conserve volume has been determined via the conjugate point criterion of the calculus of variations. The liquid zone shape is governed by five dimensionless parameters: $\text{R}{}_{\mathrm{m}}\text{R}{}_{\mathrm{f}}$, $\text{L}\text{Rf}$, $\text{V}\text{φR}{}^2{}_{\mathrm{f}}\text{L}$, $\text{? = ρg}\text{R}{}^2{}_{\mathrm{f}}\text{γ}$, and $\text{?}{}_{\mathrm{R}}\text{= ρΩ}{}^2\text{R}{}^3{}_{\mathrm{f}}\text{γ}$, where R_m and R_f are the radii of the melting and freezing solids, respectively, L is zone length , V is the zone volume, ρ is the density difference between liquid vapor, g is the gravitational acceleration, γ is the liquid-vapor surface tension, and Ω is the constant angular velocity of the uniformly rotating zone. For growth of constant diameter crystals, the angle ø_f, measured between the meniscus and the growth axis at the freezing interface, is constant. For R_m = R_f, ?_R = 0, and ø_f = 0, the maxi mum value of ? for which a stable liquid zone exists has been calculated for various values of L/R_f. For some values of ?, two different stable liquid zones with different volumes (but all other parameters identical) give the same value of ø_f.     

Crystallization processes in amorphous Zr54Cu46 alloy

The crystallization of amorphous Zr₅₄Cu₄₆ alloy was investigated by using X-ray diffraction (XRD), differential scanning calorimetry (DSC) and transmission electron microscopy (TEM) techniques. The experimental results show that an endothermic peak in DSC traces for amorphous Zr₅₄Cu₄₆ alloy exists at about 1006 K, indicating following eutectoid reaction occurs, namely, Cu₁₀Zr₇+CuZr₂↔CuZr in amorphous Zr₅₄Cu₄₆ alloy during heating. With increasing the heating rate, the glass transition temperature T_g and onset crystallization temperature T_x of amorphous Zr₅₄Cu₄₆ alloy increase in parallel, and the supercooled liquid region ΔT_x (=T_x−T_g) holds almost constant with an average value of 44 K. Both XRD and TEM results prove that Cu₁₀Zr₇ and CuZr₂ are main crystallization products for amorphous Zr₅₄Cu₄₆ alloy under continuous heating conditions. No CuZr phase is identified because of its small precipitation amount. Finally, the crystallization processes of amorphous Zr₅₄Cu₄₆ alloy were summarized.     

Effect of thermal history on conductivity and electrical relaxation in alkali silicate glasses

Electrical conductivity σ₀ and electric field relaxation measurements have been carried out as a function of thermal history for two alkali silicate glasses, Na₂O3SiO₂ and K₂O3SiO₂. Specimens of each glass with three different thermal histories, two of the anneal-and-quench type and one of the rate-cool type, were studied. The average structural or fictive temperature T_f of each of the specimens was characterized by measuring their indices of refraction. Effects of thermal history on σ₀ and its activation enthalpy $\text{H}{}_{\mathrm{\sigma }}{}^1$ were in accord with results of previous investigators. That is, for a given type of thermal history σ₀ was lower and $\text{H}{}_{\mathrm{\sigma }}{}^1$ higher the lower T_f. In addition it was found that for two specimens with the same T_f or index of refraction but different thermal histories the rate-cooled specimen exhibited a lower conductivity than the annealed-and-quenched specimen, in accord with the results of Ritland. The distribution of relaxation times τ_σ for decay of the electric field due to ionic migration was found to be due primarily to a distribution in the pre-exponential term ln $\text{τ}{}_{\mathrm{\sigma }}{}^1$ in the equation $\text{ln}\text{τ}{}_{\mathrm{\sigma }}\text{=}\text{ln}\text{τ}{}_{\mathrm{\sigma }}{}^1\text{+ H}{}^1\text{/RT}$; the distribution in $\text{H}{}^1$ was extremely narrow. Differences in thermal history caused small differences in the distribution of τ_σ, but no difference in the average activation enthalpy $\text{〈H}{}^1\text{〉}$ for τ_σ. From this result it appeared that the dependence of the conductivity activation enthalpy $\text{H}{}_{\mathrm{\sigma }}{}^1$ on thermal history was due to the effect of thermal history on the temperature dependence of the distribution in τ_σ.     

Nucleation kinetics of sodium disilicate

The kinetics of crystal nucleation in Na₂O · 2SiO₂ have been determined over the range of undercoolings between 173 and 373°C. The plot of log(I_v?) versus $\text{1}\text{ΔT}{}^2{}_{\mathrm{r}}\text{T}{}^3{}_{\mathrm{r}}$ is a straight line of negative slope over some 13 orders of magnitude in I_v. The slope of this relation indicates a nucleation barrier of about 45 kT at ΔT_r = 0.2, and the intercept at $\text{1}\text{ΔT}{}^2{}_{\mathrm{r}}\text{T}{}^3{}_{\mathrm{r}}\text{= 0}$ is 10²⁶ cm^-3 sec^-1. poise. The results are in good agreement with predictions of the theory of homogeneous nucleation, even in the pre-exponential factor.     

Electrical and optical properties of amorphous boron and amorphous concept for ß-rhombohedral boron

Measurements of the conductivity (σ), thermoelectric power (S) and thermal conductivity (κ) of amorphous boron are made over wide temperature ranges (T = 77–850 K for σ, T = 300–850 K for S and T = 80–1100 K for κ). The room temperature spectral dependencies of the reflection (R) and absorption (α) coefficients are determined for the wavelength intervals 2–25 μm and 1.3–25 μm respectively. The I–V characteristics are also studied and shown to be consistent with the Poole-Frenkel law.The value obtained for the thermal energy gap of amorphous boron (1.3 eV) is slightly smaller than that of crystal ß-rhombohedral boron (1.4 eV). The temperature dependence of the electrical conductivity can be satisfactorily described by the Mott law $\text{ln}\text{σ ≈ ?(T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$, where $\text{T}{}_0\text{? 10}{}^8\text{K}$. This gives an estimate, N ≈ 10¹⁸ cm^?3, for the concentration of trapping levels responsible for the hopping conduction. The value $\text{?}{}_0\text{? 9}$ is found from the spectral dependence of R while α has Urbach-like character $\text{? α ≈}\text{exp}\text{(}\text{h}\text{?}\text{ω/Δ)}$, where $\text{Δ ? 0.19}\text{eV}$.A comparison is made between amorphous boron and crystalline ß-rhombohedral boron. Because of the very complex crystal structure and the large dimensions of the unit cell of ß-boron, some of its physical properties could be qualitatively described on the basis of the so-called ‘amorphous concept’.