Graphical design of millimeter-wave finline bandpass filters

A very simple yet accurate design procedure for the finline bandpass filters at millimeter wavelengths is presented. The technique enables the geometry of finline bandpass filters to be obtained accurately from simple closed-form equations and curves. Using this graphical approach, various millimeter-wave finline bandpass filters have been designed. Results in V-band (50 to 75 GHz) and W-band (75 to 110 GHz) are presented and indicate a good agreement between the calculated and measured performances.     

A new multi frequency compact microstrip antenna

A single layer, single feed, multi frequency, compact rectangular microstrip antenna is proposed. Resonant frequency has been reduced drastically by cutting unequal rectangular slots at the edge of the patch along with two tiny circular slots created inside the patch to improve return loss. Antenna size has been reduced by 64% with an increased frequency ratio (the ratio of second or higher resonant frequency to the first resonant frequency).     

基于补偿型微带谐振单元的一维光子带隙结构

提出了一种具有光子带隙(PBG)性能的补偿型微带谐振单元(C-CMRC)，通过并联两个开路微带线来补偿CMRC结构在低频通带内因为阻抗不平衡而引起的回波损耗，从而减小插入损耗，并且该C-CMRC谐振结构具有更强的慢波效应和更大的禁带宽度.利用该结构谐振单元的慢波效应，设计具有一维PBG性能的低通滤波器，重复周期仅为0.15λ_g.与普通的0.5λ_g周期的PBG结构相比，大大减小了电路面积.实际设计、制作和测试了CMRC和C-CMRC两种结构，通过两种结构的测试结果 关键词： 补偿型微带谐振单元 慢波 禁带 光子带隙     

A finline PSK modulator for W-band

A 90° phase switch in finline technique has been developed for application in a W-band homodyne network analyzer. It is realized on a 0.127 mm fibre reinforced teflon substrate in a standard WR 10-waveguide. It employs two low capacitance beam-lead PIN diodes mounted in series to the finline. The waveguides are connected via Dolph-Chebyshev tapers.The analysis of this circuit shows that the diode junction capacitance imposes certain constraints for the wave impedances which must be realized. They can only be met with overlapping antipodal finlines. There are several analytical solutions with different lengths and wave impedances of the transmission line sections. The choice has been taken with respect to bandwidth in the limits imposed by the range of wave impedances which can be realized. Between 90 and 105 GHz, the phase error of the realized modulator is below ±2.5°, and the amplitude imbalance is less than 0.5 dB.     

A broadband Ka-band microstrip circulator for integrated millimeter wave systems

A Ka-band microstrip circulator, using ferrite with 4 M=5000 G, have been developed. By optimizing the circulator configuration, broadband n=2 Chebyshev response performance are obtained over 7 GHz bandwidth. The circulator have isolation of greater than 15 dB, and insertion loss of less than 1.0 dB.     

An experimental investigation of high permittivity dielectric resonators for millimeter-wave microstrip components

This paper proposes a new type of high permittivity whispering gallery mode cylindrical dielectric resonators with a geometry which is very suitable for use in microstrip type integrated circuits. These oversized resonators, together with high Q factors and ease of fabrication, are potentially interesting for millimeter wave integrated filters and oscillators. In this paper, we report an experimental investigation of such resonators carried out in Ka band (26.5–40 GHz). Measured results including resonant frequencies and loaded quality factors will be presented. Application to millimeter wave filters will also be demonstrated.     

A perturbation technique to model InGaAs/InP and GaAs FETs for millimeter-wave integrated circuits

A perturbation method is described to analytically model the electrical behavior of submicron FETs for millimeter-wave circuit applications. The approach includes the determination of the two-dimensional potential distribution in a non-rectangular depletion region. The result is used to derive analytical expressions for the threshold voltage and transconductance of FETs.     

一种光电混合集成有源光双稳器件

本文报道一种光电混合集成的有源双稳态器件,它仅由一只半导体激光器,两只PIN光电探测器及几只电子元器件构成.实验上得到了光学迟滞回线,显示了光开关、光存储、光脉冲整形等功能.文中简述了器件工作原理,光电混合集成制作工艺技术及性能指标.     

Broadband phase modulators in integrated fin-line technique for millimeter-wave applications

Three structures of broadband reflection type phase modulators in unilateral fin-line are presented.The circuits have been analysed assuming ideal transmission line equivalent circuits for the fin-line sections, while the switching element, a pin-diode, is represented by a typical equivalent circuit at Ka-band.The insertion loss in all three cases is better than 1.5 dB and the phase error for a 180 degrees phase shift is less than 4 degrees over a 12% bandwidth, while a 16% bandwidth is achieved for a 90 degrees modulator at a phase error of 2 degrees.     

A compact and high-power silicon-wafer solar strip-cells-array module integrated with an array concentrator

A compact, low-cost and high-output-power silicon-wafer solar strip-cells-array module(SCAM) was experimentally demonstrated. The proposed SCAM consisted mainly of a silicon-wafer strip-cell sparse array and low-concentrationratio array concentrator based on an epoxy resin polymer(ERP) cylindrical plano-convex lens. A polymer replication process based on a polydimethylsiloxane mold was used to fabricate the ERP lens array concentrator. The results show that 46.94% of the silicon-wafer cell was saved in the designed SCAM. Moreover, the output power of the SCAM with a low concentration ratio of 8 suns was improved by 8.6%, compared with a whole piece of a conventional silicon-wafer solar cell with the same area as the module. The proposed method encapsulating solar cells provides a means to reduce the usage of silicon cells in modules as well as improving the output power of modules.     

石墨烯-硅基混合光子集成电路

近年来硅基光子学已经慢慢走向成熟,它被认为是未来取代电子集成电路,实现下一代更高性能的光子集成电路的关键技术.这得益于硅基光子器件与现代的互补金属氧化物半导体工艺相兼容,能够实现廉价的大规模集成.然而,由于受硅材料本身的光电特性所限,在硅基平台上实现高性能的有源器件仍然存在着巨大挑战.石墨烯-硅基混合光子集成电路的发展为解决这一问题提供了可行的方案.这得益于石墨烯作为一种兼具高载流子迁移率、高电光系数和宽带吸收等优点的二维光电材料,能够方便地与现有硅基器件相集成,并充分发挥自身的光电性能优势.本文结合我们课题组在该领域研究的一些最新成果,介绍了国际上在石墨烯-硅基混合光子集成电路上的一些重要研究进展,涵盖了光源、光波导、光调制器和光探测器四个重要组成部分.     

On the design and performance of printed-circuit filters and diplexers for millimeter-wave integrated circuits

This paper describes the design and performance of various millimeter-wave printed-circuit filters and diplexers. These components include microstrip/suspended stripline and finline lowpass filters, capacitive-gap and inductive-iris-coupled bandpass filters, spurline bandstop filters, and finline diplexers. State-of-the-art performances from Ka-band (26.5 to 40 GHz) to D-band (110 to 170 GHz) have been obtained. Agreement between the measured and calculated results was also achieved.     

Attenuation and propagation in various finline structures

The theory and numerical results of the asymmetric single and coupled bilateral and unilateral finlines and arbitrary antipodal finline considering the attenuation of the substrate are presented. Results are given to the complex propagation constant. The full wave analysis of the Transverse Transmission Line — TTL method is used in the FTD. Applying the moment method the complex propagation constant, including the attenuation constant and the phase constant, are obtained. The effective dielectric constant, _eff,, and the characteristic impedance are also calculated. The results are compared with the references, and news results are presented for these parameters.     

Disposable and compact integrated plasmonic sensor using a long-period grating

This Letter theoretically proposes and investigates an integrated plasmonic sensor that is based on a grating-assisted coupling between a surface plasmon polariton (SPP) and a dielectric waveguide (DW) mode. It consists of a glass slide with a gold film for the propagation of an SPP and a separate DW with a long-period grating. For sensing, the two parts are temporarily combined. After sensing, the former is replaceable, and so the sensor has disposability. The design procedure and analysis method for the sensor are explained. The designed sensor is shown to be very compact. Its characteristics of sensing a change of the refractive index of liquid are analyzed and discussed.     

A millimeter-wave geometric phase interferometer

A millimeter-wave interferometer operating purely on the geometric phase is presented. Like its optical counterpart described by Hariharan and Roy, this system uses two circular polarizers with a half-wave section in between. The geometric phase of each signal is determined by the orientation of the half-wave section.     

A millimeter-wave monolithic grid amplifier

A 36-element monolithic grid amplifier has been fabricated. The peak gain is 5 dB at 40.8 GHz with a 3-dB bandwidth of 1.4 GHz. The active elements are pairs of heterojunction-bipolar-transistor's (HBT's). The individual transistors in the grid have a maximum oscillation frequency,f _max , of 100 GHz. The grid includes base stabilizing capacitors which result in a highly stable grid. This is the first report of a successful monolithic grid amplifier.     

基于CSMRC结构和容性肖特基二极管的220GHz三倍频器

设计了基于容性肖特基二极管的220 GHz非平衡三倍频器。首先对容性肖特基二极管进行测试和关键参数提取,建立了肖特基二极管的等效电路模型,以此为基础进行三倍频电路设计;在倍频电路设计中通过引入紧凑悬置微带谐振单元(CSMRC)滤波结构来减小信号传输损耗;由于三倍频电路设计中难以实现全波阻抗匹配,因此采用了整体电路结构谐波平衡调匹配方法设计倍频电路,最后对制备出的倍频器进行测试和分析;实验测试结果表明：倍频器在213.1~221.6 GHz范围内输出功率大于10 mW,倍频效率大于5%,最高输出功率为18.7 mW@218.6 GHz,最高倍频效率为8.24%@217.9 GHz。     

GaAs integrated quantum photonics: Towards compact and multi‐functional quantum photonic integrated circuits

The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different material platforms being investigated, direct‐bandgap semiconductors and particularly gallium arsenide (GaAs) offer the widest range of functionalities, including single‐ and entangled‐photon generation by radiative recombination, low‐loss routing, electro‐optic modulation and single‐photon detection. This paper reviews the recent progress in the development of the key building blocks for GaAs quantum photonics and the perspectives for their full integration in a fully‐functional and densely integrated quantum photonic circuit.