Infrared spectroscopy of self-assembled monolayer films on silicon

Infrared vibrational spectroscopy in an attenuated total reflection (ATR) geometry has been employed to investigate the presence of organic thin layers on Si-wafer surfaces. The phenomena have been simulated to show there can be a field enhancement with the presented single-reflection ATR (SR-ATR) approach which is substantially larger than for conventional ATR or specular reflection. In SR-ATR, a discontinuity of the field normal to the film contributes a field enhancement in the lower index thin film causing a two order of magnitude increase in sensitivity. SR-ATR was employed to characterize a single monolayer of undecylenic acid self-assembled on Si(1 1 1) and to investigate a two monolayer system obtained by adding a monolayer of bovine serum albumin protein.     

Electrochemically driven organic monolayer formation on silicon surfaces using alkylammonium and alkylphosphonium reagents

The functionalization of silicon surfaces with organic monolayers, bound through Si–C bonds, is an area of wide interest due to the technological promise of organosilicon hybrid devices, but also to investigate fundamental surface reactivity. In this paper, the use of alkylammonium and alkylphosphonium cations as sources of organic moieties to bind to hydrogen-terminated flat and porous silicon is demonstrated. Tetraalkylammonium, tetraalkyl/arylphosphonium reagents, and alkyl pyridinium salts can be utilized, but trialkylammonium salts cannot as they yield substantial surface oxidation. Under electrochemical conditions, either potentiostatic or galvanostatic modes, alkyl groups derived from the ammonium or phosphonium salts are grafted to the silicon surface and are bound through Si–C bonds. Covalent attachment of the organic monolayers to the surface was demonstrated by XPS, AFM scribing, and FTIR. The mechanism may proceed via reduction of the ammonium salt yielding alkyl radicals, R, which may be reduced to R⁻ and attack surface Si–Si bonds, leading to Si–C bonds, or the formation of silyl anions (≡Si⁻) under the cathodic conditions followed by nucleophilic attack on the trialkylammonium cation.     

Influence of the temperature on the photoluminescence of silicon clusters embedded in a silicon oxide matrix

Amorphous silicon oxide thin films were prepared by co-evaporation of Si and SiO in ultra-high vacuum. Different compositions were obtained by changing the evaporation rate of silicon. After thermal annealing treatments, the dissociation of the silicon oxide in pure silicon and silicon dioxide leads to the formation of silicon clusters embedded in a silicon oxide matrix. Thus the samples were annealed to different temperatures up to 950°C. Depending on the annealing temperature and on the composition, different cluster sizes were obtained. The photoluminescence (PL) energy depends on the cluster size and a large range of wavelengths is obtained from 500 to 750 nm. The PL, attributed to a confinement effect of the electron–hole pairs in the silicon particles, is studied as a function of the temperature. It is demonstrated that the continuous decrease of PL intensity with the temperature from 77 to 500 K depends on the structure of the samples. For samples with well-separated clusters, the PL decreases rapidly with the temperature. For samples containing clusters separated by a small distance, the PL weakly depends on the temperature. No shift of the energy is observed. The results are discussed by taking into account the competition between the radiative recombination in the silicon clusters and the non-radiative escape of the carriers via a hopping mechanism.     

Preparation and structure of silicon doped tin oxide composites using an advanced ultrasonic spray method

Ultra fine silicon-doped tin oxide composite powders have been synthesized using an advanced ultrasonic spray method. The SEM pictures revealed a particle size of about 100 nm. The structure and composition of the samples have been analyzed by XRD, FTIR, EDX and XPS. According to the XRD results, the as-prepared materials exhibit the rutile structure, with lattice parameters changing to some extent as the silicon dopant content increased. FTIR spectra showed SiO₂ peaks and intensities increased in proportion to the nominal and EDX composition. XPS data were analyzed in detail and confirmed the Sn–O–Si bond exists in the composite.     

Vibrational spectroscopy characterization of magnetron sputtered silicon oxide and silicon oxynitride films

Vibrational (infrared and Raman) spectroscopy has been used to characterize SiO_xN_y and SiO_x films prepared by magnetron sputtering on steel and silicon substrates. Interference bands in the infrared reflectivity measurements provided the film thickness and the dielectric function of the films. Vibrational modes bands were obtained both from infrared and Raman spectra providing useful information on the bonding structure and the microstructure (formation of nano-voids in some coatings) for these amorphous (or nanocrystalline) coatings. X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) analysis have also been carried out to determine the composition and texture of the films, and to correlate these data with the vibrational spectroscopy studies. The angular dependence of the reflectivity spectra provides the dispersion of vibrational and interference polaritons modes, what allows to separate these two types of bands especially in the frequency regions where overlaps/resonances occurred. Finally the attenuated total reflection Fourier transform infrared measurements have been also carried out demonstrating the feasibility and high sensitivity of the technique. Comparison of the spectra of the SiO_xN_y films prepared in various conditions demonstrates how films can be prepared from pure silicon oxide to silicon oxynitride with reduced oxygen content.     

Shape controlled flower-like silicon oxide nanowires and their pH response

Silicon oxide nanowires were synthesized with high-temperature evaporation using silicon monoxide as starting materials and tin and gallium as catalysts. The products take the shape of flowers with petals composed of silicon oxide nanowires. The pH response of the products reveals excellent linear relation due to their vast surface area.     

Trench formation and lateral damage induced by gallium milling of silicon

Molecular dynamics simulations are performed to model the nanomachining of materials via focused ion beams (FIBs). The goal of this research is to investigate the fundamental dynamics which govern the interaction of FIB with materials which are vital to the semiconductor industry, namely silicon. Specifically, we focus on the formation of trenches/holes within the sample and the dynamics responsible for their characteristic v-shape, as well as the extent of lateral damage due to a gallium beam. These phenomena have been successfully modelled, with evidence that the lateral and subsurface damage created is much larger than the beam itself. The results presented here begin to elucidate the dynamics governing the spatial resolution of these experiments, and provide an idea of some of the technical issues associated with these beams.     

Comparative study between silicon-rich oxide films obtained by LPCVD and PECVD

A comparative study of compositional and optical properties of silicon-rich oxide (SRO) films deposited by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD) is presented. Infrared spectra revealed the presence of hydrogen bonded to silicon atoms in the SRO–PECVD films, whereas in SRO–LPCVD films the IR spectra looked like the stoichiometric thermal silicon oxide. Moreover, X-ray photoelectron spectroscopy (XPS) studies showed that the SRO–PECVD films contain a higher content of nitrogen than SRO–LPCVD films. In spite of differences, the SRO films obtained by both methods show a strong room-temperature photoluminescence (PL). However, the highest PL intensity was emitted by SRO films obtained by LPCVD.     

Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates

Amorphous silicon oxide (SiO_x) nanowires were directly grown by thermal processing of Si substrates. Au and Pd–Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiO_x nanowires was achieved by a simple heating process (1000–1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiO_x nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid–liquid–solid model of nanowire formation was shown to be valid.     

Addition reaction and characterization of chlorotris(triphenylphosphine)iridium(I) on silicon(1 1 1) surfaces

Studies were performed to determine the chemical addition of a metal complex molecule, chlorotris(triphenylphosphine)iridium(I), on hydrogen passivated Si(1 1 1) surfaces to form a self-assembled monolayer (SAM). The iridium complex was synthesized prior to chemical addition, for which modified reaction conditions were chosen. Following addition, the silicon surfaces were characterized with X-ray photoelectron spectroscopy (XPS) and cyclic voltammetry (CV). The XPS results revealed that the surfaces consisted of the expected elemental percentages and that the iridium has a slightly higher success rate at attaching to oxide-free surfaces. XPS data also strongly indicate that the iridium complex remained intact upon chemisorption and did not decompose during the addition reaction. CV data show a difference between iridium treated surfaces and control samples. Hydrogen passivated wafers with iridium complex were much more conductive than those which were terminated with just an oxide or with an oxide and iridium complex. Furthermore, no free iridium reagent was detected as an additional feature in the current profile, indicating there was no physisorbed layer.     

A review on techniques to fabricate silicon oxide arrays for biomolecules patterning

The development of methods for pattern proteins and other functional molecules on the surfaces with nanoscale accuracy is indispensable to take advantage of their properties in ultrasensitive and/or high-density devices. Several methods are used to fabricate organized micro/nanohierarchical structures on a surface and give the ability of molecules to self-assemble by using the mutual recognition properties. However, the supramolecular organization is difficult to extend from nano- to mesoscopic length scales or does not allow accurate placement of the desired structures on a specific region of an inhomogeneous surface. This paper reviews the different techniques used to fabricate nano/millimeter range patterns on SiO₂/Si substrates and local chemical grafting to perform successful attachment of biomolecules on predetermined areas.     

Hybrid-DFT study for the initial oxidation steps on silicon cluster surface

We performed a hybrid density functional theory calculation for the successive adsorption of nitrous oxide (N₂O) on Si(1 0 0)-Si₉H₁₂O_x (x = 0 and 1) cluster surfaces to elucidate N₂O decomposition and the subsequent surface oxidation processes. N₂O decomposed into N₂ and O fragments, and the latter fragment inserted into either surface-dimer bonds or back-bonds with similar activation barriers on both the clean and partially oxidized Si surfaces. The Si₉H₁₂ cluster surface was eventually oxidized to five distinct structures of Si₉H₁₂O₂.     

Effect of rapid thermal oxidation on structure and photoelectronic properties of silicon oxide in monocrystalline silicon solar cells

This paper concerns the topic of surface passivation properties of rapid thermal oxidation on p-type monocrystalline silicon wafer for use in screen-printed silicon solar cells. It shows that inline thermal oxidation is a very promising alternative to the use of conventional batch type quartz tube furnaces for the surface passivation of industrial phosphorus-diffused emitters. Five minutes was the most favorable holding time for the rapid thermal oxidation growth of the solar cell sample, in which the average carrier lifetime was increased 19.4 μs. The Fourier transform infrared spectrum of the rapid thermal oxidation sample, whose structure was Al/Al-BSF/p-type Si/n-type SiP/SiO₂/SiN_x/Ag solar cell with an active area of 15.6 cm², contained an absorption peak at 1085 cm⁻¹, which was associated with the Si–O bonds in silicon oxide. The lowest average reflectance of this sample is 0.87%. Furthermore, for this sample, its average of internal quantum efficiency and conversion efficiency are respectively increased by 8% and 0.23%, compared with the sample without rapid thermal oxidation processing.     

Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers

The impact of hydrogen desorption on the electrical properties of TiO_x on crystalline silicon (c-Si) with SiO_y interlayers is studied for the development of high-performance TiO_x carrier-selective contacts. Compared with the TiO_x/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm² are obtained by using SiO_y interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiO_x interlayers is lower than that of heterocontacts without a SiO_y interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiO_x/c-Si and TiO_x/SC2-SiO_y/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiO_x/SC2-SiO_y/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.     

Efficiency characteristics of a silicon oxide passivation layer on p-type crystalline silicon solar cell at low illumination

Silicon dioxide (SiO₂) is widely used to improve the surface passivation properties of silicon solar cells. To minimize solar cell potential-induced degradation when the PV module is installed outdoors, a silicon oxide film is widely used as an insulator. However, experiments have confirmed that solar cells with a silicon oxide (SiO₂) film have a lower efficiency than solar cells without a silicon oxide (SiO₂) film at low illumination (<0.4 sun). Actually, the efficiency in the low illumination condition affects the average power output per day because the PV module mostly operates when the solar irradiation dose is less than 1 sun. To maximize the performance of the PV module, the output at a low light intensity level should also be considered. Shunt resistance (R_shunt) is known to cause a decrease in solar cell efficiency under low illumination conditions. PC1D simulation was used to analyze parameters, such as the series resistance, parallel resistance, and surface recombination, that affect the characteristics of the solar cell at low light intensity. In this study, we confirmed how the SiO₂ layer affected the low illumination properties of solar cells, even though these cells were more efficient at 1 sun. Silicon solar cells with a SiN_x/SiO₂ bilayer or a SiN_x single film were fabricated, and their characteristics were evaluated. Passivation characteristics were measured using the quasi-steady-state photoconductance (QSSPC) technique to evaluate the minority carrier lifetime and the implied open-circuit voltage (V_OC), and capacitance-voltage measurements were used to analyze the fixed charges. The values of the shunt resistance and series resistance in solar cells with different passivation layers were compared, and the cause of the decrease in the efficiency under low illumination was also analyzed via fill factor calculation.     

Characterization and protonation behavior of bipyridine thiol self-assembled monolayer on Au(1 1 1) studied using X-ray photoelectron spectroscopy and scanning tunneling microscopy

The adsorption process, molecular arrangement and protonation behavior of self-assembled monolayers (SAMs) of bipyridine thiol on Au(1 1 1) were investigated using X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM), with a view towards constructing a molecular ion sensor. When the bipyridine SAMs were immersed in a strong CF₃SO₃H solution for protonation of the bipyridine group, additional N(1s) XPS peaks were generated at higher binding peak positions where the origin of the peak was considered to be the N-H species. We further investigated the relationship between the immersion time for the SAMs and the probability of protonation. We observed a decrease in the probability of protonation with a longer immersion time for the SAMs. We consider that both the bipyridine molecular arrangements and the molecular density on the Au surface are crucial for controlling the probability of protonation based on the STM and XPS data.     

Inter-diffusion of cobalt and silicon through an ultra thin aluminum oxide layer

Optical emission spectroscopy of sputtered species during ion bombardment, Auger electron spectroscopy and high-resolution transmission electron microscopy were used to study the cobalt and silicon diffusion through the interfaces of Co/AlO/Si(0 0 1) hetero-structure. The results are discussed as a function of the annealing temperature of sample and show that the diffusion process at the interfaces starts for annealing temperatures above 200 °C without detectable modification of the oxide layer.     

Anchoring of alkyl chain molecules on oxide surface using silicon alkoxide

Chemical states of the interfaces between octadecyl-triethoxy-silane (ODTS) molecules and sapphire surface were measured by X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure (NEXAFS) using synchrotron soft X-rays. The nearly self-assembled monolayer of ODTS was formed on the sapphire surface. For XPS and NEXAFS measurements, it was elucidated that the chemical bond between silicon alkoxide in ODTS and the surface was formed, and the alkane chain of ODTS locates upper side on the surface. As a result, it was elucidated that the silicon alkoxide is a good anchor for the immobilization of organic molecules on oxides.     

Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide

Using a high throughput, in‐line atmosphere chemical vapor deposition (APCVD) tool, we have synthesized amorphous aluminum oxide (AlO_x) films from precursors of trimethyl‐aluminum (TMA) and O₂, yielding a maximum deposition 150 nm min^–1 per wafer. For p‐type crystalline silicon (c‐Si) wafers, excellent surface passivation was achieved with the APCVD AlO_x films, with a best maximum effective surface recombination velocity (S_eff,max) of 8 cm/s following a standard industrial firing step. The findings could be attributed to the existence of large negative charge (Q_f ≈ –3 × 10¹² cm^–2) and low interface defect density (D_it ≈ 4 × 10¹¹ eV^–1 cm^–2) achieved by the films. This data demonstrates a high potential for APCVD AlO_x to be used in high efficiency, low cost industrial solar cells. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation of oxygen states and reactivities on a nanostructured cupric oxide surface

Nanostructured copper (II) oxide was formed on clean copper foil at room temperature using activated oxygen produced by RF discharge. CuO particles of approximately 10-20 nm were observed on the surface by Scanning Tunneling Microscopy (STM). The copper states and oxygen species of the model cupric oxide were studied by means of X-ray Photoelectron Spectroscopy (XPS). These oxide particles demonstrated abnormally high reactivity with carbon monoxide (CO) at temperatures below 100 °C. The XPS data showed that the interaction of CO with the nanostructured cupric oxide resulted in reduction of the CuO particles to Cu₂O species. The reactivity of the nanostructured cupric oxide to CO was studied at 80 °C using XPS in step-by-step mode. The initial reactivity was estimated to be 5 × 10⁻⁵ and was steadily reduced down to 5 × 10⁻⁹ as the exposure was increased. O1s spectral analysis allowed us to propose that the high initial reactivity was caused by the presence of non-lattice oxygen states on the surface of the nanostructured CuO. We established that reoxidation of the partially reduced nanostructured cupric oxide by molecular oxygen O₂ restored the highly reactive oxygen form on the surface. These results allowed us to propose that the nanostructured cupric oxide could be used for low temperature catalytic CO oxidation. Some hypotheses concerning the nature of the non-lattice oxygen species with high reactivity are also discussed.