Topology-induced spin frustrations at the Cr(001) surface studied by spin-polarized scanning tunneling spectroscopy

The magnetic structure of the Cr(001) surface was investigated by spin-polarized scanning tunneling spectroscopy by making use of the spin-polarized surface state located close to the Fermi level. Periodic alternations of the intensity of the surface state peak in local tunneling spectra measured above different ferromagnetic terraces separated by monatomic steps confirm the topological antiferromagnetic order of the Cr(001) surface. Screw dislocations cause topology-induced spin frustration, leading to the formation of domain walls with a width of about 120 nm.     

Growth of Cr on Ir(1 1 1) studied by scanning tunneling microscopy

We have studied the room-temperature growth of Cr on Ir(1 1 1) by scanning tunneling microscopy. Even in the low-coverage regime, up to a total coverage of 2 monolayers (ML), Cr does not grow in the layer-by-layer mode. Instead, we observe islands with local coverages Θ between 1 ML and 5 ML. While the 1st layer growth is pseudomorphic, sporadic defect lines are observed in the 2nd layer. For Θ ? 3 ML periodic one-dimensional dislocation lines appear indicating the onset of strain relief. Scanning tunneling spectroscopy reveals that islands with Θ = 1 ML exist in two modifications. Though their tunneling spectra are qualitatively rather similar, direct comparison shows that the main peak is shifted by about 15 mV, resulting in peak positions of −0.255 V and −0.270 V. We interpret these two modifications as regular fcc Cr and Cr which exhibits a faulted hcp stacking on Ir(1 1 1), respectively. The assignment of fcc to areas directly attached to substrate steps together with the evolution of the ratio of the different ML-areas with coverage leads to the conclusion that hcp is the more favorable stacking.     

Low temperature InSb(0 0 1) surface structure studied by scanning tunneling microscopy

InSb(0 0 1) surface prepared by ion sputtering and thermal annealing has been studied in the temperature range from 77 K up to 300 K using scanning tunneling microscopy (STM). At 300 K the surface is c(8 × 2) reconstructed as indicated by low energy electron diffraction and STM images, and its structure appears to be consistent with the “ζ-model” recently proposed for this surface. Upon lowering of the temperature below 180 K a new phase appears on the surface. This phase is characterized by the surface structure period doubling along [1 1 0], lowering the surface symmetry from c2mm to p2, and appearance of structural domains. Possible origins of the new phase are discussed.     

Observation of spin-polarized surface states on ultrathin bct Mn(001) films by spin-polarized scanning tunneling spectroscopy

We report the observation of a magnetic contrast of up to 20% in the scanning tunneling spectroscopy dI/dV maps obtained with Fe-coated tips on Mn(001) layers grown on an Fe(001) whisker at 370 K. These nanometer resolution microscopy results show that the layers couple antiferromagnetically. By normalizing the dI/dV curves by tunneling probability functions, we found a spin-dependent peak on the body-centered-tetragonal (bct) Mn(001) surface at +0.8 V, whose high spin polarization gives rise to the dI/dV map contrast. Band structure calculations allow one to identify the +0.8 V peak as due to two spin-polarized d(z(2)) surface states.     

Surface properties of Hafnium diboride(0 0 0 1) as determined by X-ray photoelectron spectroscopy and scanning tunneling microscopy

The surface structure and properties of the HfB₂(0 0 0 1) (Hafnium diboride, HfB₂) surface have been investigated with X-ray photoelectron spectroscopy, low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). Annealing temperatures above 1900°C produce a sharp (1×1) LEED pattern, which corresponds to STM images showing flat (0 0 0 1) terraces with a very low contamination level separated by steps 3.4 Å in height, corresponding to the separation of adjacent Hf planes in the HfB₂ bulk structure. For lower annealing temperatures, extra p(2×2) spots were observed with LEED, which correspond to intermediate terraces of a p(2×1) missing row structure as observed with STM.     

Vanadium nanoclusters on Si(1 1 1) 7 × 7 surface studied by scanning tunneling microscopy

The size distribution and shape transition of self-assembled vanadium silicide clusters on Si(1 1 1) 7 × 7 have been investigated by scanning tunneling microscopy. Nanoclusters were formed by submonolayer vanadium deposition at room temperature followed by subsequent annealing (solid phase epitaxy - SPE). At room temperature, initially V-nanoclusters are formed which occupy sites avoiding the corner hole parts of the unit cells in the Si(1 1 1) 7 × 7 surface. Upon annealing, strong metal-silicon reaction occur leading to the formation of vanadium silicide nanoclusters. As a function of temperature, both, flat (2D) and three dimensional (3D) clusters have been obtained. After annealing at temperatures around 900 K many faceted clusters are created, whereas at higher annealing temperature, around 1300 K, predominantly 3D clusters are formed. The size distribution of SPE grown clusters could be well controlled in the range of 3-10 nm. The cluster size depends on the annealing temperature as well as on the initial vanadium coverage. Based on high resolution STM images a structure model for one kind of vanadium disilicide clusters exposing atomically flat surfaces was proposed.     

Atomic geometry and electronic properties of the Ge(1 1 1)2 × 1-Sb surface studied by scanning tunneling microscopy/spectroscopy and core-level photoemission

By scanning tunneling microscopy and spectroscopy (STM/S) and high-resolution core-level photoemission using synchrotron radiation, we have investigated the atomic structure and electronic properties of Sb-induced 2 × 1 reconstruction on Ge(1 1 1). Our results support well the zigzag-chain model proposed for this phase in the literature; in particular, the STM images visualize the Sb zigzag (Seiwatz) chain in a real space, and the STS I-V spectrum suggests this surface to be semiconducting, in good agreement with the atomic configuration proposed. However, a closer inspection of the STM results does not support the buckling of Sb chains reported in earlier studies. Moreover, the analysis of the Sb 4d core-level line shape of the (2 × 1) reconstruction shows that the bonding state of the Sb atoms is very similar, suggesting an unbuckled Seiwatz chain. In addition, the Ge 3d core-level emission reveals only one component, giving evidence for the ideal bulk-terminated structure of the Ge substrate.     

Structure, defects, and impurities at the rutile TiO2(0 1 1)-(2 × 1) surface: A scanning tunneling microscopy study

The titanium dioxide rutile (0 1 1) (equivalent to (1 0 1)) surface reconstructs to a stable (2 × 1) structure upon sputtering and annealing in ultrahigh vacuum. A previously proposed model (T.J. Beck, A. Klust, M. Batzill, U. Diebold, C. Di Valentin, A. Selloni, Phys. Rev. Lett. 93 (2004) 036104/1) containing onefold coordinated oxygen atoms (titanyl groups, TiO) is supported by Scanning Tunneling Microscopy (STM) measurements. These TiO sites are imaged bright in empty-states STM. A few percent of these terminal oxygen atoms are missing at vacuum-annealed surfaces of bulk-reduced samples. These O vacancies are imaged as dark spots. Their number density depends on the reduction state of the bulk. Double vacancies are the most commonly observed defect configuration; single vacancies and vacancies involving several O atoms are present as well. Formation of oxygen vacancies can be suppressed by annealing a sputtered surface first in vacuum and then in oxygen; annealing a sputtered surface in oxygen results in surface restructuring and a (3 × 1) phase. Anti-phase domain boundaries in the (2 × 1) structure are active adsorption sites. Segregation of calcium impurities from the bulk results in an ordered overlayer that exhibits domains with a centered (2 × 1) periodicity in STM.     

Oxygen induced surface structure of Mo(1 1 0) studied by scanning tunneling microscopy

The oxygen induced surface structures formed on Mo(1 1 0) by oxygen exposure at 1300 K in UHV has been studied by scanning tunneling microscopy (STM). Two kinds of oxygen-adsorbed surface structures are observed. One consists of one-dimensional rows running along or directions at substrate molybdenum lattices, and another shows more complex structure including discrete arrangement of large protrusions and zig-zag alignments of small protrusions. This complex structure is probably a further oxygen-adsorbed structure than the well-known p(2 × 2) structure of 0.3 ML coverage. On the basis of STM image, an atomic model is proposed, where adsorbed oxygen atoms occupy both long-bridge and the quasi-threefold sites of molybdenum lattice (0.4 ML coverage). This structure is presumed to be a transient state during site-conversion with increase of oxygen exposure.     

Hydrogen-induced missing-row reconstructions of Pd(110) studied by scanning tunneling microscopy

The effect of hydrogen adsorption on the Pd(110) surface structure at room temperature has been studied by scanning tunneling microscopy. Depending on the partial pressure of hydrogen two different reconstructions of Pd(110) have been observed: a (1 × 3) phase at hydrogen pressures in the 10⁻⁹ mbar range and an additional (1 × 2) phase at p_H2 ≥ 5 × 10⁻⁸ mbar. Both reconstructions are found to be of the missing-row type. The evolution of the surface reconstructions has been followed in situ.     

Electronic and structural properties of the InP(1 0 0)(2 × 4) surface studied by core-level photoemission and scanning tunneling microscopy

The (2 × 4)-reconstructed InP(1 0 0) surfaces have been investigated by scanning tunneling microscopy (STM) and synchrotron-radiation core-level photoelectron spectroscopy. STM observations show that the α2 model describes the atomic structure of the InP(1 0 0)(2 × 4) surface in a limited range of the surface-preparation conditions, as predicted theoretically but not previously observed. STM results also support the accuracy of the previously found mixed-dimer structure for the InP(1 0 0)(2 × 4) surface under less P-rich conditions. A study of P 2p core-level photoelectron spectra, measured with different surface-sensitivity conditions, demonstrates that P 2p photoemission from the mixed-dimer InP(1 0 0)(2 × 4) surface consists of at least two surface-core-level-shift (SCLS) components which have kinetic energies approximately 0.4 eV higher and 0.3 eV lower than the bulk emission. On the basis of the surface-sensitivity difference between these SCLSs, they are related to the third-layer and top-layer P sites in the mixed-dimer structure, respectively.     

Determining the spin polarization of surfaces by spin-polarized scanning tunneling spectroscopy

During the last few years, spin-polarized scanning tunneling microscopy and spectroscopy has been developed as a reliable tool to image surface magnetic domain structures of bulk materials as well as thin films and nanostructured systems. In principle, this technique also allows for the determination of the energy-resolved spin polarization of the sample P_S(E) with nanometer resolution, information which might play a crucial role in understanding systems like, for example, non-magnetic adatoms on magnetic surfaces. A main problem in quantifying P_S(E), however, arises from the fact that, in contrast to planar junctions, the tip–sample distance generally varies with the magnitude and direction of the surface magnetization, since the distance is controlled indirectly by the tunneling current that is itself spin-polarized. We employ a simple model of the tunneling process to investigate this issue and show that a normalization of the dI/dU spectra with the total conductance I/U is insufficient to correct for their distance dependence. Received: 2 September 2002 / Accepted: 2 September 2002 / Published online: 5 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-40/42838-5311, E-mail: kubetzka@physnet.uni-hamburg.de     

Reversible local-modification of surface structure on clean Ge(0 0 1) by scanning tunneling microscopy below 80 K

The structure of the clean Ge(0 0 1) surface is locally and reversibly changed between c(4×2) and p(2×2) by controlling the bias voltage of a scanning tunneling microscopy (STM) below 80 K. It shows hysteresis for the direction of the sample bias voltage change. The c(4×2) structure is observed with the sample bias voltage V_b?−0.7 V. This structure is maintained at V_b?0.7 V with increasing the bias voltage from −0.7 V. When V_b is higher than 0.8 V, the structure changes to p(2×2). This structure is then maintained at V_b?−0.6 V with decreasing the bias voltage from +0.8 V. The area of the structure change can be confined in the single dimer row just under the STM tip using a bias voltage pulse. In particular, the minimum transformed length is four dimers along the dimer row in the transformation from p(2×2) to c(4×2). The observed local change of the reconstruction with hysteresis is attributed to the energy transfer process from the tunneling electron to the Ge lattice in the local electric field due to the STM bias voltage. A phenomenological model is proposed for the structure changes. It is based on a cascade inversion of the dimer buckling orientation along the dimer row.     

Structural study of Co/Pd(1 1 1) and CO/Co/Pd(1 1 1) by surface X-ray absorption fine structure spectroscopy

The structure of the Co thin films on Pd(1 1 1) and the effect of the CO adsorption on Co thin films were studied by Co K-edge surface X-ray absorption fine structure (XAFS). The polarization dependences of the X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectra indicate that Co thin films grow in the fcc stacking mode on Pd(1 1 1) up to 12 ML. The analysis of the nearest neighbor shell shows little mechanical strain at the interface, indicating that Co atom does not grow pseudomorphically on Pd(1 1 1). There is no alloy-like structure at the interface. CO adsorption causes no structural change of the Co thin films but modifies the Co surface electronic state. These structural studies provide deep insight in the magnetic property of the Co thin films on Pd(1 1 1).     

Room temperature observation of nitric oxide on Ir(1 1 1) by scanning tunneling microscopy

Room temperature (RT) adsorption of nitric oxide (NO) on Ir(1 1 1) was studied by scanning tunneling microscopy (STM). At low exposures, NO molecules can not be imaged by STM, because at RT the diffusion of NO is much faster than the STM scanning speed. At high exposures near the saturation coverage, however, a well-ordered 2 × 2 structure is observed. The coverage of the major 2 × 2 species is 0.25 and they can be assigned to the NO molecules adsorbed on the Ir ontop sites. A small number of less bright spots are assigned to nitrogen atoms produced by dissociation. Their number increases by annealing the NO-saturated surface at 380 K. A small number of another dissociation product, oxygen, are observed as black lines, indicating that the diffusion of oxygen atoms is fast. Scratch-like noise features were also detected by the STM, which suggests that a mobile precursor state exists, which was clearly shown by the effects of electron irradiation from the STM tip. These results are consistent with the previous molecular beam studies. Hopping of the 2 × 2 ordered NO species was frequently observed at the anti-phase domain boundaries and edges of the 2 × 2 islands.     

Plasma nitridation of Ge(100) surface studied by scanning tunneling microscopy

The geometric and electronic structures of the surface species on Ge(100) after plasma nitridation were investigated in this study. An electron cyclotron resonance (ECR) plasma source was used to directly nitride Ge(100), and scanning tunneling microscopy and spectroscopy (STM/STS) were employed to study the structures of the nitrided surface. Nitridation at room temperature generated a large diversity of adsorbate sites on the surface containing N, O, and displaced Ge atoms, differentiated by annealing between 200 °C and 450 °C. Conversely, nitridation at 500 °C produced Ge–N adsorbate sites which formed ordered and disordered structures on the surface free from oxygen. Density functional theory (DFT) simulations were performed focusing on the ordered nitride structure, and the simulated surface structure showed a good correspondence with the STM data. DFT calculations also found an increase of density of states near the Fermi level on the ordered nitride structure, which is consistent with the Fermi level pinning observed in the STS results. The DFT results predict H-passivation can unpin the Fermi level of the nitrided surface by reducing the dangling bonds and the bond strain, but the residual plasma damage and the low nitridation rate in UHV are challenges to obtain complementary experimental results.     

Magnetic ordering of Vn/Mo(0 0 1) systems: Ab-initio calculations

A density-functional theory (DFT) study is performed using a full-potential linearized-augmented-plane-waves (FP-LAPW) method to investigate the magnetic structure of vanadium-molybdenum systems (V_n/Mo(0 0 1), n = 1, 2). The topmost V layers relax inward in both systems with a larger contraction in V₂/Mo(0 0 1) system. A p(1 × 1) in-plane ferromagnetic ordering with appreciable magnetic moments is obtained on V overlayers, which is found to be the ground state in both systems. The layers below the surface exhibit induced magnetism with antiferromagnetic interlayer coupling.     

High resolution scanning tunneling spectroscopy of ultrathin Pb on Si(1 1 1)-(6 × 6) substrate

The electronic structure of Si(1 1 1)-(6 × 6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb_(1 1 1) and with the diameter of only about 2 nm we detected the quantized electronic state with energy 0.55 eV below the Fermi level. Similarly, the I(V) characteristics made for the Si(1 1 1)-(6 × 6)Au surface reveal a localized energy state 0.3 eV below the Fermi level. These energies result from fitting of the theoretical curves to the experimental data. The calculations are based on tight binding Hubbard model. The theoretical calculations clearly show prominent modification of the I(V) curve due to variation of electronic and topographic properties of the STM tip apex.