Features of the fine structure of the fundamental absorption edge in low-doped semiconductor quantum wells with allowance for the Coulomb gap

Influence of the Coulomb gap on the fine structure of the fundamental absorption edge in quantum wells is studied. Using the interpolation formula, which adequately describes the effect of the Coulomb gap in quantum wells under conditions of low doping regardless of the compensation degree, an explicit expression is obtained for the absorption coefficient related to transitions from the valence level of size quantization to the impurity band. The dependence of the absorption coefficient of a quantum well on the levels of doping and compensation is also studied.     

Frequency integration for radiative transfer problems involving homogeneous non-gray gases: The inverse transmission function

It is shown that narrow-band frequency integration for radiative-transfer problems, involving homogeneous non-gray gases, can be accomplished by an integration with respect to the absorption coefficient. The kernel of the absorption-coefficient integral is a property of the gas and can be obtained directly from the absorption coefficient for a simple dependence of the absorption coefficient on frequency. It is shown that the kernel (called the ‘inverse transmission function’) can also be obtained as the inverse Laplace transform of the transmission function, without explicit knowledge of the absorption coefficient. The kernel has been obtained using the inverse transmission-function method for two statistical band models: the Goody model and the Malkmus model. The kernel for the Malkmus model offers a simple, accurate, straightforward method for narrow-band frequency integration.     

Optical absorption caused by the transitions between donor-acceptor pairs in a parabolic quantum well

The interimpurity optical absorption in a parabolic quantum well is studied theoretically. Under the assumption of a lightly doped semiconductor, the probabilities of acceptor-to-donor transitions are determined and the corresponding coefficient of light absorption is calculated. Within the framework of the nearest neighbor model, the broadening of impurity levels connected with the spatial distribution of donor-acceptor pairs is taken into account. The dependence of the absorption coefficient on the impurity concentration is determined and the blueshift in the absorption spectrum is studied.     

Free-carrier absorption in a parabolic quantum well with consideration of scattering on ionized impurities

Intra-subband transitions caused by light absorption in a parabolic quantum well is considered taking into account the scattering by ionized impurity centers. To calculate the scattering matrix element, the Born approximation is used and the interaction with the impurity is described by the Coulomb potential. An analytical expression for the absorption coefficient of processes with the initial absorption of photon and further scattering by an ionized impurity center is obtained. For absorption coefficient the frequency characteristics and dependence on the width of quantum well are examined.     

Impurity optical absorption in parabolic quantum well

Optical absorption in GaAs parabolic quantum well in the presence of hydrogenic impurity is considered. The absorption coefficient associated with the transitions between the upper valence subband and donor ground state is calculated. The impurity ground state wave function and energy are obtained using the variational method. Dependence of the absorption spectra on impurity position in quantum well was investigated. It is shown, that along with quantum well width decrease the absorption threshold shifts to higher frequencies. Results obtained within frames of parabolic approximation are compared with results for rectangular infinite-barrier quantum well case. The acceptor state → conduction band transitions considered as well.     

应变纤锌矿ZnO/Mg_xZn_(1-x)O柱形量子点中离子受主束缚激子的光学性质

在有效质量近似下,考虑内建电场效应,采用变分法详细研究了受限于纤锌矿Mg_xZn_(1-x)O/ZnO/Mg_xZn_(1-x)O圆柱形应变量子点中离子受主束缚激子(A~-,X)的带间光跃迁吸收系数随量子点尺寸、Mg含量和离子受主杂质中心位置的变化情况,并和离子施主束缚激子(D~+,X)及自由激子进行了比较.结果表明:随着量子点尺寸的减小,(A~-,X)的光跃迁吸收强度增强,吸收曲线向高能方向移动,出现蓝移现象.随着Mg含量增加,(A~-,X)的光跃迁吸收曲线蓝移,且吸收强度减弱.随着离子受主杂质从量子点的左界面沿材料生长方向移至量子点的右界面,光跃迁吸收曲线向低能方向移动,出现红移现象.此外,与离子施主束缚激子(D~+,X)相比,随着沿材料生长方向掺入杂质位置的变化,光跃迁吸收曲线移动的方向相反.但不管是掺入离子受主杂质还是离子施主杂质,当离子杂质从量子点的左异质界面沿材料生长方向移至右异质界面时,光跃迁吸收峰的移动量大致相同.     

Impurity absorption in gallium phosphide doped with zinc and oxygen

The extrinsic optical properties were investigated in homogeneous GaP crystals at room temperature. The transmission of extrinsic light is influenced by a simultaneous illumination of an additional light of different frequency. This light changes the occupancy of an impurity level. A simple theory is given, which relates this change in transmission of the extrinsic light to the optical cross sections of the impurity level. We had to use steady light because of the large relaxation time, but still obtained a resolution of 2 × 10⁻⁵ in the relative transmission change. The spectral dependence of the optical cross sections for an impurity level 0·9 eV below the conduction band were calculated. Another level approximately 1·85 eV from a band edge was also seen in these measurements, but it had complex optical properties. Both levels were seen in a direct measurement of the absorption coefficient.     

Fluctuations in the absorption coefficient of a single molecule at different signal acquisition times

The relation between the absorption coefficient of a single molecule calculated within the framework of a dynamical theory and the fluctuations in the absorption coefficient measured in experiments on scanning the laser frequency is analyzed in relation to the acquisition time of fluorescence photons. The analysis is performed for the case where the optical band of an impurity center consists of two well-resolved lines. A method of processing the fluctuating fluorescence is proposed that makes it possible to obtain the averaged absorption coefficients, which can be compared with the coefficients calculated theoretically.     

Monitoring the reaction between AlCl_3 and o-xylene by using terahertz spectroscopy

Terahertz time-domain spectroscopy(THz-TDS)is used to study the interaction between AlCl3and o-xylene in a temperature range from 300 K to 368 K.For comparison,the three isomers of o-,m-,and p-xylene are measured by using THz-TDS.The o-xylene carries out isomerization reaction in the presence of catalyst AlCl3.The absorption coefficient of the mixed reaction solution is extracted and analyzed in the frequency range from 0.2 THz to 1.4 THz.The temperature dependence of the absorption coefficient,which is influenced by both the dissolution of AlCl3and the production of the two other isomer resultants,is obtained,and it can indicate the process of the isomerization reaction.The results suggest that THz spectroscopy can be used to monitor the isomerization reaction and other reactions in chemical synthesis,petrochemical and biomedical fields.     

Sn-C60薄膜的紫外吸收光谱和X-射线衍射谱分析

对Sn-C60薄膜进行紫外可见光吸收，X-射线衍射和扫描电镜的测定结果显示，薄膜样品紫外可见光吸收的两个短波段吸收峰比纯C60薄膜的吸收峰显著下降，说明Sn-C60薄膜的电子光吸收跃迁为间接跃迁，能带中有杂质能级的存在；样品的X射线衍射峰则对应于面心立方结构；扫描电镜结果显示薄膜为纳米级颗粒组成。     

硅的间接跃迁双光子吸收系数谱

利用皮秒Nd:YAG脉冲激光器作为激发光源,测量出光子能量介于1.36 μm (0.912 eV)—1.80 μm (0.689 eV)之间的硅间接跃迁双光子吸收系数谱.尽管此波段范围内的激光光子能量小于硅间接带隙,但当激光辐照在硅基光电二极管受光面时,在二极管两电极端仍然探测到了显著的脉冲光伏信号.光伏信号峰值强度与入射光强呈二次幂函数关系,表明其是双光子吸收过程.采用pn结等效结电容充放电模型,将光伏响应信号峰值与入射光强相关联,从中提取出硅的间接跃迁双光子吸收系数,改变入射波长得到系数谱.研究表明:     

Saturation of absorption by lead sulfide nanoparticles in the main absorption band region

The spectral dependence of the degree of bleaching of glasses with PbS nanoparticles (average radius from 3 to 4 nm) has been studied in the main absorption band region. It has been established that the level of residual absorption in the bleached state decreases from 0.70 to 0.02 as we go from the high-frequency edge of the main absorption band for the lead sulfide nanoparticles toward the low-frequency edge, and reflects the spectral features of absorption by charge carriers in excited states. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 2, pp. 195–199, March–April, 2006.     

氧气A带吸收系数的温度依赖关系研究

氧气A带是理想的大气要素反演通道,吸收系数是重要的参数之一,它影响到反演结果的精度.结合HITRAN2012数据库和大气温度廓线图,分析氧气A带吸收系数的影响因素,推出各因素与温度的依赖关系,确定吸收系数随温度的变化.结果表明,氧气A带谱线半宽度受温度依赖系数影响较小,而受温度影响较大.线型因子随温度产生了两种变化,在谱线半宽度以外的谱线位置上,随温度的增大,函数值减小,而在中心频率到谱线半宽度的谱线位置上,随温度的升高而增大.谱线线强对温度具有强依赖关系.利用逐线积分算法计算氧气A带吸收系数,同时考虑了谱线半宽度的压力展宽效应和谱线线强及半宽度对温度的依赖关系,得出氧气A带吸收系数对温度的依赖关系主要来源于线强的温赖关系,尤其是中心频率处温度影响较大;而Lorentzian线型函数的温赖关系不明显.利用布鲁克光谱仪在1 cm-1下测量63 m处氧气A带的吸收光谱,与理论模型在同等条件下的透过率比较,误差小于0.83%,验证了温度校正模型的正确性.     

Transfer matrix theory for the optical absorption spectrum of mixed crystals

We study the density of states and optical absorption spectrum of linear mixed crystals in the one- dimensional alloy transfer matrix approximation. Local modes, which are present in the single impurity limit, develop into collective modes by merging into a band as the impurity concentration increases. The composition dependence of local and collective like optical absorption peaks is discussed, and we show that qualitatively different behaviours are obtained for single band and split bands type density of states.     

KDP晶体的太赫兹光谱研究

实验测量了室温下磷酸二氢钾（KDP）晶体0．2～1．6THz的时域光谱,以及50～4000cm叫范围内的远红外光谱,200～2000nm的紫外一可见一红外光谱。KDP晶体的禁带宽度是5．91eV,在测量范围内有一个很宽的声子吸收带,从0．2～205．5THz吸收系数在35～80cm-1,声子吸收的低频端小于0．2THz。最高的纵光学模声子的频率大约是205．5THz,由此求出这支声子的H—O键的力常数为13．13N·cm-1。     

Kinetics of the diffusion of an impurity atom on a fcc(111) surface

An analytical study of the migration of an embedded impurity atom over a solid surface under the influence of the diffusion of vacancies is performed. The case of small surface coverages of both vacancies and impurity atoms is considered. It is shown that the realization of multiple collisions of a single impurity atom with vacancies imparts a Brownian character to its motion. At long times, the dependence of the mean square displacement on the time differs little from the linear, whereas the spatial density distribution is close to the Gaussian, features that makes it possible to introduce a diffusion coefficient. For the latter, an analytical expression is derived, which differs from the product of the diffusion coefficient of vacancies and their relative concentration only by a numerical factor. The dependence of the diffusion coefficient of an impurity atom on the ratio of the frequency of its jumps to the frequency of jumps of vacancies is analyzed. In the kinetic mode, when the frequency of jump ω of the imurity atom is small, the diffusion coefficient of the impurity depends linearly on ω, whereas in the opposite case, a saturation occur and its dependence on the frequency of jumps of the impurity atom disappears.     

Mechanism for the optical absorption of cadmium sulfide

The optical transmission and reflection spectra of polycrystalline cadmium sulfide films heated in sulfur vapor have been measured at 77 and 300 °K. The absorption coefficient of the film is calculated for the range 2.25–3.5 eV. Analysis of the spectral dependence of the absorption coefficient shows indirect optical transitions of an electron from the upper valence band to the conduction band in the range 2.31–2.54 eV and direct substitutional transitions in the range 2.58–3.45 eV. Superimposed on this intrinsic absorption is selective absorption due to superstoichiometric atoms.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, Vol. 12, No. 4, pp. 97–103, April, 1969.     

Peculiar aspects of galvonamagnetic properties of InS single crystals

The electrical conductivity and the Hall effect in electronic InS single crystals have been studied over a wide range of temperatures, from 150 K to 800 K, and their peculiarities have been elucidated. At temperatures of 200 K the Hall coefficient passes through a maximum but does not reach a minimum. The peculiarities of the temperature dependence of the Hall coefficient are explained within the two-band model, which incorporates the conduction band and the impurity band. The parameters of the impurity band have been determined. The hopping mechanism of scattering has been found to predominate in InS single crystals in the temperature range 150–270 K, and at temperatures of 270 K to 400 K the mobility is limited, mainly by scattering on impurity ions. Above 400 K electrons are scattered on polar lattice vibrations.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 29–34, January, 1989.     

Infrared absorption on impurity excitations near the upper edge of spin-wave band of the antiferromagnet

The dependence of infrared (IR) light absorption on external magnetic field is considered when the impurity level approaches the upper edge of spin-wave band of antiferromagnet. It is explained a strongly nonlinear field dependence and rapid decrease of corresponding line intensity been observed experimentally in Fe_1?cCo_cF₂. Such behaviour is due to existence of some subthreshold range near the band edge and corresponds to the incoherent collective rearrangement (ICR) of the system spectrum.     

半导体超晶格子带间跃迁光吸收理论研究

从理论上研究了半导体超晶格子带间跃迁的光吸收性质,以GaAs/AlxGa1－xAs超晶格为例进行数值计算,分析了该材料的吸收系数随入射光光子能量、光场强度和超晶格结构参量（阱宽,垒宽,势垒高）的变化关系计算表明：随着入射光光子能量的变化,出现非对称的吸收峰;光强只改变吸收系数大小;超晶格结构参量会改变吸收谱的谱宽和吸收峰所对应的入射光频率随着超晶格阱宽（垒宽）的增大,吸收谱由宽变窄,吸收峰红移;随着超晶格Al组分变大,吸收谱变窄.