Matrix analysis of neutron spin-echo

We describe the general action of a neutron spin-turn coil by a rotation matrix, and the nett action of a sequence of spin-turns is then evaluated as the product of the relevant matrices. In the ideal neutron spin-echo configuration, the spin-turn sequence used is shown to have a resultant action described by the unit matrix if there is only elastic scattering, so that an initially polarized beam is transmitted with unchanged polarization. This is spin-echo focussing. Measurement of changes in the final polarization then provides information on the sample dynamics.Spin-echo focussing permits high resolution to be coupled with a broad incident wavelength spread. We calculate in detail the effect of this polychromaticity on the spinturn coils involved, and present experimental confirmation. General spin-echo configurations are then considered. Finally, we take into account the effect of spin-flip scattering from spin-incoherent samples, and show that spin-flip effects may be decoupled from dynamic effects in the analysis of spin-echo intensity.The techniques evolved are relevant to both monochromatic and polychromatic spinecho spectrometry. Emphasis has been placed on practical aspects of establishing correct spin-turn conditions and analysing spectrometer response in terms of relative transmitted intensity.     

Spin-flip conductance and magnetoresistance of magnetic nanocontacts

The quantized conductance of nanocontacts with atomic sizes is calculated with allowance made for the conduction-electron spin flip in terms of the quantum scattering theory. The exact solution of the Schrödinger equation describing the electron motion in a piecewise-smooth potential is used as the zeroth-order approximation of the perturbation theory. The probabilities of electron transmission (reflection) through a magnetic domain wall, as well as the spin-conserving and spin-flip conductances of the nanocontact, are calculated. It is demonstrated that the spin-flip conductance imposes the natural limitation on the formally infinite increase in the ballistic magnetoresistance of the nanocontact when its cross-sectional area tends to zero.     

Interpretation of the magnetoresistance in doped magnetic tunnel junctions

We present a quantum mechanical model of the magnetoresistance in ferromagnetic tunnel junctions artificially doped by the introduction of layers of impurities in the middle of the barrier. The electron transport across the barrier is described by a combination of direct tunneling, tunneling assisted by spin-conserving scattering and tunneling assisted by spin-flip scattering. With this model, we interpret recent experimental results concerning the dependence of the TMR amplitude on the amount of impurities in the barrier and on temperature. Received 1st February 2001 and Received in final form 14 June 2001     

Spin-flip transport through an interacting quantum dot

The spin-flip associated transport based on the Anderson model is studied. It is found that the electrons are scattered due to spin-flip effect via the normal, mixed and Kondo channels. The spin-flip scattering via Kondo channel enhances the Kondo resonance peak and causes a slight blue shift. The conductance is suppressed by the spin-flip scattering. This is attributed to the reason that electrons with energy near Fermi level are scattered by Kondo channel.     

Exact Solutions of the Dirac Equation for an Electron in a Magnetic Field with Shape Invariant Method

Based on the shape invariance property we obtain exact solutions oI the Dirac equation for an electron moving in the presence of a certain varying magnetic field, then we also show its non-relativistic limit.     

Probing spin-flip scattering in ballistic nanosystems

Because spin-flip length is longer than the electron mean-free path in a metal, past studies of spin-flip scattering are limited to the diffusive regime. We propose to use a magnetic double barrier tunnel junction to study spin-flip scattering in the nanometer sized spacer layer near the ballistic limit. We extract the voltage and temperature dependence of the spin-flip conductance Gs in the spacer layer from magnetoresistance measurements. In addition to spin scattering information including the mean-free path (70 nm) and the spin-flip length (1.0-2.6 microm) at 4.2 K, this technique also yields information on the density of states and quantum well resonance in the spacer layer.     

Canonical quantization of Galilean covariant field theories

The Galilean-invariant field theories are quantized by using the canonical method and the five-dimensional Lorentz-like covariant expressions of non-relativistic field equations. This method is motivated by the fact that the extended Galilei group in 3 + 1 dimensions is a subgroup of the inhomogeneous Lorentz group in 4 + 1 dimensions. First, we consider complex scalar fields, where the Schrödinger field follows from a reduction of the Klein-Gordon equation in the extended space. The underlying discrete symmetries are discussed, and we calculate the scattering cross-sections for the Coulomb interaction and for the self-interacting term λΦ⁴. Then, we turn to the Dirac equation, which, upon dimensional reduction, leads to the Lévy-Leblond equations. Like its relativistic analogue, the model allows for the existence of antiparticles. Scattering amplitudes and cross-sections are calculated for the Coulomb interaction, the electron-electron and the electron-positron scattering. These examples show that the so-called ‘non-relativistic’ approximations, obtained in low-velocity limits, must be treated with great care to be Galilei-invariant. The non-relativistic Proca field is discussed briefly.     

Basic Requirements of Spin-Flip Raman Scattering on Excitonic Resonances and Its Modulation through Additional High-Energy Illumination in Semiconductor Heterostructures

We describe the major requirements to experimentally perform and observe resonant spin-flip Raman scattering on excitonic resonances in low-dimensional semiconductors. We characterize in detail the properties of this resonant light scattering technique and evaluate the criteria, which must be fulfilled by the experimental setup and the semiconductor sample studied to be able to observe a spin-flip scattering process. We also demonstrate the influence of additional unpolarized laser illumination with energies, which exceed considerably the band gap energy of the semiconductor nanostructure under study, on the resonantly excited electron spin-flip scattering in InAs-based quantum dot ensembles as well as on the paramagnetic Mn-ion spin-flip in (Zn,Mn)Se/(Zn,Be)Se quantum wells.     

Lifetimes of excited electrons in Fe and Ni: first-principles GW and the T-matrix theory

We present the results of an ab initio calculation of excited electron lifetimes in ferromagnetic materials which incorporates non-spin-flip and spin-flip processes within GW and T-matrix approaches. The method we develop is applied to low-energy electron excitations in Fe and Ni. It is found that the spin-wave generation in Fe essentially reduces the lifetimes of the spin-minority d states whereas the free-electron-like spin-minority states and all the spin-majority states are affected much less. The influence of spin-flip scattering on the lifetimes in Ni appears to be weak. The T-matrix non-spin-flip processes are important for the lifetimes of excited spin-minority states.     

Lifetimes of excited electrons in Fe and Ni: first-principles GW and the T-matrix theory

We present the results of an ab initio calculation of excited electron lifetimes in ferromagnetic materials which incorporates non-spin-flip and spin-flip processes within GW and T-matrix approaches. The method we develop is applied to low-energy electron excitations in Fe and Ni. It is found that the spin-wave generation in Fe essentially reduces the lifetimes of the spin-minority d states whereas the free-electron-like spin-minority states and all the spin-majority states are affected much less. The influence of spin-flip scattering on the lifetimes in Ni appears to be weak. The T-matrix non-spin-flip processes are important for the lifetimes of excited spin-minority states.     

Intradot spin-flip Andreev reflection tunneling through a ferromagnet-quantum dot-superconductor system with ac field

We investigate Andreev reflection (AR) tunneling through a ferromagnet-quantum dot-superconductor (F-QD-S) system in the presence of an external ac field. The intradot spin-flip scattering in the QD is involved. Using the nonequilibrium Green function and BCS quasiparticle spectrum for superconductor, time-averaged AR conductance is formulated. The competition between the intradot spin-flip scattering and photon-assisted tunneling dominates the resonant behaviors of the time-averaged AR conductance. For weak intradot spin-flip scattering strengths, the AR conductance shows a series of equal interval resonant levels. However, the single-peak at main resonant level develops into a well-resolved double-peak resonance at a strong intradot spin-flip scattering strength. Remarkable, multiple-photon-assisted tunneling that generates photonic sideband peaks with a variable interval has been found. In addition, the AR conductance-bias voltage characteristic shows a transition between the single-peak to double-peak resonance as the ratio of the two tunneling strengths varies.     

The Andreev tunneling behaviors in the FM/QD/SC system with intradot spin-flip scattering

The resonant behaviors of spin-dependent linear AR conductance, the spin-dependent AR current, the electron occupation number and spin accumulation in the QD are theoretically investigated in the FM/QD/SC system with intradot spin-flip scattering. The novel resonant behaviors of spin-dependent AR conductance versus Fermi energy are revealed, which are rather different from the AR conductance versus the dot's energy level case [Cao et al., Phys. Rev. B 70 (2004) 235341]. It is proved that the split of the resonant peak can be induced by the competition between the coupling strengths to the FM and SC leads, the intradot spin-flip scattering, and the gate voltage. The number, the widths, and the distance of the peaks could be controlled by tuning the relevant parameters. The resonance of AR current can take place only when the energy level of QD lines up with the right lead chemical potential and blows the left lead chemical potential. The magnitude of the resonant AR current depends on the number of resonant levels involved in the Andreev tunneling process. It is also proved that the spin-flip scattering can suppress the spin accumulation effectively, and induce the spin polarization of AR conductance and AR current simultaneously. The results make us understand better the fundamental in this system, and are useful for the design of spintronic devices.     

The viscosity cross-section for elastic electron-xenon collisions including electron spin polarization

The results of the evaluation of the viscosity cross-section for elastic electron-xenon collisions, taking into account the spin-orbit interaction of the continuum electron, in the energy interval from 0.1 eV to 50 eV are presented and discussed. The calculations are performed on the basis of three theoretically derived sets of phase shift data obtained by different authors and on the deduced relativistic expression for the viscosity cross-section in terms of phase shifts discerning the spin-up and spin-down states of the scattered electrons. Comparison with viscosity cross-sections, as evaluated from non-relativistic phase shifts extracted from experiments, strongly favours the relativistic results. The assumption of isotropic scattering is critically examined and the error induced by its use is shown to persist to the same extent as in non-relativistic calculations, at least in the energy region considered. Received: 22 April 1998 / Received in final form: 16 December 1998     

Spin-dependent conductance in FM/quantum-dot/FM tunneling system

We present a theoretical study of the spin-dependent conductance spectra in a FM/semiconductor quantum-dot (QD)/FM system. Both the Rashba spin-orbit (SO) coupling in the QD and spin-flip scattering caused by magnetic barrier impurities are taken into account. It is found that in the single-level QD system with parallel magnetic moments in the two FM leads, due to the interference between different tunneling paths through the spin-degenerate level, a dip or a narrow resonant peak can appear in the conductance spectra, which depends on the property of the spin-flip scattering. When the magnetizations of the two FM leads are noncollinear, the resonant peak can be transformed into a dip. The Rashba SO coupling manifests itself by a Rashba phase factor, which changes the phase information of every tunneling path and can greatly modulate the conductance. When the QD has multiple levels, the Rashba interlevel spin-flip effect appears, which changes the topological property of the structure. Its interplay with the Rashba phase can directly tune the coupling strengths between dot and leads, and can result in switching from resonance into antiresonance in the conductance spectra.     

Behavior of the hadron potential at large distances and properties of the hadron spin-flip amplitude

The impact of the form of the hadron potential at large distances on the behavior of the hadron spin-flip amplitude at small angles is examined. The t-dependence of the spin-flip amplitude of high-energy hadron elastic scattering is analyzed under different assumptions on the hadron interaction. It is shown that the long tail of the nonGaussian form of the hadron potential of the hadron interaction in the impact parameter representation leads to a large value of the slope of the spin-flip amplitude (without the kinematical factor ) as compared with the slope of the spin-nonflip amplitude. This effect can explain the form of the differential cross-section and the analyzing power at small transfer momenta. The methods for the definition of the spin-dependent part of the hadron scattering amplitude are presented. A possibility to investigate the structure of the hadron spin-flip amplitude from the accurate measure of the differential cross-section and the spin correlation parameters is shown. Received: 14 December 2001 / Accepted: 17 January 2002     

Computations of relativistic LEED intensities and spin-polarisations for tungsten (001)

The effects of relativistic corrections in low-energy electron diffraction intensity calculations are assessed by reference to relativistic and non-relativistic computations for tungsten (001). Small changes are observed in the calculated intensities and band structures and a significant degree of spin-polarisation is predicted for the diffracted beams. The spin-polarisation profiles are more complicated than those observed in gas-phase experiments because of the influence of multiple scattering. The results suggest that LEED could provide a strong source of polarised electrons for use in scattering experiments. It is suggested that in future LEED experiments both spin-polarisation and intensity measurements should be performed on the diffracted electron beams.     

On the interaction of stimulated spin-flip raman scattering and stimulated recombination radiation in InSb

We have studied the interaction of stimulated spin-flip Raman scattering and stimulated recombination radiation in n-InSb using a CW CO pump laser. A change in linewidth and output power of second Stokes spin-flip radiation is observed when the tuning curve of the first Stokes stimulated spin-flip radiation and the stimulated recombination radiation cross. The observations are explained using a simple rate equation model.     

Spin-flip effects in a parallel-coupled double quantum dot molecule

We investigate theoretically the electronic transport through a parallel-coupled double quantum dot (DQD) molecule attached to metallic electrodes, in which the spin-flip scattering on each quantum dot is considered. Special attention is paid to the effects of the intradot spin-flip processes on the linear conductance by using the equation of motion approach for Green’s functions. When a weak spin-flip scattering on each quantum dot is present, the single Fano peak splits into two Fano peaks, and the Breit–Wigner resonance may be suppressed slightly. When the spin-flip scattering strength on each quantum dot becomes strong, the linear conductance spectrum consists of two Breit–Wigner peaks and two Fano peaks due to the quantum interference effects. The positions and shapes of these resonant peaks can be controlled by using the magnetic flux through the quantum device.     

Composite-fermion spin excitations as nu approaches 1/2: interactions in the Fermi sea

Measurements of low-lying spin excitations by inelastic light scattering unveil a delicate balance between spin reversal and Fermi energies in the Fermi sea of composite fermions that emerges in the limit of nu --> 1/2. The interplays between these two fundamental quasiparticle interactions are uncovered in lowest spin-flip excitations in which the spin orientation and Landau level index of composite fermions change simultaneously. A collapse of the spin-flip excitation gap as nu --> 1/2 is linked to vanishing quasiparticle energy level spacings and loss of full spin polarization.     

Spin-flip and domain wall magnetoresistance in quantum magnetic nanocontacts

The theory of nanosize point contacts made of ferromagnetic metals is developed. A general quantum scattering theory is applied to calculate magnetoresistance of a nanocontact with a domain wall located in the constriction. The exact solution of the electron motion in a potential of the linear domain wall is used as a zero-order approximation. Spin-flip and spin-conserving quantized conductances of the nanocontact are calculated by the perturbation theory by the difference between the model and the Cabrera-Falicov potentials of the domain wall. It is explicitly shown that spin-flip conductance imposes natural limitation on magnetoresistance of the point contact, which otherwise diverges in the regime of complete spin-rectified conductance through the contact.