选择性电极型晶硅太阳能电池金属栅线印刷位置精度的检测方法

提出一种金属栅线印刷位置的检测方法,适用于直接检测金属栅线印刷位置与选择性重扩散栅线印刷区的重合精度,可以实时在线检测栅线印刷位置精度并反馈偏差值,实现对位印刷的闭环控制。该检测方法同时也为采用图形识别技术和图形对位技术的选择性电极型晶硅太阳能电池丝网印刷设备提供了可直观衡量设备印刷精度的验证方法。此外,利用该检测方法可以实现对网板使用寿命的监测,提高网板和丝网印刷设备的使用率,降低生产成本,简化工艺控制。     

深槽LIP太阳能电池栅线电极技术

介绍了深槽LIP太阳能电池栅线电极的制造方法,对LIP工艺及装置进行了详细的说明。通过试验表明,用新工艺制造的太阳能电池片的转换效率可达19.4%。讨论了与传统工艺相比较,深槽LIP太阳能电池片在光学和电学性能上的提升机理。     

微晶硅/晶体硅/微晶硅异质结太阳能电池窗口层的模拟计算与优化

采用Afors-het太阳能电池异质结模拟软件,模拟了不同工作温度下,微晶硅窗口层对μc-si(p)/c-si(n)/μc-si(p+)异质结太阳能电池性能的影响,结果表明:随着微晶硅窗口层帯隙的增加,转化效率先增加后下降、开路电压不断增加;掺杂浓度的增加,电池性能整体呈现先上升后小幅下降的趋势;厚度的增加,电池的性能整体上呈现下降的趋势。随着工作温度的增加,微晶硅窗口层对应的最佳厚度和掺杂浓度值都有明显的减小趋势;但其对应的最佳帯隙有明显的增加的趋势。该实验结果为在不同温度下工作的电池提供了商业化生产的实验参数。     

有机太阳能电池电极修饰方法的研究进展

20世纪以来,能源问题日益成为制约世界经济发展的瓶颈。人们逐渐把目光投向可再生无污染能源,诸如太阳能、风能、生物能、潮汐能等可循环利用资源,其中太阳能的应用前景最为广阔,把太阳能转化为电能已成为现实。文章重点研究提高有机光伏电池效率的电极修饰方法,主要介绍了有机太阳能电池阴阳两极界面修饰的材料和方法,同时阐述了新的阳极材料和电池结构模型即反型倒置太阳能电池的研究进展情况,通过大量的理论和实验证明,电极修饰可极大地提高器件的光电转换效率、寿命和稳定性。     

太阳能电池印刷线关键技术及发展趋势

简要介绍了光伏行业背景,太阳能印刷线所完成的工序,以及国内外太阳能印刷线的历史、现状,重点分析太阳能电池印刷线的关键技术及发展趋势。     

基于丝网印刷的N型硅基太阳能电池的研制

传统制备P型硅基太阳能电池的方法被应用到N型硅片上,成功制备出n+np+结构的N型硅基太阳能电池。在制备过程中利用补偿法形成np+背结,无需保护背面。最高效率为13.1%(Voc=0.58V,Jsc=31.2mA/cm2,FF=72.4%)。     

机床轴线位置精度检测技术

主要介绍了机床轴线位置精度的检测方法、评定标准以及测量过程可能产生的误差来源。     

选择性区域掺杂太阳能电池的研究与发展

选择性区域掺杂太阳能电池是人们实现高效率、低成本太阳能电池的新方法之一。在此简单介绍了选择性区域掺杂太阳能电池的结构特征以及性能特点,并介绍目前国内外常采用的选择性区域掺杂太阳能电池的制备方法:两步扩散法、光刻掩膜法和丝网印刷电极法,通过图表逐个分析其制备步骤及优缺点。最后展望了选择性区域掺杂太阳能电池的发展趋势,提出了两种工艺方法来解决选择性掺杂太阳能电池制备工艺复杂的途径,分别是热扩散法和激光掺杂法。     

纤维素对光伏电池电极铝浆流变性能的影响

研究了太阳能电池铝电极浆料中乙基纤维素(EC)的相对分子质量对浆料流变特性的影响,对比了含有不同相对分子质量的EC的铝浆的丝网印刷效果。结果表明,随着EC相对分子质量的增大,一方面,浆料的触变性大幅度提高,高剪切速率下的黏度下降,有利于丝网印刷时浆料通过网孔;另一方面,印刷线条高宽比逐渐提高,线条断面形状趋于矩形。由此可见含有相对分子质量较大的EC的铝浆的流变性能更满足太阳能电池电极的高精度印刷要求,有利于太阳能电池效率的提高。     

基于线结构光的精密装配位置检测方法研究

精密装配位置检测包括定向误差检测和定位误差检测,实际生产中精密零部件装配缺少适应性强的检测方法,往往需要大量的人工投入.针对传统精密装配位置检测中低效率、精度差问题,提出一种基于线结构光的机器视觉位置检测方法.通过线结构光提供被测零件的深度特征;通过平移、转动被测装配部件,完成装配区域的图像扫描.本文主要介绍了线结构光...     

Electrical properties of fine line printed and light‐induced plated contacts on silicon solar cells

The properties of fine‐line printed contacts on silicon solar cells, in combination with light‐induced plating (LIP), are presented. The seed layers are printed using an aerosol system and a new metallization ink called SISC developed at Fraunhofer ISE. The influence of multiple layer printing on the contact geometry is studied as well as the influence of the contact height on the line resistivity and on the contact resistance. The dependence between contact resistance and contact height is measured using the transfer length model (TLM). Further on, it is explained by taking SEM images of the metal–semiconductor interface, that a contact height of less than 1 µm or a minimum ink amount of only 4–6 mg is sufficient to contact a large area (15·6 cm × 15·6 cm) silicon solar cell on the front side and results in a contact resistance R_c × W < 0·5 Ω cm. As the line resistivity of fine‐line printed fingers needs to be reduced by LIP, three different plating solutions are tested on solar cells. The observed differences in line resistivity between ρ_f = 5 × 10⁻⁸ and 2 × 10⁻⁸ Ω m are explained by taking SEM pictures of the grown LIP‐silver. Finally, the optimum LIP height for different line resistivities is calculated and experimentally confirmed by processing solar cells with an increasing amount of LIP silver. Copyright © 2010 John Wiley & Sons, Ltd.     

Chemical natures and distributions of metal impurities in multicrystalline silicon materials

We present a comprehensive summary of our observations of metal‐rich particles in multicrystalline silicon (mc‐Si) solar cell materials from multiple vendors, including directionally‐solidified ingot‐grown, sheet, and ribbon, as well as multicrystalline float zone materials contaminated during growth. In each material, the elemental nature, chemical states, and distributions of metal‐rich particles are assessed by synchrotron‐based analytical x‐ray microprobe techniques. Certain universal physical principles appear to govern the behavior of metals in nearly all materials: (a) Two types of metal‐rich particles can be observed (metal silicide nanoprecipitates and metal‐rich inclusions up to tens of microns in size, frequently oxidized), (b) spatial distributions of individual elements strongly depend on their solubility and diffusivity, and (c) strong interactions exist between metals and certain types of structural defects. Differences in the distribution and elemental nature of metal contamination between different mc‐Si materials can largely be explained by variations in crystal growth parameters, structural defect types, and contamination sources. Copyright © 2006 John Wiley & Sons, Ltd.