Phase change in CoTi2 induced by MeV electron irradiation

The phase change induced by MeV electron irradiation in the intermetallic compound E9₃–CoTi₂ was investigated using high-voltage electron microscopy. Under MeV electron irradiation, CoTi₂ was first transformed into an amorphous phase and, with continued irradiation, crystallite formation in the amorphous phase (i.e. formation of crystallites of a solid-solution phase within the amorphous phase) was induced. The critical temperature for amorphisation was around 250 K. The total dose (dpa) required for crystallite formation (i.e. that required for partial crystallisation) was high (i.e. 27–80 dpa) and, even after prolonged irradiation, the amorphous phase was retained in the irradiated sample. Such partial crystallisation behaviour of amorphous Co₃₃Ti₆₇ was clearly different from the crystallisation behaviour (i.e. amorphous-to-solid solution, polymorphous transformation) of amorphous Cr₆₇Ti₃₃ reported in the literature. A possible cause of the difference is discussed.     

Microstructural evolution and phase transformation in the liquid-solid Al/Ni diffusion couple

The liquid-solid Al/Ni diffusion couple was successfully fabricated by annealing at 1373?K for 48?h followed by water-quenching. Cross-sectional scanning and transmission electron microscopic analyses show that the multilayered diffusion zones comprise the following sequence of layers: γ-Ni(Al) | γ′-Ni₃Al | β′-NiAl | Ni-rich β-NiAl | β-NiAl. The Ni-rich β-NiAl upon quenching undergoes a martensitic transformation from β (B2) to β′ (L1₀). The β′ martensite is found to be internally twinned on the {111}<112>system. The volume changes and strains due to martensitic phase transformation, the precipitation of γ′-Ni₃Al from γ-Ni(Al) and lattice mismatch between Ni-rich β-NiAl and β-NiAl in the Al/Ni diffusion couple are quantitatively determined. The cuboidal γ′ phase coherently precipitates cube-on-cube in γ-Ni(Al). Composition fluctuations existing in the supersaturated solid solution γ-Ni(Al), provide sufficient driving force for the precipitation and facilitate nucleation and growth of the γ′ phase under isothermal annealing.     

Raman scattering study of temperature and hydrostatic pressure phase transitions in Rb2KTiOF5 crystal

Raman spectra of Rb₂KTiOF₅ crystal were obtained and analyzed in the temperature range from 77 to 297 K and under hydrostatic pressure up to 4.2 GPa (at T = 295 K). The experimental results were compared with quantum‐chemical simulation of TiOF₅ pseudo‐octahedron. To interpret effects of lattice ordering, phonon spectra of several ordered phases of Rb₂KTiOF₅ were calculated within ab initio generalized Gordon–Kim model, and ordering of TiOF₅ molecular groups were simulated within Monte Carlo approach. The spectra exhibited orientation disordering in the cubic phase under ambient conditions. Cooling below the phase transition temperature (215 K) leads to partial ordering of the structure. The isotropic perovskite‐like phase was found to undergo first‐order transition into a low‐symmetry anisotropic phase at about 1 GPa. Further compression up to 4.1 GPa did not show any effects associated with phase transitions. Copyright © 2011 John Wiley & Sons, Ltd.     

Phase transition in Cu2+-doped RbH2 PO4 as observed by EPR

The electron paramagnetic resonance (EPR) spectra of Cu²⁺-doped RbH₂ PO₄ at elevated temperatures indicate a phase transition at 358 K. The EPR-silent state at this temperature is attributed to a so-called polymeric phase transition. After the transition when the temperature is lowered to 293 K, the EPR signal does not appear; therefore, the transition is irreversible. This result seems to be in agreement with the other observations. The EPR spectra for the sample indicate the presence of two sites for Cu²⁺, and the values of EPR parameters are in accord with the literature on Cu²⁺-doped single crystals. Any other phase transitions could not to be observed at low temperatures down to 113 K.     

Critical behaviour of Sn2P2S6 and Sn2P2(Se0.28S0.72)6 crystals under high hydrostatic pressures

Basing on the temperature dependences of optical birefringence for Sn₂P₂S₆ and Sn₂P₂(Se_0.28S_0.72)₆ crystals subjected to hydrostatic pressures, we prove unambiguously that Sn₂P₂S₆ reveals a tricritical point on its (p, T)-phase diagram with the coordinates (p, T) = (4.3 kbar, 259 K), so that the second-order phase transition transforms into the first-order one whenever the pressure increases above 4.3 kbar. We also find that increasing hydrostatic pressure applied to Sn₂P₂(Se_0.28S_0.72)₆ leads to the change in the phase transition character from tricritical to first order. Further increase in the pressure up to ~2.5 kbar imposes splitting of the first-order paraelectric-to-ferroelectric phase transition into two phase transitions, a second-order paraelectric-to-incommensurate one and a first-order incommensurate-to-ferroelectric transition.     

One step ultrafast mechanosynthesis of nanocrystalline cubic Ti0.9Al0.1B and its microstructure evolution

Nanocrystalline single phase cubic Ti_0.9Al_0.1B has been prepared at room temperature in a minimum duration of 4 h by mechanical alloying the stoichiometric mixture of Ti, Al and B powders in a high energy planetary ball mill under argon atmosphere. The Rietveld's structure refinement of X-ray diffraction data reveals that cubic Ti–Al–B phase is initiated just after 1 h of milling and at the same time α-Ti (hcp) phase partially transforms to metastable β-Ti (bcc) phase. In the course of milling, ordered Ti–Al–B lattice gradually transforms to a distorted state and the degree of distortion increases with milling time up to 15 h. The formation of cubic Ti_0.9Al_0.1B is also confirmed from the selected area electron diffraction (SAED) pattern. Microstructure characterization by high resolution transmission electron microscopy (HRTEM) reveals that Ti–Al–B nanoparticles are isotropic in nature with average particle size ~4.5 nm and is in good agreement with the value obtained from the Rietveld analysis of X-ray diffraction data.     

Phase transitions and electrical conduction in thermal energy storage compound (n-C12H25NH3)2CdCl4

Differential scanning calorimetry (DSC) and differential thermal analysis (DTA) are performed for the compound (n-C₁₂H₂₅NH₃)₂CdCl₄. The ac conductivity σ_(ω,T), and the complex dielectric permittivity ?*_(ω,T) are measured as a function of temperature (100 K < T < 375 K) and at some selected frequencies (3 → 100 kHz). Two structural phase transitions are detected at T = (330 ± 1) K and T = (343 ± 1) K as minor and major transitions, respectively. The analysis of the measured electrical parameters reveals that the frequency-dependent conductivity obeys the power law, and the quantum mechanical tunneling (QMT) model is the main conduction mechanism in the low-temperature phase (LTP; phase III). The role of hydrogen bond N–H…Cl as a trigger force for phase transitions has been discussed. While the LTP is of the order–disorder type, the high-temperature phase (HTP) or phase I seems to be conformational and represents the main transition.     

Damage induced in garnets by heavy ion irradiations: a study by optical spectroscopies

The damage induced by heavy-ion irradiation has been studied in yttrium iron garnet (Y₃Fe₅O₁₂ or YIG) films, doped with Ca, Tb and Tm, grown by liquid-phase epitaxy on gadolinium gallium garnet (Gd₃Ga₅O₁₂ or GGG) substrates. Irradiations of doped-YIG epitaxial films and GGG substrates with 36-MeV ¹⁸³W and 12-MeV ¹⁹⁷Au ions were applied for fluences between 1 × 10¹³ and 3 × 10¹⁵ cm^–2 near room temperature. The radiation damage was monitored by micro-Raman spectroscopy and UV–visible optical absorption spectroscopy. Raman spectra revealed that amorphisation was achieved in YIG for both ions, whereas a high lattice disorder was induced in GGG without reaching amorphisation for the Au ion irradiation. Raman spectra also showed that a major damage of the tetrahedral sites was induced in GGG, as previously found for YIG. It is concluded that with such ions reaching the stopping power threshold of track formation in YIG and GGG the observed rate of amorphisation may result from a combination of electronic and nuclear energy losses as calculated using the unified thermal spike model.     

SEM and TEM analysis of composite of ZrO2-Ti system

3Y-ZrO₂-Ti composites obtained by slip casting method were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Moreover, the Vickers hardness was measured. The experiments show the complex microstructure of composites. The tetragonal zirconium dioxide (t-ZrO₂) and monoclinic zirconium dioxide (m-ZrO₂) as a composite matrix were detected at XRD analysis. SEM observations revealed that Ti -rich phase are uniform distributed in composites. Moreover, the large and very fine precipitations were found. The very fine Ti rich precipitations were located at ZrO₂ grain boundaries as well as in the triple-points. TEM experiments confirmed that in the sintered composites 3Y-ZrO₂ – 10%Ti the uniaxial ZrO₂ grains (100–600 nm), fine monoclinic martensitic plates and fine round monoclinic particles (20–40 nm) of ZrTiO₂ phase were exist. The complex microstructures of 3Y-ZrO₂-Ti composites have a high hardness as a result of existing fine ZrTiO₂ and other Ti oxides precipitations.     

Vacancy generation in silicon in the temperature range 100–633 K under electron irradiation

The processes of radiation defect formation in Si with 1 MeV electron irradiation in the temperature range 100–633 K have been investigated. It is established that the generation efficiency of vacancies λ_V increases with temperature, then starts to saturate at temperatures of 250 K and finally stays constant at T>300 K. It is shown that at high temperatures, the λ_V dependence can be caused by the additional scattering of “hot” interstitial atoms on acoustical and optical phonons, the numbers of which increase with the temperature. An explanation, based on the creation of quasi-molecule of “hot” interstitial and lattice atoms, is proposed.     

Phase transformations and structural characteristics of AL–Cu–Co(–Si) decagonal phase

The phase transformations and structural characteristics of the Al-Cu-Co-Si alloy have been studied by neutron diffraction and high-resolution electron microscopy. The Al₆₅Cu_17.5Co_17.5 decagonal phase is stable in the temperature range between 973 K and 1350 K. At the low-temperature end, it relaxes to a microcrystalline approximant structure. At the high-temperature end, it melts directly into liquid. Two distinct orthorhombic phases are identified in the Al₆₃Cu_17.5Co_17.5Si₂ microcrystalline structure. They are composed of several structure units that can also construct the Penrose tiling. Because of lack of units, a single orthorhombic phase cannot undergo the transformation towards the high-temperature decagonal phase. An analysis of the orientation relationships between the CsCl and orthorhombic phases leads to the definition of Penrose tiling-like subnetworks inside the orthorhombic unit cells so that these orthorhombic phases can be regarded as the periodic patchworks of quasiperiodic subnetworks.     

Structural phase transition in Bi2Te3 under high pressure

Structural change in Bi₂Te₃ under high pressure up to 16.6 GPa has been studied by powder x-ray diffraction. We observed two times of phase transitions at room temperature at the pressures of 8 and 14 GPa, respectively. According to our preliminary result on electrical resistance, it is reasonable to suppose that superconducting transition with T _c =2.8 K at the pressures of 10.2 GPa is observed in phase II. On the other hand, we found anomalies of the pressure dependences of lattice parameters and volume at around 2 GPa, which probably means the change in electrical structure on the Fermi surface.     

Optical studies of the ferroelastic phase transitions in KFe(MoO4)2

ABSTRACT

The ferroelastic phase transitions in KFe(MoO₄)₂ have been studied by means of polarized light microscopy. The crystal undergoes a sequence of ferroelastic phase transitions. It has been found that the second transition consists of two transitions separated by the temperature interval of about 0.4 K. Both these transitions are of the first order and are evidenced through a phase front passing, without the domain structure rebuilding. The disposition of optical indicatrix axes n_g, n_m has been established, and the birefringence has been measured in the plane (0001) in the temperature range covering all ferroelastic phases. From temperature studies of the morphic birefringence, a critical exponent of the order parameter has been estimated.     

Effect of simultaneous helium implantation on the microstructure evolution of Inconel X-750 superalloy during dual-beam irradiation

This study focuses on investigation into the effect of helium implantation on microstructure evolution in Inconel X-750 superalloy during dual-beam (Ni⁺/He⁺) irradiation. The 1 MeV Ni⁺ ions with the damage rate of 10^?3 dpa/s as well as 15 keV He⁺ ions using rate of 200 appm/dpa were simultaneously employed to irradiate specimens at 400 °C to different doses. Microstructure characterization has been conducted using high-resolution analytical transmission electron microscopy (TEM). The TEM results show that simultaneous helium injection has significant influence on irradiation-induced microstructural changes. The disordering of γ′ (Ni₃ (Al, Ti)) precipitates shows noticeable delay in dose level compared to mono heavy ion irradiation, which is attributed to the effect of helium on promoting the dynamic reordering process. In contrast to previous studies on single-beam ion irradiation, in which no cavities were reported even at high doses, very small (2–5 nm) cavities were detected after irradiation to 5 dpa, which proved that helium plays crucial role in cavity formation. TEM characterization also indicates that the helium implantation affects the development of dislocation loops during irradiation. Large 1/3 〈1?1?1〉 Frank loops in the size of 10–20 nm developed during irradiation at 400 °C, whereas similar big loops detected at higher irradiation temperature (500 °C) during sole ion irradiation. This implies that the effect of helium on trapping the vacancies can help to develop the interstitial Frank loops at lower irradiation temperatures.     

Heat capacity, structural disorder, and the phase transition in cryolite (NH4)3Ti(O2)F5

The heat capacity, T-p phase diagrams, and unit cell parameters of cryolite (NH₄)₃Ti(O₂)F₅ were studied over a wide temperature range. A phase transition was found near 226 K, and its thermodynamic characteristics and their dependence on the crystallization conditions were determined. The coordinates and thermal parameters of atoms in the Fm3m phase were refined. An analysis of the electron density distribution and the transition entropy showed that the mechanism of the structural transition involves, above all, rotation of the Ti(O₂)F₅ octahedra. Possible models of disordering of tetrahedral ammonium groups are considered.     

Metamagnetic effects in epitaxial BaFe<Subscript>1.8</Subscript>Cr<Subscript>0.2</Subscript>As<Subscript>2</Subscript> thin films

Epitaxial BaFe_1.8Cr_0.2As₂ thin films with the tetragonal c-axis perpendicular to the thin film surface were grown on (LaAlO₃)_0.3(Sr₂AlTaO₆)_0.7 (LSAT) single crystalline substrates using pulsed laser deposition (PLD). Resistive measurements indicate the existence of two transitions at temperatures of about 80 K and 40 K. The transition at 80 K is attributed to the structural transition from the high temperature tetragonal phase to the low temperature orthorhombic phase accompanied with the magnetic transition from a paramagnetic to an antiferromagnetic state as known for doped bulk systems. Below T ≈ 40 K the magnetization curves measured perpendicularly to the orthorhombic c-axis in fields up to 9 Tesla show two inflexion points indicating metamagnetic transitions.     

Structure imaging and vanadium substitution in cubic TiCr2 Laves phase

Properties of Laves phase compounds can be tailored by alloying and microstructural engineering. V-substituted cubic TiCr₂ Laves phase has been studied to understand the location of V atoms in the lattice, by structural imaging and first-principle computations. Even though Ti, V and Cr appear next to each other in the periodic table, V preferentially replaces the Ti lattice producing anti-site defects. The defect formation energy for V substitution in Ti and in Cr lattice is 0.29 and 0.40 eV, respectively. V replacement in the Ti lattice generates atomic scale strain. Atomic numbers of V, Ti and Cr being very close, this phase is not quite suitable for incoherent imaging for understanding the structure and the chemistry. Instead, difference in channelling behaviour of electron waves along the Ti columns and along the Cr columns could be exploited to preferentially image the individual atom columns. Nature of the exit phase wave, phase and amplitude has been used to understand the contrast qualitatively. The intensity distribution of any particular atom column that is disturbed by the presence of foreign atom has been used to detect the position of V atoms. This method could be extended to study other Laves phases and complex intermetallic structures to understand their structure, defects and interfaces.     

Vacancy effects on one-dimensional migration of interstitial clusters in iron under electron irradiation at low temperatures

We performed in situ observation of one-dimensional (1D) migration of self-interstitial atom (SIA) clusters in iron under electron irradiation at 110–300 K using high-voltage electron microscopy. Most 1D migration was stepwise positional changes of SIA clusters at irregular time intervals at all temperatures. The frequency of 1D migration did not depend on the irradiation temperature. It was directly proportional to the damage rate, suggesting that 1D migration was induced by electron irradiation. In contrast, the 1D migration distance depended on the temperature: distribution of the distance ranged over 100 nm above 250 K, decreased steeply between 250 and 150 K and was less than 20 nm below 150 K. The distance was independent of the damage rate at all temperatures. Next, we examined fluctuation in the interaction energy between an SIA cluster and vacancies of random distribution at concentrations 10^?4–10^?2, using molecular statics simulations. The fluctuation was found to trap SIA clusters of 4 nm diameter at vacancy concentrations higher than 10^?3. We proposed that 1D migration was interrupted by impurity atoms at temperatures higher than 250 K, and by vacancies accumulated at high concentration under electron irradiation at low temperatures where vacancies are not thermally mobile.