The effect of BZO doping concentration and thickness dependent properties of YBCO films grown by PLD on buffered NiW substrates

The effect of BaZrO₃ (BZO) doping is systematically studied in YBa₂Cu₃O_6+x (YBCO) thin films deposited by pulsed laser deposition (PLD) on buffered NiW substrates. Based on the structural and magnetic properties, the optimal BZO doping concentration is obtained to vary between 4 and 7.5 wt.%, depending mainly on applied magnetic field. This relatively high optimal concentration is linked to the nanograined target material and metal substrate that cause low-angle grain-boundaries and in-plane spread of YBCO crystals on NiW. Thickness dependent analysis of undoped and BZO-doped YBCO films predicts differences in growth mechanisms where early growth next to the substrate interface is 2D-type in BZO-doped films. This leads to the situation where crystallographic structure as well as superconducting properties are improved when the film develops and the thickness is increased. Therefore from the resistivity measurements a threshold thicknesses where reasonable properties occur are determined for both set of films. Measurements in thermally activated flux-flow regime (TAFF) indicate that above the threshold thickness relatively strong and isotropic vortex pinning is realized in BZO-doped YBCO films. Generally, this paper demonstrates that especially for thin film applications on NiW substrates even more compatible buffer layer structures should be utilized.     

Effects of Mn doping on BaTiO3 thin films grown on highly oriented pyrolytic graphite substrates

We report multiferroelectric properties of Mn-doped BaTiO₃ (MBTO) thin films on highly oriented pyrolytic graphite (HOPG) substrates. The MBTO thin films were grown on the HOPG substrate by pulse laser deposition. For comparison purpose, undoped BaTiO₃ (BTO) thin films were also prepared under same experimental conditions. The BTO and MBTO thin films were polycrystalline, indicating that the MBTO thin film has better crystallinity than the BTO thin film. The leakage current of the MBTO thin film was reduced due to the Mn doping substitution. In addition, the MBTO thin film exhibited better than the BTO thin film in ferroelectric and magnetic behaviors. We suggest that the Mn doping bring about the improvements of ferroelectric and ferromagnetic properties of the BTO thin films. Based on atomic force microscopy (AFM) and conducting AFM (CAFM) studies, the grain size of MBTO thin film was much larger than that of BTO thin film.     

基于$lt;i$gt;J$lt;/i$gt;积分的颗粒煤岩单轴压缩下裂纹扩展研究

颗粒煤岩是由众多离散的煤岩颗粒组成的固态多层次多结构物质,具有煤岩与颗粒物质的双重性质,其裂纹扩展规律可以从煤岩力学特性和颗粒物质多尺度特性进行研究. 首先,从能量角度对线弹性材料受压破坏,裂纹扩展产生原因进行了阐述,指出线弹性阶段裂纹的扩展动力源自应变能的释放. 然后,通过物理实验和数值试验从宏观和细观两方面对颗粒煤岩受压破裂过程中裂纹扩展做了进一步研究,结果表明:颗粒煤岩完全破裂后,底部会形成一个锥形堆,裂纹的扩展随着煤岩颗粒粒径的减小而减缓,部分裂纹扩展会出现突变点,且裂纹无光滑性;由于煤岩颗粒粒径等引起介质的非均匀性对裂纹扩展有重要的影响,均质度系数越大裂纹起裂时间越晚,声发射能量释放在裂纹扩展的轻度、中度和深度三个不同阶段逐渐变得频繁、剧烈. 研究结果将有利于进一步研究岩土类颗粒材料受压破裂过程的裂纹扩展规律. 关键词： J积分')" href="#">J积分 颗粒煤岩 单轴压缩 裂纹扩展     

Morphological characterization of ITO thin films surfaces

In this study, indium tin oxide (ITO) thin films were deposited by electron beam evaporation method on glass substrates at room temperature, followed by postannealing at 200 and 300 °C for annealing time up to 1 h. Fractal image processing has been applied to describe the surface morphology of ITO thin films from their atomic force microscopy (AFM) images. These topographical images of the ITO thin films indicate changes in morphological behavior of the film. Also, the results suggest that the fractal dimension D can be used to explain the change of the entire grain morphology along the growth direction.     

高强混凝土单轴压缩声发射频率特征试验研究

为研究高强混凝土破裂前声发射信号的频率特征,对C60、C70、C80高强混凝土试件进行单轴压缩下的高、低频双通道声发射试验,得到破裂过程的力学参数和声发射参数,探求高强混凝土不同加载阶段声发射信号频率的分布特征。研究表明,三种高强混凝土在峰值应力前,高、低频通道声发射信号均集中在特定的频段内;临近峰值应力时,高、低频通道的声发射信号频率向低频段移动,同时优势频段内的频率趋于分散,这可作为预测高强混凝土破坏的前兆信息。     

Grain size and its distribution in NiTi thin films sputter-deposited on heated substrates

Grain size and its distribution in NiTi thin films sputter-deposited on a heated substrate have been investigated using the small angle x-ray scattering technique. The crystalline particles have a small size and are distributed over a small range of sizes for the films grown at substrate temperatures 370 and 420℃. The results show that the sizes of crystalline particles are about the same. From the x-ray diffraction profiles, the sizes of crystalline particles obtained were 2.40nm and 2.81nm at substrate temperatures of 350 and 420℃, respectively. The morphology of NiTi thin films deposited at different substrate temperatures has been studied by atomic force microscopy. The root mean square roughness calculated for the film deposited at ambient temperature and 420℃ are 1.42 and 2.75nm, respectively.     

附着铜膜的内应力及屈服强度

用X-射线衍射和热循环基片弯曲方法测量了附着在基体上纯铜膜的内应力和屈服强度。内应力为张应力且随工作气体（氩气）压强的增加而减小但随膜厚的增加而增加。钢基体上铜膜的张屈服强度与膜厚的倒数成反比。压屈服强度也同样依赖于膜厚，即膜越薄，压屈服强度越高。     

Growth and characterization of thin ZnO films deposited on glass substrates by electrodeposition technique

Electrodeposition technique was used in order to produce nanometric zinc oxide films on glass insulating substrates. The effect of electrolyte concentration and applied current density on the formation and growth of electrodeposited Zn thin films in aqueous solutions of ZnSO₄ were studied. After a thermal oxidation, a characterization of the structural morphology of the films deposited was carried out by optical microscopy (OM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and by grazing incidence X-rays diffraction (GIXD). These characterization techniques show that the grains size of the films after oxidation at temperature 450 °C is between 5 and 15 nm, as well as the structure is polycrystalline nature with several orientations. UV/vis spectrophotometry confirms that it is possible to obtain transparent good ZnO films with an average transmittance of approximately 80% within the visible wavelength region, as well as the optical gap of obtained ZnO films is 3.17 eV.     

不同基底的GaN纳米薄膜制备及其场发射增强研究

采用脉冲激光沉积 (PLD) 方法在Si及SiC基底上制备了相同厚度的GaN纳米薄膜并对其进行了微结构表征及场发射性能测试分析. 结果表明: 基底对于GaN薄膜微结构及场发射性能具有显著的影响. 在SiC基底上所制备的GaN纳米薄膜相对于Si基底上的GaN纳米薄膜, 其场发射性能得到显著提升, 其场发射电流可以数量级增大. 场发射显著增强应源于纳米晶微结构及取向极化诱导增强效应. 本研究结果表明, 要获得优异性能场发射薄膜, 合适基底及薄膜晶体微结构需要重点考虑. 关键词： 基底 GaN 纳米薄膜 场发射     

Properties of Eu-doped zinc oxide thin films grown on glass substrates by radio-frequency magnetron sputtering

Eu-doped ZnO (EZO) thin films were prepared on glass substrates at various growth temperatures by radio-frequency magnetron sputtering. The properties of deposited thin films showed a significant dependence on the growth temperature. The preferential growth orientation of all the thin films was occurred along the ZnO (002) plane. The maximum crystallite size and the minimum average transmittance in the wavelength range of 450–1100 nm were observed for the EZO thin film deposited at 25 °C. A red shift of the optical band gap was observed in the growth temperature range of 25–300 °C. The highest figure of merit, an index for evaluating the performance of transparent conducting thin films, was obtained at 200 °C of growth temperature. These results indicated that the high-quality EZO film was obtained at a growth temperature of 200 °C.     

Orientation dependence of structural transition in fcc Al driven under uniaxial compression by atomistic simulations

By molecular dynamics simulations employing an embedded atom method potential,we have investigated structural transformations in single crystal Al caused by uniaxial strain loading along the [001],[011] and [111] directions. We find that the structural transition is strongly dependent on the crystal orientations. The entire structure phase transition only occurs when loading along the [001] direction,and the increased amplitude of temperature for [001] loading is evidently lower than that for other orientations. The morphology evolutions of the structural transition for [011] and [111] loadings are analysed in detail. The results indicate that only 20% of atoms transit to the hcp phase for [011] and [111] loadings,and the appearance of the hcp phase is due to the partial dislocation moving forward on {111} fcc family. For [011] loading,the hcp phase grows to form laminar morphology in four planes,which belong to the {111} fcc family; while for [111] loading,the hcp phase grows into a laminar structure in three planes,which belong to the {111} fcc family except for the (111) plane. In addition,the phase transition is evaluated by using the radial distribution functions.     

Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

We investigated ferroelectric characteristics of BiFeO₃ (BFO) thin films on SrRuO₃ (SRO)/yttria-stabilized zirconia (YSZ)/glass substrates grown by pulsed laser deposition. YSZ buffer layers were employed to grow highly crystallized BFO thin films as well as SRO bottom electrodes on glass substrates. The BFO thin films exhibited good ferroelectric properties with a remanent polarization of 2P_r = 59.6 μC/cm² and fast switching behavior within about 125 ns. Piezoelectric force microscopy (PFM) study revealed that the BFO thin films have much smaller mosaic ferroelectric domain patterns than epitaxial BFO thin films on Nb:SrTiO₃ substrates. Presumably these small domain widths which originated from smaller domain energy give rise to the faster electrical switching behavior in comparison with the epitaxial BFO thin films on Nb:SrTiO₃ substrates.     

硅油基底表面铁薄膜的生长机理及表面有序结构

利用直流溅射方法在液体基底(硅油)表面成功制备出金属铁薄膜系统，研究了其生长机理及特征的表面有序结构.实验发现铁薄膜的生长过程与液相基底表面非磁性金属薄膜的情况类似，基本服从二阶段生长模型.连续铁薄膜中可观测到尺寸巨大的圆盘形有序结构，其生长演化与溅射功率、沉积时间和真空环境中的生长时间等实验条件密切相关.实验证明，此类有序结构是在薄膜内应力作用下，铁原子及原子团簇在液体表面自由扩散迁移，并最终在硅油基底表面某些区域成核凝聚所致.在较大溅射功率和沉积时间条件下，圆盘外部区域的铁薄膜中形成周期分布的波纹褶皱，其波长约为10 μm，波峰基本与圆盘的边界平行.进一步研究表明：在沉积过程中，由于沉积铁原子的局域能量作用，导致硅油的表面层结构发生改变而形成一聚合物层；在随后的冷却过程中，聚合物层的强烈收缩使铁薄膜处于很大的压应力场中，促使薄膜起皱形成波纹结构. 关键词： 液体基底 铁薄膜 生长机理 有序结构     

Growth of ultra-thin TiO2 films by spray pyrolysis on different substrates

In the present study TiO₂ films were deposited by spray pyrolysis method onto ITO covered glass and Si (1 0 0) substrates. The spray solution containing titanium(IV) isopropoxide, acetylacetone and ethanol was sprayed at a substrate temperature of 450 °C employing 1-125 spray pulses (1 s spray and 30 s pause). According to AFM, continuous coverage of ITO and Si substrates with TiO₂ layer is formed by 5-10 and below 5 spray pulses, respectively. XPS studies revealed that TiO₂ film growth on Si substrate using up to 4 spray pulses follows 2D or layer-by-layer-growth. Above 4 spray pulses, 3D or island growth becomes dominant irrespective of the substrate. Only 50 spray pulses result in TiO₂ layer with the thickness more than XPS measurement escape depth as any signal from the substrate could not be detected. TiO₂ grain size remains 30 nm on ITO and increases from 10-20 nm to 50-100 nm on Si substrate with the number of spray pulses from 1 to 125.     

In-plane magnetization with high coercivity in terbium iron garnet thin films deposited on Pt/Si substrate by PLD

We report on the growth of terbium iron garnet (TbIG, Tb₃Fe₅O₁₂) thin films having anomalously large coercivity and in-plane easy axis of magnetization. The TbIG thin films were prepared at room temperature (RT) on Pt/Si(1 0 0) substrates by pulsed laser deposition technique. The films deposited at RT were X-ray amorphous and do not show any magnetic order. Annealing of the RT deposited film at 900 °C resulted into fully textured (532) TbIG film. Atomic force microscopy and cross-sectional scanning electron microscopy studies of the TbIG films showed good surface quality with an average surface roughness of 5.0 nm and thickness of about 300 nm, respectively. The M-H loops measured at 20 K for TbIG films, exhibit about an order of magnitude enhancement in the coercivity value (H_c) than the single crystal. In-plane and out-of-plane M-H loops revealed that the easy axis of the magnetization lies within the film’s plane. In-plane magnetization combining with large H_c value of the TbIG thin film may be of scientific interest for the possible applications.     

Study on tribological behavior and cutting performance of CVD diamond and DLC films on Co-cemented tungsten carbide substrates

The tribological behaviors of diamond and diamond-like carbon (DLC) films play a major role on their machining and mechanical applications. In this study, diamond and diamond-like carbon (DLC) films are deposited on the cobalt cemented tungsten carbide (WC-Co) substrate respectively adopting the hot filament chemical vapor deposition (HFCVD) technique and the vacuum arc discharge with a graphite cathode, and their friction properties are evaluated on a reciprocating ball-on-plate tribometer with counterfaces of silicon nitride (Si₃N₄) ceramic, cemented tungsten carbide (WC) and ball-bearing steel materials, under the ambient air without lubricating condition. Moreover, to evaluate their cutting performance, comparative turning tests are conducted using the uncoated WC-Co and as-fabricated CVD diamond and DLC coated inserts, with glass fiber reinforced plastics (GFRP) composite materials as the workpiece. The as-deposited HFCVD diamond and DLC films are characterized with energy-dispersive X-ray spectroscopy (EDX), scanning electron microscope (SEM), X-ray diffraction spectroscopy (XRD), Raman spectroscopy and 3D surface topography based on white-light interferometry. Furthermore, Rocwell C indentation tests are conducted to evaluate the adhesion of HFCVD diamond and DLC films grown onto WC-Co substrates. SEM and 3D surface topography based on white-light interferometry are also used to investigate the worn region on the surfaces of diamond and DLC films. The friction tests suggest that the obtained friction coefficient curves that of various contacts exhibit similar evolution tendency. For a given counterface, DLC films present lower stable friction coefficients than HFCVD diamond films under the same sliding conditions. The cutting tests results indicate that flank wear of the HFCVD diamond coated insert is lower than that of DLC coated insert before diamond films peeling off.     

FexNi100−x nanometric films deposited by laser ablation on SiO2/Si substrates

Fe_xNi_100−x nanometric films were deposited on SiO₂/Si substrates at room temperature using the pulsed laser deposition technique. The targets were Fe-Ni amorphous magnetic foils with composition Fe₅₀Ni₅₀, Fe₃₅Ni₆₅ and Fe₂₂Ni₇₈. Morphological and structural properties of the deposited films were investigated using scanning electron microscopy, Rutherford backscattering spectrometry, grazing incidence X-ray diffraction, and X-ray reflectivity. Electrical and magnetic characteristics of the films were investigated by using the four-point probe and the magneto-optic Kerr effect techniques, respectively. The film properties are strictly dependent on the Fe-Ni compositional ratio.     

In situ observation and analysis of multiple cracking phenomena in thin glass layers deposited on polymer films

The multiple cracking phenomena in thin SiO_x films deposited on 12 μm-thick polyethylene terephthalate (PET) substrates during the tensile test are investigated. Thicknesses of SiO_x films ranged from 43 to 320 nm. The multiple cracking progress is observed in situ by optical microscopy and from which the crack density in SiO_x films is measured. The predicted crack density by the shear lag analysis including residual strains, explains reasonably well the experimental results. The critical energy release rate, G_c, for the first film cracking is also evaluated from simple energy balance arguments. Although it depends on the analytical model, G_c is estimated to be a constant value of about 1.0 J/m² regardless of the thickness.     

Influence of the crystal orientation on the electrical properties of AlN thin films on LTCC substrates

In this study, the influence of the crystal orientation on the electrical properties of sputter deposited aluminium nitride (AlN) thin films on low temperature co-fired ceramics (LTCC) substrates is investigated. The degree of c-axis orientation can be tailored by the deposition conditions such as plasma power, gas pressure and gas composition in the deposition chamber. Due to the large surface roughness of LTCC substrates (R_a = ∼0.4 μm) the quality of thin films is lower compared to silicon. Between areas of columnar grains arranged perpendicular to the LTCC surface, defects like voids are generated due to the wavy surface characteristics. The impact of crystal orientation and temperature up to 400 °C on the electrical performance is evaluated, as these layers are targeted as potential candidates for dielectric heat spreaders on multilayered ceramic substrates for high frequency applications. These AlN thin films having a good c-axis orientation exhibit lower leakage current levels over the complete temperature range compared to those with a poor alignment with respect to this crystallographic plane. The leakage current behaviour, however, is dominated according to the Pool-Frenkel electron emission independent of the degree of c-axis orientation.     

Epitaxial perovskite oxide thin films on Ba(Ti,Zr)O3 substrates for strain-induced electric/magnetic property changes near room temperature

We have reported the epitaxial growth and the electric/magnetic properties of SrRuO₃ and (La_0.67Sr_0.33)MnO₃ thin films on Ba(Ti_0.925Zr_0.075)O₃ substrates. The dielectric constant and thermal expansion of Ba(Ti_0.925Zr_0.075)O₃ exhibited hysteretic jumps at the structural transition temperatures. Near the rhombohedral to orthorhombic structural transition temperature of Ba(Ti_0.925Zr_0.075)O₃, which occurs at ∼33 °C, we have observed a drastic jump of resistivity and magnetization of the thin films. These results suggest that epitaxial perovskite oxide thin films on Ba(Ti_0.925Zr_0.075)O₃ substrates should be quite useful for the strain-induced changes of physical properties near room temperature.