Neutral and charged excitons in a quantum tube

The optical transition energies of neutral and charged excitons in a quantum tube are calculated as a function of the Aharonov-Bohm magnetic flux Φ. The oscillation amplitude of the ground state energy of the electron-hole relative motion is shown to be larger in a quantum tube than a quantum ring with strong confinement in the axis direction. We find a double maxima structure in the optical transition energy for a quantum tube with radius R = 0.5 in units of the effective Bohr radius because of the difference in the Φ dependencies between the single electron energy and the relative-motion energy of a charged exciton state.     

基于磁圆二向色谱的单层MoS_2激子能量和线宽温度依赖特性

以二硫化钼(MoS_2)为代表的过渡金属硫属化物属于二维层状材料,样品可以薄至单层.单层MoS_2是一种直接带隙半导体,在纳米逻辑器件、高速光电探测、纳米激光等领域具有广阔的应用前景.在实际应用中,温度是影响半导体材料能带结构和性质的主要因素之一.因此研究单层二维材料能带的温度依赖特性对理解其物理机理以及开展器件应用具有重要的意义.目前,在广泛采用的测量单层MoS_2反射谱的研究中,激子峰往往叠加在一个很强的光谱背底上,难以准确分辨激子的峰位和线宽.基于自行搭建的显微磁圆二向色谱系统,研究了单层MoS_2在65—300 K温度范围内的反射谱和磁圆二向色谱,结果表明磁圆二向色谱在研究单层材料激子能量和线宽方面具有明显的优势.通过分析变温的磁圆二向色谱,得到了不同温度下的A,B激子的跃迁能量和线宽.通过对激子能量和线宽的温度依赖关系进行拟合,进一步讨论了声子散射对激子线宽的影响.     

Hydrostatic pressure and temperature effects of an exciton-donor complex in quantum dots

Using the matrix diagonalization method and the compact density-matrix approach, we studied the combined effects of hydrostatic pressure and temperature on the electronic and optical properties of an exciton-donor complex in a disc-shaped quantum dot. We have calculated the binding energy and the oscillator strength of the intersubband transition from the ground state into the first excited state as a function of the dot radius. Based on the computed energies and wave functions, the linear, third-order nonlinear and total optical absorption coefficients as well as the refractive index have been examined. We find that the ground state binding energy and the oscillator strength are strongly affected by the quantum dot radius, hydrostatic pressure and temperature. The results also show that the linear, third-order nonlinear and total absorption coefficients and refractive index changes strongly depend on temperature and hydrostatic pressure.     

Evolution of electronic structure in Eu1−xLaxFe2As2

We report an angle-resolved photoemission spectroscopy study of electronic structures of Eu_1−xLa_xFe₂As₂ single crystals, in which the spin density wave transition is suppressed with La doping. In the paramagnetic state, the Fermi surface maps are similar for all dopings, with chemical potential shifts corresponding to the extra electrons introduced by the La doping. In the spin density wave state, we identify electronic structure signatures that relate to the spin density wave transition. Bands around M show that the energy of the system is saved by the band shifts towards high energies, and the shifts decrease with increasing doping, in agreement with the weakened magnetic order.     

Photoluminescence of charged magneto-excitons in InAs single quantum dots

We calculated the photoluminescence spectra of charged magneto-excitons in single two-dimensional parabolic quantum dots, using an unrestricted Hartree–Fock method. The calculated luminescence spectra explain well the observed red shifts of transition energies of InAs/GaAs single quantum dot by additional electron capture in a dot. The magnetic-field-induced transition of the ground state configuration of trapped electrons causes drastic change in the photoluminescence spectra. The dependence of photoluminescence intensities of charged excitons on the excess energies of photogenerated carriers above the bulk GaAs energy gap is studied phenomenologically, by calculating the steady state electron population probability in a dot.     

Optical spectroscopy of GaAsGaAlAs quantum wells under an external electric field

We have studied by means of low temperature photoluminescence (PL) and photocurrent spectroscopy the effects of an external electric field on the excitons in GaAs quantum wells confined between GaAlAs. Increasing the field causes a Stark shift of the excitons toward lower energies with a simultaneous quenching in the PL intensity. At moderate fields, we find very good agreement (better than 0.5 meV) between the light- and heavy-hole exciton energies obtained by PL and photocurrent measurements. A significant deviation in energy of the PL relative to the photocurrent is observed at high fields, manifesting the increase in the contributions of impurity-bound excitons to the PL lineshape. A detailed PL study of the Stark shift as a function of well thickness has also been performed. The results show an increasing Stark shift with increasing well thickness, amounting to 110 meV for a 230 Å-wide well at a field of 10⁵ V/cm. For very wide wells (∼ 1000 Å) the behavior of bulk GaAs is recovered: the excitons become ionized before large Stark shifts can be observed. Variational calculations have been carried out and shown to account for the experimental observations of both the Stark shift and the quenching of the PL. In this light, we will discuss the mechanisms governing the optical properties of quantum wells under an external electric field.     

Effect of capping layer of GaAlAs on the electronic and optical properties of GaAs spherical layer quantum dot

In the framework of effective-mass envelope function theory, we present a theoretical investigation of the electronic and optical properties for a system of nano layer consisting of spherical nano layer of GaAs (core) with capping layer of GaAlAs (shell). An exact analytical solution of the corresponding Schrödinger equation is obtained; in addition to that a transcendent equation for determination of electron energetic spectrum is derived as well. Dependences of the electron energy, threshold frequency and absorption coefficient versus the external radius, and the thickness of the capping layer are presented. The results showed that the electronic and the optical properties strongly depended on the thickness of the capping layer. We expect that such systems may be significant for practical application.     

Thermally induced band hybridization in bilayer-bilayer MoS_2/WS_2 heterostructure

Transition metal dichalcogenides(TMDs), being valley selectively, are an ideal system hosting excitons. Stacking TMDs together to form heterostructure offers an exciting platform to engineer new optical and electronic properties in solid-state systems. However, due to the limited accuracy and repetitiveness of sample preparation, the effects of interlayer coupling on the electronic and excitonic properties have not been systematically investigated. In this report, we study the photoluminescence spectra of bilayer-bilayer MoS_2/WS_2 heterostructure with a type Ⅱ band alignment. We demonstrate that thermal annealing can increase interlayer coupling in the van der Waals heterostructures, and after thermally induced band hybridization such heterostructure behaves more like an artificial new solid, rather than just the combination of two individual TMD components. We also carry out experimental and theoretical studies of the electric controllable direct and indirect infrared interlayer excitons in such system. Our study reveals the impact of interlayer coupling on interlayer excitons and will shed light on the understanding and engineering of layer-controlled spin-valley configuration in twisted van der Waals heterostructures.     

A detailed investigation of the electronic properties of a multi-layer spherical quantum dot with a parabolic confinement

In this work, we aim a detailed investigation of the electronic properties of a spherical multi-layer quantum dot with and without a hydrogenic impurity. The structure is introduced in the form of core/shell/well/shell layers. The core and well layers are defined by the parabolic electronic potentials. We carry out the effect of the core radius and layer thickness on the energy levels, their wave functions, binding energies of the impurity and the probability distributions. In order to determine the sublevel eigenvalues and eigenfunctions, the Schrödinger equation is solved full numerically by shooting method in the frame of the effective mass approximation. The results are analyzed in detail as a function of the layer thicknesses and their probable physical reasons are tried to be explained. It is found that the electronic properties and impurity binding energies are strongly depending on the layer thicknesses.     

Hydrostatic pressure and temperature effects on the electronic energy levels of a spherical quantum dot placed at the center of a nano-wire

The effect of pressure and temperature on the electronic structure of an InAs spherical quantum dot located at the center of a GaAs cylindrical nano-wire have been determined using finite element method, within the effective mass approximation. The energy levels and transition energies are numerically calculated as a function of the dot radius, pressure and temperature. It is shown that the pressure and temperature effects are significant and should be considered in the study of low-dimensional semiconducting systems. The results show that; energy levels (i) decrease as the dot radius increases (ii) decrease as the pressure increases and (iii) increase as the temperature increases. For very small dot radii, the energy levels show unusual behavior, such that the energy levels increase as the pressure increases. We also found that the transition energy (i) increases as the dot size decreases (ii) increases as the pressure increases and (iii) decreases as the temperature increases.     

Modulation spectroscopy under uniaxial stress

During the past several years the combination of modulation spectroscopy and static uniaxial stress has been developed into a powerful tool for the investigation of the relationship between the optical properties of semiconductors and their electronic energy bands. Studies of the stress-induced splittings and shifts of energy levels and oscillator strengths as well as the dependence of the induced fine structure on polarization direction and strain configuration have produced a wealth of information concerning the intrinsic properties of the undeformed crystal such as symmetries of interband optical transitions, deformation potentials, spin-exchange interaction of excitons, etc. Symmetry assignments are of considerable value for comparison with band structure calculations while the latter parameters are of significance for comparison with theories based on model calculations and systematic trends such as ionicity. This paper will review experiments and theories dealing with the effects of static uniaxial stress on those optical properties of semiconductors related to the intrinsic properties of the material with special emphasis on the modulated optical spectra.     

电场下GaAs/Ga1-xAlxAs量子阱中的子带和激子

本文利用有限势垒模型,研究电场对GaAs/Ga_1-xAl_xAs量子阱中子带和激子的影响。对阱宽为105?的GaAs/Ga_0.66Al_0.34As量子阱,电场由0—1.2×10⁵V/cm,我们计算了电子和空穴的子带以及激子的结合能。基于上述计算结果,所得电子-空穴重叠函数和激子峰的能量移动与实验测量符合得较好。 关键词：     

Exciton localization behaviour in different well width undoped GaN/Al0.07Ga0.93N nanostructures

We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al_0.07Ga_0.93N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers (excitons) is demonstrated by the “S-shape” dependences of the PL peak energies on the temperature. The time-resolved PL spectra of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak profile, so that the PL process at low temperatures is a free electron-localized hole transition.     

CdSe/CdS核/壳型纳米晶的光谱特性

以巯基乙酸为稳定剂制备了CdSe/CdS核／壳型纳米晶。用光吸收谱（Abs)、光致发光谱（PL）及光致发光激发谱（PLE）研究了CdS壳层对CdSe纳米晶电子结构，从而对其吸收和发光性能的影响。根据PL和PLE的结果以及带边激子精细结构的计算结果，我们用尺寸很小的纳米晶中所形成的基激缔合物解释了PL光谱与吸收边之间较大的Stokes位移。     

On the binding energies of excitons in polar quantum well structures in a weak electric field

The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.     

Electron–phonon interaction in CdS/ZnS quantum dot

Electron–phonon effects on the two first electronic states in both CdS and GaAs quantum dots are investigated. Both confined longitudinal optical (LO) and surface optical (SO) phonons are considered. We use the intermediate-type variational approach. We find that, shifts caused by phonon contribution on electronic energies are more significant for CdS quantum dot. We find, also, that, contrary to GaAs based quantum dots, we shouldn’t neglect the SO phonon contribution for CdS based ones, especially for small dots.     

双层石墨烯吸附碱金属原子的第一性原理研究

基于密度泛函的第一性原理方法,研究了Li、Na、K和Rb碱金属原子吸附在双层石墨烯(BLG)表面的吸附能、迁移行为、电子性能.研究发现,Li和Na原子在BLG表面吸附易形成团簇,K和Rb原子能够分散吸附.碱金属原子在BLG表面的扩散能垒随原子半径的增加而减小.碱金属原子吸附使电子部分转移至BLG,使体系Fermi能级贯穿导带,表现出金属性.电荷密度差和电荷转移的分析表明,Li、Na、K和Rb与BLG表面以离子键结合.     

Low-dimensional systems: Quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems

This review is concerned with quantum confinement effects in low-dimensional semiconductor systems. The emphasis is on the optical properties, including luminescence, of nanometre-sized microcrystallites, also referred to as zerodimensional systems. There is some discussion on certain of the two-dimensional systems, such as thin films and layer structures. The increase in energy of excitation peaks (blue shift) as the radius R of a microcrystallite is reduced is treated theoretically, and experimental data when they are available are used to assess the reliability of the different models that have been used. These experiments normally make use of microcrystallites dispersed in a large-bandgap matrix such as glass, rocksalt, polymers, zeolites or liquids. Exciton binding energies E b are larger than for bulk semiconductors, and oscillator strengths are higher for the microcrystallites. The regimes of direct interest are as follows. Firstly there is the so-called weak-confinement regime where R is greater than the bulk exciton Bohr radius a B . Experimentally, semiconductors such as CuCl with a B , 7 Å, are suitable for study in this case. Secondly there is the moderate-confinement regime, where R , a B , and a h < R < a e , a h and a e being the hole and electron Bohr radii, respectively. Finally there is the strong-confinement regime, with R < a B , and R < a h , a e . For this case we are concerned with a ladder of discrete energy levels, as in molecular systems, rather than energy bands. The electrons and holes are treated as independent particles, and for excited states we refer to electron-hole pairs rather than excitons. Suitable materials for investigation in this regime are the II-VI semiconductors, and also GaAs and Ge, for which a B is relatively large. Although a number of different theoretical models have been used, none can be described as completely first-principles calculations, and there is room for improvement on this aspect. However, useful expressions have been developed by Brus and by Lippens and Lannoo, giving the energy of excited states as a function of R , in terms of the bulk energy gap, kinetic energy, Coulomb energy and correlation energy. Other phenomena discussed are firstly biexciton formation by the use of high intensity laser beams and secondly nonlinear optical effects. Strong nonlinearities and short decay times for excited states have been predicted, and the models developed cover both the resonant and the non-resonant cases. The possibility of using microcrystallites embedded at reasonable concentrations in a glass matrix in the field of optical communications and optical switching is also considered.     

Third and fourth optical transitions in semiconducting carbon nanotubes

We have studied the optical transition energies of single-wall carbon nanotubes over broad diameter (0.7-2.3 nm) and energy (1.26-2.71 eV) ranges, using their radial breathing mode Raman spectra. We establish the diameter and chiral angle dependence of the poorly studied third and fourth optical transitions in semiconducting tubes. Comparative analysis between the higher lying transitions and the first and second transitions show two different diameter scalings. Quantum mechanical calculations explain the result showing strongly bound excitons in the first and second transitions and a delocalized electron wave function in the third transition.     

Size-dependent electronic and optical properties of an exciton in CdSe/CdS/CdSe/CdS multilayer spherical quantum dot

The electronic and optical properties of a single exciton in a CdSe/CdS/CdSe/CdS quantum dot is studied by using effective mass approximation with parabolic confinement. The Coloumbic interaction between electron and hole is included by Hartree potential. A self-consistent technique is used to calculate the energy eigenvalue and wavefunction of exciton. Based on this approximation we investigate the effect of core size, shell thickness, well width on exciton binding energy, absorption spectra, and oscillator strength. The results provide the tuning possibility of electronic and optical properties of multilayer quantum dot with layer thickness.