Low-temperature thermoluminescence study of GaSe:Mn layered single crystals

Mangan doped GaSe single crystals have been studied by thermoluminescence measurements performed with various heating rates between 0.4 and 1.0 K/s in the temperature range of 10?300 K. Thermoluminescence spectra exhibited four distinguishable peaks having maximum temperatures at 47, 102, 139 and 191 K revealing the existence of trapping levels in the crystals. Curve fitting and initial rise methods were applied to observed peaks to determine the activation energies of four trapping levels. Capture cross-sections of each level were also evaluated using the obtained energy values. Moreover, heating rate dependencies of the obtained peaks were investigated. It was shown that increase in the heating rate resulted in the decrease in thermoluminescence intensity and shift of the peak maximum temperatures to higher values. Discrete, single trap behaviour was established for acceptor level related with the peak at 191 K by analysing the sequentially obtained peaks with different stopping temperatures between 15 and 65 K.     

Optical and defect properties of S-doped and Al-doped GaSe crystals

S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence(PL) and Fourier transform infrared spectroscopy(FT-IR). The micro-topography of(0001) face of these samples was observed by using scanning electron microscope(SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the S_(Se)~0 or Al_(Ga)~(+1) substitutional defects in the layer GaSe structure, and the positive center of Al_(Ga)~(+1) could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.     

Thermally stimulated current measurements in as-grown TlGaSeS layered single crystals

Charge carrier traps in as-grown TlGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TlGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 × 10⁻²⁶ cm² and 2.0 × 10¹⁴ cm⁻³, respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution.     

Electrical properties of molybdenite single crystals

Molybdenite crystals used in the present work were grown by direct vapour transport or sublimation method. The electrical resistivities and I-V characteristics were measured at different temperatures in the symmetry plane. The room temperature resistance of a specimen annealed for different periods has also been measured. These results are described and discussed.     

Sub-nanometer precision modification of the optical properties of three-dimensional polymer-based photonic crystals

We present a convenient post-fabrication technique to precisely tune the optical properties of polymer-based three-dimensional photonic crystals with sub-nanometer precision. Conventional air-plasma etching is utilized to modify the filling fraction of direct laser written polymer photonic crystals beyond the wavelength-imposed limits. Tuning of the optical properties is monitored in transmission and reflection spectroscopy. A simple model for the etching process is proposed and found to be in good agreement with the experimental observations.     

Optical properties of Tl2In2Se3S layered single crystals

The optical properties of Tl₂In₂Se₃S layered single crystals have been analyzed using transmission and reflection measurements in the wavelength region between 500 and 1100 nm. The optical indirect transitions with a band gap energy of 1.96 eV and direct transitions with a band gap energy of 2.16 eV were determined from analysis of absorption data at room temperature. Dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters – oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index – were found to be 4.67 eV, 45.35 eV, 1.38 × 10¹⁴ m ^{? 2} and 3.27, respectively. Transmission measurements were also performed in the temperature range 10–300 K. As a result of temperature-dependent transmission measurements, the rate of change in the indirect band gap with temperature, i.e. γ = ?5.6 × 10^?4 eV/K, and the absolute zero value of the band gap energy, E _gi(0) = 2.09 eV, were obtained.     

Effect of pressure on optical and electrical properties of tungsten diselenide single crystals

Optical absorption spectra of tungsten diselenide (WSe₂) single crystals subjected to different values of pressure (0, 2, 4 and 6 GPa) were obtained in the spectral range 700–1450 nm with the help of a UV–VIS–NIR spectrophotometer. The spectra were thoroughly analyzed in the absorption edge region for obtaining direct as well as indirect band gaps in this material. The high temperature resistivity and thermoelectric power on WSe₂ single crystals at various pressures were also studied. The results and their implications are discussed in the article.     

Age-induced oxide on cleaved surface of layered GaSe single crystals

It is shown that a long-term keeping of a layered gallium monoselenide at room temperature results in formation of the intrinsic oxide at a cleaved surface of semiconductor. It is found that the chemical compositions of the intrinsic oxide at the surfaces of the intentionally undoped and doped samples of GaSe are different. The electrical properties of the GaSe-intrinsic oxide system are presented. It is established that intrinsic oxide films at the surface of GaSe are characterized by current instability with N-type current-voltage characteristic. The influence of relative humidity on changes of capacitance and surface resistivity of the intrinsic oxide is also discussed.     

Optical properties of Tm-doped GaSe single crystals

Optical properties of Tm-doped GaSe single crystals were investigated by measurements of optical absorption and photoluminescence. The single crystals were grown by the Bridgman technique. The X-ray diffraction analysis revealed that the single crystals were in the ε-type GaSe phase. The optical absorption spectra showed a sharp absorption peak at 582 nm near the band edge, which is due to direct free exciton. The temperature dependence of the energy of the exciton absorption peak was well fitted by the Varshni relation. In the photoluminescence spectrum at 10 K, we observed a very weak emission peak at 586 nm, a relatively strong emission peak centered at 613 nm, and several sharp and narrow emission peaks in the 790-840 nm region. The two emission peaks at 586 and 613 nm were associated with intrinsic emission lines due to direct free exciton and indirect bound exciton. The emission peaks in the 790-840 nm region, which were related to extrinsic emission, were assigned as due to the ³F₄→³H₆ transition of Tm³⁺ ions with a low symmetry of D₃ in the host lattice.     

Space-charge-limited currents and photoconductive properties of Tl2InGaSe4 layered crystals

The extrinsic electronic parameters of Tl₂InGaSe₄ layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current–voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8–7.7) × 10¹⁰ cm^?3. Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres.     

Optical properties of GaSe: Mn single crystals

To identify the manganese related defect levels in GaSe, GaSe:Mn single crystals were grown with various Mn dopant levels using the Bridgman technique and the photoconductivity and photoluminescence properties were investigated. Peaks introduced by the manganese related defects were observed at 1.916 and 1.724 eV in the photoconductivity spectra and at 1.804 eV in the photoluminescence spectra at 80 K. These results allow the calculation of the energies of the A₁ and A₂ centers at 0.348 and 0.156 eV, respectively, above the valence band and a donor level at 0.112 eV below the conduction band. Also, we find that the A₁ and A₂ centers are pinned within the conduction band from measurements of the temperature dependence of the photoconductivity spectra.     

Influence of dielectric boundaries,angle of incidence,and polarization of light on the optical properties of chiral photonic crystals

Oblique transmission of light through a planar layer of a chiral photonic crystal is considered. The problem is solved by the Ambartsumian layer addition method. The peculiarities of spectra of the polarization-plane rotation and the polarization ellipticity, as well as the features of proper polarizations are studied in the presence of dielectric boundaries.     

Temperature-dependent optical properties of wurtzite InN

Optical properties and carrier recombination dynamics of a series of InN epilayers, with varying free electron concentrations, grown by molecular beam epitaxy were studied by steady-state photoluminescence (PL) and time-resolved differential transmission spectroscopy. At room temperature strong PL around 0.7 eV was observed. Temperature-dependent PL measurements show a redshift of the peak energy and a linear increase of the emission linewidth with temperature. Furthermore, our results demonstrate that room temperature carrier lifetimes are inversely proportional to the free electron concentrations for theses samples. Carrier lifetime as long as 1.3 ns was observed in the best quality sample, indicating a highly improved crystalline quality.     

光子晶体可调谐滤波特性的理论研究

用特征矩阵法研究了带缺陷的一维光子晶体的透射性质，并提出了新的可调谐光滤波器的概念.一维光子晶体(L1H1)m带有Lc-H2(L2H2)n形式的缺陷时，在光子晶体中间出现了窄的透射峰，其他级次的干涉峰则随着覆盖层H2(L2H2)n周期数的增大而减弱并消失.当耦合层Lc厚度变化时，在光子晶体禁带边缘附近出现两个高透射率区域.高透射率区域透射峰的特性由光子晶体和覆盖层的性质决定.当光子晶体禁带宽度较小时，两个高透射率区域接近，形成具有约150nm调谐范围的区域，因此可制备以一维光子晶体为基础的新型可调谐光滤波器. 关键词： 光子晶体 可调谐光滤波器 特征矩阵     

Optical properties of chiral photonic crystals with an anisotropic defect layer

Properties of defect modes in chiral photonic crystals with an anisotropic defect are considered. The influence of the defect layer thickness, its location in the crystal and orientation of its optical axis, as well as of the chiral photonic crystal thickness on the properties of defect modes is studied. It is shown that at certain values of the defect layer thickness the medium loses its main property, namely, the polarization dependence of the diffraction reflection. At certain thicknesses of the defect layer this system transforms from the source of the right circular polarization into the source of the left circular polarization, if the layer position in the chiral photonic crystal changes.     

Optical properties and radiation effects in layered crystals of (CnH2n+nNH3)2MCl4: n = 1, 2, 3; M = Cd,Cu, Mn

Abstract

A new absorption band has been found at 5.10 eV in (C _n H_{2n + 1}NH₃)₂CdCl₄: n = 1, 2, 3 in addition to the absorption bands of CdCl₂ whose electronic structure resembles the former crystals. The energy of the additional peak shifts with temperature by as much as 0.38 eV from 5.10eV at room temperature (RT) to 5.48 eV at liquid nitrogen temperature. This large peak shift is attributed to a structural phase transition between these two temperatures. A new type of electron center has been found in these crystals (M = Cd, Mn; n = 1, 2, 3) irradiated with X-rays at 15 K in addition to the Cl₂ ^?. This shows optical absorption bands (IR bands) in the infrared region of 10 ～ 20 kcm ^?1. The IR bands are assigned to an electron center where an electron is trapped at an ammonium site in the neighborhood of a Cl^? vacancy.     

Tunable electronic and optical properties of GaS/GaSe van der Waals heterostructure

We have used first-principles calculations to investigate the electronic and optical properties of GaS/GaSe van der Waals heterostructures formed by stacking two-dimensional GaSe and GaSe monolayers. Our findings confirm that the GaS/GaSe heterostructures transform from an indirect to a direct band gap material for the two stackings considered in this study. In addition, we found that the direct band gaps are 1.780 eV and 1.736 eV for AA and AB stacking, respectively. It is observed that the behavior of the optical properties of AA stacking is similar to AB stacking with some differences in details and both heterostructures located in UV range. The refractive index values are 2.21 (AA pattern) and 2.18 (AB pattern) at zero photon energy limit and increase to 2.937 for AA and 2.18 AB patterns and both located in the visible region. More importantly, the GaS/GaSe heterostructures have a variety of extraordinary electronic and optical properties. Accordingly, these heterostructures can be useful for the solar cell, nanoelectronics, and optoelectronic applications.     

Uniaxial stress dependence of the dielectric properties of barium titanate single crystals

BaTiO₃ single crystals were grown by the melt-grown method. The effect of uniaxial pressure (0–1700 bar) on the dielectric properties of these crystals has been systematically studied. The external stress showed obvious effects on these properties. An increase in the difference between the Curie T_c and Curie–Weiss T₀ temperatures induced by the applied pressure is observed. This could be ascribed to the inducing of non-ferroelectric cubic islands in the tetragonal phase by the applied compressive stress. On the other hand, the pressure behavior of thermal hysteresis and the ??/?T vs. T plot strongly suggests that the phase transition changes to second-order type with increasing pressure. The Curie–Weiss constant obtained from a modified Curie–Weiss law strongly decreases with increasing pressure, suggesting that the mechanism of phase transition is going to order–disorder type. An increase in the difference between the Curie T_c and Burn's T_B temperatures with increasing pressure is observed. This could be ascribed to the narrowing of the temperature range on which the Curie–Weiss law is valid. In general, the obtained results are in good agreement with hydrostatic pressure data. Some kind of relaxation near T_c, which is strongly coupled with strain caused by applied compressive stress, is postulated.     

Electronic and optical properties of pure and Ce3+-doped CaS single crystals: a first-principles prediction

This paper investigates the electronic and optical properties for pure and Ce 3+-doped CaS crystals by using the first-principles total energy calculations.The results show that CaS:Ce has a direct band gap of 2.16 eV,and the top of the valence band is determined by S 3p states and the bottom of the conduction band is determined by Ce 4f states,respectively.Our results validate that the yellow emission from CaS:Ce is produced by doped cerium and the green emission quenches at 12.5% cerium concentration.The Ce-S bond shows more covalent character than the Ca-S bond.