Protective films of diamond for high Tc superconducting detectors

Deposition of diamond like carbon (DLC) films on YBCO superconducting detectors is reported. The method is to make a DLC film by C⁺ implantation and XeCl excimer laser irradiation. The implantation energy is 20–35 keV and C⁺ implantation dosages D=1×10¹⁴–5×10¹⁸ ions/cm². The parameters of XeCl excimer laser ablation are: wavelength, 308 nm; energy density, 20–50 mJ/cm²; and width of pulse, 45 ns. The superconductivity of C⁺-implanted YBCO is also investigated, while the damage behavior of C⁺ implantation and the mechanism of coating DLC are analyzed.     

Carbon nitride films by RF plasma assisted PLD: Spectroscopic and electronic analysis

Carbon nitride (CNx) thin films have been grown on Si 〈1 0 0〉 by 193 nm ArF ns pulsed laser ablation of a pure graphite target in a low pressure atmosphere of a RF generated N₂ plasma and compared with samples grown by PLD in pure nitrogen atmosphere. Composition, structure and bonding of the deposited materials have been evaluated by X-ray photoelectron spectroscopy (XPS), and Raman scattering. Significant chemical and micro-structural changes have been registered, associated to different nitrogen incorporation in the two types of films analyzed. The intensity of the reactive activated species is, indeed, increased by the presence of the bias confined RF plasma, as compared to the bare nitrogen atmosphere, thus resulting in a different nitrogen uptake in the growing films. The process has been also investigated by some preliminary optical emission studies of the carbon plume expanding in the nitrogen atmosphere. Optical emission spectroscopy reveals the presence of many excited species like C⁺ ions, C atoms, C₂, N₂; and CN radicals, and N₂⁺ molecular ions, whose relative intensity appears to be increased in the presence of the RF plasma. The films were also characterised for electrical properties by the “four-probe-test method” determining sheet resistivity and correlating surface conductivity with chemical composition.     

Optical and Electrical Properties Evolution of Diamond-Like Carbon Thin Films with Deposition Temperature

Optical and electrical properties of diamond-like carbon （DLC） films deposited by pulsed laser ablation of graphite target at different substrate temperatures are reported. By varying the deposition temperature from 400 to 25℃, the film optical transparency and electrical resistivity increase severely. Most importantly, the transparency and resistivity properties of the DLC films can be tailored to approaching diamond by adjusting the deposition temperature, which is critical to many applications. DLC films deposited at low temperatures show excellent optical transmittance and high resistivity. Over the same temperature regime an increase of the spa bonded C content is observed using visible Raman spectroscopy, which is responsible for the enhanced transparency and resistivity properties.     

Nanocrystalline growth and diagnostics of TiC and TiB2 hard coatings by pulsed laser deposition

Nanocrystalline coatings of TiC and TiB₂ were grown by pulsed laser deposition on Si(100) and on X155 steel at low substrate temperatures ranging from 40 °C to 650 °C. A pulsed KrF excimer laser was used with the deposition chamber at a base pressure of 10^-6 mbar. The morphology and structure of the films, studied with SEM, XRD, and TEM, showed that nanocrystalline films with a fine morphology of TiC and TiB₂ were deposited with a grain size of 10 nm-70 nm at all substrate temperatures. The growth of the polycrystalline coatings possessed a columnar morphology with a 𘜄¢ preferred orientation. The hardness of the coatings was determined to be 40 GPa and the elastic modulus, 240 GPa. The composition and the kinetics of the plume produced during the pulsed laser deposition of TiC and TiB₂ was studied under film growth conditions. The mass analysis of ions of the ejected material was performed by time-of-flight mass spectroscopy (TOF-MS) and showed the presence of Ti⁺ and C⁺ during TiC ablation and B⁺, B₂⁺, and Ti⁺ during TiB₂ ablation. The kinetic energies (KE) of the ions depended on the laser fluence which was between 0.5 eV and 340 eV. The kinetic energy and the evolution of the plasma was studied with a streak camera. The velocity of the plasma was of the order of 10⁶ cm/sec and was linearly dependent on the energy fluence of the laser. The emission spectroscopy of the plasma plume confirmed the atomic neutral and single excited species of Ti. These results show that coating growth basically occurs by the recombination of the ionic species at the surface of the substrate.     

Diamond-like phase formation in an amorphous carbon films prepared by periodic pulsed laser deposition and laser irradiation method

Diamond-like carbon (DLC) films were fabricated by pulsed laser ablation of a liquid target. During deposition process the growing films were exited by a laser beam irradiation. The films were deposited onto the fused silica using 248 nm KrF eximer laser at room temperature and 10⁻³ mbar pressure. Film irradiation was carried out by the same KrF laser operating periodically between the deposition and excitation regimes. Deposited DLC films were characterized by Raman scattering spectroscopy. The results obtained suggested that laser irradiation intensity has noticeable influence on the structure and hybridization of carbon atoms deposited. For materials deposited at moderate irradiation intensities a very high and sharp peak appeared at 1332 cm⁻¹, characteristic of diamond crystals. At higher irradiation intensities the graphitization of the amorphous films was observed. Thus, at optimal energy density the individual sp³-hybridized carbon phase was deposited inside the amorphous carbon structure. Surface morphology for DLC has been analyzed using atomic force microscopy (AFM) indicating that more regular diamond cluster formation at optimal additional laser illumination conditions (∼20 mJ per impulse) is possible.     

Shadowgraphic and emission imaging spectroscopic studies of the laser ablation of graphite in an Ar gas atmosphere

Laser ablation of graphite in an Ar atmosphere at 560 Torr was done using a nanosecond-pulse Nd:YAG laser (1064 nm) at a fluence of 12 J/cm². Dynamics in the ejection of carbon species and in their confinement near the graphite surface (<1 mm) due to their numerous collisions with Ar atoms were investigated by shadowgraphy, emission imaging, and emission spectroscopy at delay times of 0.01-100 7s following the laser irradiation. A shock wave was generated, and temporally and spatially dependent emissions from Ar⁺ and Ar were observed in addition to those from carbon species (C, C⁺, and C₂) and the Bremsstrahlung radiation from a hot plasma. We suggest that the dissipation of the kinetic and thermal energies of the carbon species, their backward motion, and their collisions with each other lead to the formation of clusters and particles through the interaction with Ar atoms.     

Nanosecond and femtosecond ablation of La0.6Ca0.4CoO3: a comparison between plume dynamics and composition of the films

Thin films of La_0.6Ca_0.4CoO₃ were grown by pulsed laser ablation with nanosecond and femtosecond pulses. The films deposited with femtosecond pulses (248 nm, 500 fs pulse duration) exhibit a higher surface roughness and deficiency in the cobalt content compared to the films deposited with nanosecond pulses (248 nm, 20 ns pulse duration). The origin of these pronounced differences between the films grown by ns and fs ablation has been studied in detail by time-resolved optical emission spectroscopy and imaging. The plumes generated by nanosecond and femtosecond ablation were analyzed in vacuum and in a background pressure of 60 Pa of oxygen. The ns-induced plume in vacuum exhibits a spherical shape, while for femtosecond ablation the plume is more elongated along the expansion direction, but with similar velocities for ns and fs laser ablation. In the case of ablation in the background gas similar velocities of the plume species are observed for fs and ns laser ablation. The different film compositions are therefore not related to different kinetic energies and different distributions of various species in the plasma plume which has been identified as the origin of the deficiency of species for other materials.     

Control of structure and electric properties of amorphous organic semiconductive thin films prepared by excimer laser ablation

Excimer laser ablation (ELA) of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) with ArF (193 nm), KrF (248 nm), XeCl (308 nm), and XeF (351 nm) beams under optimized conditions enables us to obtain organic semiconductor thin films with various structures such as amorphous carbon, polyperinaphthalene (PPN), and PTCDA itself. Electric conductivity and carrier species of the films depend strongly on the ablation wavelength, fluence, substrate temperature, and ambient vapor species. It is found that electric conductivities of the films are controllable, ranging from 10^-6 to 10¹ S cm^-1 with the selection of appropriate ablation conditions. An organic pn junction is successfully constructed by the change of ablation conditions during ELA. Furthermore, ELA of PTCDA at 248 nm in iodine vapor leads to formation of tetraiodoallene in the film.     

Critical role of laser wavelength on carbon films grown by PLD of graphite

The structure of thin films deposited by pulsed laser ablation (PLD) is strongly dependent on experimental conditions, like laser wavelength and fluence, substrate temperature and pressure. Depending on these parameters we obtained various kinds of carbon materials varying from dense, mainly tetrahedral amorphous carbon (ta-C), to less compact vertically oriented graphene nano-particles. Thin carbon films were grown by PLD on n-Si 〈100〉 substrates, at temperatures ranging from RT to 800°C, from a rotating graphite target operating in vacuum. The laser ablation of the graphite target was performed by a UV pulsed ArF excimer laser (λ=193 nm) and a pulsed Nd:YAG laser, operating in the near IR (λ=1064 nm). The film structure and texturing, characterised by X-ray diffraction analysis, performed at grazing incidence (GI-XRD), and the film density, evaluated by X-ray reflectivity measurements, are strongly affected both by laser wavelength and fluence and by substrate temperature. Micro-Raman and GI-XRD analysis established the progressive formation of aromatic clusters and cluster condensation into vertically oriented nano-sized graphene structures as a direct function of increasing laser wavelength and deposition temperature. The film density, negatively affected by substrate temperature and laser wavelength and fluence, in turn, results in a porous bulk configuration and a high macroscopic surface roughness as shown by SEM characterisation. These structural property modifications induce a relevant variation also on the emission properties of carbon nano-structures, as evidenced by field emission measurements. This work is dedicated to our friend Giorgio who passed away 20th August.     

Background gas collisional effects on expanding fs and ns laser ablation plumes

The collisional effects of a background gas on expanding ultrafast and short pulse laser ablation plumes were investigated by varying background pressure from vacuum to atmospheric pressure levels. For producing Cu ablation plumes, either 40 fs, 800 nm pulses from a Ti: Sapphire laser or 6 ns, 1,064 nm pulses from a Nd:YAG laser were used. The role of background pressure on plume hydrodynamics, spectral emission features, absolute line intensities, signal to background ratios and ablation craters was studied. Though the signal intensities were found to be maximum near to atmospheric pressure levels, the optimum signal to background ratios are observed ~20–50 Torr for both ns and fs laser ablation plumes. The differences in laser–target and laser–plasma couplings between ns and fs lasers were found to be more engraved in the crater morphologies and plasma hydrodynamic expansion features.     

XeCl（308nm）脉冲准分子激光淀积类金刚石薄膜

利用ＸｅＣｌ（３０８ｎｍ）脉冲准分子激光淀积技术在功率密度５×１０８Ｗ／ｃｍ２、室温、真空度１０－３Ｐａ的条件下，制备出不含氢成分的类金刚石薄膜，研究了类金刚石薄膜的特性及其随制备工艺条件的变化规律。研究了激光诱导的碳等离子体发射光谱，探讨了类金刚石薄膜的形成机理。     

Zinc oxide nanostructures grown by pulsed laser deposition

We report the use of PLD to grow different ZnO nanostructures. Very different film morphologies have been observed using different laser wavelengths to ablate the target. The influence of substrate temperature and oxygen background pressure on the film morphology has been investigated too. Smooth and rough films, hexagonal pyramids and columns have been obtained by using a KrF excimer laser (248 nm) for the target ablation, while hexagonal hierarchical structures and pencils have been obtained by using ArF (193 nm). Photoluminescence and X-ray diffraction measurements revealed the good quality of the samples, in particular of those deposited using the ArF laser beam.     

Electrical and optical properties of indium tin oxide thin films grown by pulsed laser deposition

Indium tin oxide (ITO) thin films (200-400 nm in thickness) have been grown by pulsed laser deposition (PLD) on glass substrates without a post-deposition anneal. The electrical and optical properties of these films have been investigated as a function of substrate temperature and oxygen partial pressure during deposition. Films were deposited at substrate temperatures ranging from room temperature to 300 °C in O₂ partial pressures ranging from 0.1 to 100 mTorr. For 300 nm thick ITO films grown at room temperature in oxygen pressure of 10 mTorr, the electrical conductivity was 2.6᎒^-3 Q^-1cm^-1 and the average optical transmittance was 83% in the visible range (400-700 nm). For 300 nm thick ITO films deposited at 300 °C in 10 mTorr of oxygen, the conductivity was 5.2᎒^-3 Q^-1cm^-1 and the average transmittance in the visible range was 87%. Atomic force microscopy (AFM) measurements showed that the RMS surface roughness for the ITO films grown at room temperature was ~7 Å, which is the lowest reported value for the ITO films grown by any film growth technique at room temperature.     

Growth of carbon nanotubes on Fe or Ni-coated Si substrate by feeding with carbon from a graphite ablation plume

By feeding with carbon clusters from the ArF excimer laser (=193 nm) ablation of graphite target, carbon nanotubes (CNTs) were grown on Fe and Ni films deposited on SiO₂/Si substrates, which were set inside a quartz tube with Ar gas pressure of 500 Torr operating at 1100 °C. Optical emission spectroscopic observation of the ablation plume of graphite and Ni/Y catalyst was performed in the Ar gas for a pressure range of 0–600 Torr at room temperature and 1000 °C. The emission band intensity of C₃ (ù_u) at the distance of 2 mm from the target increased with increasing Ar gas pressure. PACS 79.20.Ds; 81.07.De; 39.30.+w     

A comparison of the electron component within laser-ablated titanium plumes formed by UV and visible lasers

A Langmuir probe was used as a diagnostic of the temporally evolving electron number densities within a low-temperature laser-ablated titanium plasma expanding in vacuum. Measurements were made following ablation by a KrF excimer laser (248 nm, F=30 ns) and a frequency-doubled Nd:YAG laser (532 nm, F=7.5 ns) for laser power densities between 85 MW cm^-2 and 1130 MW cm^-2 on target. Electron number density data were obtained from the saturation electron current region of the probe (I/V) characteristic. Peak electron number densities in the range 1.5᎒¹⁰ cm^-3 to 1.5᎒¹³ cm^-3 were measured, at a distance of 5 cm along the target normal, for the laser power range investigated. Above ablation threshold the temporally integrated electron flux increased linearly with incident power density for both ablation wavelengths. The ablation thresholds, in terms of peak power density within the laser spot on the target, were found to be 85ᆨ MW cm^-2 for KrF ablation and 300ᇆ MW cm^-2for 2P YAG ablation.     

Study of the plasmas produced during the deposition of TiC/SiC thin films in a hybrid magnetron-laser system

Time- and spatially-resolved optical emission spectroscopy was performed to characterize the plasma produced in a hybrid magnetron-sputtering-laser deposition system, which is used for TiC or SiC thin films preparation. A graphite target was ablated by a KrF excimer laser (λ=248 nm,τ=20 ns) and either Ti or Si targets were used for DC magnetron sputtering in argon ambient. Spectra were measured in the range 250–850 nm. The evolution of the spectra with varying magnetron powers (0–100 W) and argon pressures (0.3–10 Pa) was studied. Spectra of the plasmas produced by a) the magnetron alone, b) the ablation laser alone, and c) the magnetron and the ablation laser together, were recorded. Spectra (a) were dominated by Ar atoms and Ar⁺ ions. Emission lines of Ti and Si were detected, when Ti target and Si target was used, respectively. Spectra (b) revealed emission of C, C⁺, C₂, Ar, Ar⁺. Spectra (c) showed presence of all previously mentioned species and further of Ti⁺ ions emission was detected. The research was supported by Grant Agency of the Czech Republic No. 202/06/02161, GA ASCR project number A1010110/01 and Institutional Research Plan AV CR No. AV0Z 10100522.     

Synthesis of DLC films by PLD from liquid target and dependence of film properties on the synthesis conditions

DLC (Diamond-like carbon films) were prepared by pulsed laser ablation of a liquid target at substrate temperatures from 18 to 600°C using 248 nm KrF excimer laser. The sp³ hybridization state carbon formation was additionally promoted by gaseous H₂O₂ flow through the reaction chamber and substrate excitation by the same laser beam. Deposited DLC films were characterised by Raman scattering spectroscopy and atomic force microscopy (AFM). Comparative AFM and Raman study shows that the increase in the content of sp³ type bonding in DLC is in correlation with the increase of the surface roughness of the samples prepared.     

Electrical and piezoresistive properties of ion beam deposited DLC films

In present study diamond like carbon (DLC) films were deposited by closed drift ion source from the acetylene gas. The electrical and piezoresistive properties of ion beam synthesized DLC films were investigated. Diode-like current–voltage characteristics were observed both for DLC/nSi and DLC/pSi heterostructures. This fact was explained by high density of the irradiation-induced defects at the DLC/Si interface. Ohmic conductivity was observed for DLC/nSi heterostructure and metal/DLC/metal structure at low electric fields. At higher electric fields forward current transport was explained by Schottky emission and Poole–Frenkel emission for the DLC/nSi heterostructures and by Schottky emission and/or space charge limited currents for the DLC/pSi heterostructures. Strong dependence of the diamond like carbon film resistivity on temperature has been observed. Variable range hopping current transport mechanism at low electric field was revealed. Diamond like carbon piezoresistive elements with a gauge factor in 12–19 range were fabricated.     

Short-pulse laser deposition of diamond-like carbon thin films

The high intensities present in and the non-thermal nature of ultrashort-pulse laser ablation provide a nearly ideal source for thin-film deposition. The high kinetic energies and high ion content in the ablation plume suggest that it would be useful for the creation of diamond thin films. We used a 120 fs, 3 W, 1 kHz laser to ablate a graphite target and characterized the resulting films. We were able to grow amorphous films of up to 18 7m thick and free from graphite particulates with no annealing necessary and at rates up to 25 7m/hr. The films had 40-50% sp³ bonds as measured by using EELS and had properties typical of PLD-generated diamond-like carbon films.     

Diagnostics of laser-produced plume under carbon nanotube growth conditions

This paper presents diagnostic data obtained from the plume of a graphite composite target during carbon nanotube production by the double-pulse laser oven method. The in situ emission spectrum (300 to 650 nm) is recorded at different locations upstream of the target and at different delay times from the lasers (IR and green). Spectral features are identified as emissions from C₂ (Swan System: d³@_g-a³@_u) and C₃ (Comet Head System: A¹@_u-X¹D_u⁺). Experimental spectra are compared with computed spectra to estimate vibrational temperatures of excited state C₂ in the range of 2500 to 4000 K. The temporal evolution of the 510-nm band of C₂ is monitored for two target positions in various locations, which shows confinement of the plume in the inner tube and increase in plume velocity with temperature. The excitation spectra of C₂ are obtained by using a dye laser to pump the (0,1) transition of the Swan System and collecting the laser-induced fluorescence signal from C₂. These are used to obtain "ground-state" rotational and vibrational temperatures which are close to the oven temperature. Images of the plume are also collected and are compared with the spectral measurements.