Structural, electrical, and surface characteristics of La0.5Sr0.5CoO3 thin films prepared by pulsed-laser deposition

A parametric study of the growth of La_0.5Sr_0.5CoO₃ (LSCO) thin films on (100) MgO substrates by pulsed-laser deposition (PLD) is reported. Films are grown under a wide range of substrate temperature (450–800 °C), oxygen pressure (0.1–0.9 mbar), and incident laser fluence (0.8–2.6 J/cm²). The optimum ranges of temperature, oxygen pressure, and laser fluence to produce c-axis oriented films with smooth surface morphology and high metallic conductivity are identified. Films deposited at low temperature (500 °C) and post-annealed in situ at higher temperatures (600–800 °C) are also investigated with respect to their structure, surface morphology, and electrical conductivity. Received: 20 November 1998 / Accepted: 6 July 1999 / Published online: 21 October 1999     

The effect of substrate material on the properties of tantalum oxide films

The effect of substrate material on the electrical characteristics of Ta _x O _y films produced by high-frequency magnetron sputtering of a tantalum oxide target is studied. The effect of oxygen plasma on leakage currents, dielectric permittivity, and dielectric dissipation factor of thin (300–400 nm) Ta _x O _y layers is found. It is proposed to process tantalum oxide films in oxygen plasma to control their electrical and dielectric properties.     

Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition

Ba(Zr_0.05Ti_0.95)O₃ (BZT) thin films grown on Pt/Ti/SiO₂/Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results showed that the random oriented BZT thin film grown on Pt/Ti/SiO₂/Si(1 0 0) substrate with a perovskite phase. The SEM surface image showed that the BZT thin film was crack-free. And the average grain size and thickness of the BZT film are 35 and 400 nm, respectively. Furthermore, the chemical states and chemical composition of the films were determined by X-ray photoelectron spectroscopy (XPS) near the surface. The XPS results show that Ba, Ti, and Zr exist mainly in the forms of BZT perovskite structure.     

Electrosynthesis of TiO2 oxide film on ITO substrate and electrochemical comparative study of the oxide with its hydrated gel

Thin TiO₂ films obtained by cathodic electrosynthesis from an acidic aqueous bath containing TiOSO₄, H₂O₂ and KNO₃ on conductive glass indium tin oxide have been physically and electrochemically characterised. Secondary ion mass spectroscopy profile of the crystallised gel after heat treatment at 400 °C shows the presence of TiO₂ with traces of TiO and oxygen. X-ray patterns confirm the presence of anatase nanocrystallites for the annealed film and an amorphous structure for the non-annealed gel. Scattering electron microscopy surface micrographies reveal an opened porous nanostructure of the deposits. Cyclic voltammetry and impedance spectroscopic measurements reveal the different behaviour of the films obtained before and after the annealing, showing an important electrical activity of the non-annealed films. The dependence of capacitance values with potential in the anodic domain of depletion is obviously remarked from impedance plots for both gel and crystal forms of the film, which confirmed the fact that films obtained in this way have n-type properties. The potential of flat band equals −0.6 V/Ag/AgCl in pH range of 6.5 has been estimated according to Mott–Shottky curves for the crystallised oxide; meanwhile, the Mott–Shottky curve for the hydrated gel was nonlinear.     

Effects of ion-doping at different sites on multiferroic properties of BiFeO3 thin films

A-site Ce and B-site Zr codoped Bi_1−x Ce _x Fe_1−y Zr _y O₃ (BCFZ) thin films with different compositions were successfully prepared on the Pt/Ti/SiO₂/Si substrates by chemical solution deposition. The influence of the A-site Ce and B-site Zr codoping on the structure, surface morphology, electrical and magnetic properties of BFO films were investigated, respectively. The comparative study suggested that the A-site Ce doping with various contents have notable influences on the electrical properties of the BFO films, while the B-site Zr doping with different contents affect mainly the magnetic properties of the BFO films. Compared with the other BCFZ films studied here, the Bi_0.97Ce_0.03Fe_0.97Zr_0.03O₃ film showed the lowest dielectric loss and leakage current density, a well-squared P–E loop and fatigue-free characteristics as well as the strong magnetization.     

Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering

CdIn₂O₄ thin films were prepared by direct-current (DC) reactive magnetron sputtering. The structure, surface morphology and the chemical composition of the thin films were analyzed by X-ray diffraction (XRD), atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The electrical properties of the films prepared in different oxygen concentration and annealing treatment were determined, and the effects of the preparing conditions on the structure and electrical properties were also explored. It indicates that the CdIn₂O₄ thin films with uniform and dense surface morphology contain mainly CdIn₂O₄, In₂O₃ phases, and CdO phase is also observed. The XPS analysis confirms the films are in oxygen-deficient state. The electrical properties of these films significantly depend on the preparing conditions, the resistivity of the films with the oxygen concentration of 4.29% is 2.95 × 10⁻⁴ Ω cm and the Hall mobility is as high as 60.32 cm²/V s. Annealing treatment can improve the electrical performance of the films.     

Effects of texture on the dielectric properties of Ba(Zr0.2Ti0.8)O3 thin films prepared by pulsed laser deposition

Ba(Zr_0.2Ti_0.8)O₃ (BZT) thin films were deposited on Pt(111)/Ti/SiO₂/Si(100) substrates by a pulsed laser deposition process. The BZT thin films directly grown on annealed and un-annealed Pt/Ti/SiO₂/Si substrates exhibited random and high (100) orientations, respectively. The dielectric constant of a 400-nm-thick BZT film with (100) orientation was 331, which was higher than that of a BZT film with random orientation (∼236). This result is attributed to the fact that the polar axis of the (100)-oriented films was more tilted away from the normal to the film surface than that of the randomly oriented films. Also, the tunabilities of BZT thin films with random and (100) orientations were ∼50% and ∼59% at an applied field of 400 kV/cm, respectively. Improved tunability has been attributed to the (100) texture of the film leading to an enhancement of the in-plane-oriented polar axis. PACS 77.22.-d; 77.55.+f; 77.80.-e; 77.84.-s     

Synthesis and characterization of electron beam evaporated LiCoO<Subscript>2</Subscript> thin films

LiCoO₂ thin films were prepared by electron beam evaporation technique using LiCoO₂ target with Li/Co ratio 1.1 in an oxygen partial pressure of 5 × 10⁻⁴ mbar. The films prepared at substrate temperature T _s < 573 K were amorphous in nature, and the films prepared at T _s > 573 K exhibited well defined (104), (101), and (003) peaks among which the (104) orientation predominates. The X-ray photoelectron spectroscopy (XPS) and inductively coupled plasma (ICP) data revealed that the films prepared in the substrate temperature range 673–773 K are nearly stoichiometric. The grain size increases with an increase of substrate temperature. The Co–e_g absorption bands, are empty and their peak position lies at around 1.7 eV above the top to the Co–t_2g bands. The fundamental absorption edge was observed at 2.32 eV. The films annealed at 1,023 K in a controlled oxygen environment exhibit (104) out plane texture with large grains. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006     

Application of MEH-PPV/SnO<Subscript>2</Subscript> bilayer as hybrid solar cell

The effects of oxygen content in the sputtering gas on the crystallographic and optoelectronic properties of 210 nm-thick Zr–doped In₂O₃ (Zr–In₂O₃) films by rf magnetron sputtering were initially studied. The results of X-ray diffraction show that the Zr–In₂O₃ films grown on glass substrates exhibit mixed crystallographic orientations. Moreover, the Zr–In₂O₃ film grown in an Ar atmosphere promotes the appearance of crystallographic orientation of (222). The surface of the Zr–In₂O₃ film becomes rougher as the oxygen content in the sputtering gas decreases; the current images obtained by conductive atomic force microscopy reveal that the surfaces of the Zr–In₂O₃ films exhibit a distribution of coexisting conducting and nonconducting regions, and that the area of the nonconducting surface increases with the oxygen content in the sputtering gas. The resistivity is minimized to 3.51×10⁻⁴ Ω cm when the Zr–In₂O₃ film is grown in an Ar atmosphere and the average transmittance in the visible light region is ∼85%. The optical band gap decreases as the oxygen content in the sputtering gas increases.     

Determination of the optimal parameters for the fabrication of ZnO thin films prepared by spray pyrolysis method

In this work, ZnO thin films have been prepared by spray pyrolysis deposition method on the glass substrates. The effect of deposition parameters, such as deposition rate, substrate temperature and solution volume has been studied by X-ray diffraction (XRD) method, UV–Vis–NIR spectroscopy, scanning electron microscopy (SEM), and electrical measurements. The XRD patterns indicate polycrystalline wurtzite structure with preferred direction along (0 0 2) planes. Thin films have transparency around 90% in the visible range. The optical band gap was determined at 3.27 eV which did not change significantly. Evolution of electrical results containing the carriers’ density, sheet resistance and resistivity are in agreement with structural results. All the results suggest the best deposition parameters are: deposition rate, R = 3 ml/min, substrate temperature, T _s = 450°C and thickness of the thin films t = 110–130 nm.     

Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates

To improve the electrical properties of as-deposited BZ1T9 ferroelectric thin films, the supercritical carbon dioxide fluid (SCF) process were used by a low temperature treatment. In this study, the BZ1T9 ferroelectric thin films were post-treated by SCF process which mixed with propyl alcohol and pure H₂O. After SCF process treatment, the remnant polarization increased in hysteresis curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. Additionally, the improvement qualities of as-deposited BZ1T9 thin films after SCF process treatment were carried out XPS, C–V, and J–E measurements.     

Structural and optical properties of Ba(Zn1/3Ta2/3)O3 thin films deposited by pulsed laser deposition

Ba(Zn_1/3Ta_2/3)O₃, (BZT), is a high-k and low loss dielectric resonator material which finds applications in the area of microwave communication and related areas. While there are reports on its bulk properties, there is hardly any report on its thin films. We report here preparation of thin films of BZT deposited on to borosilicate and quartz substrates using the pulsed laser deposition (PLD) technique under different oxygen mixing percentage (OMP) and preliminary studies on their structural and optical properties. The EDAX spectra show that the deposited films exhibit the composition of the target. As-deposited films, whether on a glass or quartz substrate, were found to be amorphous. The refractive index and energy bandgap of the films were found to be around 1.5 in the dispersion free region (500–1500 nm) and 5.2–5.5 eV, respectively. The Dynamic Force Microscopy (DFM) study of the BZT films exhibited columnar growth and films deposited at higher OMPs showed the smaller grain size.     

The influence of lithium excess in the target on the properties and compositions of Li<Subscript>1+<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript>2</Subscript>O<Subscript>4−<Emphasis Type="Italic">δ</Emphasis></Subscript> thin films prepared by PLD

Li–Mn–O thin films were deposited by pulsed laser deposition (PLD) onto stainless steel substrates using targets containing different concentrations of added Li₂O. The influence of the target composition on the stoichiometry of the resulting thin films, the surface morphology and the electrochemical properties was studied. The application of the target with added 7.5 mol% Li₂O results in an almost ideal lithium content, while all films were still oxygen deficient. The thin films were applied as electrodes in Li//Li_1+x Mn₂O_4−δ cells (i.e. model cells for a rechargeable Li-ion battery) and characterized by cyclic voltammetry and galvanostatic charge/discharge experiments. The electrochemical measurements of the thin films confirmed that the thin films can serve as good model systems and that they show a sufficient cyclability.     

Nanoscale modification of Ni/Al interfaces by low-energy $\mathrm{O}_{2}^{+}$ reactive ion beam mixing

The kinetics of growth, composition and electronic structure of thin oxide films formed by reactive ion beam mixing (IBM) of Ni/Al interfaces bombarded with low-energy (3-keV) O₂⁺\mathrm{O}_{2}^{+} ions have been studied at room temperature using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and factor analysis. Initially, NiO species are formed but, later, with increasing ion dose, Ni–Al mixed oxide species appear due to Al incorporation in the near-surface region. These changes are accompanied by a slight increase of the oxygen concentration and a decrease of the Ni/Al ratio in the thin oxide films formed. Angle-resolved X-ray photoelectron spectroscopy shows that Ni–Al mixed oxide species are located nearer the surface than NiO species. Experimental results have been compared with Monte Carlo TRIDYN simulations, suggesting that processes driven by residual defects or the reaction with oxygen predominate over pure ballistic mechanisms during reactive IBM of Ni/Al interfaces.     

PLD and RF-PLD synthesis of Ba<Subscript>0.6</Subscript>Sr<Subscript>0.4</Subscript>TiO<Subscript>3</Subscript> ferroelectric thin films for electrically controlled devices

Ba_0.6Sr_0.4TiO₃ (BST) bulk ceramic synthesized by solid state reaction was used as target for thin films grown by pulsed laser deposition (PLD) and radiofrequency beam assisted PLD (RF-PLD). The X-ray diffraction patterns indicate that the films exhibit a polycrystalline cubic structure with a distorted unit cell. Scanning Electron Microscopy investigations showed a columnar microstructure with size of spherical grains up to 150 nm. The capacitance–voltage (C–V) characteristics of the BST films were performed by applying a DC voltage up to 5 V. A value of 280 for dielectric constant and 12.5% electrical tunability of the BST capacitor have been measured at room temperature.     

One-step preparation of N-doped strontium titanate films by pulsed laser deposition

Perovskite-type oxynitrides exhibit promising electrical and optical properties and can possibly be used in the future as functional materials for electrical, photo-, and electrochemical applications. Continuous heterovalent substitution of oxygen ions by nitrogen ions allows tuning of the desired optical and/or electronic properties to the application specifications. In the present work deposition of SrTiO₃:N films by pulsed reactive crossed beam laser ablation was studied in order to examine the influence of different deposition parameters on the film crystallinity and composition. The deposited films exhibit a perovskite-type crystal structure and reveals epitaxial growth on MgO(100) substrates. The unit cell parameters of the deposited SrTiO₃:N films range within , which is slightly larger than for polycrystalline SrTiO₃ (a=3.905). The studied films reveal an oxygen content in the range of (2.70-2.98)±0.15. The relative N content (vs. O) can be tuned within the range of 1.0–3.0% by adjusting the deposition parameters. The N:O concentration ratio increases with increasing laser fluence and target-to-substrate distances, while the substrate temperature has a more complex influence on the nitrogen concentration. In the range of 580–650 °C the [N]/[O] ratio increases while further heating results in a gradual decrease of the N content. PACS  81.15.Fg; 68.55.-a; 81.05.Zx     

Characterization of low pressure chemical vapor deposited polymeric fluorinated carbon m (C:FX)n thin films with low dielectric constant

Thermal chemical vapor deposition of fluorinated carbon thin films in the polymeric form is described by hot filament decomposition of the gaseous C₃F₆O precursor. Decomposition at filament temperatures, ≤450 °C produces films in the ordered (CF₂)_2n polymeric chain structure as in a tetrafluoroethylene polymer. A composite of (CF₂)_2n chains structure and crosslinked m(C:F_x)_n phases are formed in films deposited at filament temperature ≥600 °C. Polymerization of :CF₂ radicals results in (CF₂)_2n chain structure and the crosslinked phase emerges from a separate process involving reaction among the CF₃, CFO and CF₃CO radicals and including CF₂. Substrate temperature affects both the C-to-F bonding configuration and the relative ratio of the composite phases. Dominant C–CF bonding structure in the low (<-5 °C) substrate temperature films is thermally less stable compared to the C–F structure, which dominates the crosslinked structure in films deposited at high (∼70 °C) substrate temperatures. Dielectric properties of the composite films are studied using the electrical equivalent model and a correlation with the C-to-F bond structure is established. High polymeric (CF₂)_2n phase determines the electrical impedance and the dielectric constant of the film, and the crosslinked phase imparts structural stability. PACS 81.15.Gh; 73.61.Ph; 77.84.Jd; 79.60.Fr     

Effect of O2 gas partial pressure on structures and dielectric characteristics of rf sputtered ZrO2 thin films

Amorphous and polycrystalline zirconium oxide thin films have been deposited by reactive rf magnetron sputtering in a mixed argon/oxygen or pure oxygen atmosphere with no intentional heating of the substrate. The films were characterized by high-resolution transmission electron microscopy (HR-TEM), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and capacitance versus voltage (C-V) measurements to investigate the variation of structure, surface morphology, thickness of SiO₂-like interfacial layer as well as dielectric characteristics with different oxygen partial pressures. The films deposited at low oxygen partial pressures (less than 15%) are amorphous and dense with a smooth surface. In contrast, the films prepared at an oxygen partial pressure higher than 73% are crystallized with the microstructure changing from the mixture of monoclinic and tetragonal phases to a single monoclinic structure. The film structural transition is believed to be consequences of decrease in the oxygen vacancy concentration in the film and of increase of the energetically neutral particles in the plasma due to an increased oxygen partial pressure. SE measurements showed that significant interfacial SiO₂ growth has taken place above approximately 51%. The best C-V results in terms of relative dielectric constant values are obtained for thin films prepared at an oxygen partial pressure of 15%.     

Hybrid ICP/sputter deposition of TiC/CaO nanocomposite films for biomedical application

TiC/a-C nanocomposite films doped with CaO have been deposited by means of a hybrid PVD/PACVD technique, which combines dc magnetron sputtering of a TiC_0.5+10% CaO target, with a subsequent high density inductively coupled plasma (ICP) in order to excite and ionize the sputtered species to a high degree. The films were characterized according to their morphology, structure and thickness by scanning electron microscopy, their composition and bonding structure by X-ray photoelectron spectroscopy, and their crystalline properties by X-ray diffraction. The films consist of fcc titanium carbide nanocrystallites with grain sizes of 5–15 nm and an amorphous carbon phase. The average composition is Ti_0.43C_0.35Ca_0.02O_0.15N_0.05. The influence of the ICP plasma power and the bias voltage applied to the substrate on the major film properties has been investigated. A number of such TiC/a-C/CaO nanocomposite films on silicon substrates have been subjected to a 60 day cell test with human osteoblastic cells in order to investigate their suitability for the coating of prostetic implants. The results of these cell tests, some of which turned out to be rather promising, are discussed in terms of film properties such as surface roughness and biaxial stress. PACS 68.55.-a; 81.07.-b; 87.68.+z     

Surface modification of a polyamide 6 film by He/CF4 plasma using atmospheric pressure plasma jet

Polyamide 6 (PA 6) films are treated with helium(He)/CF₄ plasma at atmospheric pressure. The samples are treated at different treatment times. The surface modification of the PA 6 films is evaluated by water contact angle, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The etching rate is used to study the etching effect of He/CF₄ plasma on the PA 6 films. The T-peel strengths of the control and plasma treated films are measured to show the surface adhesion properties of the films. As the treatment time increases, the etching rate decreases steadily, the contact angle decreases initially and then increases, while the T-peel strength increases first and then decreases. AFM analyses show that the surface roughness increases after the plasma treatment. XPS analyses reveal substantial incorporation of fluorine and/or oxygen atoms to the polymer chains on the film surfaces.