Polarized spin transport in mesoscopic quantum rings with electron--phonon and Rashba spin--orbit coupling

The influence of electron--phonon (EP) scattering on spin polarization of current output from a mesoscopic ring with Rashba spin--orbit (SO) interaction is numerically investigated. There are three leads connecting to the ring at different positions; unpolarized current is injected to one of them, and the other two are output channels with different bias voltages. The spin polarization of current in the outgoing leads shows oscillations as a function of EP coupling strength owing to the quantum interference of EP states in the ring region. As temperature increases, the oscillations are evidently suppressed, implying decoherence of the EP states. The simulation shows that the magnitude of polarized current is sensitive to the location of the lead. The polarized current depends on the connecting position of the lead in a complicated way due to the spin-sensitive quantum interference effects caused by different phases accumulated by transmitting electrons with opposite spin states along different paths.     

Spin Polarization and Spin‐Flip Through Phosphorene Superlattice

The spin‐dependent transport properties, including spin polarization and spin‐flip for phosphorene superlattice in the presence of an extrinsic Rashba spin‐orbit interaction (RSOI) based on the transfer matrix method, are studied. The results show that the number of barriers in the superlattice structure plays a dominant role in output spin polarization, which can be used in designing optimized spintronic devices. In addition, by controlling on the Rashba strength, an incident spin‐up electron can be transmitted as a spin‐down electron. Also, it enables to convert the unpolarized incident electronic beam (with zero spin polarization) into an arbitrary output spin polarization, which plays a significant role in qubit circuits.     

Spin splitter regime of a mesoscopic Rashba ring

Using the non-equilibrium Greens' function formalism we calculate the spin currents in a one-dimensional ring coupled to three leads and in the presence of perpendicular magnetic flux Φ and Rashba spin-orbit coupling. A finite bias is applied between the input lead and the other two output leads. We show that the spin-orbit coupling allows one to operate this system as a spin splitter, i.e. the output leads deliver spin-polarized currents with different orientations. We find that the spin splitter operation can be tuned at integer multiples of Φ/Φ₀. Its efficiency depends not only on the value of the Rashba coupling but also on the bias applied between the input and output leads. The selected spin orientation of the output leads can be reversed by a slight change of their contact position. We discuss as well the connection between the spin splitter operation and the spectral properties of the ring.     

Controllable Spin-Polarized Transport in a Three-Terminal Model

By means of the Keldysh Green's function method, we investigate the spin-polarized electron transport in a three-terminal device, which is composed of three normal metal leads and two serially-coupled quantum dots (QDs). The Rashba spin-orbit interaction (RSOI) is also considered in one of the QDs. We show that the spin-polarized charge current with arbitrary spin polarization can be obtained because of the quantum spin interference effect arising from the Rashba spin precession phase, and it can be modulated by the system parameters such as the applied external voltages, the RSOI strength, the QD levels, as well as the dot-lead coupling strengths. Moreover, a fully spin-polarized current or a pure spin current without any accompanying charge current can also be controlled to flow in the system. Our findings indicate that the proposed model can serve as an all-electrical spin device in spintronics field.     

Rashba spin-orbit effect on dwell time of electrons tunneling through semiconductor barrier

A study on characteristics of electrons tunneling through semiconductor barrier is evaluated, in which we take into account the effects of Rashba spin-orbit interaction. Our numerical results show that Rashba spin-orbit effect originating from the inversion asymmetry can give rise to the spin polarization. The spin polarization does not increase linearly but shows obvious resonant features as the strength of Rashba spin-orbit coupling increases, and the amplitudes of spin polarization can reach the highest around the first resonant energy level. Furthermore, it is found that electrons with different spin orientations will spend quite different time through the same heterostructures. The difference of the dwell time between spin-up and spin-down electrons arise from the Rashba spin-orbit coupling. And it is also found that the dwell time will reach its maximum at the first resonant energy level. It can be concluded that, in the time domain, the tunneling processes of the spin-up and spin-down electrons can be separated by modulating the strength of Rashba spin-orbit coupling. Study results indicate that Rashba spin-orbit effect can cause a nature spin filter mechanism in the time domain.     

Quantum Spin Transport in Rashba Spin-Orbit-Coupled Graphene Nanoflakes

We study the spin-resolved transport in a two-terminal graphene nanoflake device with a Rashba spinorbit coupling region in the center of the device. The Green's function method is applied to the system and the spin transmission probability and the spin polarization in x, y, and z directions are calculated. It is found that the components of the spin polarization are antisymmetric functions of Fermi energy, which oscillate and decay to the zero with increasing the energy for all values of the Rashba strength. It is shown that by tuning the Rashba strength via a gate voltage and/or changing the size of the system, it is possible to control the sign and magnitude of the spin polarization. The system represented here is a typical candidate for full electrical spintronic devices based on the carbon materials that are used for spin filtration.     

Spin filtering in a nonuniform quantum wire with Rashba spin-orbit interaction

We investigate theoretically the spin-polarized electron transport for a wide-narrow-wide (WNW) quantum wire under the modulation of Rashba spin-orbit interaction (SOI). The influence of both the structure of the quantum wire and the interference between different pairs of subbands on the spin-polarized electron transport is taken into account simultaneously via the spin-resolved lattice Green function method. It is found that a very large vertical spin-polarized current can be generated by the SOI-induced effective magnetic field at the structure-induced Fano resonance even in the presence of strong disorder. Furthermore, the magnitude of the spin polarization can be tuned by the Rashba SOI strength and structural parameters. Those results may provide an effective way to design a spin filter device without containing any magnetic materials or applying a magnetic field.     

Rashba spin splitting in the Al0.3Ga0.7N/GaN heterostructure under uniaxial strain

By solving the Schrödinger and Poisson equations self-consistently, changes of the Rashba spin splitting for the Al_0.3Ga_0.7N/GaN heterostructure under uniaxial strain are calculated, and electrons are found to take up the first two subbands. The additional polarization induced by the uniaxial strain leads to a great enhancement of the built-in electric field and the 2DEG concentration. The Rashba spin splitting almost increases linearly with the uniaxial strain, and its amplitude increases by 36% with a strain of 4×10⁻³. The effect of electrons occupying more than one subband on the Rashba spin splitting is discussed. Results show the internal electric field caused by the polarization is crucial for the considerable Rashba spin splitting in the Al_0.3Ga_0.7N/GaN heterostructure and the magnitude of the Rashba spin splitting can be greatly modulated by the uniaxial strain, which would benefit further research and application of spintronics.     

Controllable Spin Polarization of Charge Current by Rashba Spin Orbital Coupling

We report a theoretic study on modulating the spin polarization of charge current in a mesoscopic four-terminal device of cross structure by using the inverse spin hall effect. The scattering region of device is a two-dimensional electron gas (2DEG) with Rashba spin orbital interaction (RSOI), one of lead is ferromagnetic metal and other three leads are spin-degenerate normal metals. By using Landauer-Büttiker formalism, we found that when alongitudinal charge current flows through 2DEG scattering region from FM lead by external bias, the transverse current can be either a pure spin current or full-polarized charge current due to the combined effect of spin hall effect and its inverse process, and the polarization of this transverse current can be easily controlled by several device parameters such as the Fermi energy, ferromagnetic magnetization, and the RSOI constant. Our method may pave a new way to control the spin polarization of a charge current.     

Perfect tuning of spin-polarization in a ring-shaped multiple-quantum-dot nanostructure in the presence of Rashba spin–orbit coupling

Spin-dependent electronic transport through an open multiple-quantum-dot ring threaded by a magnetic flux is theoretically investigated by using the single particle Green?s function method. By introducing local Rashba spin–orbit interaction on an individual quantum dot and local magnetic moments on two of other quantum dots, we calculate the spin-polarization in the output lead. We find the spin-polarization can be tuned by manipulating magnetic moments, adjusting magnetic flux and setting the Rashba spin–orbit strength. It is also shown the system can operate as an efficient spin-inverter when the structure is adjusted properly. The analysis can be utilized in designing optimized nanodevices.     

Spin inverter and polarizer curved nanowire driven by Rashba and Dresselhaus spin–orbit interactions

We propose in theory a curved nanowire structure that can both serve as a spin inverter and a spin polarizer driven by a periodic Rashba spin–orbit coupling (SOC) and a uniform Dresselhaus SOC. The curved section of the U-shaped quasi-one dimensional nanowire with an arc of radius R and circumferential length $\pi R$ is divided into segments of equal length initially having only its inherent homogeneous Dresselhaus SOC. Then a Rashba-type SOC is applied at every alternating segment. By tuning the Rashba SOC strength and the incident electron energy, this device can flip the spin at the output of an incoming spin-polarized electron. On the other hand, this same device acts as a spin filter for an unpolarized input for which an outgoing electron with a non-zero polarization can be achieved without the application of an external magnetic field. Moreover, the potential modulation caused by the periodic Rashba SOC enables this device to function as an attenuator for a certain range of incident electron energies that can make the probability current density drop to 10⁻⁴ of its otherwise magnitude in other regimes.     

Spin-dependent electron transport of a waveguide with Rashba spin--orbit coupling in an electromagnetic field

We investigate theoretically the spin-dependent electron transport in a straight waveguide with Rashba spin--orbit coupling (SOC) under the irradiation of a transversely polarized electromagnetic (EM) field. Spin-dependent electron conductance and spin polarization are calculated as functions of the emitting energy of electrons or the strength of the EM field by adopting the mode matching approach. It is shown that the spin polarization can be manipulated by external parameters when the strength of Rashba SOC is strong. Furthermore, a sharp step structure is found to exist in the total electron conductance. These results can be understood by the nontrivial Rashba subbands intermixing and the electron intersubband transition when a finite-range transversely polarized EM field irradiates a straight waveguide.     

Spin-Dependent Electron Properties of a Triple-Terminal Quantum Dot Structure

Electron transport properties of a triple-terminal Aharonov-Bohm interferometer are theoretically studied. By applying a Rashba spin-orbit coupling to a quantum dot locally, we find that remarkable spin polarization comes about in the electron transport process with tuning the structure parameters, i.e., the magnetic flux or quantum dot levels. When the quantum dot levels are aligned with the Fermi level, there only appear spin polarization in this structure by the presence of an appropriate magnetic flux. However,in absence of magnetic flux spin polarization and spin separation can be simultaneously realized with the adjustment of quantum dot levels, namely, an incident electron from one terminal can select a specific terminal to depart from the quantum dots according to its spin state.     

Electrically controllable spin transport in bilayer graphene with Rashba spin-orbit interaction

We study the spin transport in bilayer graphene nanoribbons (BGNs) in the presence of Rashba spin-orbit interaction (SOI) and external gate voltages. It is found that the spin polarization can be significantly enhanced by the interlayer asymmetry or longitudinal mirror asymmetry produced by external gate voltages. Rashba SOI alone in BGNs can only generate current with spin polarization along the in-plane y direction, but the polarization components can be found along the x, y and z directions when a gate voltage is applied. High spin polarization with flexible orientation is obtained in the proposed device. Our findings shed new light on the generation of highly spin-polarized current in BGNs without external magnetic fields, which could have useful applications in spintronics device design.     

Effects of geometry and linearly polarized cavity photons on charge and spin currents in a quantum ring with spin-orbit interactions

We calculate the persistent charge and spin polarization current inside a finite-width quantum ring of realistic geometry as a function of the strength of the Rashba or Dresselhaus spin-orbit interaction. The time evolution in the transient regime of the two-dimensional (2D) quantum ring connected to electrically biased semi-infinite leads is governed by a time-convolutionless non-Markovian generalized master equation. The electrons are correlated via Coulomb interaction. In addition, the ring is embedded in a photon cavity with a single mode of linearly polarized photon field, which is polarized either perpendicular or parallel to the charge transport direction. To analyze carefully the physical effects, we compare to the analytical results of the toy model of a one-dimensional (1D) ring of non-interacting electrons with spin-orbit coupling. We find a pronounced charge current dip associated with many-electron level crossings at the Aharonov-Casher phase ΔΦ = π, which can be disguised by linearly polarized light. Qualitative agreement is found for the spin polarization currents of the 1D and 2D ring. Quantitatively, however, the spin polarization currents are weaker in the more realistic 2D ring, especially for weak spin-orbit interaction, but can be considerably enhanced with the aid of a linearly polarized electromagnetic field. Specific spin polarization current symmetries relating the Dresselhaus spin-orbit interaction case to the Rashba one are found to hold for the 2D ring, which is embedded in the photon cavity.     

Third harmonic generation in quantum dot with Rashba spin orbit interaction

Here we have investigated the influence of magnetic field and confinement potential on nonlinear optical property, third harmonic generation (THG) of a parabolically confinement quantum dot in the presence of Rashba spin orbit interaction. We have used density matrix formulation for obtaining optical properties within the effective mass approximation. The results are presented as a function of confining potential, magnetic field, Rashba spin orbit interaction strength and photon energy. Our results indicate that an increase of Rashba spin orbit interaction coefficient produces strong effect on the peak positions of THG. The role of confinement strength and spin orbit interaction strength as control parameters on THG have been demonstrated.     

半导体中自旋轨道耦合及自旋霍尔效应

本文主要评述和介绍半导体微结构中自旋轨道耦合的研究和最近的研究进展。我们细致地讨论了半导体微结构中自旋轨道耦合的物理起源和窄带隙半导体量子阱中的自旋霍尔效应。我们发现目前国际上广泛采用的线性Rashba模型在较大的电子平面波矢处失效:即自旋轨道耦合导致的能带自旋劈裂不再随电子波矢的增加而增加,而是开始下降,即出现强烈的非线性行为。这种非线性的行为起源于导带和价带间耦合的减弱。这种非线性行为还会导致电子的D’yakonov-Perel’自旋弛豫速率在较高能量处下降,与线性模型的结果完全相反。在此基础上,我们构造统一描述电子和空穴自旋霍尔效应的理论框架。我们的方法可以非微扰地计入自旋轨道耦合对本征自旋霍尔效应的影响。我们将此方法应用于强自旋轨道耦合的情形,即窄带隙CdHgTe/CdTe半导体量子阱。我们发现调节外电场或量子阱的阱宽可以作为导致量子相变和本征自旋霍尔效应的开关。我们的工作可能会为区别和实验验证本征自旋霍尔效应提供物理基础。     

Spin-dependent delay time and Hartman effect in asymmetrical graphene barrier under strain

We study the spin-dependent tunneling time, including group delay and dwell time, in a graphene based asymmetrical barrier with Rashba spin–orbit interaction in the presence of strain, sandwiched between two normal leads. We find that the spin-dependent tunneling time can be efficiently tuned by the barrier width, and the bias voltage. Moreover, for the zigzag direction strain although the oscillation period of the dwell time does not change, the oscillation amplitude increases by increasing the incident electron angle. It is found that for the armchair direction strain unlike the zigzag direction the group delay time at the normal incidence depends on the spin state of electrons and Hartman effect can be observed. In addition, for the armchair direction strain the spin polarization increases with increasing the RSOI strength and the bias voltage. The magnitude and sign of spin polarization can be manipulated by strain. In particular, by applying an external electric field the efficiency of the spin polarization is improved significantly in strained graphene, and a fully spin-polarized current is generated.     

A pure spin-current injector of semiconductor quantum dots with Andreev reflection and Rashba spin-orbit coupling

We propose a four-terminal device consisting of two parallel quantum dots with Rashba spin-orbit interaction (RSOI), coupled to two side superconductor leads and two common ferromagnetic leads, respectively. The two ferromagnetic leads and two quantum dots form a ring threaded by Aharonov-Bohm (AB) flux. This device possesses normal quasiparticle transmission between the two ferromagnetic leads, and normal and crossed Andreev reflections providing conductive holes. For the appropriate spin polarization of the ferromagnetic leads, RSOI and AB flux, the pure spin-up (or spin-down) current without net charge current in the right lead, which is due to the equal numbers of electrons and holes with the same spin-polarization moving along the same direction, can be obtained by adjusting the gate voltage, which may be used in practice as a pure spin-current injector.     

A spin switch device based on a triple quantum dots superlattice using the Dicke effect

Spin-dependent transport in a triple quantum dots superlattice system with a bridge coupling to two leads is studied. There exists an odd-even parity oscillation of spin polarization at the central dot level εc = 0 due to the spin-dependent Fano and Dicke effects induced by the quantum interference and the Rashba spin-orbit interaction. In the case of even numbers of triple quantum dots, the device can be used as a spin switch by tuning the energy difference h between the energies of the central and the lateral dots. These results may be helpful to design and fabricate practical spintronic devices.