化学法制备的HfO2薄膜的激光损伤阈值研究

 采用化学法制备了HfO₂介质膜，研究了热处理、紫外辐照以及Al₂O₃复合对HfO₂介质膜激光损伤阈值的影响。采用红外光谱（FTIR）和X射线衍射仪对薄膜进行了表征，并用输出波长为1.064 μm、脉宽为10 ns的电光调Q激光系统测试薄膜的激光损伤阈值。实验结果表明：采用150 ℃左右的温度对薄膜进行热处理可以提高薄膜的激光损伤阈值，所获得的薄膜的激光损伤阈值高达42.32 J/cm²，比热处理前的激光损伤阈值提高了82%；无机材料Al₂O₃的适量添加能够提高薄膜的激光损伤阈值，其中HfO₂与Al₂O₃的最佳质量配比约为95∶5；另外，对薄膜进行适当的紫外辐照也可改善HfO₂ 薄膜以及HfO₂-Al₂O₃复合薄膜的抗激光损伤性能。紫外辐照对提高HfO₂-Al₂O₃复合薄膜的激光损伤阈值效果尤为显著，辐照40 min后的激光损伤阈值达到44.33 J/cm²，比紫外辐照前的激光损伤阈值提高了90%。     

缓冲层对LBO晶体上1 064 nm，532 nm增透膜附着力的影响

 采用电子束蒸发方法在LBO晶体上制备了无缓冲层和具有不同缓冲层的1 064 nm,532 nm二倍频增透膜。利用分光光度计、纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力以及抗激光损伤性能进行了测试分析。结果表明：所有样品在1 064 nm和532 nm波长的剩余反射率都分别小于0.1％和0.2％;与无缓冲层样品相比,预镀Al₂O₃缓冲层样品的附着力提高了43.1％,具有SiO₂缓冲层样品的附着力显著提高,而MgF₂缓冲层的插入却导致薄膜附着力降低。应用全塑性压痕理论和剪切理论对薄膜的附着力增强机制进行了分析。薄膜的抗激光损伤性能分析表明,SiO₂缓冲层也有助于改进薄膜的激光损伤阈值。     

储存环自由电子激光器与KrF激光驱动器的激光谐振腔光学膜系实验研究

惯性约束核聚变氟化氪激光驱动器与储存环自由电子激光器,虽然其激光产生机理完全不同,但是它们对于激光谐振腔光学膜系的要求却几乎完全相同.新研制的Al₂O₃/SiO₂/MgF₂“双氧化物+单氟化物”紫外光学膜系,在248nm中心波长处,它的光学透射率测量值为0.27%—0.71%,反射率的计算值为96.5%,其光谱带宽为22.6nm.在脉冲宽度为23ns的KrF激光照射下,它的抗激光损伤阈值达到(5.36±0.30)J/cm²,是可用于储存环紫外波长自由电子激光研究与数千焦耳数量级高能、高功率KrF激光驱动器研究的高破坏阈值紫外光学膜系.     

不同工艺制备的高反射薄膜在真空与大气环境下的激光损伤特性

 建立了光学元件在真空环境下的激光损伤测量系统,采用电子束蒸发和离子辅助技术制备了Hf­₂/SiO₂高反射薄膜。对不同工艺制备的薄膜在真空与大气环境下的1 064 nm波长的激光损伤阈值进行了测量,对薄膜的损伤形貌进行了观测。对薄膜的损伤特性研究分析结果表明：薄膜在真空环境中的损伤阈值相对大气环境中有明显下降,其1∶1测试和R1测试损伤阈值下降约30%;两种环境中的薄膜损伤特性也不同,真空环境中损伤阈值的下降可能与热传导的不同有关。     

退火对He注入及随后208Pb27+辐照的Al2O3单晶PL谱的影响

利用高能离子研究了110 keV 的He⁺注入Al₂O₃单晶及随后230 MeV的²⁰⁸Pb²⁷⁺辐照并在不同温度条件下退火样品的光致发光的特性. 从测试结果可以清楚地看到在375 nm，390 nm，413 nm 和450 nm 出现了强烈的发光峰. 经过600 K退火2 h后测试结果显示，390 nm发光峰增强剧烈，而别的发光峰显示不明显. 在900 K退火条件下，390 nm的发光峰开始减弱相反在510 nm出现了较强的发光峰，到1100 K退火完毕后390 nm的发光峰完全消失，而510 nm的发光峰相对增强. 从辐照样品的FTIR谱中看到，波数在460—510 cm^-1间的吸收是振动模式，经过离子辐照后，吸收带展宽，随着辐照量的增大，Al₂O₃振动吸收峰消失，说明Al₂O₃振动模式被完全破坏. 1000—1300 cm^-1之间为Al-O-Al桥氧的伸缩振动模式，辐照后吸收带向高波数方向移动. 退火后的FTIR谱变化不大.     

SiO2内保护层对LiB3O5晶体倍频增透膜损伤阈值的影响

 利用离子辅助电子束沉积方法在LiB₃O₅基底上镀制了不加SiO₂内保护层和加SiO₂内保护层的倍频增透膜，测量了两类薄膜在波长1 064 nm多脉冲辐照下的激光损伤阈值，获得了两种不同的损伤形貌，并对损伤原因作了初步探讨。实验结果表明：保护层的加入把由基底膜层界面缺陷吸收所决定的阈值改变到由HfO₂膜层内缺陷吸收所决定的阈值，显著提高了倍频增透膜的抗激光损伤能力。     

溶胶-凝胶法MgF2紫外增透膜的制备和性能研究

 采用溶胶-凝胶法,以醋酸镁和氟化氢为原料,以甲醇为溶剂制备了MgF₂溶胶,利用浸渍提拉法在洁净石英基片上镀膜,考察了反应温度对溶胶微结构、薄膜结构和性能的影响。样品采用激光动态光散射、透射电镜、X射线粉体衍射仪、紫外-可见光谱仪、原子力显微镜进行表征。结果表明：通过该方法制备的表面平整的低折射率MgF₂薄膜,在紫外区具有很好的增透性能,同时在紫外波长355 nm激光的辐照下（脉宽6 ns）,薄膜具有较高的抗激光损伤性能,激光损伤阈值达10.85 J·cm^-2。     

SR-FEL宽带腔镜与双带腔镜光学膜系实验研究与研制

利用“电子束蒸发沉积薄膜生长技术+离子束溅射沉积薄膜生长技术”、“HfO₂/SiO₂+Al₂O₃/SiO₂+M-SiO₂”复合光学膜系设计技术、400°C4h高温处理技术, 研制的SR-FEL宽带腔镜光学膜系在355nm中心波长的绝对光学反射率测量值为R(355nm)=99.45%, 反射光谱带宽测量值为Δλ(R≥99.00%)=75nm; 研制的355nm/248nm双带腔镜光学膜系, 在355nm中心波长, 其绝对光学反射率测量值为R(355nm)=99.69%, 反射光谱带宽测量值为Δλ(R≥99.00%)=59nm; 在248nm中心波长, R(248nm)=98.21%, 绝对光学反射率光谱带宽测量值Δλ(R≥99.00)=9mm, Δλ(R≥98.00%)=33nm.     

SiO2半波覆盖层对HfO2/SiO2高反膜激光损伤的影响

 研究了SiO₂半波覆盖层对HfO₂/SiO₂高反射膜1064nm激光损伤的影响,分析薄膜的激光损伤特性及图貌得出, 对于单脉冲（1-ON-1）激光损伤,SiO₂半波覆盖层能提高HfO₂/SiO₂高反膜的激光损伤阈值;可显著降低激光损伤程度,减小灾难性损伤发生的概率;可大幅度提高HfO₂/SiO₂高反膜膜的抗激光损伤能力。     

LBO晶体上1 064，532 nm倍频增透膜的镀制及性能分析

 用电子束蒸发沉积方法在X切LBO（X-LBO）晶体上镀制了两种不同膜系结构的1 064和532 nm倍频增透膜，其中一种膜系结构为基底/ZrO₂/Y₂O₃/Al₂O₃/SiO₂/空气，另一种为基底/0.5Al₂O₃/ZrO₂/Y₂O₃/Al₂O₃/SiO₂/空气，两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线，发现两种增透膜在1 064和532 nm处的反射率均小于0.5％，实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473 K的退火处理，结果发现两种膜系结构均表现了较优异的光学性能，氧化铝过渡层的加入使薄膜具有强的热应力性能。     

1 053，527，351 nm倍频分离膜的制备与性能研究

 用电子束蒸发及光电极值监控技术在石英基底上沉积了三倍频分离膜，将部分样品置空气中于250 ℃温度下进行3 h热退火处理。然后用Lambda900分光光度计测量了样品的光谱性能；用表面热透镜技术测量了样品的弱吸收值；用调Q脉冲激光装置测试了样品分别在355 nm和1 064 nm的抗激光损伤阈值。实验结果发现，样品的实验光谱性能良好，退火前后其光谱性能几乎没有发生温漂，说明薄膜的温度稳定性好；同时弱吸收平均值从退火前的1.07×10^-4下降到退火后的6.2×10^-5，从而使对基频的抗激光损伤阈值提高，从14.6 J/cm²上升到18.8 J/cm²，但是三倍频阈值在退火后有显著降低，从7.5 J/cm²下降到2.5 J/cm²。     

Overcoat dependence of laser-induced damage threshold of 355 nm HR coatings

A series of HR coatings, with and without overcoat, were prepared by electron beam evaporation using the same deposition process. The laser-induced damage threshold (LIDT) was measured by a 355 nm Nd:YAG laser with a pulse width of 8 ns. Damage morphologies of samples were observed by Leica-DMRXE Microscope. The stress was measured by viewing the substrate deformation before and after coatings deposition using an optical interferometer. Reflectance of the samples was measured by Lambda 900 Spectrometer. The theoretical results of electric field distributions of the samples were calculate by thin film design software (TFCalc). It was found that SiO₂ overcoat had improved the LIDT greatly, while MgF₂ overcoat had little effect on the LIDT because of its high stress in the HR coatings. The damage morphologies were different among HR coatings with and without overcoats.     

沉积温度对热舟蒸发MgF2薄膜性能的影响

 采用热舟蒸发方法沉积了氟化镁(MgF₂)材料的单层膜,沉积温度从200 ℃上升到350 ℃,间隔为50 ℃。测量了样品的透射率和反射率光谱曲线,进行了表面粗糙度的标定,并在此基础上进行了光学损耗及散射损耗的计算。同时对355 nm波长处的激光诱导损伤阈值进行了测量。结果表明:随着沉积温度的升高,光学损耗增加;在短波长范围散射损耗在光学损耗中所占比例很小,光学损耗的增加主要由吸收损耗引起;在355 nm波长处的损伤阈值变化与吸收损耗的变化趋势相关,损伤机制主要是吸收起主导作用。样品的微缺陷密度也是影响损伤阈值的一个重要因素,损伤阈值随缺陷密度的增加而降低。     

Effects of deposition parameters on laser-induced damage threshold of Ta2O5 films

Ta₂O₅ films were deposited on BK7 substrates by e-beam evaporation with different deposition parameters such as substrate temperature (323-623 K), oxygen pressure (0.5-3.0×10⁻² Pa) and deposition rate (0.2-0.5 nm/s). Absorption, scattering and chemical composition were investigated by surface thermal lensing (STL) technique, total integrated scattering (TIS) measurement and X-ray photoelectron spectroscopy (XPS), respectively. The laser-induced damage threshold (LIDT) was assessed using pulsed Nd:YAG 1064 nm laser at a pulse length of 12 ns. The results showed that optical properties, absorption and LIDT were influenced by the deposition parameters and annealing. However, scattering was little correlated with the deposition parameters. On the whole, the LIDT increased with increasing substrate temperature and oxygen pressure, whereas it increased firstly and then decreased upon increasing deposition rate. After annealing at 673 K for 12 h, the LIDT of films improved significantly. The dependence of possible damage mechanism on deposition parameters was discussed.     

Stress, absorptance and laser-induced damage threshold properties of 355-nm HR coatings

A number of 355-nm Al₂O₃/MgF₂ high-reflectance (HR) coatings were prepared by electron-beam evaporation. The influences of the number of coating layers and deposition temperature on the 355-nm Al₂O₃/MgF₂ HR coatings were investigated. The stress was measured by viewing the substrate deformation before and after coating deposition using an optical interferometer. The laser-induced damage threshold (LIDT) of the samples was measured by a 355-nm Nd:YAG laser with a pulse width of 8 ns. Transmittance and reflectance of the samples were measured by a Lambda 900 spectrometer. It was found that absorptance was the main reason to result in a low LIDT of 355-nm Al₂O₃/MgF₂ HR coatings. The stress in Al₂O₃/MgF₂ HR coatings played an unimportant role in the LIDT, although MgF₂ is known to have high tensile stress.     

Working Pressure Dependence of Properties of Al2O3 Thin Films Prepared by Electron Beam Evaporation

The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold （LIDT） is measured by a Nd：YAG laser at 355 nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd：YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LIDT of Al2O3 thin film.     

Calculation of temperature fields with a film-substrate interfacial layer model to discuss the layer-pair number effects on the damage thresholds of LaF3/MgF2 high reflectors at 355 nm

Laser induced damage thresholds (LIDT) of LaF₃/MgF₂ high reflectors at 355 nm were measured and investigated as a function of layer-pair number. Generally, LaF₃/MgF₂ coatings with more layer pairs possessed higher LIDT, but coatings with too high layer-pair number crazed because of high tensile stress, so the LIDT of them decreased badly. The temperature rise in the coatings was calculated based on a film-substrate interfacial absorption model, and the depth of the damage in the coatings were measured by a Veeco optical profilograph. The two characterization methods together were used to interpret the effects of layer-pair number on LIDT, and the damage mechanism of coatings at laser wavelength of 355 nm was also discussed.     

Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases

Ta2O5 films axe deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2 O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer （XRD） results. X-ray photoelectron spectroscopy （XPS） analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2 O5 film achieves the highest laser induced damage threshold （LIDT） either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.     

Influence of SiO2 additional layers on the laser induced damage threshold of Ta2O5 films

A series of Ta₂O₅ films with different SiO₂ additional layers including overcoat, undercoat and interlayer was prepared by electron beam evaporation under the same deposition process. Absorption of samples was measured using the surface thermal lensing (STL) technique. The electric field distributions of the samples were theoretical predicted using thin film design software (TFCalc). The laser induced damage threshold (LIDT) was assessed using an Nd:YAG laser operating at 1064 nm with a pulse length of 12 ns. It was found that SiO₂ additional layers resulted in a slight increase of the absorption, whereas they exerted little influence on the microdefects. The electric field distribution among the samples was unchanged by adding an SiO₂ overcoat and undercoat, yet was changed by adding an interlayer. SiO₂ undercoat. The interlayer improved the LIDT greatly, whereas the SiO₂ overcoat had little effect on the LIDT.     

两种后处理方法对HfO2薄膜性能的影响

利用电子束蒸发和光电极值监控技术制备了氧化铪薄膜,并分别用两种后处理方法(空气中退火和氧等离子体轰击)对样品进行了处理.然后,对样品的透过率、吸收和抗激光损伤阈值进行了测试分析.实验结果表明,两种后处理方法都能不同程度地降低了氧化铪薄膜的吸收损耗、提高了抗激光损伤阈值.实验结果还表明,氧等离子体轰击的后处理效果明显优于热退火,样品的吸收平均值在氧等离子体后处理前后分别为34.8 ppm和9.0 ppm,而基频(1 064 nm)激光损伤阈值分别为10.0 J/cm2和21.4 J/cm2.