共查询到19条相似文献,搜索用时 46 毫秒
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中红外带通滤光片在航天、气象、遥感等领域有着重要的应用,峰值透过率和通带半宽度是带通滤光片的重要指标,主要取决于光学薄膜的膜系结构和具体设计。论述了一种在锗基底上采用锗和硫化锌两种材料设计并成功制备出中红外带通滤光片的方法。详细介绍了镀膜材料的选择以及这种方法的设计理论,给出了膜系结构,运用离子辅助沉积工艺在ZZSX-1100镀膜机上制备出了这种滤光片,测试结果表明:所制备的滤光片峰值透过率达到87%以上,通带半宽度为70 nm,光谱性能稳定,膜层致密,附着力好,膜系结构简单,易于实现。 相似文献
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硅薄膜的短波红外光学特性和1.30μm带通滤光片 总被引:1,自引:0,他引:1
在短波红外区域(1~3μm),硅薄膜材料因其具有折射率高、透明性好、膜层应力易匹配等诸多优点而得到广泛应用。基于改进后的Sellmeier模型拟合出了制备的硅薄膜的短波红外光学特性,以此为基础,选用硅和二氧化硅两种材料,设计并制备出中心波长在1.30μm,相对带宽2.46%的带通滤光片。利用了硅薄膜在波长小于1.0μm波段的吸收特性较好地扩展了带外截止范围。测量结果表明,具有2个谐振腔的带通滤光片峰值透射率达到85.8%,半功率带宽控制在约32nm,带外截止范围覆盖了波长小于1.75μm的光谱区域。 相似文献
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讨论了滤光片光谱透过率的测量方法,分析了产生测量误差的因素,并提出了一种提高测量精度的方法,为准确测量滤光片的光谱透过率提供了一定指导。 相似文献
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碲化铅/硫化锌红外多层滤光片的光谱漂移研究 总被引:2,自引:0,他引:2
采用碲化铅和硫化锌作为镀膜材料,研制了空间红外光学系统使用的红外多层带通滤光片。本文首次利用导纳轨迹图解技术,当在空间低温条件下使用时,对由碲化铅的折射率变化引起的光谱漂移机理进行了研究。根据多层膜各膜层间存在的光学厚度的补偿效应,建立了光谱漂移模型。并对设计的滤光片采用对分法计算了它在低温条件下波长的漂移量,计算结果与研制出的滤光片实测结果吻合很好。并成功地将研究结果应用于滤光片的设计,对原设计结果进行了准确的修正,使得最终研制的滤光片在低温下完全满足使用要求。 相似文献
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利用Telops公司设计的Hyper-Cam中波高光谱成像仪对水泥地上某坦克模型进行3~5μm波段的红外高光谱成像测量。对实验数据进行了逐像素点的大气校正。基于矫正后的实验数据,分析了仪器误差、随机误差、大气校正传递误差等对测试不确定度的影响。分析了该坦克模型在不同谱段上的亮度分布和模型上不同部位的光谱分布特性。结果表明:在波数为2 000~3 000 cm-1波段,其相对不确定度一直稳定在10%以内,但是在大于3 000 cm-1的波段,其误差迅速上升,主要因为常温物体的中波辐射低,在该波段目标辐射与大气路程辐射接近,而引起的噪声增大,造成的测试信噪比降低。该坦克模型光谱辐射亮度测试数据的平均相对不确定度在20%以内,整体误差较低。光谱分布上,坦克各部分特征点和水泥地表的光谱辐射亮度在波长为4.2~5μm波段时的差异性比波长为3.0~4.2μm波段时的差异性更大,且探测器接收到的4.2~5μm波段的光谱辐射亮度要大于3.0~4.2μm的光谱辐射亮度。由于4.3μm波段处于大气吸收带,大气透射率几乎为0,以至于无法获得目标的光谱辐射亮度的真实... 相似文献
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线性渐变滤光片光谱分光特性及检测方法研究 总被引:1,自引:0,他引:1
线性渐变滤光片(LVF)被广泛应用于各种小型快速分光测试设备中。分光特性进行研究,给出了其分光特性的高斯函数表达式,分析了各个参数与线性渐变滤光片中心透过率、谱线宽度和线性渐变系数等特性的关系。将光谱成像仪标定的单色仪法引入线性渐变滤光片的分光特性检测中,讨论了检测系统的敏感性,并给出了相应的误差容限公式。分析表明单色仪出射狭缝相对光轴平移量,以及滤光片倾斜角度对检测精度影响最大,实际测量中可通过光路和系统机构的调整达到精度要求。构建检测系统完成了对成品线性渐变滤光片分光特性的检测,结果表明对中心透过率的测量均方根误差小于0.05%,验证了方法的精确性,普适性,检测结果可为线性渐变滤光片相关系统的设计和标定提供参数指导。 相似文献
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The bandpass width and the diffraction efficiency of a non-collinear acousto-optic tunable filter are considered as functions of the optical wavelength for fixed values of the direction of propagation of the optic wave, the length of the acousto-optic interaction and the power density of the controlling RF-signal. A comparison between the calculated and the experimentally measured spectral dependencies is discussed and illustrated from the viewpoint of practical application for a TeO2 filter. It is shown that in the approximation used, satisfactory agreement can be achieved between the experimental and calculated dependencies. 相似文献
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Three kinds of band-pass filters (BPFs), termed a TE BPF, a TM BPF and a BPF at oblique incidence, are designed by crossing the band edges of two different one-dimensional (1D) photonic crystals (PCs). The TE BPF, fulfilling the function of high reflectivity for p-polarization and high transmittance in a narrow pass-band for s-polarization, is constructed by two subPCs, one of which is obtained by decreasing the lattice constant of the other one while the other parameters keep the same. The TM BPF also comprises two subPCs, but the materials of one subPC are quite different with those of the other one. Similarly, the BPF at oblique incidence, from which both polarization waves can transmit in a narrow pass-band at oblique incidence, is composed of two different subPCs. Note that, the distribution of the wave impedance of material in each BPF should be periodic to prevent unexpected defect modes. The new filters not only provide narrow pass-bands and wide non-transmission bands, but also have simple structures. This is a result of the fact that the wave impedance ratio between composites is enlarged by introducing magnetic materials. The new designs have potential applications in optical filters and optical integrated circuits. 相似文献
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Electrical properties of an AlInN/GaN high-electron mobility transistor (HEMT) on a sapphire substrate are investi-gated in a cryogenic temperature range from 295 K down to 50 K. It is shown that drain saturation current and conductance increase as transistor operation temperature decreases. A self-heating effect is observed over the entire range of temperature under high power consumption. The dependence of channel electron mobility on electron density is investigated in detail. It is found that aside from Coulomb scattering, electrons that have been pushed away from the AlInN/GaN interface into the bulk GaN substrate at a large reverse gate voltage are also responsible for the electron mobility drop with the decrease of electron density. 相似文献
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GPM based on THGEM has shown its competitive strength compared to the conventional PMT, espe- cially in the low background research such as dark matter detection. A kind of THGEM made from PTFE, named PTFE-THGEM, is developed for the GPM to be used in CDEX. The PTFE has a lot of advantages especially its low level radioactivity. The PTFE-THGEM was tested at room and cryogenic temperature. It has a high gain in different gases and shows good stability at room temperature. The gain of a single PTFE-THGEM reached 112 at 117 K. The penning effect is also discussed in this paper to explain the "abnormal" phenomena of the gain in different gases. 相似文献