INFLUENCE OF C+-IMPLANTATION DOSE ON BLUE EMISSION AND MICROSTRUCTURES OF Si-BASED POROUS β-SIC

Crystal Si were implanted with different doses of C⁺ from 10¹¹ to 10¹⁷ cm^-2 at an energy of 50 keV. β-SiC precipitates were formed by thermal annealing at 1050 ℃ for 1 h and porous structures were prepared by electrochemical anodization. Under the excitation of ultraviolet, the samples, with C⁺ dose ≥10¹⁵ cm^-2 have intense blue emission which is stronger than the photoluminescence (PL) intensity of reference porous silicon (PS), and increases as C⁺ dose increases; the samples with C⁺ dose ≤10¹⁴ cm^-2 show similar PL spectra to those of PS. The blue peak intensity in PL spectra is correlated with the TO phonon absorption strength of β-SiC in infrared absorption spectra. The transmission electron microscopy study shows that the blue peak is also correlated with the microstructures. Because porous β-SiC is nanometer in size, it is suggested that the quantum confinement effect be responsible for the blue light emission.     

Optoelectronic characterization of ZnS/PS systems

ZnS thin films are deposited on porous silicon （PS） substrates with different porosities by pulsed laser deposition （PLD）. The photoluminescence （PL） spectra of the samples are measured at room temperature. The results show that the PL intensity of PS after deposition of ZnS increases and is associated with a blue shift. With the increase of PS porosity, a green emission at about 550 nm is observed in the PL spectra of ZnS/PS systems, which may be ascribed to the defect-center luminescence of ZnS films. Junction current- voltage （I-V） characteristics were studied. The rectifying behavior of I-V characteristics indicates the formation of ZnS/PS heterojunctions, and the forward current is seen to increase when the PS porosity is increased.     

The effect of high iron-ion implantation doses on the X-ray emission spectra of silicon

X-ray emission spectroscopy (Si L _{2, 3} spectra, 3d3s → 2p electronic transition) was employed to study p-and n-type silicon samples implanted with Fe⁺ ions in a pulse mode (the implantation energy was 30 keV, the pulse current was varied up to 0.5 A, the pulse duration was 400 μs, and the ion irradiation doses ranged from 10¹⁴ to 10¹⁷ cm⁻²). The x-ray emission spectra were found to be dependent on the ion irradiation dose and the electron-accelerating voltage that was used in the x-ray studies. By comparing the Si L spectra with the spectra of reference materials and by modeling the former spectra, it was revealed that, as the ion-irradiation dose increases, there occur disordering of the structure, partial amorphization of the sample in a surface layer approximately 7200-? thick, and its subsequent recrystallization (under high irradiation doses). It was shown that this effect is most pronounced in a layer at a depth of ∼1000 ? and is not associated with the formation of iron silicide FeSi in the bulk of the sample but rather is due to the breakage of Si-Si bonds caused by ion implantation under the irradiation doses used. Original Russian Text ? D.A. Zatsepin, E.S. Yanenkova, é.Z. Kurmaev, V.M. Cherkashenko, S.N. Shamin, S.O. Cholakh, 2006, published in Fizika Tverdogo Tela, 2006, Vol. 48, No. 2, pp. 204–209.     

Formation of the XeI excimer sustained by dielectric barrier discharge in Xe／I2 at low pressure

Dielectric barrier discharge is used to study the mechanism of XeI excimer formation in the mixture of Xe and I₂ at low pressures (<1330 Pa). Fluorescence emission in the spectral region of 200－260 nm is examined. We report on the characteristics of the 253 nm emission intensity which varied with different total pressure. The results indicate that under the present experimental conditions, electron impact is the major reaction producing the excimer XeI(B), interpreted as Xe⁺+I₂^-→XeI(B)+ I^*, then radiating 253 nm fluorescence from transition B→X. The 253 nm emission increases with the total gas pressure up to a maximum value at a pressure of about 540 Pa, then decreases as the gas pressure is further increased. The 206 nm emission is determined by I^* from ionic recombination between Xe⁺ and I₂^-. This result differs from previous works under other experimental conditions.     

Effect of annealing on structural, optical and electrical properties of ZnS/porous silicon composites

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I--V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diffraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature, the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550~nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I--V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.     

FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM

Aluminium films with various thickness between 700 nm and 1μm were deposited on Si (100) substrates, and 400 keV N₂⁺ ions with doses ranging from 4.3×10¹⁷ to 1.8×10¹⁸ N/cm² were implanted into the alu-minium films on silicon, Rutherford Backscattering (RBS) and channeling, secondary ion mass spectroscopy (SIMS), Fourier transform infrared spectra (FTIR), X-ray diffraction (XRD), transmission electron microscopy (TEM) and spreading resistance probes (SRP) were used to characterize the synthesized aluminium nitride. The experiments showed that when the implantation dose was higher than a critical dose N_c, a buried stoichiometric AlN layer with high resistance was formed, while no apparent AlN XRD peaks in the as-implanted samples were observed; however, there was a strong AlN(100) diffraction peak appearing after annealing at 500 ℃ for 1h. The computer program, Implantation of Reactive Ions into Silicon (IRIS), has been modified and used to simulate the formation of the buried AlN layer as N₂⁺ is implanted into aluminium. We find a good agreement between experimental measurements and IRIS simulation.     

The effect of annealing on structural,optical and electrical properties of ZnS/porous silicon composites

ZnS films were prepared by pulsed laser deposition (PLD) on porous silicon (PS) substrates. This paper investigates the effect of annealing temperature on the structural, morphological, optical and electrical properties of ZnS/PS composites by x-ray diffraction (XRD), scanning electron microscope (SEM), photoluminescence (PL) and I–V characteristics. It is found that the ZnS films deposited on PS substrates were grown in preferred orientation along β-ZnS (111) direction, and the intensity of diflraction peak increases with increasing annealing temperature, which is attributed to the grain growth and the enhancement of crystallinity of ZnS films. The smooth and uniform surface of the as-prepared ZnS/PS composite becomes rougher through annealing treatment, which is related to grain growth at the higher annealing temperature. With the increase of annealing temperature,the intensity of self-activated luminescence of ZnS increases, while the luminescence intensity of PS decreases, and a new green emission located around 550 nm appeared in the PL spectra of ZnS/PS composites which is ascribed to the defect-center luminescence of ZnS. The I-V characteristics of ZnS/PS heterojunctions exhibited rectifying behavior, and the forward current increases with increasing annealing temperature.     

ANALYSIS OF THE HDO ABSORPTION SPECTRUM BETWEEN 9600-10200cm-1

The absorption spectrum of HD¹⁶ O was recorded at a resolution of 0.02 cm^-1 with a Bruker IFS 120HR Fourier Transform Spectrometer in the region of 9600-10200 cm^-1. As far as we know it is the first time to record and analyze the HDO spectrum in this region which was assigned as the ν₁+2ν₃ and 2ν₂+2ν₃ bands. With the strong resonance interactions between these two bands considered, the spectroscopic parameters were optimized by the nonlinear least squares method.     

Surface plasmon enhanced photoluminescence in amorphous silicon carbide films by adjusting Ag island film sizes

Ag island films with different sizes are deposited on hydrogenated amorphous silicon carbide (α-SiC:H) films, and the influences of Ag island films on the optical properties of the α-SiC:H films are investigated. Atomic force microscope images show that Ag nanoislands are formed after Ag coating, and the size of the Ag islands increases with increasing Ag deposition time. The extinction spectra indicate that two resonance absorption peaks which correspond to out-of-plane and in-plane surface plasmon modes of the Ag island films are obtained, and the resonance peak shifts toward longer wavelength with increasing Ag island size. The photoluminescence (PL) enhancement or quenching depends on the size of Ag islands, and PL enhancement by 1.6 times on the main PL band is obtained when the sputtering time is 10 min. Analyses show that the influence of surface plasmons on the PL of α-SiC:H is determined by the competition between the scattering and absorption of Ag islands, and PL enhancement is obtained when scattering is the main interaction between the Ag islands and incident light.     

EMISSION AND MASS SPECTRAL ANALYSES OF LASER ABLATED AlN PLUMES

The emission spectrum of the ³Π_i-³Π_i (0－0) AlN band and some N⁺ and N emission lines have been studied in the visible region for the laser ablated plumes. The Stark-shift and Stark broadening were observed. The component species in the ablated plumes were analyzed by time of flight mass spectroscopy. The electron density and the temperature were calculated from the Stark-shift and Stark broadening of N(²D) emission line. The densities of AlN⁺, Al⁺, N⁺, AlN, N and Al were estimated by the mass spectra and the Saha equation.     

Scaling of x-ray emission and ion velocity in laser produced Cu plasmas

The x-ray emission from slab targets of copper irradiated by Nd:glass laser (1.054 μm, 5 and 15 ns) at intensities between 10¹² and 10¹¹W/cm² has been studied. The x-ray emissions were monitored with the help of high quantum efficiency x-ray silicon photo diodes and vacuum photo diodes, all covered with aluminium filters of different thickness. The x-ray intensity vs the laser intensity has a scaling factor of (1.2–1.92). The relative x-ray conversion efficiency follows an empirical relationship which is in close agreement with the one reported by Babonneau et al. The ion velocities were monitored using Langmuir probes placed at different angles and radial distances from the target position. The variation of the ion velocity with the laser intensity follows a scaling of the form Φ ^β where β ∼0.22 which is in good agreement with the reported scaling factor values. The results on the x-ray emission from Cu plasma are reported.     

Temperature dependence of photoluminescence property in BaIn2O4

The temperature-dependent photoluminescence(PL) spectra of BaIn2O4,prepared by coprecipitation,are measured and discussed.Aside from the reported 3.02-eV violet emission,the 1.81-eV yellow emission involved with oxygen vacancy is also observed at room temperature wherein the deep donor level is at 1.2 eV.With the temperature increasing,the peak energies for both emissions show a red shift.Moreover,the yellow emission intensity decreases while the violet emission intensity increases.The temperature dependence of the yellow emission intensity fits very well into the one-step quenching process equation,indicating a fitted activation energy at 19.2 meV.     

Photoluminescence and thermoluminescence properties of SnO2 nanoparticles embedded in Li20-K20-B203 with Cu-doping

Cu-doped borate glass co-doped with SnO2 nanoparticles is fabricated by melt quenching. The structure and morphology of the samples are examined by X-ray diffraction and field emission scanning electron microscopy. Up-conversion enhancement is observed in the photoluminescence （PL） and thermolumines- cence （TL） intensities of the glass. PL emission spectra are identified in the blue and green regions, and a fourfold increase in emission intensity may be observed in the presence of embedded SnO2 nanoparticles. The glow curve is recorded at 215℃, and fourfold increases in TL intensity are obtained by addition of 0.1 mol% SnO2 nanoparticles to the glass. Higher TL responses of the samples are observed in the energy range of 15-100 KeV. At energy levels greater than -0.1 MeV, however, flat responses are obtained. The activation energy and frequency factor of the second-order kinetic reaction are calculated by the peak shape method.     

HIGH-RESOLUTION ANALYSIS OF THE ν2+2ν3 BAND OF HDO

The Fourier transform spectrum of the ν₂+2ν₃ band of the HDO molecule was recorded with a resolution of 0.02 cm^-1. The spectrum was rotational analysed and the spectroscopic parameters of the (0,1,2) state were estimated in terms of Watson's effective rotational Hamiltonian model and also the model in the Padé-Borel approximation form. They reproduce the upper energy levels with an accuracy close to the experimental uncertainty of 0.001 cm^-1.     

Dynamics of high-temperature plasma formation during laser irradiation of three-dimensionally structured,low-density matter

Results are presented from an experimental investigation of the properties of the plasma produced by the action of a radiation pulse at the second harmonic of a Nd laser, with average intensity ~5·10¹⁴ W/cm² in the focal spot, on flat targets consisting of porous polypropylene (CH)_x with an average density of 0.02 g/cm³ (close to the critical plasma density) and with ~50 μm pores. The properties of the laser plasma obtained with porous and continuous targets are substantially different. The main differences are volume absorption of the laser radiation in the porous material and much larger spatial scales of energy transfer. The experimentally measured longitudinal ablation velocity in the porous material was equal to (1.5–3)·10⁷ cm/s, which corresponds to a mass velocity of (3–6)·10⁵ g/cm²· s, and the transverse (with respect to the direction of the laser beam) propagation velocity of the thermal wave was equal to ~(1–2) ·10⁷ cm/s. The spatial dimensions of the plasma plume were ~20–30μm. The plasma was localized in a 200–400μm region inside the target. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 7, 462–467 (10 October 1996)     

ELLIPSOMETRIC SPECTRA OF CONDUCTING POLYANILINE

We report the ellipsometric spectrum studies on a new kind of conducting polymers, polyaniline. In the UV-visible range (1.4-4.8eV photon energy region) the absorption coef-ficient, the complex dielectric function and the refractive index of polyaniline as functions of photon energy are obtained. The spectra of nonconducting and fully conducting polyaniline have been analyzed and discussed. The experimental results show that the emeraldine base form of polyaniline has a large energy gap (E_g～3.6eV) and its absorption spectrum shows a broad exciton absorption peak centered at 2 eV. The absorption spectrum of emeraldine salt after protonation have four absorption peaks centered at 1.5, 1.83, 3.0 and 3.88eV. We also investigated the spectrum evolution of the samples from nonconducting (σ<10^-9Ω^-1·cm^-1) to conducting (σ≈10⁺¹Ω^-1·cm^-1) states, and give the dielectric function and the refractive index of the samples.     

Laser-produced plasma helium-like titanium Kα x-ray source and its application to Rayleighben-Taylor instability study

Several experiments are performed on the ShenGuang-II laser facility to investigate an x-ray source and test radiography concepts. X-ray lines emitted from laser-produced plasmas are the most practical means of generating these high intensity sources. By using a time-integrated space-resolved keV spectroscope and pinhole camera, potential helium-like titanium Kα x-ray backlighting (radiography) line source is studied as a function of laser wavelength, ratio of pre-pulse intensity to main pulse intensity, and laser intensity (from 7.25 to ～11.3× 10¹⁵ W/cm²⁾. One-dimensional radiography using a grid consisting of 5 μm Au wires on 16 μm period and the pinhole-assisted point projection is tested. The measurements show that the size of the helium-like titanium Kα source from a simple foil target is larger than 100 μm, and relative x-ray line emission conversion efficiency ξ_x from the incident laser light energy to helium-like titanium K-shell spectrum increases significantly with pre-pulse intensity increasing, increases rapidly with laser wavelength decreasing, and increases moderately with main laser intensity increasing. It is also found that a gold gird foils can reach an imaging resolution better than 5-μm featured with high contrast. It is further demonstrated that the pinhole-assisted point projection at such a level will be a novel two-dimensional imaging diagnostic technique for inertial confinement fusion experiments.     

PHOTO ACOUSTIC MEASUREMENTS OF WATER VAPOR ABSORPTION COEFFICIENT IN UV SPECTRAL REGION

Data on the absorption coefficient of H₂O in binary mixture with N₂ in UV region of spectra are presented. With the use of the high sensitivity photoacoustic spectrometer, the following values of the absorption coefficient were found: 2.3×10^-9cm^-1·Pa^-1(λ=255 nm), 0.9×10^-9 cm^-1·Pa^-1(λ=271 nm), and 1.6×10^-9cm^-1 ·Pa^-1(λ=289 nm).     

Low temperature laser absorption spectra of methane in the near-infrared at 1.65 μm for lower state energy determination

Direct absorption spectra of the 2v₃ band of methane (CH₄) from 6038 to 6050 cm^-1 were studied at different low temperatures using a newly developed cryogenic cell in combination with a distributed feedback (DFB) diode laser. The cryogenic cell can operate at any stabilized temperature ranging from room temperature down to 100 K with temperature fluctuation less than ±1 K within 1 hour. In the present work, the CH₄ spectra in the range of 6038-6050 cm^-1 were recorded at 296, 266, 248, 223, 198, and 176 K. The lower state energy E″ and the rotational assignment of the angular momentum J were determined by a “2-low-temperature spectra method” using the spectra recorded at 198 and 176 K. The results were compared with the data from the GOSAT and the recently reported results from Campargue and co-workers using two spectra measured at room temperature and 81 K. We demonstrated that the use of a 2-low-temperature spectra method permits one to complete the E″ and J values missed in the previous studies.     

Spectroscopic properties of Nd—doped phosphate glass with a high emission cross section

Neodymium doped phosphate glasses have been prepared by the semi-continuous melting technique. Their absorption and emission spectra have been recorded at room temperature. The Judd－Ofelt theory has been applied to evaluate the stimulated emission cross sections of ⁴F_3/2→⁴I_11/2 transition for Nd³⁺. The higher stimulated emission cross section, 4.0×10^-20cm², is obtained. The fluorescence decays of the ⁴F_3/2→⁴I_11/2 transition of Nd³⁺ are measured for the samples doped (0.7－10) wt% of Nd₂O₃ at room temperature. The concentration quenching of Nd-doped phosphate glass is mainly attributed to cross-relaxation and energy migration. The site-dependent properties of fluorescence spectra and the fluorescence lifetime of the Nd³⁺-doped phosphate glass (with 2.2wt%Nd₂O₃) are studied using laser-induced fluorescence line narrowing techniques, and the site-to-site variations of optical properties are observed at low temperature.