The influence of second-nearest neighbor interactions on the thermodynamic properties of B2 phases with substitutional defects

In order to explain some discrepancies between the theoretical predictions and the experimental data for the thermodynamic properties of substitutional B 2 phases,Chang's theoretical model is extended by including the influence of second-nearest neighbor interactions. For this purpose a new parameter is introduced which is defined as the ratio of the interchange energies between second-nearest and first-nearest neighbors. Theoretical equations are derived for the compositional dependence of the activity and the partial molar enthalpy. Using literature data, the following phases are re-evaluated in terms of the disorder parameter and the newly introduced parameter : -AuZn, -AuCd, -AgMg, and -NiZn. Very good agreement is found between the theoretical curves and the experimental data for the four systems. The values of obtained range from 0.0 for -NiZn to 0.5 for -AuZn. The inclusion of second-nearest neighbor interactions has little influence on the values of . It is shown that the behavior of the activity curve in -AuZn can be explained in a physically more meaningful way by including interactions between all second-nearest neighbors rather than interactions between gold substitutional defects only, as was done byLibowitz.With 5 Figures     

Microwave spectrum and substitutional structure of CH2DF

Forty-two transitions of the microwave spectrum of CH₂DF have been observed in the region between 75 and 450 GHz. The measurement of both a-type and b-type transitions makes possible the analysis of the spectrum and the accurate calculation of the rotational constants (in MHz): = 119 675.0535 ± 0.074, = 24 043.4415 ± 0.072, ? = 22959.3732 °0.072, °j = 0.049371 ±0.00011, °_jk = 0.34268 ±0.0006, 2_k = 3,3774 ± 0.0035, δ _j = 0.002329 ± 0.000045, δ_k = 0.0687 ± 0.036. These constants, in combination with the results of earlier work on the symmetric speci r_s structure calculation based entirely on high-accuracy microwave data. The structural parameters are r_CH = 1.100 Å, r_CF = 1.383 Å, and ∠HCH = 110° 37'.     

Modelling of irradiation-induced reordering in Ni3Al on the basis of the migration of point defects

The kinetics of reordering under irradiation was investigated using a chemical reaction model in the case of vacancy- or interstitial-controlled mechanisms. We have calculated the theoretical temperature dependence of the steady-state degree of order in L1₂ Ni₃Al using the results of recent investigations of point defect properties, in various regimes of point defect annihilation. In a given annihilation regime, the temperature dependence of the steady-state degree of order shows a clear difference between interstitial and vacancy mechanisms. An important result is that a significant reordering can only be related to vacancy diffusion, except when the mutual recombination is the main annihilation process.     

Electronic structure of defects on the surface of graphite

We have investigated the electronic structure of isolated uncharged defects (carbon vacancies, replacement of a carbon atom by an atom of boron or nitrogen) on the (0001) surface of graphite. It is shown that the change in the electronic subsystem of the graphite surface can be determined both by short-range covalent interactions of the defect with carbon atoms and by the extended perturbation of the surface by the charge of the defect. The ranges of action of these two components of the potential of the defect have been estimated. We calculated C-C bond orders for a graphite surface containing a defect.Translated from Teoreticheskaya i Eksperimental'naya Khimiya, Vol. 26, No. 1, pp. 63–66, January–February, 1990.     

Magnetism of substitutional Fe impurities in graphene nanoribbons

Using the generalized gradient approximation to exchange and correlation, we perform density functional calculations on an Fe atom at a single vacancy of graphene nanoribbons. Our results show that, after relaxation, the Fe atom is magnetic, in contrast to the behavior recently found for Fe at a single vacancy of the graphene sheet.     

Cation substitutional chemistry in the r(7)x(12)z-type structure for four lanthanum iodide examples

A series of quaternary lanthanide halide cluster compounds ALa(6)I(12)Z with transition metal interstitials (principally Os) and alkali or alkaline-earth metal cations (A = Na, Mg, Ca, Sr) have been synthesized by high temperature solid state techniques. The compounds were structurally characterized by single crystal and powder X-ray diffraction methods. The new compounds are isotypic (R3, Z = 3) with rhombohedral R(7)X(12)Z (R = Sc, Y, La-Lu; X = Cl, Br, I; Z = transition or main group element) and contain nominally octahedral R(6)X(12) units centered by interstitial Z. Here, the cation (A) rather than the seventh R occupies the isolated position between clusters along c as A(x)R(1-x) with 0 < x 相似文献   

3D analysis of the lattice defects in the gyroid network structure of a block copolymer/homopolymer blend – The line-like defects in the gyroid network structure

The line-shaped defects formed in the gyroid bicontinuous microdomain structures in the solution-casting process of a blend of polystyrene-block-polyisoprene (SI) diblock copolymer and homopolystyrene (HS) were investigated using 3D electron tomography. The inclusion-type lattice defects composed of segregated HS formed during the morphological transition from the preexisted sponge phase to the stable gyroid phase induced by the phase separation between SI and HS. The gyroid grains grew by consuming the sponge phase and expelling excess HS as well as by impinging each other. Consequently, some expelled HS was trapped as the line-like inclusions in the gyroid grains. Structural rearrangement occurred so that low energy planes of the gyroid phase are facing the HS inclusions while the gyroid structure became continuous across/around the inclusions.     

A new type of layer structure defects in chiral smectics

Under a low frequency AC electric field applied to the S_A phase an apparently homogeneous planar structure is obtained which is in fact composed of a system of parallel stripes perpendicular to the smectic layers. This texture persists even in the S*_C phase. The stripes are explained as a contrast on elongated focal conics originating from undulations of smectic layers. Such undulations are formed as a consequence of a reduction in the smectic layer thickness due to the electroclinic effect. The deformation of smectic layers has been calculated on the basis of the elastic free energy associated with their deformation.     

On the relation between conformational changes and electronic structure defects in polypyrrole

Using the semiempirical quantum-chemical AM1 method, the dependence of geometry and electronic structure on the torsion angle δ between neighbouring pyrrole rings of quaterpyrrole in various charge and spin states is investigated. The magnitudes of changes in the electronic structure of polypyrrole caused by geometrical changes of the chain may be comparable with those caused by charge and spin fluctuations. A limited amount of negative charge may be spontaneously stabilized on the polypyrrole chain due to chain deformations caused by solid state influences without any charged dopants. Charge fluctuations are most probably concentrated at nitrogen atoms. N—C bonds are less dependent on δ variations as well as on charge and spin perturbations than C—C bonds.     

锆钛酸镧铅结构象和缺陷

锆钛酸镧铅(简称 PLZT)是一种十分重要的铁电材料.利用 PLZT 透明陶瓷的场致相变,还有可能在图象存贮和显示中得到应用.目前,在利用 La/Zr/Ti 比为7.9/70/30或8/65/35的 PLZT 透明陶瓷制作平面显示器、散射光开关和电光图象存贮器等方面开展了不少工作.PLZT 透明陶瓷的基本组成是锆钛酸铅掺 La 改性,形成(Pb,La)(Zr,Tj)O_3四元系固溶体.化学式倾向于:Pb_(1-x),La_x(Zr_(1-y),Ti_y)_(1-x/4)O_3.其中,La 的浓度 x 可在2～30％之间改变,而 Zr 与 Ti 的相互比例可连续变化.为了提高 PLZT 性能,人们往往通过改变这一比例加以实现.然而,我们的计算结果指出,这一比例的改变将使晶格能发生变化.我们用高分辨电子显微镜在晶格水平上对配比为8/65/35和7.9/70/30的 PLZT 进行了观察,发现配方7.9/70/30有更多的缺陷.计算表明,这可能是由于7.9/70/30的晶格能比8/65/35相对较低造成的.     

Preparation and identification of substitutional solid solutions of the InSb-CdTe system

Substitutional solid solutions with a sphalerite cubic structure have been synthesized on the basis of binary semiconductor compounds InSb and CdTe in their miscibility regions. The solid solutions have been identified using X-ray diffraction, thermal analysis, IR spectra, and electrophysical measurements.     

The interdependence of defects, electronic structure and surface chemistry

In this article we present three diverse applications of first-principles simulations to problems of materials chemistry and chemical physics. Their common characteristic is that they are essentially problems of the relationships among atomic structures and the properties they promote in real materials and real applications. The studies are on transition-metal oxide surface chemistry, the reactivity and electronic structure of sp(2)-bonded carbon systems, and defects and electrochromic properties in WO(3). In these demanding applications we must have concern for how realistic our model systems are and how well current implementations of DFT perform, and we comment on both.     

Stabilization of platinum clusters by substitutional boron dopants in carbon supports

To stabilize platinum clusters on carbon supports, carbon substituted boron dopants were introduced in graphite and fullerene models, and the binding energies of Pt(1) to Pt(6) clusters on the carbon supports were investigated using first-principles density functional theory (DFT) calculations. The adsorption energies of the Pt clusters increased significantly in the presence of boron. The adsorption energies of Ru(1) and Au(1) were also found to dramatically increase in the presence of boron.     

Study of local lattice relaxation of substitutional impurities in silicon and germanium

Local lattice relaxation of substitutional donors in silicon investigated using self‐consistent multiple scattering Xα (MSXα) method within the framework of the standard muffin‐tin potential approximation is extended to substitutional donors in germanium and substitutional acceptors in both silicon and germanium. Incorporating the effect of lattice relaxation surrounding the impurity makes the model suitable for both shallow and deep levels. Chemical trends of some aspects of impurity states, such as local lattice relaxation and charge transfer, of the impurities both in silicon and germanium are inferred. © 2004 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Effect of structural defects on the electronic structure and stability of cubic molybdenum carbide

Institute of Chemistry, Ural Branch, Academy of Sciences of the USSR. Translated from Zhurnal Strukturnoi Khimii, Vol. 30, No. 2, pp. 19–24, March–April, 1989.