Chemically deposited copper oxide thin films: structural, optical and electrical characteristics

Thin films of copper oxide with thickness ranging from 0.05–0.45 μm were deposited on microscope glass slides by successively dipping them for 20 s each in a solution of 1 M NaOH and then in a solution of copper complex. Temperature of the NaOH solution was varied from 50–90°C, while that of the copper solution was maintained at room temperature. X-ray diffraction patterns showed that the films, as prepared, are of cuprite structure with composition Cu₂O. Annealing the films in air at 350°C converts these films to CuO. This conversion is accompanied by a shift in the optical band gap from 2.1 eV (direct) to 1.75 eV (direct). The films show p-type conductivity, 5×10⁻⁴ Ω⁻¹ cm⁻¹ for a film of thickness 0.15 μm. Electrical conductivity of this film increases by a factor of 3 when illuminated with 1 kW m⁻² tungsten halogen radiation. Annealing in a nitrogen atmosphere at temperatures up to 400°C does not change the composition of the films. However, the conductivity in the dark as well as the photoconductivity of the film increases by an order of magnitude. The electrical conductivity of the CuO thin films produced by air annealing at 400°C, is high, 7×10⁻³ Ω⁻¹ cm⁻¹. These films are also photoconductive.     

Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors

Significant progresses have been made in the molecular beam epitaxy (MBE) growth of HgCdTe for high performance infrared photon detectors with the aid of in situ and ex situ characterization techniques. Superlattice interfacial layers compensate in part for the influence of non-ideal CdZnTe substrates and hence improved the material quality as well as yield. They result in photoconductive carrier recombination lifetimes approaching theoretical limits set by the intrinsic radiative and Auger recombination mechanisms for 8–14 μm long-wavelength infrared HgCdTe. Very high composition and thickness uniformities have also been achieved. However, the Urbach tail energy, which is associated with structural disorder, was found to be non-uniform for both large wafer (up to 20 × 20 mm²) and very small area (down to 200 × 200 μm²). After several years of improvements in MBE HgCdTe growth techniques, substrates once again have become a bottleneck to further improvements.     

Second harmonic generation from precise diamond blade diced ridge waveguides

Carbon ion irradiation and precise diamond blade dicing are applied to fabricate Nd:GdCOB ridge waveguides. The propagation properties of the fabricated Nd:GdCOB waveguides are investigated through experiments and theoretical analysis. Micro-Raman analysis reveals that the Nd:GdCOB crystal lattice expands during the irradiation process. Micro-second harmonic spectroscopic analysis suggests that the original nonlinear properties of the Nd:GdCOB crystal are greatly enhanced within the waveguide volume. Under pulsed 1064 nm laser pumping, second harmonic generation (SHG) at 532 nm has been achieved in the fabricated waveguides. The maximum SHG conversion efficiencies are determined to be ～ 8.32 %·W^-1 and ～ 22.36 %·W^-1 for planar and ridge waveguides, respectively.     

Modal dispersion phase-matched frequency doubling in composite planar waveguide using ion-exchanged glass and optically nonlinear poled polymer

We report on the fabrication and characterization of composite planar waveguides for frequency doubling. Modal dispersion phase matching is obtained for TM₀ fundamental and (TM₁, TM₂) harmonic wavelength. The experimental conversion efficiency was η=0.45% with an SH wavelength of 0.516 μm for TM₀^ω–TM₂^2ω mode conversion. The phase-matching condition can be fulfilled by adjusting the diffusion time of ion-exchange and the thickness of the polymer layer.     

Limiting efficiencies of second-harmonic generation and cascaded χ processes in quadratically nonlinear photonic nanowires

Quadratically nonlinear waveguides with subwavelength core dimensions are shown to provide limiting efficiencies of second-harmonic generation and three-wave mixing, as well as cascaded χ⁽²⁾ nonlinear-optical interactions. Small-core waveguides made of high-χ⁽²⁾ materials, such as gallium arsenide and indium phosphide, are shown to allow anomalous dispersion to be achieved within the range of wavelengths from 1.3 to 2.0 μm, with the wavelength of zero group-velocity dispersion controlled by the size of the waveguide core.     

Near-infrared absorptions of monomethylhydrazine

The peak absorption coefficients for two near-infrared absorptions of monomethylhydrazine, CH₃-N₂H₃, (MMH) were measured. Absorption bands located at 1.524 μm (6560 cm^-1), 1.557 μm (6423 cm^-1), and 1.583 μm (6316 cm^-1) are assigned to the υ = 2 overtones of the infrared N-H stretching fundamentals at 3317, 3245 and 3177 cm^-1. An absorption band located at 1.04 μm (9620±100 cm^-1) is assigned to the υ = 3 overtone of one of these fundamentals. The peak absorption coefficients (₁₀) at 1.524 μm (6560±20 cm^-1) and 1.04 μm (9620±100 cm^-1) are 31 × 10^-3 and 0.97 × 10^-3 (cm atm)^-1, respectively. Uncertainties in these coefficients were estimated to be less than ±20% due primarily to uncertainties in the partial vapor pressure of MMH.     

Domain wall pinning in polycrystalline perovskite La0.7Sr0.3MnO3

Reversible and irreversible domain wall (DW) motions have been investigated in La_0.7Sr_0.3MnO₃ ceramic samples using frequency-response complex permeability with various amplitudes of AC field. We also examine the effects of temperature in the range from 293 to 368 K and transverse DC magnetic field with a maximum of 4.40×10⁵ A/m on the real part of permeability (μ′). Two relaxations corresponding to reversible wall motions and domain rotations occur in low and high frequency regions, respectively. The irreversible DW displacements can be activated as the amplitude larger than the pinning field of 3 A/m, leading to an increase in μ′. The μ′ obeys a Rayleigh law at the temperature below 343 K or under DC field of less than 4.22×10⁴ A/m. The Rayleigh constant η increases from 5.45×10⁻² to 1.54×10⁻¹ (A/m)⁻¹ as the temperature rises from 293 to 343 K, and η decreases from 5.58×10⁻² to 3.67×10⁻² (A/m)⁻¹ with increasing DC field from 1.99×10³ to 4.22×10⁴ A/m.     

基于石墨烯-钙钛矿量子点场效应晶体管的光电探测器

以等离子增强化学气相沉积法制备的石墨烯作为导电沟道材料,将其与无机CsPbI_3钙钛矿量子点结合,设计并制备了石墨烯-钙钛矿量子点场效应晶体管光电探测器.研究和分析了石墨烯作为场效应晶体管的电学特性及其与钙钛矿量子点结合作为光电探测器的光电特性.结果表明,石墨烯在场效应晶体管中表现出良好的电学性质,其与钙钛矿量子点的结合对波长为400 nm的光辐射具有明显的光响应,在光强为12μW时器件光生电流最大为64μA,响应率达6.4 A·W~(-1),对应的光电导增益和探测率分别为3.7×10~4,6×10~7Jones(1 Jones=1 cm·Hz~(1/2)·W~(-1)).     

Outer curvature and conformal geometry of an imbedding

The differential geometry of an imbedded (e.g. string or membrane world sheet) surface in a higher-dimensional background is shown to be conveniently describable (except in the null limit case) in terms of what are designated as its first, second, and third fundamental tensors, which will have the respective symmetry properties η_μν = η_(μν) as a trivial algebraic identity, K_μν^ρ = K_(μν)^ρ as the “generalised Weingarten identity”, which is the (Frobenius type) integrability condition for the imbedding, and Ξ_λμν^ρ = Ξ_(λμν)^ρ as a “generalised Codazzi equation”, which depends on the background geometry being flat or of constant curvature, needing replacement by a more complicated expression for a generic value of the background curvature B_κλ^μ_ν. The “generalised Gauss equation” expressing the dependence on this background curvature of the internal curvature tensor R_κλ^μ_ν of the imbedded surface is converted into terms of the first and second fundamental tensors, and it is thereby demonstrated that the vanishing of the (conformally invariant) “conformation tensor”, i.e. the trace free part C_μν^ρ of the second fundamental tensor K_μv^ρ, is a sufficient condition for conformal flatness of the imbedded surface (and thus in particular for the vanishing of its (Weyl type) conformal curvature tensor C_κλ^μ_ν) provided the background is itself conformally flat. In a trio of which the first two members are the generalised Gauss and Codazzi equations, the “third” member is shown to give an expression in terms of C_μν^ρ for the (trace free, conformally invariant) “outer curvature” tensor Ω_κλ^μ_ν whose vanishing is the condition for feasibility of the natural generalisation of the Walker frame transportation ansatz. The vanishing of C_μν^ρ is shown to be sufficient in a conformally flat background for the vanishing also of Ω_κλ^μ_ν.     

Electro-optical characteristics and field-emission properties of reactive DC-sputtered p-CuAlO2+x thin films

P-type transparent-conducting CuAlO_2+x thin films were deposited on silicon and glass substrates by reactive direct current sputtering of a prefabricated metal powder target having 1:1 atomic ratio of Cu and Al in oxygen-diluted argon atmosphere. XRD spectrum confirmed the proper phase formation of the material. UV-Vis-NIR spectrophotometric measurements showed high transparency of the films in the visible region with direct and indirect band gap values around 3.90 and 1.89 eV, respectively. The room temperature conductivity of the film was of the order of 0.22 S cm⁻¹ and the activation energy was 0.25 eV. Seebeck coefficient at room temperature showed a value of +115 μV/K confirming the p-type nature of the film. Room temperature Hall effect measurement also indicated positive value of Hall coefficient with a carrier concentration 4.4×10¹⁷ cm⁻³. We have also observed the low macroscopic field emission, from the wide band gap p-CuAlO_2+x thin film deposited on glass substrate. The emission properties have been studied for different anode-sample spacing. The threshold field was found to be as low as around 0.5–1.1 V/μm. This low threshold is attributed primarily to the internal nanostructure of the thin film, which causes considerable geometrical field enhancement inside the film as well as at the film/vacuum interface.     

Electronic and photovoltaic properties of p-Si/C70 heterojunction diode

Electronic and photovoltaic properties of p-Si/C₇₀ heterojunction diode have been investigated. The ideality factor n and barrier height φ_b values of the diode were found to be 1.86 and 0.69 eV, respectively. The diode indicates a non-ideal current–voltage behaviour due to the ideality factor being higher than unity. This behaviour results from the effect of series resistance and the presence of an interfacial layer. The series resistance R_S and ideality factor n values were determined using Cheng's method and the obtained values are 2.21×10⁵ Ω and 1.86, respectively. The device shows photovoltaic behaviour with a maximum open-circuit voltage of 0.22 V and a short-circuit current of 0.35 μA under 6 mW/cm² light intensity.     

High-resolution measurements of molecular absorption line profiles at 10 micrometers

Absorption line profiles of CO₂, C₂H₄ and NH₃ have been measured around a wavelength of 10 μm and under various conditions using a passive heterodyne detection technique with a resolution of 6 × 10^-4 cm^-1.     

Carrier relaxation in InGaAs

A modelocked Nd: YAG pumped optical parametric amplifier providing 35 ps pulses in the wavelength range λ = 1.45−2.1 μm has been used to study photoexcited carrier recombination in InGaAs. At carrier densities in excess of 10¹⁸ cm^-3 Auger processes are found to dominate the carrier recombination. An Auger rate of 2.5±0.5×10^-28 cm⁶ s^-1 is determined.     

The geometry of the SU(2) Kepler problem

The SU(2) Kepler problem is defined and analyzed, which is a Hamiltonian system reduced from the conformal Kepler problem on T^*( ⁸ − {0}) by the use of the symplectic SU(2) action lifted from the SU(2) left action on the SU(2) bundle ⁸ − {0} → ⁵ − {0}. This reduced system has a parameter μ ε su(2) coming from the value of the moment map associated with the symplectic SU(2) action. If μ ≠ 0, the phase space of this system have a bundle structure with base space T^*( ⁵ − {0}) and fibre S². The fibre, a (co)adjoint orbit through μ for SU(2), represents the internal degrees of freedom, called the isospin, of the particle of this system. The SU(2) Kepler problem with μ ≠ 0 is then interpreted as describing the motion of a classical particle with isospin in the Newtonian potential plus a specific repulsive potential together with a Yang-Mills field. This Yang-Mills field is to be referred to as BPST Yang's monopole field in ⁵ − {0};, since it becomes the Belavin-Polyakov-Schwartz-Tyupkin instanton, restricted on S⁴. If μ = 0, the SU(2) Kepler problem reduces to the ordinary Kepler problem. Like the ordinary Kepler problem, the Hamiltonian flows of the SU(2) Kepler problem of negative energy are all closed. It is shown in an explicit manner that the energy manifolds and isoenergetic orbit spaces for the SU(2) Kepler problem of negative energy are both homogeneous manifolds on which SU(4) acts transitively to the right; those homogeneous manifold are classified into two, according as the parameter μ is zero or not. For a certain value of μ, however, they contracts to the manifold which represents the set of all the equilibrium states. The isoenergetic orbit spaces are finally shown to be symplectomorphic to certain Kirillov-Konstant-Souriau coadjoint orbits for U(4), if μ is not the exceptional value mentioned above.     

Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors

Extended long wavelength response to 200 μm (50 cm⁻¹) has been observed in Ge:Sb blocked impurity band (BIB) detectors with N_D1×10¹⁶ cm⁻³. The cut-off wavelength increases from 150 μm (65 cm⁻¹) to 200 μm (50 cm⁻¹) with increasing bias. The responsivity at long wavelengths was lower than expected. This can be explained by considering the observed Sb diffusion profile in a transition region between the blocking layer and active layer. BIB modeling is presented which indicates that this Sb concentration profile increases the electric field in the transition region and reduces the field in the blocking layer. The depletion region consists partially of the transition region between the active and blocking layer, which could contribute to the reduced long wavelength response. The field spike at the interface is the likely cause of breakdown at a lower bias than expected.     

Microwave studies of the superconducting state in Rb3C60

Methods of electron-spin resonance (ESR) and direct, non-linear field-modulated microwave absorption (FMMA) were applied for the measurements in low- and high-purity samples of rubidium-doped fullerene, Rb₃C₆₀. The coexistence of the normal strong ESR signals and regular series of weak absorption lines similar to those seen in systems of Josephson junctions was observed in the high-purity sample. The possible influence of the vortex lattice on the ESR signals was also studied. We determined from FMMA investigations using the Portis model the critical field μ₀H^* = 40 μT, the depinning current density J_c^*(μ₀H₀ = 1 mT) 4 × 10⁸ A/m² in low magnetic field and J_c^*(μ₀H₀ > 100 mT) 1.6 × 10⁸ A/m² in higher fields. These values were generally one order of magnitude higher than the highest corresponding values previously observed in high-temperature superconductors (HTS's).     

Renormalization group invariant matrix elements of ΔS=2 and ΔI=3/2 four-fermion operators without quark masses

We introduce a new parameterization of four-fermion operator matrix elements which does not involve quark masses and thus allows a reduction of systematic uncertainties. In order to simplify the matching between lattice and continuum renormalization schemes, we express our results in terms of renormalization group invariant B-parameters which are renormalization-scheme and scale independent. As an application of our proposal, matrix elements of ΔI=3/2 and SUSY ΔS=2 operators have been computed. The calculations have been performed using the tree-level improved Clover lattice action at two different values of the strong coupling constant (β=6/g²=6.0 and 6.2), in the quenched approximation. Renormalization constants and mixing coefficients of lattice operators have been obtained non-perturbatively. Using lowest order χPT, we also obtain ππ|O₇|K^NDR_I=2=(0.11±0.02) GeV⁴ and ππ|O₈|K^NDR_I=2=(0.51±0.05) GeV⁴ at μ=2 GeV.     

Effects of substitution of Ti for Fe in BiFeO3 films prepared by sol–gel process

Ti substituted BiFe_1−xTi_xO_3+δ films have been prepared on indium–tin oxide (ITO)/glass substrates by the sol–gel process. The films with x=0.00–0.20 were prepared at an annealing temperature of 600 °C. X-ray diffraction patterns indicate that all films adopt R3m structure and the films with x=0 and 0.10 show pure perovskite phase. Cross-section scanning shows the thickness of the films is about 300 nm. Through 0.05 Ti substitution, the 2P_r increases to 8.30 μC/cm² from 2.12 μC/cm² of the un-substituted BiFeO₃ film and show enhanced ferroelectricity at room temperature. The 2P_r values are 2.63 and 0.44 μC/cm² for the films with x=0.01 and 0.2, respectively. Moreover, the films with x=0.05 and 0.10 show enhanced dielectric property since the permittivity increases near 150 at the same measuring frequency. Through the substitution of Ti, the leakage conduction is reduced for the films with x=0.05–0.20.     

A pulsed laser source using stimulated Raman scattering and difference frequency mixing: Remote sensing of methane in air

Mid-infrared radiation at 3.43 μm is generated by difference frequency mixing a 1.064 μm Nd:YAG laser with a methane gas Raman shifted Nd:YAG (1.064 μm) laser at 1.54 μm in KTiOAsO₄ (KTA). Using this pulsed (7 ns), moderate energy (1 mJ) source we demonstrate the optical detection of methane in air and measure an absorption coefficient of 1.2 cm⁻¹atm⁻¹. Additional source characteristics include an intrinsic wavelength stability defined by the methane Raman vibrational frequency and a moderate linewidth (1.5 cm⁻¹).