气氛对MnCr2O4尖晶石纳米线生长的影响

建立了一种在氮气和氢气的还原性混合气氛和1100 ℃条件下加热商业不锈钢箔(304)制备MnCr2O4尖晶石纳米线的简单方法, 并研究了不同气氛对纳米线生长的影响. 研究发现, 混合气体中氢气含量的变化会影响纳米线的形貌和产率; 而氧化性气氛(如空气)下则得不到纳米线. 在还原性气氛下, Mn和Cr原子可以和反应室内残留的痕量氧反应生成MnCr2O4尖晶石, 而Fe和Ni原子不能被氧化, 但是Fe和Ni可以起到催化纳米线生长的作用, 纳米线的生长机理属于自催化性的气-液-固(VLS)机制.     

阳极氧化铝模板法可控制备金属纳米线和纳米管阵列的生长机制

利用阳极氧化铝模板(AAO)进行Ni的电化学沉积, 通过在溶液中引入螯合剂控制电解质的有效浓度和电沉积的过电位, 实现了Ni纳米线和纳米管阵列的可控制备. 通过分析电沉积过程中纳米线和纳米管在不同位置生长速率(侧壁(Vw)和底端(Vb))的控制因素, 我们提出了纳米线和纳米管生长的可能机制. 当电解质浓度高而还原电位更负(如-1.5 V)时, 或者当电解质浓度低而还原电位较负(如-0.5 V)时, Vw>Vb, 可以获得Ni纳米管阵列; 当电解质浓度高而还原电位较负(如-0.5 V)时, 或者当电解质浓度低而还原电位更负(如-1.5 V)时, Vw≈Vb, 可以获得Ni纳米线阵列. 这种生长机制适用于多种金属纳米管或者纳米线阵列的可控制备.     

直流电弧自催化合成β-SiC纳米线

采用C,Si和SiO₂为反应原料,利用直流电弧法制备出长直的β-SiC纳米线。纳米线的直径为100～200 nm,长度为10～20 μm,并且沿着<111>方向生长。通过X射线衍射(XRD)、扫描电子显微术(SEM)、透射电子显微术(TEM)、拉曼光谱等手段,对β-SiC纳米线进行表征。探讨了β-SiC纳米线自催化气-液-固(VLS)生长机制。     

β-FeOOH纳米线的自排列及形成机理研究

通过无机铁(Ⅲ)盐的水解,在常温常压条件下制备了β-FeOOH纳米线,利用X射线粉末衍射仪(XRD)和透射电子显微镜(TEM)对其结构及形貌进行了表征. 结果表明,产物是结晶性良好的四方相β-FeOOH 纳米线,直径约 60 nm,长度为 4~5 μm,沿［001］方向生长. 根据实验结果讨论了β-FeOOH纳米线的生长机理. 而且,这些纳米线可以自发地垂直或平行地排列在一起,形成特殊的图案,这可能是由于纳米线之间的磁相互作用产生的.     

β-FeOOH纳米线的制备及表征

通过无机铁(III)盐的水解在常温条件下制备了β-FeOOH 纳米线, 并用透射电子显微镜(TEM)、高分辨透射电镜(HRTEM)、X射线衍射(XRD)及选区电子衍射(SAED)对其形貌及结构进行了表征. 电镜结果表明, 所得到的纳米线直径约 60 nm, 长度为4～5 μm, 且沿[001]方向生长. XRD结果表明纳米线为四方相β-FeOOH, 在常温下结晶性良好. 研究表明FeCl₃浓度对纳米线生长有很大影响, 只有当FeCl₃浓度合适时, 才能制备出高质量的纳米线.     

Mn掺杂SnO_2一维纳米结构的制备、形貌及光学性质

用化学气相沉积(CVD)法制备了Mn掺杂的SnO2一维纳米结构(纳米线及纳米带),X射线衍射(XRD)显示样品为金红石型SnO2晶体,其生长机理可分别归结为气-液-固(VLS)和气-固(VS)机理,生长温度和气态原料浓度的差别是造成样品形貌及生长机理不同的主要原因.样品的拉曼谱出现了500、543、694和720cm-1四个新拉曼谱峰,分别是由活性的红外模和表面模引起的.纳米线及纳米带发光峰位于520nm处,发光强度随样品中氧空位的增减出现由强到弱的变化.     

柔性不锈钢基底上一维TiO_2纳米线薄膜的制备及表征

采用直流磁控溅射的方法在柔性不锈钢基底(50μm)上沉积纯钛薄膜,后在NaOH碱溶液中经水热法制备了非钛基大长径比的一维TiO2纳米线薄膜,并通过场发射扫描电子显微镜(FESEM)、X射线衍射(XRD)、透射电子显微镜(TEM)以及光电化学的方法对不锈钢基一维TiO2纳米线薄膜进行了表征.结果表明,纯钛薄膜的致密度、结晶性能以及与基底的结合强度均随衬底温度的升高而加强;在10mol·L-1NaOH浓度下,生长一维TiO2纳米线结构的适宜温度为130-150℃;TiO2纳米线长度达到几个微米,直径在10-30nm之间,并且相互交叉生长,构成一个三维网络结构.此外,在Na2SO4溶液中对TiO2纳米线薄膜进行了线性扫描和瞬态光电流测试,结果表明,一维TiO2纳米线薄膜电极较TiO2纳米颗粒电极表现出更优异的光电化学性能.这种磁控溅射与水热反应相结合的方法,为非钛异质基底上制备一维TiO2纳米线薄膜提供了新的思路.     

泡沫镍负载的NiCo2O4纳米线阵列电极的超级电容性能

采用无模板自然生长法制备了泡沫镍支撑的NiCo₂O₄纳米线阵列电极, 利用扫描电镜(SEM)和透射电镜(TEM)观测了纳米线的表面形貌, 利用X射线衍射(XRD)分析了纳米线的结构, 通过循环伏安、恒流充放电和交流阻抗测试了电极的超级电容性能. 结果表明: NiCo₂O₄纳米线直径约为500-1000 nm、长度约为10 μm, 垂直且密集地生长在泡沫镍骨架上. 纳米线阵列电极的放电比容量高达741 F·g^-1, 循环420次后比容量仍保持在655 F·g^-1, 电化学阻抗测试其电荷传递电阻仅为0.33 Ω, 420次循环后电荷传递电阻仅增加0.06 Ω.     

桥连氧化钨纳米线的可控合成及气敏性质

氧化钨WO_(3-x) (0≤x1)具有丰富的氧化态、亚化学计量比晶相以及可逆的光致/电致变色特性,纳米线具有高比表面积和准一维单晶载流子传输通道,WO_(3-x)纳米线结合了上述两者的优异特性,在智能玻璃、能源转换与存储器件和气体传感器等领域有广阔的应用前景。本文从WO_(3-x)的基本性质出发,分析了液相法和气相法(气-液-固、气-固、热氧化)纳米线生长的机制及特点。其中,热氧化法无需催化剂,有望解决纳米线应用的器件化瓶颈,在500°C下即可实现纳米线尺寸与生长位置的可控生长,实现桥连纳米线器件的高效、原位集成。随后,本文综述了桥连WO_(3-x)纳米线器件在NO_x等气体分子检测中的应用进展,梳理了桥连WO_(3-x)纳米线器件在低功耗、高灵敏气体分子检测中的应用,以期为今后高灵敏、低功耗、高集成的氧化物桥连纳米线器件的开发提供参考。     

溶胶凝胶模板法制备羟基磷灰石纳米线

以氯化钙和五氧化二磷的醇溶液为前驱体溶液,多孔阳极氧化铝(AAO)膜为模板,通过溶胶凝胶-模板法成功制备出羟基磷灰石(Ca10(PO4)6(OH)2,HAP)纳米线;利用扫描电镜、能量色散谱仪、透射电镜、X射线衍射仪及傅立叶变换红外光谱仪等分析了产物的组成和微结构;并讨论了纳米线的生长机理.结果表明,所制备的羟基磷灰石纳米线直径约为50nm、长度达20μm,分别与模板的孔径和厚度一致.     

Synthesis, Structure and Growth Mechanism of ZnS Nanowires with High Aspect Ratio

ZnS nanowires were successfully synthesized through the direct reaction of Zn and S vapor via carbon-assisted chemical evaporation deposition method with Au catalyst. The investigations indicated that the size of ZnS nanowires with a diameter of approximately 40 nm was uniform along the axis of the wire and the surfaces were slick. The ZnS nanowire with a hexagonal wurtzite structure was a typical single crystalline structure. HRTEM and SEAD results demonstrated that the nanowire grew along [100] direction, which was different from the common direction reported in literatures. The growth of nanowires was controlled by vapor-liquid-solid (VLS) mechanism.     

Laser Assisted Catalytic Growth of ZnS/CdSe Core‐Shell and Wire‐Coil Nanowire Heterostructures

ZnS/CdSe core‐shell and wire‐coil nanowire heterostructures have been synthesized by chemical vapor deposition assisted with pulsed laser ablation. Measurements from high‐resolution transmission electron microscopy and selected area electron diffraction have revealed that both ZnS/CdSe core‐shell and wire‐coil nanowires are of single‐crystalline hexagonal wurtzite structures and grow along the [0001] direction. While the lattice parameters of ZnS and CdSe in the core‐shell nanowires are nearly equal to those of bulk ZnS and CdSe, change of the lattice parameters in the CdSe‐coil is attributed to the doping of Zn into CdSe, resulting in the relaxation of compressive strain at the interface between CdSe‐coil and ZnS‐wire. Composition variation across the interfacial regions in the ZnS/CdSe nanowire heterostructures ranges only 10–15 nm despite the pronounced lattice mismatch between ZnS and CdSe by ?11%. Growth mechanisms of the ZnS/CdSe nanowire heterostructures are discussed.     

六方相ZnS单晶纳米线束的合成及其光学性质研究

利用丙烯酸和丙烯酸锌的共聚物作为前驱体，硫脲作为硫源，在溶剂热条件下于170 ℃反应96 h得到了ZnS纳米线束。透射电子显微镜(TEM)，选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)测试表明这些线束是由单晶纳米线组装而成。该纳米结构具有很好的光学性质。傅立叶变换红外光谱(FTIR)结果证明纳米线被聚合物包裹。此外，对纳米线束的生长机理进行了简要讨论。     

大面积Bi单晶纳米线阵列的制备

在有序的氧化铝模板(AAO)的孔洞中, 采用电化学沉积工艺成功地制备了准金属Bi纳米线有序阵列. 使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)及高分辨电子显微镜(HRTEM)对样品的结构和形貌进行了表征. XRD结果表明, 所制备的铋样品为六方相, 且沿[110]方向有很好的生长取向; FE-SEM图片清晰地说明铋纳米线阵列是大面积、填充率高和高度有序的; TEM的结果显示纳米线直径均匀、表面光滑且长径比大; HRTEM图片中清晰的晶格条纹和选区电子衍射(SAED)结果表明纳米线是单晶.     

Self-organized hierarchical ZnS/SiO(2) nanowire heterostructures

Novel hierarchical heterostructures formed by wrapping ZnS nanowires with highly dense SiO(2) nanowires were successfully synthesized by a vapor-liquid-solid process. The as-synthesized products were characterized using X-ray diffraction, scanning electron microscopy and transmission electron microscopy equipped with an energy-dispersive X-ray spectrometer. Studies indicate that a typical hierarchical ZnS/SiO(2) heterostructure consists of a single-crystalline ZnS nanowire (core) with diameter gradually decreasing from several hundred nanometers to 20 nm and adjacent amorphous SiO(2) nanowires (branches) with diameters of about 20 nm. A possible growth mechanism was also proposed for the growth of the hierarchical heterostructures.     

金纳米线阵列制备及其光谱特性

利用电化学沉积方法在重离子径迹模板中制备出直径从45 nm到200 nm, 长径比达700的金纳米线阵列, 利用扫描电子显微镜(SEM)和X射线衍射(XRD)对所制备金纳米线的形貌及晶体结构进行分析, 结果表明, 在1.5 V(无参比电极)沉积电压下所制备出的直径为200 nm金纳米线沿[100]晶向具有较好择优取向. 利用紫外-可见光谱(UV-Vis)对镶嵌在透明模板中平行排列的金纳米线阵列光学特性进行研究, 发现金纳米线直径为45 nm时, 其紫外可见光谱在539 nm处有强烈吸收峰, 随着金纳米线直径增加, 吸收峰红移, 当金纳米线直径达到200 nm时, 其吸收峰峰位移至700 nm. 结合金纳米颗粒相关表面等离子体共振吸收效应对实验结果进行了讨论.     

Crystal orientation-ordered ZnS nanowire bundles

We report a novel approach for growing aligned and orientation-ordered ZnS nanowires. Our method relies on a buffer layer of CdSe grown on a Si(111) substrate, on which ZnS nanowires are grown. The growth process of the nanowire bundles is presented. The technique demonstrated could be an effective pathway for growing patterned, aligned, size-controlled, and orientation-ordered ZnS nanowires.     

Synthesis and characterization of indium-doped ZnO nanowires with periodical single-twin structures

In-doped ZnO (IZO) nanowires have been synthesized by a thermal evaporation method. The morphology and microstructure of the IZO nanowires have been extensively investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The products in general contain several kinds of nanowires. In this work, a remarkable type of IZO zigzag nanowire with a periodical twinning structure has been investigated by transmission electron microscopy (TEM). HRTEM observation reveals that this type of IZO nanowire has an uncommonly observed zinc blend crystal structure. These nanowires, with a diameter about 100 nm, grow along the [111] direction with a well-defined twinning relationship and a well-coherent lattice across the boundary. In addition, an IZO nanodendrite structure was also observed in our work. A growth model based on the vapor-liquid-solid mechanism is proposed for interpreting the growth of zigzag nanowires in our work. Due to the heavy doping of In, the emission peak in photoluminescence spectra has red-shifted as well as broadened seriously.     

Polymorph-tuned synthesis of α- and β-Bi2O3 nanowires and determination of their growth direction from polarized Raman single nanowire microscopy

We report polymorph-tuned synthesis of α- and β-Bi(2)O(3) nanowires and their single nanowire micro-Raman study. The single crystalline Bi(2)O(3) nanowires in different phases (α and β) were selectively synthesized by adjusting the heating temperature of Bi precursor in a vapor transport process. No catalyst was employed. Furthermore, at an identical precursor evaporation temperature, α- and β- phase Bi(2)O(3) nanowires were simultaneously synthesized along the temperature gradient at a substrate. The growth direction of α-Bi(2)O(3) nanowires was revealed by polarized Raman single nanowire spectra. For thin β-Bi(2)O(3) nanowires with a very small diameter, the polarized Raman single nanowire spectrum was strongly influenced by the shape effect.     

具有一维梯度直径的金属银纳米线的制备与结构表征

Since the conceptoffunctionally graded m aterials(FG M)is proposed[1,2],m uch attention has been paid toFG M studies.Generally,FG M s were designed with thegradientdistribution ofcom position and structure,andthe graded structure of FG M is achieved by acom position gradient from one side of m aterials to theother,resulting in gradientproperties.Itis well鄄knownthat properties of nanom eter鄄sized m aterials stronglydepend on their sizes.Such size effect offers a newconcept for the design…