n-SiC的电子拉曼散射及二级拉曼谱研究

研究了利用离子注入法得到的掺氮n-SiC拉曼光谱. 理论线形分析表明,与4H-SiC相比,6H-SiC中LO声子等离子体激元耦合模(LOPC模)拉曼位移随自由载流子浓度变化较小. 5145nm激发光下得到的电子拉曼散射光谱表明,k位处由1s(A₁)到1s(E)的能谷轨道跃迁带来的拉曼谱6H-SiC中有四条,4H-SiC中有二条;高频6303及635cm^-1处观察到的谱线被认为与深能级缺陷有关. 最后,利用纤锌矿型结构二级拉曼散射选择定则指认了6 关键词： 碳化硅 电子拉曼散射 轨道能谷分裂 倍频谱     

层状铜氧化物超导体的有限温Landau理论

采用有限温的Landau理论来描述层状铜氧化物超导体中的竞争序和层间Josephson隧道效应 .通过讨论单层和双层铜氧面结构的超导体中序参量的相图，并与实验相比较来确定理论中 唯象参数的合理范围，同时也解释了在最佳掺杂区附近赝能隙的转变温度远高于与之对应的 能量尺度这个颇具疑惑的实验事实.再将理论应用到多层的超导体系，计算了超导转变温度 T_c随体系层数N的变化，在合理的参数空间里，最佳掺杂区附近的计算结果与现 有的实验相一致，而在极度欠掺杂区和极度过掺杂区的单调性上升可作为理论预言 关键词： 竞争序 层间Josephson隧道效应 电荷不平衡 赝能隙     

关于高T_c氧化物超导体的能隙及其超导态下残余电子比热问题

本文讨论了自由载流子负 U 中心相互作用机制下高 T_c 氧化物超导体的能隙和超导态下极低温时残余线性电子比热项的问题。对 La-Sr-Cu-O 和 Y-Ba-Cu-O 两个系统所得的能隙的数值计算结果分别为2△(0)/k_BT_c=4.00和4.22;两系统的超导态下极低温时残余线性电子比热项的电子比热系数分别为 C_1=2.25和3.04 mJ/mol·K^2.这些数值计算结果与实验数据比较大体一致.     

p型掺杂Si/Ge量子点的电子拉曼散射(英文)

在本文中我们首次报道了p型掺杂的自组织Si/Ge量子点中空穴能级子带间的电子拉曼散射,此电子跃迁的能量为105meV。Si/Ge量子点Ge Ge模的共振拉曼散射表明此空穴能级间的电子拉曼散射与Γ点附近的E0(≈2.52eV)发生了共振,而E1的能量小于2.3eV.变温实验和偏振实验进一步证实了我们的指认。所有观测的实验数据与6 bandk·p能带结构理论的计算结果吻合得很好。     

关联电子体系中电子和磁的拉曼散射

周期结构的晶格振动和分子的振动或转动谱,可以看作材料的特征指纹,拉曼散射正是探测这些振动的非常灵敏和有效的技术,因此它已经被广泛地应用到基础研究和工业生产的各个方面.而原则上,通过固体中的自由载流子或自旋与光的非弹性散射过程,人们也可以获得关于电子和磁激发的重要信息.文章对电子和磁的拉曼散射基本概念作了简要介绍,并对一些关联电子体系中的拉曼实验作了简要综述.特别是在非常规超导中,拉曼散射在确定超导能隙的大小和各向异性以及配对对称性等方面发挥了独特的作用.     

关联电子体系中电子和磁的拉曼散射

周期结构的晶格振动和分子的振动或转动谱,可以看作材料的特征指纹,拉曼散射正是探测这些振动的非常灵敏和有效的技术,因此它已经被广泛地应用到基础研究和工业生产的各个方面.而原则上,通过固体中的自由载流子或自旋与光的非弹性散射过程,人们也可以获得关于电子和磁激发的重要信息.文章对电子和磁的拉曼散射基本概念作了简要介绍,并对一些关联电子体系中的拉曼实验作了简要综述.特别是在非常规超导中,拉曼散射在确定超导能隙的大小和各向异性以及配对对称性等方面发挥了独特的作用.     

用激光拉曼散射法测量电子线路板中元件的温度

本文针对电子学中电子线路板上元器件通电后要精确测量其温度的问题引入了激光拉曼散射光谱技术,介绍了该方法在无损伤探测电子元器件(通各种电流后)表面温度方面的应用,为设计电子线路板散热问题提供了可参考的数据。并开拓了激光拉曼散射光谱技术在电子学中的应用,也同时为测量复杂结构物体表面温度提供了较好的方法。     

球型量子点中的电子拉曼散射

研究了球型半导体量子点中的电子拉曼散射.讨论了初态为导带全满,价带全空时的电子跃迁过程,给出了电子拉曼散射的跃迁选择定则。通过计算GaAs和CdS材料球型量子点中电子及空穴参与拉曼散射的微分散射截面,分别比较了电子和空穴的不同影响,发现电子对拉曼散射的贡献要远大于空穴的贡献;当选取不同量子点半径时,拉曼散射微分散射截面变化也非常明显;量子点尺寸不变的条件下,改变入射光子能量,可以发现,微分散射截面随入射光子能量增大而减小。     

拉曼对光散射的实验研究

介绍了拉曼的生平和对物理学的主要贡献，回顾了他从观察海水的蓝色人手，继而发现气体、液体对光的散射规律，一直到发现物质的散射光不仅包含原来的波长，而且还包括与原入射光不同的其他波长的散射的研究过程，并讨论了他的成功对我们的启示．     

Electron-phonon coupling in cuprate and iron-based superconductors revealed by Raman scattering

Electron-phonon coupling （EPC） in cuprate and iron-based superconducting systems, as revealed by Raman scat- tering, is briefly reviewed. We introduce how to extract the coupling information through phonon lineshape. Then we discuss the strength of EPC in different high-temperature superconductor （HTSC） systems and possible factors affecting the strength. A comparative study between Raman phonon theories and experiments allows us to gain insight into some crucial electronic properties, especially superconductivity. Finally, we summarize and compare EPC in the two existing HTSC systems, and discuss what role it may play in the HTSC.     

Doping and temperature dependence of electronic Raman response in cuprate superconductors

The doping and temperature dependence of the electronic Raman response in cuprate superconductors is studied within the kinetic energy driven superconducting mechanism. It is shown that the temperature dependent depletion at low-energy shifts is faster in the B1g symmetry than in the B2g symmetry. In analogy to the domelike shape of the doping dependent superconducting transition temperature, the maximal peak energy in the B2g channel occurs around the optimal doping, and then decreases in both underdoped and overdoped regimes. Moreover, the overall density of Cooper pairs increases with increasing doping in the underdoped regime.     

Electronic Raman scattering in double semi-parabolic quantum wells

The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-x As is investigated numerically with the effective-mass approximation. The dependence of the differential cross-section on structural parameters such as the barrier width and the well widths is studied. Our results indicate that the electronic Raman scattering is affected by the geometrical size and can be negligible in the symmetric double-well case.     

Electronic Raman response in electron-doped cuprate superconductors

The electronic Raman response in the electron-doped cuprate superconductors is studied based on the t-t^′-J model. It is shown that although the domelike shape of the doping dependent peak energy in the B2g symmetry is a common feature for both electron-doped and hole-doped cuprate superconductors, there are pronounced deviations from a cubic response in the B1g channel and a linear response in the B2g channel for the electron-doped case in the low energies. It is also shown that these pronounced deviations are mainly caused by a nonmonotonic d-wave gap in the electron-doped cuprate superconductors.     

Extinction of quasiparticle scattering interference in cuprate superconductors

The quasiparticle scattering interference phenomenon characterized by the peaks in the local density of states is studied within the kinetic energy driven superconducting mechanism in the presence of a single impurity. By calculation of the Fourier transformed ratio of the local density of states at opposite energy, it is shown that the quasiparticle scattering interference phenomenon can be described qualitatively by a single impurity in the kinetic energy driven homogeneous d-wave superconducting state. The amplitude of the peak increases with increasing energy at the low energy, and reaches a maximum at the intermediate energy, then diminishes to zero at the high energy. The theory also predicts that with increasing doping, the position of the peak along the nodal direction moves towards to the center of the Brillouin zone, while the position of the peak along the antinodal direction is shifted to large momentum region.     

离子注入GaN的拉曼散射研究

研究了离子注入前后GaN的拉曼散射光谱,特别是其中几个在各种离子注入后都存在的拉曼散射峰,如298,362和661cm-1峰的性质,峰值强度随注入元素原子量、注入剂量和退火温度的变化关系.上述三个拉曼散射峰的强度都随注入元素原子量的增加而降低.当注入剂量增大时,362和661cm-1峰值强度减少,而298cm-1峰值强度却增大.随退火温度的升高,这三个拉曼散射峰的强度先增加后降低.对所观察到的实验现象和这三个峰的起源进行了分析和讨论. 关键词： GaN 离子注入 拉曼散射 局域振动