外电场对N@C60, P@C60, As@C60分子结构和性质的影响

用量子力学方法研究了N@C60, P@C60, As@C60分子的几何和电子特征. 计算结果表明, 形成富勒烯包合物后, 碳笼只有微小的变形, 3种内包原子在笼中处于不同的位置, 碳笼与内包原子之间有明显的电荷转移和自旋轨道相互作用, 生成能分别为6.32, 70.88, -53.05 kJ/mol. 内包原子的3个单占据分子轨道(SOMO)能量变化很大, 并由于和碳笼作用而发生劈裂. 在外电场作用下, 分子的电子密度沿电场方向发生转移.分子的能量随外加电场的增强而降低. 分子轨道能级、能隙及SOMO轨道的能量和能级劈裂也发生了变化.     

Conduction mechanism of Aviram-Ratner rectifiers with single pyridine-sigma-C(60) oligomers

We present the electron transport of pyridyl aza[60]fulleroid oligomers, abbreviated as C(60)NPy, which is based on the donor-barrier-acceptor (D-sigma-A) architecture, at a single molecular scale using scanning tunneling microscopy. A rectifying effect is observed in the current-voltage characteristics. The theoretical calculation shows that the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) are well localized either on the Py moiety (donor) or on the C(60) moiety (acceptor), indicating the sigma-bridge decouples the LUMO and the HOMO of the donor and the acceptor, respectively. This structure accords well with the unimolecular rectifying model proposed by Aviram and Ratner [Chem. Phys. Lett. 1974, 29, 277]. The mechanism of the rectifying effect is understood by analyzing in detail the electron transport through energy levels of the donor and the acceptor of the C(60)NPy molecules. By directly comparing the experimental conductance peaks and the calculated density of states of the C(60)NPy, we find that the observed rectification is attributed to the asymmetric positioning of the LUMOs and the HOMOs of both sides of the acceptor and the donor of the C(60)NPy molecules with respect to the Fermi level of the electrodes. When a main voltage drop is over the molecule-electrode vacuum junction but a small fraction over the molecule itself, the shift of the energy levels between the donor and the acceptor will be small. This behavior deviates from the original proposal by Aviram and Ratner in which a large shift of the energy level is expected.     

The effect of doping on the energetics and quantum conductance in graphene nanoribbons with a metallocene adsorbate

Based on a PBE-D2 calculation that empirically includes van der Waals interactions to the standard GGA approximation of Perdew, Berke, and Ernzerhof, we have investigated the adsorption of ferrocene or ruthenocene on pristine and X-doped graphene (GrS) or graphene nanoribbons (GNRs), where X (=B or N) is a p-type or n-type heteroatom. First, we find that van der Waals interactions play a dominant role in the adsorption. Second, we find that metallocene adsorption on doped GNRs introduces different effects in the low-bias conductance, not far from the linear response regime, of GNRs depending upon the doping type. Adsorption on undoped or p-type GNRs brings about a slight reduction in conductance due to an introduction of quasi-bound states just below the Fermi level. No appreciable reduction is expected in n-type GNRs because those states are introduced far below the Fermi level.     

First-principles investigation of the electronic and field emission properties of C-doped ZnO nanotube

In order to search for novel field emitter nanomaterial, a density functional theory investigation is performed to understand electronic structures and field emission properties of carbon doped–ZnO nanotube. It has been revealed that electron transport through ZnONT is significantly increased in the presence of the carbon atom due to the reduced HOMO–LUMO energy gap, which makes the electrons easily excited from HOMO to LUMO, and then the electrons can easily emit. Comparing the ionization potentials of the pure and doped ZnONT, at the same external electric field strength, the ionization potential of C–doped ZnO nanotube is lower than that of pure one. Also, after the doping of carbon atom, the Fermi level of ZnONT increases, which indicates that the Fermi level shifts toward the conduction band. These results indicate that the field emission properties of ZnONT can be enhanced by the doping of ZnO nanotube with the carbon atom.     

Single and Multiple Doping Effects on Charge Transport in Zigzag Silicene Nanoribbons

A non‐equilibrium Green’s function technique combined with density functional theory is used to study the spin‐dependent electronic band structure and transport properties of zigzag silicene nanoribbons (ZSiNRs) doped with aluminum (Al) or phosphorus (P) atoms. The presence of a single Al or P atom induces quasibound states in ZSiNRs that can be observed as new dips in the electron conductance. The Al atom acts as an acceptor whereas the P atom acts as a donor if it is placed at the center of the ribbon. This behavior is reversed if the dopant is placed on the edges. Accordingly, an acceptor–donor transition is observed in ZSiNRs upon changing the dopant’s position. Similar results are obtained if two silicon atoms are replaced by two impurities (Al or P atoms) but the conductance is generally modified due to the impurity–impurity interaction. If the doping breaks the twofold rotational symmetry about the central line, the transport becomes spin‐dependent.     

g-C3N4碳位掺杂电学及光学性质的分析

使用第一性原理研究了C位掺杂的g-C₃N₄的电学性质和光学性质,掺杂原子为B、P、S. g-C₃N₄有C1位和C2 位两种对称位碳原子,其中在C1 位上的掺杂易于C2 位,掺杂体系也较C2 位稳定. 相比于磷和硫在g-C₃N₄上的掺杂,硼掺杂最易于进行. 掺杂后体系的晶体结构之间差别较大,这与掺杂原子的大小以及电负性有关. 由轨道布居分布可知,掺杂后的硼、磷、硫原子价电子发生了变化,表明掺杂原子发生了杂化,与相邻原子以强的共价键相连. 掺杂原子与被取代的碳原子之间的价电子差异导致了能带的增加. 在原来的体系中,掺杂后的体系出现了一条新的能带,因此导致实际带隙下降,表明了掺杂后的体系导电性能增强. 对纯g-C₃N₄及掺杂g-C₃N₄的光学性质分析表明,g-C₃N₄的光学吸收主要在紫外光区,掺杂磷和硫后对g-C₃N₄的光吸收波长范围无改变,掺杂硼后的g-C₃N₄光吸收不再局限于紫外光区,而且延伸至可见光区和红外光区,并在红外光区有很强的吸收,表明g-C₃N₄掺杂硼后能大大地提高光催化效率. 电子能量损失光谱和光导率谱以及介电常数都佐证了上述观点.     

Al-C60-Al分子结电子输运特性的第一性原理计算

利用基于密度泛函理论的格林函数方法, 计算了Al-C60-Al分子结的电子输运特性. 考虑了C60分子在铝电极表面的原子结构弛豫, 计算结果表明共振传导是Al-C60-Al分子结电子输运的主要特征, 在费米能级附近的电导约为1.14G0 (G0=2e2/h). 投影态密度(PDOS)分析表明, Al-C60-Al分子结的电子输运主要通过C60分子的最低空分子轨道(LUMO)和次低空分子轨道(LUMO+1)进行. 讨论了C60分子和铝电极之间距离的变化对其电子输运特性的影响.     

基于曲率和电子结构的掺杂C50和C70富勒烯的稳定性研究

使用密度泛函理论(DFT)-B3LYP/6-31G^*方法研究了B、N、Si、P和Co在C₅₀和C₇₀中的掺杂能和电子结构, 并基于曲率理论和电子结构探讨了掺杂富勒烯的结构稳定性. 计算结果表明, 掺杂能随着原子曲率的增大而减小, 随着掺杂物种原子半径的增大而增大, B、N、P和Co的掺杂有利于C₅₀结构的稳定, 而B和N的掺杂不利于C₇₀结构的稳定; 除了用于反映原子活性的曲率主要决定掺杂反应性, 各不等价碳原子在C₅₀和C₇₀的最高占据分子轨道(HOMO)中所占成分对掺杂能的影响也很大, 且其成分越大越有利于掺杂. 此外, 掺杂原子得失电子情况与其电负性有关. 本工作将为富勒烯结构稳定性的研究提供理论依据.     

Electronic excitations of C(60) aggregates

Excitation properties of the isolated C(60) and (C(60))(N) model clusters (N = 2, 3, 4, 6 and 13) are studied using an a priori parameterized and self-consistent Hamiltonian, the Complete Neglect of Differential Overlap considering the l azimuthal quantum number method. This method properly describes electron excitations of the isolated C(60) after the configuration interaction of singles (CIS) procedure, when those are compared with experimental data in n-hexane solution and in a molecular beam. Geometry models of (C(60))(N) clusters to model the effect of aggregation were obtained from the fullerene fcc crystal. Some peaks in the low energy edge of the absorption spectrum appear corresponding to clustering effects, as well as small increases of bandwidths in the strong bands at the UV region. An analysis of the theoretical absorption spectrum for dimer models has been carried out, taking into account the influence of the distance between fullerene centers. The density of states of CIS for fullerene clusters in the range from 2.0 to 6.5 eV shows the possibility of electron transitions as functions of the size of the clusters.     

Low-Bias Conductance Mechanism of Diarylethene Isomers:a First-Principle Study

The structure-property relationship of diarylethene (DAE)-derivative molecular isomers, which involve ring-closed and ring-open forms, is investigated by employing the non-equilibrium Green's function formalism combined with density functional theory. Molecular junctions are formed by the isomers connecting to Au(111) electrodes through flanked pyridine groups. The difference in electronic structures caused by different geometry structures for the two isomers, particularly the interatomic alternative single bond and double bond of the ring-closed molecule, contributes to the vastly different low-bias conductance values. The lowest unoccupied molecular orbital (LUMO) of the isomers is the main channel for electron transport. In addition, more electrons transferred to the ring-closed molecular junction in the equilibrium condition, thereby decreasing the LUMO energy to near the Fermi energy, which may contribute to a larger conductance value at the Fermi level. Our findings are helpful for understanding the mechanism of low-bias conductance and are conducive to the design of high-performance molecular switching based on diarylethene or diarylethene-derivative molecules.     

Discovery of Hexagonal Structured Pd–B Nanocrystals

We report on hexagonal close-packed (hcp) palladium (Pd)–boron (B) nanocrystals (NCs) by heavy B doping into face-centered cubic (fcc) Pd NCs. Scanning transmission electron microscopy–electron energy loss spectroscopy and synchrotron powder X-ray diffraction measurements demonstrated that the B atoms are homogeneously distributed inside the hcp Pd lattice. The large paramagnetic susceptibility of Pd is significantly suppressed in Pd–B NCs in good agreement with the reduction of density of states at Fermi energy suggested by X-ray absorption near-edge structure and theoretical calculations.     

Doping the Backbone of π‐Conjugated Polymers with Tricoordinate Boron: Synthetic Strategies and Emerging Applications

The doping of π‐conjugated organic compounds with trivalent boron atoms produces materials with intriguing properties and functions that result from the interaction of the π‐electron system with the vacant p orbital on boron. This offers unique opportunities in various applications such as organic (opto)electronics, biomedical imaging, and sensors for physiologically relevant anions or amines, as demonstrated by numerous examples on the molecular scale. Recently, the B‐doping strategy has been expanded to polymer chemistry with a view to benefit from the best of both worlds. Herein, recent advances in the synthesis of π‐conjugated polymers doped with tricoordinate boron in the backbone are reviewed. Selected applications are described where these functional materials have already been successfully implemented.     

Doping helium nanodroplets with high temperature metals: formation of chromium clusters

A new method for stable and continuous doping of superfluid helium nanodroplets (He(N)) with high-melting elements such as refractory metals is presented. The method exploits the advantages of electron bombardment heating and avoids stray fields induced by high currents or high frequency fields. It is thus especially suitable for magnetic studies of atoms and clusters in He(N). The source is characterized by means of mass spectroscopic investigations of He(N) doped with chromium atoms and clusters. Source temperatures of up to (1650 ± 50) °C were reached and Cr clusters up to Cr(9) could be formed in He(N).     

阴离子掺杂TiO2的芯位移和热力学性质的第一性原理研究

采用第一性原理计算考察了阴离子(硼、碳、氮、氟、磷、硫)掺杂的二氧化钛(包括锐钛矿相和金红石相)。芯位移计算结果表明,在氮掺杂的TiO2中,间隙掺杂类型的N的1s能级在XPS能谱上峰的位置要比替代掺杂的能级高,类似的结果也在硼、碳、磷和硫掺杂的TiO2上发现。然而对于F掺杂的TiO2,替代掺杂的峰位置比间隙掺杂的高,且与TiO2的晶相无关。还对阴离子掺杂的TiO2进行了热力学研究。结果表明,替换掺杂的形成焓高于间隙掺杂的,因此替代掺杂的TiO2的制备需要苛刻的条件,而间隙掺杂TiO2的制备只需温和的湿化学条件。     

Conductance switching in diarylethenes bridging carbon nanotubes

The recently reported photoswitching of diarylethene derivative molecules bridging carbon nanotube (CNT) contacts is theoretically analyzed. The short lifetime of the lowest unoccupied molecular orbital (LUMO) indicates that neither the open nor closed form of the molecule can be photoexcited into a charge-neutral excited state for any appreciable length of time preventing photochromic ring opening. Analysis of the highest occupied molecular orbital (HOMO) and LUMO lifetimes also suggests that photoexcitation results in oxidation of the molecules. This either reduces the quantum yield of photochromic ring closing, or it gives rise to the possibility of oxidative ring closing. Analysis of the resistance values and energy levels indicates that the HOMO energy levels of the closed isomers relevant for transport must lie within a few k(B)T of the CNT Fermi level. For armchair contacts, the change in resistance with isomer or substituent group is the result of shifts in the energy level of the molecular HOMO. The coupling of the molecular HOMO to the CNT contacts is insensitive to the isomer type or substituent group. For zigzag CNTs, the conductance is dominated by surface states at the Fermi level on the cut ends of the CNTs so that the conductance is relatively insensitive to the isomer type, and the conductance switching ratio is low. Multiple bridging molecules can interact coherently, resulting in energy splitting, shifting, and interference that cause a nonlinear change in conductance with increasing numbers of molecules. Instead of a factor of 3 increase in conductance expected for three independent channels, a factor of 10(3) increase in conductance is obtained for three bridging molecules.     

Lowest-energy structures of (C60)nX (X=Li+,Na+,K+,Cl-) and (C60)nYCl (Y=Li,Na,K) clusters for n</=13

Basin-hopping global optimization is used to find likely candidates for the lowest minima on the potential energy surface of (C(60))(n)X (X=Li(+),Na(+),K(+),Cl(-)) and (C(60))(n)YCl (Y=Li,Na,K) clusters with n相似文献   

Uncovering transport properties of 4,4'-bipyridine/gold molecular nanobridges

Here, the fascinating connection between the chemical and the transport properties of recently fabricated 4,4'-bipyridine/gold nanobridges is addressed. By means of first-principles ab initio calculations, the remarkable reproducibility of the 4,4'-bipyridine conductance properties is explained as the combined result of (i) the bonding of the molecule to the metallic leads through hybridization between the 4,4'-bipyridine highest occupied molecular orbitals and lowest unoccupied molecular orbitals (LUMOs) with s and d orbitals at low-coordination gold atoms, (ii) the limited number of molecule-lead arrangements due to gold-hydrogen steric repulsions, and (iii) the electron transmission through a LUMO-derived resonance, whose positioning with respect to the Fermi level determines which of the above arrangements yields nonnegligible conductance. Structural and electronic interpretations to the stepped dependence reported for the electronic transport of 4,4'-bipyridine as a function of the distance between the gold tips are also given.     

Single molecule electron transport junctions: charging and geometric effects on conductance

A p-benzenedithiolate (BDT) molecule covalently bonded between two gold electrodes has become one of the model systems utilized for investigating molecular transport junctions. The plethora of papers published on the BDT system has led to varying conclusions with respect to both the mechanism and the magnitude of transport. Conductance variations have been attributed to difficulty in calculating charge transfer to the molecule, inability to locate the Fermi energy accurately, geometric dispersion, and stochastic switching. Here we compare results obtained using two transport codes, TRANSIESTA-C and HUCKEL-IV, to show that upon Au-S bond lengthening, the calculated low bias conductance initially increases by up to a factor of 30. This increase in highest occupied molecular orbital (HOMO) mediated conductance is attributed to charging of the terminal sulfur atom and a corresponding decrease in the energy gap between the Fermi level and the HOMO. Addition of a single Au atom to each terminal of the extended BDT molecule is shown to add four molecular states near the Fermi energy, which may explain the varying results reported in the literature.     

Effect of n‐type doping on the hole transport in poly(p‐phenylene vinylene)

N‐type doping of poly(2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐p‐phenylene vinylene) (MEH‐PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n‐type doping simultaneously suppresses the hole transport in MEH‐PPV. We demonstrate that this strong reduction of the hole transport originates from unionized DMC molecules that act as hole traps. This hole trapping effect explains why the current of a DMC‐doped MEH‐PPV polymer light‐emitting diode is orders of magnitude lower than that of the undoped device. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011     

High-energy-resolution electron energy-loss spectroscopy study of the electronic structure of Cu- and Mg-Si-doped β-rhombohedral boron crystals

Electronic structures of Cu and Mg-Si-doped β-rhombohedral boron (β-r-B) crystals were studied by using a high-energy-resolution electron energy-loss spectroscopy microscope. Boron 1s electron excitation spectra, which show the density of states of the conduction bands, of the crystals were obtained from single crystalline areas of 100 nm in diameter. The spectrum of Cu-doped β-r-B showed a chemical shift to a lower binding energy side. It means an electron transfers from the doped Cu atoms to B atoms. The intensity distributions of the spectrum was almost the same as that of the non-doped β-r-B, which suggests that all of the doped electrons occupy the intrinsic acceptor level just above the valence bands. The spectrum of Mg-Si-doped β-r-B showed not only a chemical shift to a lower binding energy side but also a sharp intensity increase at the onset with a width of an energy resolution of the experiment. The sharp onset may be assigned to a Fermi edge. It indicates that the doped electrons fill up the acceptor level and occupy the conduction bands forming the Fermi edge, a metallization of β-r-B by the Mg-Si-doping.