高超声速飞行器磁控热防护系统建模分析

针对高超声速飞行器防热, 搭建了螺线管磁控热防护系统的物理模型. 采用低磁雷诺数磁流体数学模型, 分析了外加磁场强度及磁场形态对磁控热防护效果的影响. 对比了三种磁场类型(磁偶极子、螺线管、均布磁场)下磁控热防护效果的差异, 分析了螺线管几何参数对磁控热防护效果的影响. 研究表明, 磁场降低表面热流作用存在“饱和现象”; 三种磁场形态的磁控热防护能力从小到大依次为磁偶极子、螺线管、均布磁场; 相同驻点磁感应强度条件下, 增大螺线管半径有利于提高磁控热防护效果, 缩短螺线管与驻点距离不利于驻点和肩部防热, 螺线管长度对磁控热防护效果影响相对较小.     

X43高超声速飞行器的飞行热走廊研究

建立飞行器的热走廊物理模型和求解方法对于设计飞行器防热结构、确定飞行轨道和优化气动外形等均有重要的工程应用价值,本文对X43高超声速飞行器的飞行热走廊的物理含义进行了分析,初步建立了飞行热走廊的物理模型,给出了该物理模型下飞行热走廊的控制方程和求解方法,通过对X43高超声速飞行器典型位置的飞行热走廊的计算,研究了高超声速飞行器的热走廊规律和特征,研究了防热材料的性能对飞行走廊的限制,明确了防热材料的关键防热参数,通过研究发现: (1)防热材料的发射系数越大,其对应的热走廊越宽阔,飞行轨道的选择余地也越大; (2)不同位置、不同流态对应的热走廊边界不同,推迟转捩发生可以增加热走廊区域,有利于防热.     

高超声速飞行器前缘疏导式热防护结构的实验研究

针对高超声速飞行器前缘疏导式防热结构的特点,设计前缘内嵌高导热率材料结构和一体化层板热管结构两类对比实验,用于验证前缘疏导式防热结构的可行性.利用球形短弧氙灯作为辐射热源模拟气动加热,分别对钢质前缘、内嵌铜材料的钢质前缘和一体化层板式热管前缘进行加热,测量前缘驻点区域和尾部翼面区域的温度变化.实验结果表明:内嵌高导热率材料的前缘疏导结构能够降低头部驻点区的温度,提高尾部低温区的温度,实现对前缘结构的热防护;以蒸馏水作为工质一体化层板式热管前缘结构,在较低热流条件下也能够实现对前缘驻点区的疏导式热防护,但在较高热流条件下,由于水蒸气压力过大使得层板式前缘结构发生破坏,体现出热管内部工作介质对结构防热效果和应用范围都起到的关键作用.     

高超声速磁流体力学控制霍尔效应影响

针对霍尔效应对高超声速磁流体力学控制的影响问题,考虑高超声速流动过程中高温化学反应、气体分子热力学温度激发(即平动、转动、振动以及电子温度能量模态之间的激发与松弛过程)及多电离组分等离子体霍尔系数分布,通过耦合求解各向异性霍尔电场泊松方程和带电磁源项的高温热化学非平衡流动控制方程组,建立了高超声速流动磁流体力学控制霍尔效应数值模拟方法,开展了多种条件下高超声速流动磁流体力学控制数值模拟,分析了霍尔效应"漏电"与"聚集"现象原理及其对气动力/热特性的影响机制,详细探讨了不同空域、速域和飞行器特征尺度条件下霍尔效应的作用机理和影响规律.研究表明:1)霍尔效应改变了流场等离子体洛伦兹力分布,削弱了整体的力学效果,使整体的磁阻特性降低; 2)霍尔效应对高超声速磁流体力学控制的影响,与壁面导电性和壁面附近漏电层的"漏电"现象紧密相关,要增强磁控效果,必须抑制壁面附近的"漏电"现象; 3)霍尔效应对磁控热防护效果的影响较为复杂,受"漏电"现象和电流"聚集"现象共同作用; 4)基于本文基准状态,当高度高于67 km或速度高于5.7 km/s或特征尺度大于0.5 m时,霍尔效应使磁控热防护效果增强,电...     

高超声速飞行器气动热环境的化学非平衡效应数值研究（英文）

针对高超声速飞行器气动热环境的化学非平衡效应进行数值模拟.首先以二维圆柱钝体为模型,采用三种气体模型比较和分析化学非平衡效应对气动特性和气动加热特性的影响;接着以三维球头钝体为模型,进一步分析化学非平衡效应及壁面催化特性对气动加热特性的影响.分析表明,化学非平衡效应对压力分布的影响不大;但它能显著缩短激波脱体距离,更重要的是,能大幅降低波后温度,对飞行器气动热环境产生深远影响.另外,壁面催化特性对传热也有较大的影响,对壁面材料催化进程的有效控制可以大幅降低壁面传热.     

高超声速飞行器热管冷却前缘结构一体化建模分析

针对高超声速飞行器工作时前缘恶劣的气动加热环境, 为了保证飞行器前缘的尖锐外形, 提出内嵌高温热管前缘结构. 针对热管内部复杂流动与换热情况, 对内嵌高温热管前缘结构进行一体化建模, 将模型的核心部件液态金属热管工作状况的计算与实验进行对比以验证模型的可靠性. 本文还分析了给定工况下内嵌高温热管前缘结构的热防护效果, 其中壁面最高温度下降了11.6%, 最低温度上升了8%, 高温区和低温区均被封闭在前缘外层区域, 内层温度更加均匀, 实现了热流由高温区向低温区的转移, 削弱了高温区的热负荷. 本文还分析了接触热阻对热管冷却前缘结构效果的影响. 关键词： 热管 前缘 疏导式热防护 气动热     

霍尔推力器热模型研究

为了对霍尔推力器的热分析研究提供准确的能耗加载条件,开展了霍尔推力器稳态工况下的热模型研究。基于等离子体理论,分析放电室内各项能量损耗机理,并建立各能量损耗与推力器工作参数、性能参数和结构参数的相关函数,系统地得到了霍尔推力器的完整热模型。以LHT100推力器为研究对象,热模型计算结果显示：额定工况下束流能量损耗约889 W,壁面能量损耗约300 W,阳极能量损耗约44 W,电离能量损耗约43 W,辐射能量损耗约34 W等。以此能量损耗作为热边界条件进行有限元分析,并开展热平衡试验进行验证,计算结果与试验结果吻合较好,最大误差小于5%。     

吸气式高超声速飞行器气动力气动热的数值模拟方法及应用

对吸气式高超声速飞行器而言,物面热流和摩阻的准确预测对飞行器设计及安全十分关键.介绍采用CFD准确预测气动力和气动热的方法,包括流动的控制方程、湍流模型及湍流的先进壁面函数边界条件,介绍流动的数值求解方法.对典型超声速层流和湍流流动的摩擦阻力和热流进行详细的验证与确认,考察CFD工具在使用先进壁面函数边界条件后,湍流计算的法向网格无关性能力.对设计的一种吸气式高超声速飞行器的气动力和气动热进行数值模拟,为飞行器的气动设计及热防护提供了可靠的数据.     

临近空间高超声速飞行器气动力及气动热研究现状

临近空间高超声速飞行器具有速度快、突防能力强、杀伤力大等特点,是当今世界各军事强国新型武器的重点发展方向.其中,气动力和气动热是高超声速飞行器的两项重要指标,也是高超声速技术研究的重点内容.文章综述了国内外临近空间高超声速飞行器气动力及气动热研究现状,分析了研究的发展趋势,并分别从工程计算、数值仿真以及实验研究3个方面介绍了高超声速飞行器气动力及气动热的研究技术和方法.      

高超声速飞行器前缘流固耦合计算方法研究

对高超声速流场和结构温度场进行了耦合计算分析, 同时基于准静态假设对结构应力进行了分析. 流场部分采用基于非定常Navier-Stokes (N-S)方程的有限体积法, 湍流模型采用SST k-ω 模型, 固体部分采用基于非稳态热传导方程的有限元法, 同时基于准静态假设对固体结构的应力应变进行了分析. 在流固交界面处, 高速流体从固体结构得到温度边界条件, 固体结构从高速流体得到热流边界条件, 从而实现了流场和固体温度场的紧耦合计算.通过与超声速无限长圆管绕流试验结果进行对比, 验证了该方法的可靠性. 同时对二维圆管结构在气动加热过程中的温度、应力等的变化进行了比较详细的分析. 研究结果表明: 随着气动加热时间的推进, 由于圆管结构的高温区在不断扩大, 导致了结构的热变形在不断地增大; 圆管最小变形区出现在θ为60°处; 同时研究发现在计算时间内圆管热变形对外部流场的影响可以忽略不计.     

高速飞行器磁控阻力特性

采用低磁雷诺数磁流体数学模型,对外加磁场下的高超声速半球体流场进行数值模拟.选取三种简单理想磁场(轴向、径向、周向均布磁场),分析了不同磁场类型对流场结构、气动阻力与洛伦兹阻力的影响及作用机理.研究发现,轴向磁场径向"挤压"效应使得激波外形凸出,且壁面静压存在"饱和现象";径向磁场存在轴向"外推"效应,较大的磁场强度会导致肩部形成高温区;周向磁场下感应电场的存在导致增阻效果很差.进而对比了两种相同驻点磁感应强度特殊分布磁场(偶极子磁场、螺线管磁场)下的流场,发现了不同于理想磁场的径向"扩张"效应.按增阻效果从大到小依次为径向磁场、螺线管磁场、轴向磁场、偶极子磁场、周向磁场.     

Experimental probes of emergent symmetries in the quantum Hall system

Experiments studying renormalization group flows in the quantum Hall system provide significant evidence for the existence of an emergent holomorphic modular symmetry Γ₀(2)${\Gamma }_0(2)$. We briefly review this evidence and show that, for the lowest temperatures, the experimental determination of the position of the quantum critical points agrees to the parts per mille   level with the prediction from Γ₀(2)${\Gamma }_0(2)$. We present evidence that experiments giving results that deviate substantially from the symmetry predictions are not cold enough to be in the quantum critical domain. We show how the modular symmetry extended by a non-holomorphic particle–hole duality leads to an extensive web of dualities related to those in plateau–insulator transitions, and we derive a formula relating dual pairs (B,Bd)$(B,B_d)$ of magnetic field strengths across any transition. The experimental data obtained for the transition studied so far is in excellent agreement with the duality relations following from this emergent symmetry, and rule out the duality rule derived from the “law of corresponding states”. Comparing these generalized duality predictions with future experiments on other transitions should provide stringent tests of modular duality deep in the non-linear domain far from the quantum critical points.     

On the role of a torsion‐like field in a scenario for the Spin Hall Effect

Starting from a field theory action that describes a Dirac fermion, we propose and analyze a model based on a low‐relativistic Pauli equation coupled to a torsion‐like term to study Spin Hall Effect (SHE). We point out a very particular connection between the modified Pauli equation and the (SHE), where what we refer to torsion as field playing an important role in the spin‐orbit (SO) coupling process. In this scenario, we present a proposal of a spin‐type current, considering the tiny contributions of torsion in connection with intrinsic anisotropy of the crystal electric field.     

新型霍尔传感器的特性及在测量与控制中的应用

简述新型霍尔传感器的特性及在自动控制、信息处理和物理量测量中的应用。     

Towards a field theory of the plateau transitions in the integer quantum Hall effect

We suggest a procedure for calculating correlation functions of the local densities of states (DOS) at the plateau transitions in the integer quantum Hall effect (IQHE). We argue that their correlation functions are appropriately described in terms of the SL( )/SU(2) WZNW model (at the usual Ka –Moody point and with the level 6≤k≤8 ). In this model we have identified the operators corresponding to the local DOS, and derived the partial differential equation determining their correlation functions. The OPEs for powers of the local DOS obtained from this equation are in agreement with available results.     

PID自动控温仪在变温霍耳效应研究中的应用简

应用计算机控制的PID控温仪研究了锑化铟样品的变温霍耳效应。通过在线控制并记录77K～300K温度范围内锑化铟样品的霍耳电压，估测了样品的禁带宽度。     

Bulk and edge properties of the Chern-Simons Ginzburg-Landau theory for the fractional quantum Hall effect

The Chern-Simons Ginzburg-Landau theory for the fractional quantum Hall effect is studied in the presence of a confining potential We review the bulk properties of the model and discuss how the plateau formation emerges without any impurity potential. The effect is related to changes, by accumulation of charge, at the edge when the chemical potential is changed. Fluctuations about the ground state are examined and an expression is found for the velocity of the massless edge mode in terms of the confining potential. The effect of including spin is examined for the case when the system is fully polarized in the bulk. In general a spin texture may appear at the edge, and we examine this effect in the case of a small spin-down component. The low-frequency edge modes are examined and a third-order equation is found for velocities which indicates the presence of three different modes. The discussions are illustrated by numerical studies of the ground states, both for the one- and two-component cases.     

Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor

A new analytical model to describe the drain-induced barrier lowering(DIBL) effect has been obtained by solving the two-dimensional(2D) Poisson’s equation for the dual-channel 4H-SiC MESFET(DCFET).Using this analytical model,we calculate the threshold voltage shift and the sub-threshold slope factor of the DCFET,which characterize the DIBL effect.The results show that they are significantly dependent on the drain bias,gate length as well as the thickness and doping concentration of the two channel layers.Based on this analytical model,the structure parameters of the DCFET have been optimized in order to suppress the DIBL effect and improve the performance.     

An analogue of the quantum Hall conductivity for a magnetic quadrupole moment

The quantum dynamics of a moving particle with a magnetic quadrupole moment that interacts with electric and magnetic fields is introduced. Then, it is discussed which conditions the external fields must satisfy so that an analogue of the Landau quantization can be obtained. Finally, by dealing with the lowest Landau level associated with the magnetic quadrupole system, an analogue of the quantum Hall conductivity is obtained.