不同离子辐照氟化锂材料时原位发光光谱测量分析

在BNU400注入机上搭建的离子激发发光(ion beam induced luminescence,IBIL)测量装置上,开展了相同能量(100 keV)条件下的3种离子(H⁺、He⁺以及O⁺)辐照氟化锂材料时的IBIL光谱的原位测量工作,对比研究离子种类对氟化锂材料辐照缺陷的生成及其演变行为的影响.结合SRIM(Stopping and Range of Ions in Matter)模拟的结果,可以发现He⁺辐照时的IBIL光谱强度最高,这是由于He⁺激发产生的电子空穴对密度高于H⁺,而O⁺辐照时由于激发出的电子空穴对密度过高引起的非辐射复合比例增加,从而导致发光效率过低;质量数越大的离子辐照时,核阻止本领越大,会加快缺陷的生成和湮灭速率,降低达到平衡状态时的发光强度.近红外波段的F₃^-/F₂⁺色心发光峰强度及其演变行为表明其耐辐照性能好于可...     

利用离子激发发光研究低温条件下ZnO发光行为EI北大核心CSCD

离子激发发光(Ions beam induced luminescence,IBIL)可以实时原位分析不同温度、不同离子辐照条件下材料内部点缺陷的演变行为。本文利用2 MeV H^(+)研究了300,200,100 K温度下ZnO单晶内部点缺陷发光及其随注量的演变行为。实验中发现ZnO深能级发射和近带边发射,结合Voigt分峰与XPS实验结果,确定红光(1.75 eV)与V_(Zn)相关,橙红光(1.95 eV)来自Zn_(i)到O_(i)跃迁;对于与V_(O)相关的绿光(2.10 eV),其红移可能由于温度降低导致更多电子由导带释放到Zn_(i)。峰中心位于3.10 eV和3.20 eV近带边发射分别来自于Zn_(i)到价带的跃迁和激子复合,红移原因分别为Zn_(i)附近局域化能级和带隙收缩。利用单指数公式对发光强度进行拟合,获得的衰减速率常数(f)可以表征缺陷的辐射硬度,对比发现深能级发射峰在200 K时辐射硬度最大,而近带边发射峰在300 K时辐射硬度最大。     

利用离子激发发光研究ZnO离子注入和退火处理的缺陷变化

在北京师范大学GIC4117 2×1.7 MV串列加速器上,利用离子激发发光(ions beam induced luminescence,IBIL)技术研究了2 MeV H⁺注入ZnO的缺陷变化及473和800 K退火处理对缺陷的恢复作用.实验表明,在2 MeV H⁺的辐照下,晶体内部产生的点缺陷会快速移动、聚集成团簇,从而抑制发光.473 K退火后的受辐照ZnO晶体内仍存在着大量的缺陷和团簇,而这些缺陷和团簇作为非辐射中心抑制着ZnO晶体的发光.800 K的退火处理可以显著地分解辐照过程中形成的团簇,也可以帮助点缺陷回到晶格位置,从而减少晶体内部的不平衡缺陷,提高晶体的结晶度,使退火后的受辐照ZnO样品IBIL光强大幅度增强.     

稀土掺杂固体发光材料的光谱分析

光谱分析是评价稀土发光材料光谱性质的主要依据,Judd-Ofelt(J-O)理论是光谱分析的基础。详述了采用J-O模型拟合三个强度参量和估算一些重要辐射参量的操作细节,讨论了相关公式的合理应用,总结了计算中误差的主要来源,并推荐了一种通过低温实验获得较可靠光谱参量的途径。建议采用透射光谱数据计算实验跃迁振子强度,吸收系数和吸收截面的计算应该扣除光反射、散射和基质本身吸收的影响,平均波数和平均波长的取值须考虑线形因子。并建议通过发射光谱的实测线形计算各波长的发射截面。由于J-O模型涉及许多近似和假设,计算结果误差较大,可能导致结果不可靠。通过分析指出,采用低温下测得的能级寿命和荧光分支比进行相关参量的估算可获得较可靠、较有意义的结果。     

基于Voigt函数拟合的离子激发发光光谱分峰方法

离子激发发光(IBIL)分析作为一种实时原位的光谱分析技术,由于其对样品内部结构的敏感性,给我们分析样品光谱谱峰信息带来了一定的困难。为了准确地对离子激发发光能谱进行分峰以便更加清晰地判断材料内部不同缺陷的发光中心,提出了一种利用Voigt函数,通过L-M（levenberg-marquardt）非线性最小二乘算法对100和200 K温度时ZnO的IBIL能谱中深能级发射（DBE）峰进行分峰的方法。通过对比Gauss函数和Voigt函数对能谱拟合后峰位随注量的波动情况,发现使用Voigt函数拟合得到的峰位更加稳定,并且收敛速度更快。同时通过对使用Voigt函数拟合后得到的峰中心位于1.75, 1.95和2.10 eV三个子峰的高斯函数半高宽与洛伦兹函数半高宽比较,发现洛伦兹函数半高宽约为高斯函数半高宽的1/10,而且100 K时的1.95 eV峰,200 K时1.75和1.95 eV峰,其洛伦兹峰半高宽数值为10-10量级以下,说明其中非均匀展宽（高斯展宽）仍然是谱峰展宽的主要机制;而电子与声子散射作用是洛伦兹展宽的主要机制。对于涉及导带中大量电子的2.10 eV子峰,其在200 K时洛伦兹函数半高宽明显大于100 K时,由于在温度较高时,由于晶格热振动加剧,且电子热运动加强,增大了散射概率,导致电子与声子的散射作用加强,从而对洛伦兹谱线进一步展宽。而峰中心位于1.75 eV的红光,其主要与V_Zn相关,在100 K时其子峰的洛伦兹半高宽为0.02 eV, 但在200 K时变得极小,这可能是由于100 K时V_Zn束缚的电子或激子在200 K获得足够的热动能摆脱了V_Zn束缚,减弱了与周围的晶格的散射作用,从而使得洛伦兹展宽变得极弱。实验结果表明Voigt函数更加适用于IBIL能谱拟合分峰,这也为以后IBIL技术应用于其他材料内部结构能谱分析提供了可借鉴的依据。     

高密度激发下CdS单晶的自由激子发光

本文首次在77K温度的电致发光光谱上,观测到了自由激子和自由激子(Ex-Ex)散射的发射带P。根据半经典理论,得到CdS单晶在高激发密度下的激子有效温度高于晶格温度。并且在77K温度下,通过氮分子激光器3371Å谱线的激发,观察到了Ex-Ex散射的P带的受激发射现象。     

Ce3+—高分子络合物发光的激发过程

本文研究了Ce3+-PMMA及Ce3+—PMA18·C·6两个高分子络合物发光材料的荧光激发过程以及激发过程与高分子结构的关系。通过荧光寿命、荧光光谱以及时间分辨光谱分析表明,在Ce3+—PMMA络合物体系中,Ce3+的荧光发射主要是来自高分子配体的能量传递,而对于Ce3+—PMA18·C·6粉末络合物体系,Ce3+发光的能量主要是来自入射光的直接激发。文章对上述两个稀土高分子络合物的激发机制的差异也做了较为详细地描述。     

稀土掺杂材料的上转换发光

稀土掺杂材料的上转换发光是实现光波频率转换的重要途径,也是稀土掺杂发光材料研究的重要内容。本文从介绍与上转换相关的基本概念出发,阐述了稀土离子上转换发光的发展历史;对稀土离子掺杂材料的能量传递、激发态吸收、合作敏化、合作发光、双光子吸收激发及光子吸收雪崩等上转换发光机制进行了概述,并对各机制进行了比较;对不同稀土离子掺杂体系中上转换发光的机制进行了总结;对以往研究的稀土掺杂上转换发光材料的基质,包括粉体材料、晶体材料、非晶材料进行了概括;最后对影响稀土离子上转换发光效率的因素进行了分析,提出了在上转换发光材料的设计中应重点考虑基质对泵浦光及上转换发射光的吸收、基质材料的声子能量、稀土离子的掺杂方案及泵浦途径等因素。     

Ion beam induced luminescence studies of LiAlO2 using negative ions

Lithium aluminate (LiAlO₂) is the candidate material for solid tritium breeder applied in the developing fusion reactors. The research of its defect behavior under ion irradiation was proceeded in the negative ions induced luminescence setup of the GIC4117 Tandem accelerator in Beijing Normal University. The ion beam induced luminescence (IBIL) measurement was performed by 20 keV H⁻ ions at room temperature. The luminescence spectra showed seven emission bands: the 4.55 eV may due to a self-trapped exciton (STE), the 4.06 eV and the 1.72 eV may due to impurity or intrinsic defect, the 3.54 eV due to F center, the 3.20 eV due to F⁺ center, the 2.93 eV due to F₂ center, the 2.30 eV due to F-center aggregates (F_n center), respectively. The intensity evolutions of each band with fluence were presented and the corresponding mechanisms were discussed.     

Electron beam induced modifications in crystalline structure of polyvinylidene fluoride/nanoclay composites

PVDF/nanoclay nanocomposites were prepared via melt mixing method. The intercalated dispersion of the nanoclay in PVDF matrix was confirmed by XRD. According to FTIR, DSC and XRD results, the presence of nanoclay facilitated transition from α-to-β crystalline phase. Electron beam irradiation decreased the melting point of the nanocomposites. The decrease in melting point of the nanocomposites was about 11 °C at 500 kGy. The crystallinity of nanocomposites increased at an irradiation dose of 100 kGy and decreased at higher irradiation doses. The extent of crosslinking of the nanocomposites increased significantly with irradiation up to 300 kGy. The nanoclay intensified the increase in yield strength with irradiation doses up to 300 kGy. The combination of nanoclay and irradiation had a synergistic effect on the increase of yield strength.     

Spectroscopy of F 3 + -color centers in lithium fluoride crystals (review)

Results of investigations of radiative F ₃ ⁺ -color centers in lithium fluoride obtained by the methods of one- and two-photon absorption, polarization spectroscopy, and luminescence in singlet, triplet and triplet-singlet channels are reported. The scheme of energy levels of the F ₃ ⁺ -center is revised. The probabilities of singlet-triplet conversion and the rates of depletion of the lower triplet state in the range of 80–350 K are presented. Recommendations are given on the technology of radiative LiF coloration that provide an increase in the F ₃ ⁺ -center concentration and a decrease in the concentration of some other centers that prevent lasing on the LiF:F ₃ ⁺ active medium from being obtained. The phototransformations of color centers in LiF are analyzed. The parameters of lasers with LiF:F ₃ ⁺ active media that provide generation of radiation tunable in the green region of the spectrum are considered. Based on spectroscopic data the maximum attainable time characteristics of such lasers are discussed. The prospects for further investigations of LiF:F ₃ ⁺ lasers are outlined in brief. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 5, pp. 745–760, September–October, 1998.     

Radiation-induced color centers in the near-surface layer of lithium fluoride crystals

For radiation-induced intrinsic color centers, we show that the concentrations of identical centers and the concentration ratios of different centers are quite different in the near-surface layer and within the interior volume of a lithium fluoride crystal. We have established that these differences also depend on the sign of the difference between the temperature at which the crystal was irradiated with γ photons and the vacancy mobility temperature. We provide an interpretation for the results obtained, based on the structural features of the near-surface layer and the concentration ratio of vacancies and electrons in the layer, serving as the starting components for color center formation. We found that the concentrations of centers change over the course of a few days by tens of percent in the layer “emerging” from the interior onto the surface as a result of cleavage of the crystal. We measured the luminescence lifetimes of F₃ (R2) and F₄ centers: 6.6 nsec and 11.7 nsec. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 6, pp. 775–781, November–December, 2006.     

离子束流后处理对类金刚石薄膜激光损伤特性的影响

类金刚石薄膜激光损伤阈值低,已经严重制约其在红外激光系统中的应用。基于非平衡磁控溅射技术,在硅基底上沉积类金刚石薄膜;采用离子束流后处理技术,用正交实验法确定影响处理效果的主要因素,对已沉积完成的DLC薄膜进行离子束轰击;在不同处理工艺下,观测薄膜样品的光学常数及拉曼光谱,最后进行了激光损伤测试。从测试结果可知,离子束流后处理参数：离子能量1000 eV、放电电流30~40 mA、轰击时间8 min时,透射率由原来的60.65%提高到了65.98%;消光系数在900 nm后明显降低,DLC薄膜的激光损伤阈值从0.69 J/cm2提高到1.01 J/cm2。     

宽束冷阴极离子源分时中和技术的研究

离子束辅助镀膜沉积过程中,绝缘薄膜表面的电荷积累效应严重影响了薄膜质量。通过对宽束冷阴极离子源引出栅部分的改进,采用分时引出电子和离子方法,使正负电荷中和,以消除薄膜表面的放电现象,并对引出电子束的束流密度、能量、发射角等参数进行了测试。实验结果表明：在引出电压为600V时,电子的平均能量为100eV左右;引出电子束的发射角可以达到±40°,在±15°范围内的束流密度波动小于±5%。引出电子的束流密度较同参数下的离子束流密度小,通过调节脉冲电源的占空比,可达到很好的中和效果。     

Broad band light-emitting nanostructured substrates by ion beam irradiation of lithium fluoride crystals

We present experimental results on simultaneous surface nanostructuring and optical activation of lithium fluoride crystals by 800 eV off-normal Ar⁺ sputtering. Our data demonstrate that the formation of periodic nanostructures is accompanied by the efficient production of stable electronic defects, optically active in the green and red parts of the visible spectra, thus providing the possibility to conceive and fabricate advanced insulating substrates.     

Low-temperature optical spectra and zero-phonon transition of color centers in γ-rayed lithium fluoride crystals

The zero-phonon lines on R_2, R~ , N_1 and R′_2 centers and some new narrow lines have been observed in bivalent-metal-doped and air-grown LiF crystals irradiated by γ-ray in the temperature range of 9.5—130K. The spectral properties and thermostabilities of the lines are investigated systematically at different temperatures.     

Excitation spectra and structure of luminescence centers of manganese ions in single crystals of zinc sulfide

We investigate the photoluminescence excitation spectra in ZnS:Mn single crystals at room temperature and at the temperature of liquid nitrogen with a different concentration of Mn²⁺ ions. The strongest bands peaking at 557, 578, 600, and 637 nm are associated with a different position of the Mn ion in the lattice of the crystals under investigation. The difference obtained in the excitation spectra can be explained by the resonance transfer of energy between the Mn ions. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 208–210, March–April, 2000.