P3HT:PCBM薄膜成膜过程对聚合物太阳能电池性能的影响

P3HT:PCBM薄膜的快速和缓慢成膜过程能显著的改变异质结聚合物太阳能电池性能.通过调节旋转时间以及薄膜退火前的间隔时间,研究了P3HT:PCBM混合薄膜缓慢生长所需最佳时间.结果表明,在转速800 r·min-1下旋涂薄膜,经过50～80 s的旋涂,接着放置样品薄膜30 min以上,然后再对薄膜进行退火处理,电池效...     

P3HT∶PCBM薄膜成膜过程对聚合物太阳能电池性能的影响

P3HT∶PCBM薄膜的快速和缓慢成膜过程能显著的改变异质结聚合物太阳能电池性能。通过调节旋转时间以及薄膜退火前的间隔时间,研究了P3HT∶PCBM混合薄膜缓慢生长所需最佳时间。结果表明,在转速800 r.min-1下旋涂薄膜,经过50~80 s的旋涂,接着放置样品薄膜30 min以上,然后再对薄膜进行退火处理,电池效率可以达到3%以上,而快速成膜的电池效率只有1.8%左右。合理的P3HT和PCBM相分离促进了相应载流子的跳跃和传输,是提高电池效率的根本原因。研究结果为准确掌控缓慢生长的混合薄膜提供了时间窗口。     

活性层厚度对体异质结聚合物太阳能电池性能的影响

制备了MEH-PPV(poly[2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene])和PCBM (1-(3-mehyloxycarbonyl)propy1-phenyl[6,6]C₆₁)共混体系的聚合物太阳能电池。通过改变MEH-PPV∶PCBM(质量比为1∶4)混合溶液的浓度及旋涂时的转速来改变活性层的厚度,研究了器件性能随活性层厚度的变化。当旋涂速率小于4 000 r·min-1时随着厚度的减小,开路电压没有明显的变化,基本在0.8 V左右,但短路电流呈现单调上升的趋势,填充因子略有下降。当旋涂速率大于5 000 r·min-1时,开路电压和短路电流都开始下降。其中,开路电压从5 000 r·min-1时的0.78 V下降到8 000 r·min-1时的0.67 V,短路电流更是从5 000 r·min-1时的3.96 mA·cm-2下降到8 000 r·min-1 时的1.76 mA·cm-2。短路电流受光吸收和载流子传输两方面的共同影响,而活性层厚度的变化使得这两方面的影响产生相悖的效果。活性层越厚,光生激子数越多,但同时内建电场变弱,而且激子解离后得到的载流子传输到相应电极的距离越长,载流子被电极收集的概率减小。开路电压的降低则源于激子在MEH-PPV和PCBM与相应电极界面处解离比重的增加。     

掺杂石墨烯量子点对P3HT:PCBM太阳能电池性能的影响

为研究掺杂石墨烯量子点(GQDs)对聚合物电池的影响,采用溶剂热法制备了GQDs,掺杂到聚3-己基噻吩和富勒烯衍生物(P3HT∶PCBM)中作光敏层制备了聚合物太阳能电池。掺杂不同浓度的GQDs后,聚合物电池的开路电压和填充因子都比未掺杂器件高。GQDs掺杂质量分数为0.15%时,形成的掺杂薄膜平整、均匀,填充因子提高了17.42%。GQDs经还原后,随还原时间的延长,填充因子FF增大。到45 min时,电池的FF基本稳定,从31.57%提高至40.80%,提高了29.24%。退火后,获得了最佳的掺杂GQDs的聚合物太阳能电池,开路电压Voc为0.54 V,填充因子FF为55.56%,光电转换效率为0.75%。     

复合阴极Ag/LiF/Al对P3HT:PCBM太阳能电池性能的影响

在P3HT∶PCBM聚合物太阳能电池的阴极LiF/Al中引入纳米结构的银膜组成Ag/LiF/Al复合阴极,太阳能电池的光电流能显著提高。在AM1.5G和100mW.cm-2的模拟太阳光照射下,当银膜厚度为4纳米时,优化的太阳能电池的光电流要比只有LiF/Al的参比太阳能电池高20%以上。研究表明,纳米银膜产生的表面等离子体效应是增强聚合物太阳能电池光电池的主要原因。不过,银膜修饰的太阳能电池填充因子和开路电压要比参考电池低,最终使该类型电池效率降低。在银膜处增加的载流子复合可能是导致电池填充因子、开路电压和能量转化效率降低的重要原因。     

基于PTB7,Bis-PC_(70)BM,PC_(70)BM的高效率有机三元太阳能电池

我们将Bis-PC_(70)BM作为第二种电子受体混入基于PTB7:PC_(70)BM的聚合物太阳能电池中,制备了三元混合聚合物太阳能电池.相比于PC_(70)BM,Bis-PC_(70)BM的最低未占分子轨道(lowest unoccupied molecular orbital,LUMO)能级更高,所以掺入Bis-PC_(70)BM后器件的开路电压(V_(oc))得到了提升.Bis-PC_(70)BM在PTB7和PC_(70)BM之间起到桥梁的作用,因此在给体/受体界面创造了更多的电荷传递通道.而且从原子力显微镜中得到的结果来看,当混入质量比为3%的Bis-PC_(70)BM后薄膜的表面形貌更为平整,平均粗糙度从原来的1.87 nm降到了1.80 nm.能量转换效率(power conversion efficiency,PCE)达到7.00%,其中器件的V_(OC)为0.77 V,短路电流(J_(SC))为13.92 mA·cm~(-2),比PTB7:PC_(70)BM的器件效率6.07%提高了15%.     

混合溶剂对P3HT:PCBM基太阳能电池的影响

以poly(3-hexylthiophene)(P3HT)为电子给体材料,[6,6]-phenyl-C60-butyric acid methyl ester (PCBM)为电子受体材料,制备了纯氯苯(CB)溶剂、纯氯仿(CF)溶剂和氯苯/氯仿(CB/CF)不同比例混合溶剂的共混体系太阳能电池.研究了不同溶剂及不同比例混合的混合溶剂对电池性能的影响.结果表明:以CB/CF(3/1)为溶剂制备的器件,紫外可见吸收光谱和器件外量子效率曲线显示出红移现象,原子力显微图表明P3HT和PCBM间形成良好的相分离结构.在100 mW/cm2强度光照射下,其开路电压Voc为0.61 V短路电流密度Jsc为9mA/cm2,填充因子FF为57.9％,能量转换效率PCE为3.2％.     

使用PTB7作为阳极修饰层提高有机发光二极管的性能

采用poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl][3-?uoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]](PTB7)作为有机发光二极管器件的阳极修饰层,制备了结构为indium tin oxide(ITO)/PTB7(不同浓度)/N,N’-Bis(naphthalen-1-yl)-N,N’-bis(phenyl)benzidine(NPB,40 nm)/8-hydroxyquinoline(Alq3,60 nm)/LiF(1 nm)/Al的系列器件,同时研究了不同浓度的PTB7对器件性能的影响.PTB7的最佳浓度为0.25 mg/mL,器件性能得到明显的改善,起亮电压为4.3 V.当驱动电压为14.6 V时,最大亮度为45800 cd/m2,最大电流效率为9.1 cd/A.与没有PTB7修饰的器件相比,其起亮电压降低了1.9 V,最高亮度提升了78.5%.器件性能提高归因于PTB7的插入使得空穴注入和传输能力大大改善.     

利用Ag_2O/PEDOT:PSS复合缓冲层提高P3HT:PCBM聚合物太阳能电池器件性能的研究

利用Ag2O/PEDOT:PSS(聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐)作为复合阳极缓冲层,制备了P3HT:PCBM(聚(3-已基噻吩):富勒烯衍生物)聚合物太阳能电池器件,并通过改变氧化银插入层的厚度来分析复合缓冲层对器件性能的影响.实验发现,具有阳极缓冲层修饰的器件在退火处理后,光伏性能得到了改善.相比于单一PEDOT:PSS缓冲层的器件,Ag2O/PEDOT:PSS复合缓冲层可以增大器件的短路电流密度和外量子效率,使器件效率得到提高.分析表明,退火处理可以有效改善活性层的薄膜形貌,增加光的吸收和激子的解离,而较薄氧化银的引入,可以有效降低阳极处空穴的输运势垒,提高器件空穴收集效率,并能充当化学间隔层,提高器件光伏性能和稳定性.     

退火气压对于P3HT∶PCBM微观形貌及光伏性能的影响

通过精确设定不同的退火环境气压, 实现对P3HT(Poly(3-hexylthiophene -2,5-diyl)与PCBM(［6,6］-Phenyl C61 butyric acid methyl ester)体系中聚噻吩结晶度以及共混相分离程度的控制, 并在此基础上制备了结构为ITO/PEDOT∶PSS/P3HT∶PCBM/Al的正型光伏器件。在允许的压强设定范围内, 器件各项性能参数均随退火环境压强的增大表现出先升高后下降的变化规律, 并统一于气压设定为1 500 mTorr时获得最大值。从活性层的紫外-可见(UV-Vis)吸收光谱中发现P3HT在510 nm吸收峰以及550和600 nm肩峰附近的吸收强度随退火气压升高而增大, 在气压为1 500 mTorr时达到最高, 吸收强度的提升源于聚合物分子π—π堆叠的增加。原子力显微镜(AFM)进一步分析结果表明, 高气压环境(>1 000 mTorr)能够促进P3HT∶PCBM共混组分在退火过程中形成较大程度的相分离, 而当环境压强合适时(1 500 mTorr)适度的相分离利于聚合物形成良好有序结晶, 从而能够提升活性层内部载流子传输能力, 保证较高的短路电流与填充因子, 制备的器件也因此表现出良好的光伏性能, 光电转化效率达到3.56%。     

Effects of acetone-soaking treatment on the performance of polymer solar cells based on P3HT/PCBM bulk heterojunction

The improvement of the acetone-soaking treatment to the performance of polymer solar cells based on the P3HT/PCBM bulk heterojunction is reported. Undergoing acetone-soaking, the PCBM does not distribute uniformly in the vertical direction, a PCBM enrichment layer forms on the top of the active layer, which is beneficial to the collec- tion of the carriers and blocking the inverting diffusion carriers. X-ray photoelectron spectroscopy （XPS） analysis reveals that the PCBM weight ratio on the top of the active layer increases by 20% after the acetone-soaking treatment. Due to the nonuniform distribution of PCBM, the short-circuit current density, the open-circuit voltage, and the fill factor are enhanced significantly. Finally, the power conversion efficiency of the acetone-soaking device increases by 31% compared with the control device.     

Plasmonic effects and the morphology changes on the active material P3HT:PCBM used in polymer solar cells using Raman spectroscopy

There is no consensus yet that the enhancement effects of plasmonic device are predominantly caused by plasmonic effects or induced morphology changes in the optoelectronic `materials. Herein, we present a detailed Raman characterization of a typical organic P3HT:PCBM system comprising silver nanowires (Ag NWs) with different size, which can simultaneously study the plasmonic effects and the morphology changes. The direct comparison of the Raman spectra of non‐annealed and annealed samples indicates that the morphology of plasmonic samples has changed before annealing and the morphology of plasmonic samples and reference sample after annealing is not distinguishable. This indicates that the interaction between P3HT and Ag NWs with different size can be explained by plasmonic effects after annealing. Moreover, in‐situ Raman spectroscopy is used to study the morphology changes in plasmonic samples with different diameters of Ag NWs during heating process. This method can distinguish the plasmonic effects and morphology changes of plasmonic device. Copyright © 2016 John Wiley & Sons, Ltd.     

Improved performance of P3HT：PCBM solar cells by both anode modification and short-wavelength energy utilization using Tb（aca）3phen

The performance of P3HT:PCBM solar cells was improved by anode modification using spin-coated Tb(aca)3phen ultrathin films. The modification of the Tb(aca)3phen ultrathin film between the indium tin oxide(ITO) anode and the PEDOT:PSS layer resulted in a maximum power conversion efficiency(PCE) of 2.99% compared to 2.66% for the reference device, which was due to the increase in the short-circuit current density(Jsc). The PCE improvement could be attributed to the short-wavelength energy utilization and the optimized morphology of the active layers. Tb(aca)3phen with its strong down-conversion luminescence properties is suitable for the P3HT:PCBM blend active layer, and the absorption region of the ternary blend films is extended into the near ultraviolet region. Furthermore, the crystallization and the surface morphology of P3HT:PCBM films were improved with the Tb(aca)3phen ultrathin film. The ultraviolent–visible absorption spectra,atomic force microscope(AFM), and X-ray diffraction(XRD) of the films were investigated. Both anode modification and short-wavelength energy utilization using Tb(aca)3phen in P3HT:PCBM solar cells led to about a 12% PCE increase.     

Influence of small-molecule material on performance of polymer solar cells based on MEH-PPV:PCBM blend

In this work,the influence of a small-molecule material,tris(8-hydroxyquinoline) aluminum (Alq 3),on bulk het-erojunction (BHJ) polymer solar cells (PSCs) is investigated in devices based on the blend of poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) and [6,6]-phenyl-C 61-butyric acid methyl ester (PCBM).By dop-ing Alq 3 into MEH-PPV:PCBM solution,the number of MEH-PPV excitons can be effectively increased due to the energy transfer from Alq 3 to MEH-PPV,which probably induces the increase of photocurrent generated by excitons dissociation.However,the low carrier mobility of Alq 3 is detrimental to the efficient charge transport,thereby blocking the charge collection by the respective electrodes.The balance between photon absorption and charge transport in the active layer plays a key role in the performance of PSCs.For the case of 5 wt.% Alq 3 doping,the device performance is deteriorated rather than improved as compared with that of the undoped device.On the other hand,we adopt Alq 3 as a buffer layer instead of commonly used LiF.All the photovoltaic parameters are improved,yielding an 80% increase in power conversion efficiency (PCE) at the optimum thickness (1 nm) as compared with that of the device without any buffer layer.Even for the 5 wt.% Alq 3 doped device,the PCE has a slight enhancement compared with that of the standard device after modification with 1 nm (or 2 nm) thermally evaporated Alq 3.The performance deterioration of Alq 3-doped devices can be explained by the low solubility of Alq 3,which probably deteriorates the bicontinuous D-A network morphology;while the performance improvement of the devices with Alq 3 as a buffer layer is attributed to the increased light harvesting,as well as blocking the hole leakage from MEH-PPV to the aluminum (Al) electrode due to the lower highest occupied molecular orbital (HOMO) level of Alq 3 compared with that of MEH-PPV.     

Impact of nongeminate recombination on the performance of pristine and annealed P3HT:PCBM solar cells

Transient photovoltage (TPV) and voltage dependent charge extraction (CE) measurements were applied to poly(3‐hexyl‐thiophene) (P3HT):[6,6]‐phenyl‐C61 butyric acid methyl ester (PCBM) bulk heterojunction solar cells to analyze the limitations of solar cell performance in pristine and annealed devices. From the determined charge carrier decay rate under open circuit conditions and the voltage dependent charge carrier densities n (V), the nongeminate loss current j_loss of the device is accessible. We found that j_loss alone is sufficient to describe the j –V characteristics across the whole operational range, for annealed and, not yet shown before, also for the lower performing pristine solar cells. Even in a temperature range from 300 K to 200 K nongeminate recombination is found to be the dominant and, therefore, performance limiting loss process. Consequently, charge photogeneration is voltage independent in the voltage range studied. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigating the performance of P3HT:PCBM organic solar cells involving gamma-irradiated PEDOT:PSS layer

In this work, we investigated for the first time the characteristics of (poly (3-hexylthiopene) and [6, 6]-phenyl C61-butyric acid methyl ester) (P3HT:PCBM) blends-based organic solar cell with 1.25?mg/mL boric-acid (H₃BO₃)-doped poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer which is irradiated under the 40 Gray (Gy) dose of gamma (γ) ray. Experimental results showed that the parameters of solar cell improved with exposure to low-dose gamma radiation. In particular, it has provided a significant improvement in short-circuit current density (J_sc) and power conversion efficiency (PCE). About 49% increase in PCE to 1.22% and 40% increase in J_sc to 6.28?mA/cm² was obtained between the bare device and the device containing irradiated PEDOT:PSS:H₃BO₃. Also, it was determined that the H₃BO₃-doped PEDOT:PSS is more stable to temperature. More importantly, solar cell containing gamma-irradiated PEDOT:PSS:H₃BO₃ showed best performance comparing to conventional PEDOT:PSS-based cell.