磁台阶势垒结构中二维电子气的自旋极化输运

运用散射矩阵方法,研究了台阶磁势垒量子结构中二维电子气的隧穿输运性质.结果表明：在零偏压下,电子传输概率的自旋极化曲线随入射能量的增加而振荡衰减;随着磁台阶数的增加,电子传输概率的自旋极化度最大值减小,同时电子传输概率的自旋极化度振荡衰减也越来越慢;随着磁台阶的总宽度增加,电子传输概率的自旋极化曲线出现更明显的振荡,电子隧穿磁台阶势垒表现出明显的量子尺寸效应;在偏置电压的作用下,电子传输概率的自旋极化度在宽广的入射能量区出现明显的振荡增大,电子隧穿磁台阶势垒表现出更明显的自旋过滤效应. 关键词： 磁台阶势垒 自旋极化 自旋过滤     

自旋相关的电子隧穿和自旋极化

研究了电子的自旋相关的隧穿和极化。在外加磁场的作用下，自旋向上的电子与自旋向下的电子具有不同的隧穿系数。当电子的自旋方向与磁场方向相反时，其隧穿概率受到磁场的抑制而变小；反之，当两平行时，电子的了隧穿系数增大。这种差异可以用本中定义的自旋极化率来表示。本对不同磁场下的自旋极化率进行了计算，结果也表明当电子的动能较小，这种自旋极化的效应越显。     

含δ势垒的铁磁/半导体/铁磁异质结中的自旋输运和渡越时间

研究了含δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和渡越时间,讨论了量子尺寸效应和Rashba自旋轨道耦合效应对隧穿特性的影响.研究结果表明：δ势垒的存在降低了自旋电子的透射概率,改变了透射概率的位相.Rashba自旋轨道耦合强度的增加加大了透射概率的振荡频率.不同自旋取向的电子隧穿异质结时,渡越时间随着半导体长度、Rashba自旋轨道耦合强度以及两铁磁电极中的磁化方向的夹角的变化而变化. 关键词： δ势垒')" href="#">δ势垒 铁磁/半导体/铁磁异质结 Rashba自旋轨道耦合效应 渡越时间     

双量子阱中光子辅助电子自旋隧穿

采用单电子有效质量近似理论, Floquet理论和传递矩阵方法, 对包含时间周期场的双量子阱中单电子的自旋隧穿特性进行了研究, 对InP/InAs半导体材料进行了数值计算. 重点研究了Rashba型和Dresselhaus型自旋轨道耦合、量子阱结构以及偏压对电子隧穿的影响. 这些结果可以为设计和调控半导体自旋电子器件提供一定的理论依据. 关键词： 光子辅助隧穿 隧穿概率 量子阱     

化合物SmCo5的电子结构、自旋和轨道磁矩及其交换作用分析

用自旋极化的MS-Xα方法研究了稀土-过渡族化合物SmCo5₅的电子态密度、自 旋能级劈裂及原子磁矩.研究结果显示，由于化合物中Sm-Co间的轨道杂化效应，使Sm原子原来的5d00空轨道上占据了少量5d电子.由于Co(3d)-Sm(5d)电子间的直接交换作用，导致了Sm-Co间的磁性交换耦合，这是化合物中形成Sm-Co铁磁性长程序的一个重要原因.在SmCo5_{5化合物中存在6个能级呈现负交换耦合，导致了SmCo55化 关键词： 电子结构 自旋极化 原子磁矩 交换耦合}     

对称抛物势阱磁性隧道结中的自旋输运及磁电阻效应

研究了两端具有铁磁接触的对称抛物势阱磁性隧道结(F/SPW/F)中自旋相关的隧穿概率和隧穿磁电阻,讨论了量子尺寸效应和Rashba 自旋轨道耦合作用对自旋极化输运特性的影响.研究结果表明:隧穿概率和隧穿磁电阻随抛物势阱宽度的增加发生周期性的振荡.抛物势阱深度的增加减小了隧穿概率和隧穿磁电阻的振荡频率.Rashba 自旋轨道耦合强度的增加加大了隧穿概率和隧穿磁电阻的振荡频率.隧穿概率和隧穿磁电阻的振幅和峰谷比强烈依赖于两铁磁电极中磁化方向的夹角. 关键词： 磁性隧道结 Rashba 自旋轨道耦合 隧穿概率 隧穿磁电阻     

多层结构双自旋过滤隧道结中的电子输运特性

在转移矩阵方法及Mireles和Kirczenow的量子相干输运理论的基础上,研究了正常金属层/磁性半导体层/非磁绝缘层/磁性半导体层/正常金属层型双自旋过滤隧道结中Rashba自旋轨道耦合效应和自旋过滤效应对自旋相关输运的影响.讨论了隧穿磁电阻（TMR）、隧穿电导与各材料层厚度、Rashba自旋轨道耦合强度以及两磁性半导体中磁矩的相对夹角θ之间的关系.研究表明：含磁性半导体层的双自旋过滤隧道结由于磁性半导体层的自旋过滤效应和Rashba自旋轨道耦合作用可获得极大的TMR值.另外TMR和隧穿电导随着Rashba自旋轨道耦合强度的变化而振荡,振荡周期随Rashba自旋轨道耦合强度的增大逐渐减小. 关键词： 双自旋过滤隧道结 Rashba自旋轨道耦合 隧穿磁电阻 隧穿电导     

Ⅱ-Ⅵ族稀磁半导体多层结构中的自旋极化隧穿

采用转移矩阵法和Airy函数,研究了ZnSe/ZnMnSe/ZnSe/ZnBeSe/ZnSe/ZnBeSe/ZnSe异质结构的自旋极化输运。在外加偏压和磁场对电子透射系数和自旋极化率的影响方面,所得到的结论显现出复杂而有趣的特性。磁场对自旋向上和向下电子隧穿的影响是不同的:对于自旋向上情况,出现双共振向单共振转换现象。     

铁磁/半导体(绝缘体)/铁磁异质结中渡越时间与两铁磁层磁矩夹角变化的关系

在群速度概念的基础上, 研究了自旋极化电子隧穿通过铁磁体/半导体(绝缘体)/铁磁体异质结时, 渡越时间随两端铁磁层中磁矩夹角变化的关系. 研究结果表明: 当中间层为半导体层时, 由于半导体层中的Rashba自旋轨道耦合强度的影响, 自旋向上电子和自旋向下电子的渡越时间差会在两铁磁层相对磁矩夹角为π/2和3π/2附近出现一个极小值. 当中间层为绝缘体层时, 势垒高度的变化会导致不同取向的自旋极化电子渡越时间差的变化, 并当势垒高度超过一临界值时发生翻转. 关键词： 铁磁体/半导体(绝缘体)/铁磁体异质结 Rashba自旋轨道耦合强度 渡越时间 磁矩     

Rashba自旋轨道耦合作用下电荷流散粒噪声与自旋极化的关系研究

根据存在自旋轨道耦合时基于散射理论的电流表达式和散粒噪声表达式,并利用自旋密度矩阵推导出沿自旋量子化坐标的自旋极化率表达式.解析计算了单通道的情况,发现自旋极化率和电荷流散粒噪声无关.由于多通道解析推导的困难,使用非平衡格林函数技巧,数值计算了包含自旋轨道耦合效应的纯净二维电子气的多通道情况.分别改变偏压、自旋轨道耦合系数、导体长度,研究了这三种不同条件下的自旋极化率与电荷流散粒噪声Fano因子的相关性.两者的相关性表明,相关性定量关系的建立可能为自旋极化的全电学检测提供新思路. 关键词： 散粒噪声 自旋极化 Rashba自旋轨道耦合 散射矩阵     

Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures

The effect of negative electric field on spin-dependent tunneling in double barrier heterostructures of III–V semiconductor is theoretically investigated. The transfer matrix approach is used by considering Dresselhaus and induced-Rashba effect to calculate the barrier transparency and polarization efficiency. Cent percent polarization efficiency can be achieved for the negative electric field by increasing the width of the potential barrier. The separation between spin-up and spin-down resonances are evaluated. The separation between spin resonances and tunneling lifetime of electrons are observed for various negative electric fields as well as for various barrier widths. The linear variation of spin separation and tunneling lifetime of electrons are observed as a function of negative electric field.     

Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In_xGa_(1−x)As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended.     

Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band.     

Effect of pressure and temperature on spin-dependent tunneling in InAs/GaAs heterostructure with Dresselhaus spin-orbit interaction

Using the transfer matrix, spin-dependent electron tunneling was studied in InAs/GaAs double barrier symmetrical heterostructure. The effect of Dresselhaus spin-orbit interaction in this system was analysed as a function of pressure and temperature. Both pressure and temperature influences the polarization efficiency, barrier transparency and dwell time of electrons. The increasing pressure increases polarization efficiency, tunneling life time and dwell time of electrons, where as the increasing temperature decreases the same parameters. The results might be helpful for the fabrication of spin-devices.     

Complete experiment in eN-elastic scattering, in presence of two-photon exchange

Using a general parametrization of the spin structure of the matrix element for elastic eN-scattering, in terms of three independent complex amplitudes, we found the expressions for all polarization observables, in electron–proton elastic scattering. This allows to suggest possible methods to measure the nucleon electromagnetic form factors, in presence of two-photon exchange. We show that the measurements of the differential cross section for electron and positron nucleon elastic scattering, in the same kinematical conditions, allows to extract the nucleon electromagnetic form factors. The same is correct for the polarization method, with the measurement of the P_x,z components of the final nucleon polarization (for the scattering of longitudinally polarized electrons and positrons). An alternative way, in absence of positron beam, is to measure a definite set of T-odd polarization observables, which includes three different experiments or only T-even observables, with five independent experiments. In both cases, the ratio G_E(Q²)/G_M(Q²) is related to quantities of the order of and requires different polarization experiments with very high accuracy.     

一种可用于极化~3He实验的新型磁场系统

原子核自旋极化的~3He气体已被深入研究并广泛用于各种科学实验.在过去的极化~3He实验中,为了减小磁场梯度对纵向弛豫时间的影响,通常会建造大尺寸的亥姆霍兹线圈来提供所需均匀度的主磁场环境.本文通过计算得到了新的六正方形线圈系统,可以为极化~3He实验提供小型高均匀性的磁场装置.其中线圈系√统内部超过30%的区域磁场梯度满足(|▽B_x|~2+|▽B_y|~2)/B_0 10~(-4)cm~(-1),这一均匀区域比例超过了现在所有用于极化~3He实验的线圈装置.对于其他需要大均匀区域磁场环境的研究实验,新的六线圈系统也具有很好的应用价值.     

1/f-type fluctuation of electron transmission in one-dimensional disordered systems

A universal feature of 1/f-type fluctuation is numerically observed in the system-size n dependence of the transmission amplitude t_n in various one-dimensional disordered systems. The power spectrum P(f) of the transmission coefficient T(n)=|t_n|² exhibits the power law of 1/f², irrespective to the type of disorder of the system whether it is of short-range or of long-range correlation. That of the phase θ_t(n) of t_n also does the universal power law of 1/f^1.4.     

Electron-spin polarization in a non-magnetic heterostructure

The spin dependent electron transmission through a non-magnetic III-V semiconductor symmetric well is studied theoretically so as to investigate the output transmission current polarization at zero magnetic field. Transparency of electron transmission is calculated as a function of electron energy as well as the well width, within the one electron band approximation along with the spin-orbit interaction. Enhanced spin-polarized resonant tunneling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level is observed. We predict that a spin-polarized current spontaneously emerges in this heterostructure. This effect could be employed in the fabrication of spin filters, spin injectors and detectors based on non-magnetic semiconductors.     

Spin-dependent Seebeck effect in Aharonov–Bohm rings with Rashba and Dresselhaus spin–orbit interactions

We theoretically investigate the spin-dependent Seebeck effect in an Aharonov–Bohm mesoscopic ring in the presence of both Rashba and Dresselhaus spin–orbit interactions under magnetic flux perpendicular to the ring. We apply the Green's function method to calculate the spin Seebeck coefficient employing the tight-binding Hamiltonian. It is found that the spin Seebeck coefficient is proportional to the slope of the energy-dependent transmission coefficients. We study the strong dependence of spin Seebeck coefficient on the Fermi energy, magnetic flux, strength of spin–orbit coupling, and temperature. Maximum spin Seebeck coefficients can be obtained when the strengths of Rashba and Dresselhaus spin–orbit couplings are slightly different. The spin Seebeck coefficient can be reduced by increasing temperature and disorder.     

一端附壁高分子链的Monte Carlo研究

采用简立方格点上的Monte Carlo模拟,研究一端被无限大不可穿透平面壁吸附的高分子链的均方末端距<R²>,以及高分子链的质量中心到平面吸附壁的平均距离<Z>,与链长N、参数u(u=e^-ε/kT,ε是链骨架原子间的相互作用能量,k是玻耳兹曼常数,T是热力学温度)的关系。结果表明:<R²>和<Z>都服从标度律,<R²>=αN^γ,<Z>=βN^η,其中,γ、η、α、β都是u的函数;u从1减小到0.5,则γ从1.01增大到1.19,η从0.51增大到0.60.