退火处理对ZnO纳米线紫外探测器性能的改善

通过介电泳方法定向排列了ZnO纳米线,制作了自组装有序的纳米线紫外探测器.为了适合在金叉指电极上排列,用水热方法设计生长了超长的ZnO纳米线,并通过700℃的热退火处理,使得可利用的表面缺陷增多.通过研究器件的光致发光光谱和光响应,发现光、暗电流比和响应恢复时间有显著提高,并分析了其中可能的机理.     

低温CVD法在玻璃衬底上制备ZnO纳米线阵列

采用化学气相沉积(CVD)法在镀Cr(20nm)的玻璃衬底上,低温制备了ZnO纳米线阵列。利用扫描电子显微镜(SEM)和X射线衍射(XRD)对样品的表面形貌和微结构进行了分析表征。结果表明:源分解温度1350℃,衬底温度450～500℃,氩气流量为35sccm时,ZnO纳米线在玻璃衬底上呈现有序生长;XRD谱图中只观测到ZnO(002)衍射峰。表明制备的纳米线阵列具有高度c轴择优取向生长特性和较高的结晶质量。     

ZnO基紫外探测器研究进展

近年来,直接带隙宽禁带半导体ZnO（3.37 eV）以其优越的光电特性而成为紫外探测领域研究中的新热点.文章介绍了不同类型的ZnO基紫外光敏探测器的结构和性能,并对ZnO基紫外光敏探测器的最新研究进展和应用前景进行探讨和展望.     

MSM结构ZnO紫外探测器的制备与性质

采用射频磁控溅射在石英衬底上制备了c轴择优取向的ZnO薄膜,利用蚀刻技术制备了MSM结构的光导型紫外探测器。在3V偏压下,器件的暗电流小于250nA,光响应峰值在370nm,响应度是0.34A/W。其紫外(360nm)与可见光(420nm)的抑制比为4个数量级。器件的光响应时间上沿仅为20ns。     

树形结构Si/ZnO纳米线阵列的制备及光学性能

用一种低成本的方法制备出了树形结构Si/ZnO纳米线阵列。首先在室温条件下用金属辅助化学腐蚀法在Si(100)衬底上制备了Si纳米线阵列,Si纳米线的直径尺寸及分布都很均匀,通过改变腐蚀时间,能够得到高度不同的Si纳米线阵列。利用磁控溅射在Si纳米线表面制备一层ZnO薄膜,然后利用水热法在Si纳米线阵列上生长了ZnO纳米线。通过扫描电子显微镜(SEM)、能谱分析仪(EDS)和光致发光(PL)测试对样品进行了表征。通过这种方法制备的Si/ZnO复合结构在太阳能电池、光催化等领域有潜在应用价值。     

ZnO 紫外探测器的研究

利用水热法生长的N型优质ZnO晶体材料蒸镀了Au、Ag、Al金属,制备出金属-半导体-金属型(MSM)ZnO紫外探测器,测试了五种接触类型的ZnO紫外探测器(Au-ZnO-Au、Ag-ZnO-Ag、Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al)在365nm紫外光光照前后的I-V特性曲线。实验表明Au-ZnO-Au 型、Ag-ZnO-Ag型的探测器的光电流是暗电流的100 万倍,因此,Au-ZnO-Au型、Ag-ZnO-Ag型的ZnO紫外探测器性能比Au-ZnO-Al、Ag-ZnO-Al、Al-ZnO-Al型的优越。ZnO材料的电阻率对ZnO紫外探测器的光电流有较大的影响。在相同偏压下,电阻率越大,探测器的光电流越小。ZnO ultraviolet(UV) detectors with Metal-Semiconductor-Metal(MSM) structure were fabricated by the vacuum evaporation of Au, Ag, and Al on the n-type ZnO single crystal, which was grown with hydrothermal synthesis method. Five types of MSM ZnO detectors(Au-ZnO-Au, Ag-ZnO-Ag, Au-ZnO-Al, Ag-ZnO-Al,Al-ZnO-Al) were illuminated with 365 nm UV light respectively, and their corresponding I-V(Current-Voltage) characteristics were measured. The UV photocurrent values for Au-ZnO-Au and Ag-ZnO-Ag detectors were 1x106 times than their dark current values, and these facts imply that the Au-ZnO-Au and Ag-ZnO-Ag detectors were rather good UV detectors compared to Au-ZnO-Al, Ag-ZnO-Al, Al-ZnO-Al detectors. The photocurrent of the MSM ZnO detectors was also sensitive to the cubic resistance of the ZnO crystal. And it’s found that the higher resistance rate the ZnO crystal the smaller photocurrent value the detector under the same working voltage.     

高取向As掺杂ZnO纳米线阵列的制备与表征

在不采用任何金属催化剂的条件下,运用化学气相沉积法,在Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列.样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰,表明样品具有较好的结晶质量.场发射扫描电镜(FE-SEM)观察表明,As掺杂ZnO纳米线阵列具有均一的直径和长度,其顶部和根部直径分别为70 nm和1...     

ZnO纳米线紫外探测器的制备和快速响应性能的研究

一维ZnO纳米结构由于具有比表面积大、室温下具有大激子结合能等特点而受到广泛关注. 但是如何实现纳米结构的器件一直是目前研究的一个挑战. 文章通过水热方法, 在玻璃衬底上实现了ZnO纳米线横向生长, 并制备出基于ZnO纳米线的金属-半导体-金属紫外探测器. 测量结果显示器件在365 nm处探测器的响应度达到5 A/W, 并且制备的探测器在空气中对紫外光照具有快速的响应, 其上升时间约4 s, 下降时间约5 s, 这与ZnO纳米线中的氧空位吸附和脱附水分子相关.     

ZnO薄膜的性质对水热生长ZnO纳米线阵列的影响

用水热法在ZnO薄膜上制备了直径、密度及取向可控的ZnO纳米线阵列。ZnO薄膜是通过原子层沉积(ALD)方法制备并在不同温度下退火处理得到的,退火温度对ZnO薄膜的晶粒尺寸、结晶质量和缺陷性质有很大的影响。而ZnO薄膜的性质对随后生长的ZnO纳米线的直径、密度及取向能起到调节控制的作用。通过扫描电子显微镜(SEM)、X射线衍射(XRD)仪和光致发光(PL)测试对ZnO薄膜和ZnO纳米线进行了表征。最后得到的垂直取向的ZnO纳米线阵列适合在发光二极管和太阳能电池等领域使用。     

One step synthesis of vertically aligned ZnO nanowire arrays with tunable length

Length control of ZnO nanowire arrays is a valuable concern for both fundamental research and future device application. In this article, vertically aligned ZnO nanowire arrays were synthesized by a seed layer catalyzed vapor phase transport method in a single experiment cycle. The length of these nanowire arrays exhibits a quasi-continuous evolution. It was found that the type and flow rate of carrier gas have a significant influence on the length modulation of ZnO arrays along the tube. A feasible route to tune the length of ZnO nanowire arrays from several micrometers to nearly 100 μm could be achieved by adjusting proper deposition position and carrier gas.     

TiO2纳米线阵列干涉传感器

开发一种新型TiO₂纳米线阵列干涉传感器。首先,通过水热合成法在FTO导电玻璃表面制备了TiO₂纳米线阵列薄膜。然后,以此复合结构作为传感芯片,利用Kretschmann 棱镜耦合结构,构建了基于Kretschmann结构的波长调制型薄膜干涉传感器。最后,以氯化钠水溶液为待测液体介质研究了该传感器对环境介质折射率的灵敏性能。结果表明：该传感器对1.333 5~1.360 4范围内的折射率有很好的响应。TM模式下,在0~3%与3~15%浓度范围内,氯化钠浓度与该传感器的反射光强度分别呈现了良好的线性关系。TE模式下,在0~3%浓度范围内,氯化钠浓度与吸收强度存在良好的线性关系,而波长基本不变;而在3~15%浓度范围内,随着氯化钠浓度的增加,波长逐渐红移,氯化钠浓度与波长也具有良好的线性关系。     

The fabrication and characterization of ZnO UV detector

ZnO films were deposited on GaAs substrates by radio frequency (rf) magnetron sputtering followed by an ambient-controlled heat treatment process for arsenic doping. In Hall measurements, the As-doped ZnO films showed the characteristics of p-type semiconductor. The ZnO thin film p–n homojuctions were then fabricated to investigate the electrical properties of the films. The p–n homojunctions exhibited the distinct rectifying current–voltage (I–V) characteristics. The turn-on voltage was measured to be 3.0 V under the forward bias. When ultraviolet (UV) light (λ = 325 nm) was irradiated on the p–n homojunction, photocurrent of 2 mA was detected. Based on these results, it is proposed that the p–n homojunction herein is a potential candidate for UV photodetector and optical devices.     

Control growth of catalyst-free high-quality ZnO nanowire arrays on transparent quartz glass substrate by chemical vapor deposition

ZnO nanowire arrays have been successfully synthesized on transparent quartz glass substrate by chemical vapor deposition technique. Our work demonstrates the critical role of the growth temperature and the buffer layer on the effective control of the morphology of ZnO nanowires. A proper growth temperature and the thicker buffer layer could promise the good alignment and high density of the nanowires. The room-temperature photoluminescence spectrum shows that the buffer layer has also great effects on optical properties of ZnO nanowire arrays. The integrated intensity ratio [I_UV/I_{Visible band}] of the ZnO UV emission peak to visible band emission decreases with the increase of the thickness of the buffer layers. The obtained nanowire arrays have transmittance of above 50% in the visible region.     

Fabrication and characteristics of a surface acoustic wave UV sensor based on ZnO thin films grown on a polycrystalline 3C-SiC buffer layer

Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) ultraviolet (UV) sensing using a magnetron sputtering system. X-ray diffraction (XRD) and photoluminescence (PL) spectra showed that the ZnO film grown on 3C-SiC/Si had a dominant c-axis orientation, a lower residual stress, and higher intensity of luminescence at 380 nm of ZnO thin film. The SAW resonator UV detector were fabricated on ZnO/Si structures with a 3C-SiC buffer layer. The SAW resonator exposed under UV illumination had a linear response with sensitivity of 85 Hz/(μW/cm²) in ZnO/3C-SiC/Si structures, as compared to 25 Hz/(μW/cm²) in ZnO/Si structures with UV intensity varied until 600 μW/cm².     

Resonantly excited ZnO nanowires for fabrication of high sensitivity gas sensor

A novel approach for gas sensing based on mechanical resonance of ZnO nanowires is reported. For this purpose, ZnO nanowires were grown between comb-like electrodes using a novel oxygen plasma treatment approach. Then gas measurements were carried out at different agitating frequency. Results show an improvement in gas sensitivity of resonantly excited ZnO nanowires. Our results open up a promising approach to fabricate high sensitivity gas sensor. Also we have introduced an alternative frequency modulation gas detection method here.     

Effect of Mn-doping on the growth mechanism and electromagnetic properties of chrysanthemum-like ZnO nanowire clusters

Chrysanthemum-like ZnO nanowire clusters with different Mn-doping concentrations are prepared by a hydrothermal process. The microstructure, morphology and electromagnetic properties are characterized by x-ray diffractometer high-resolution transmission electron microscopy (HRTEM), a field emission environment scanning electron microscope (FEESEM) and a microwave vector network analyser respectively. The experimental results indicate that the as-prepared products are Mn-doped ZnO single crystalline with a hexagonal wurtzite structure, that the growth habit changes due to Mn-doping and that a good magnetic loss property is found in the Mn-doped ZnO products, and the average magnetic loss tangent tanδ_m is up to 0.170099 for 3% Mn-doping, while the dielectric loss tangent tanδ_e is weakened, owing to the fact that ions Mn^{2 +} enter the crystal lattice of ZnO.     

两步法制备空间取向高度一致的ZnO纳米棒阵列

采用两步法,即先用磁控溅射在Si(100)表面生长一层ZnO籽晶层、再利用液相法制备空间取向高度一致的ZnO纳米棒阵列.用扫描电子显微镜、X射线衍射、高分辨透射电子显微镜和选区电子衍射对样品形貌和结构特征进行了表征.结果表明,ZnO纳米棒具有垂直于衬底沿c轴择优生长和空间取向高度一致的特性和比较大的长径比,X射线衍射的(XRD)(0002)峰半高宽只有0.06°,选区电子衍射也显示了优异的单晶特性.光致发光谱表明ZnO纳米棒具有非常强的紫外本征发光和非常弱的杂质或缺陷发光特性. 关键词： ZnO纳米棒阵列 ZnO籽晶层 两步法 液相生长