Mo/Si软X射线多层膜的界面粗糙度研究

用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo/Si多层膜系列, 利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo/Si多层膜的新鲜表面近似等同于同一多层膜的内界面,通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加,Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小,多层膜的峰值反射率先增加后减小。     

Mo/Si软X射线多层膜的界面粗糙度研究

 用磁控溅射法分别制备了以Mo膜层和Si膜层为顶层的Mo/Si多层膜系列, 利用小角X射线衍射确定了各多层膜的周期厚度。以不同周期数的Mo/Si多层膜的新鲜表面近似等同于同一多层膜的内界面,通过原子力显微镜研究了多层膜界面粗糙度随膜层数的变化规律。并在国家同步辐射实验室测量了各多层膜的软X射线反射率。研究表明：随着膜层数的增加,Mo膜层和Si膜层的界面粗糙度先减小后增加然后再减小,多层膜的峰值反射率先增加后减小。     

磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层...     

磁控溅射制备的W，WSi2, Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜。利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值。结果表明：W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力。WSi2单层膜和WSi2/Si周期多层膜均表现为压应力,没有应力突变,应力特性最为稳定。因此,WSi2/Si材料组合是研制大膜对数X射线多层膜较好的材料组合。     

Mo/Si多层膜小角X射线衍射结构表征

为了实现对Mo/Si多层膜的结构表征,测量了多层膜样品的小角X射线衍射谱。介绍了小角X射线衍射谱的分析方法,包括Bragg峰值拟合法,傅里叶变换法,反射谱拟合法。Bragg峰值拟合法和反射谱拟合法得到多层膜的周期厚度为7.09nm,两种模型的反射谱拟合法得到界面的粗糙度(扩散长度)为0.40～0.41nm(Si在Mo上),0.52～0.70nm(Mo在Si上),前者要比后者小,这与透射电镜法(TEM)得到的结果0.40nm(Si在Mo上),0.6～0.65nm(Mo在Si上)是一致的。通过基于扩散模型的反射谱拟合法得到的折射率剖面也与由高倍率透射电镜(HRTEM)积分得到的灰度值剖面在趋势上是一致的。通过X射线衍射谱和TEM图像对Mo/Si多层膜进行综合表征,得到了多层膜的精细结构信息,这对多层膜制备工艺的优化具有十分重要的意义。     

研究扩散屏障层对Mo/Si多层膜软X射线反射率影响的模拟

在特定波长下,用四层结构模型模拟了Mo/Si多层膜的软X射线反射率.研究了扩散屏障层dMo-on-Si和dSi-on-Mo对Mo/Si多层膜软X射线反射率的影响.研究发现,扩散屏障层并不总是损害Mo/Si多层膜的光学性能,通过合理设计dMo-on-Si和dSi-on-Mo厚度,增加dMo-on-Si与dSi-on-Mo的比值,也能提高多层膜的软X射线反射率.     

Pd2Si的生成对Pd/Si多层膜衍射性能的影响

本文研究了Pd₂Si的生成对周期性Pd/Si多层膜X射线衍射性能的影响。X射线衍射强度的测量数据表明Pd₂Si的生成对长周期多层膜的衍射强度影响不大,但对短周期多层膜衍射强度的影响较大。在引入折射率修正后,我们不仅用单个峰的位置计算了多层膜的周期,而且还用了以两个峰的位置联立消去折射率修正的方法计算了多层膜的周期,前者的误差大于后者。模拟计算的结果说明:均匀Pd₂Si层的生成不足以解释Pd/Si多层膜衍射强度随退火温度的变化,界面的平整化或粗糙化是影响衍射强度的另一个要素。 关键词：     

软X射线光学和周期性多层膜

本文介绍了软Ｘ射线的基本性质，它们和可见光及Ｘ射线的性质有很大的差异．这些性质决定了软Ｘ射线光学元件的特殊性．过去发展的软Ｘ射线光学元件不够理想，影响了软Ｘ射线光学的发展．近十年来发展的由轻、重元素组成的周期性多层膜使局面大为改观．多层膜的结构研究有助于指明提高多层膜质量的方向．     

软X射线多层膜及多层膜光栅的研究进展

对目前的几种软Ｘ射线光学元件的性能作了简要的阐述和分析。综合介绍了多层膜作为软Ｘ射线光学元件的新进展。同时对多层膜光栅这种新型软Ｘ射线光学元件的原理、性能、制作工艺进行了详细的说明。     

软X射线多层膜与衰减膜研究

 本文采用随机数的方法，发展了一种普适的多层膜设计方法，这种方法除可设计一般的周期多层膜，更重要的是它可以根据选定的评价因子，设计不同要求的非周期多层膜。用磁控溅射方法完成软X射线多层膜制备，X射线衍射、卢瑟福背散射、俄歇电子谱和反射率的相对测试用来表征多层膜结构和特性，所得结果说明多层膜的结构完整，周期参数正确。用离子束溅射方法成功地制备了有一定反射率和透过率的软X射线半反半透分束镜；分析了Ag和Zr衰减膜中的杂质含量与分布及其对衰减膜特性的影响，并对衰减系数进行了修正，为实验提供优质的衰减膜。     

Reduction of interlayer thickness by low-temperature deposition of Mo/Si multilayer mirrors for X-ray reflection

Thin interlayers are essential for high-quality multilayer optics. We present the first investigation of reducing the interlayer thickness of Mo/Si multilayer structures by cooling the substrate with liquid nitrogen during the deposition. The structures were deposited by means of electron beam evaporation. Even after warming up to room temperature prior to analysis, the interlayers that formed upon cryogenic deposition were found to be approximately 60% thinner compared to room temperature deposition. The interlayer thickness reduction at low temperature and its preservation upon warming up are attributed to a lower mobility of adatoms, reduced surface segregation of Si during Mo-on-Si growth, and/or crystallization of Mo.     

Thermal behaviour of Co/Si/W/Si multilayers under rapid thermal annealing

The e-beam deposited multilayers (MLS) were studied under rapid thermal annealing (RTA) between 250°C and 1000°C during 30 s. MLS with five Co/Si/W/Si periods, each 13.9 nm (MLS1) and 18 nm (MLS2) were deposited onto oxidized Si substrates. Samples were analyzed by X-ray diffraction, hard and soft X-ray reflectivity measurements and grazing incidence X-ray diffuse scattering. The MLS period, interface roughness and its lateral and vertical correlations were obtained by simulation of the hard X-ray reflectivity and diffuse scattering spectra. The MLS1 with thinner Co layers is more temperature resistant. However, its soft X-ray reflectivity is smaller. The results show that this is because of shorter lateral and vertical correlation lengths of the interface roughness which may considerably influence the X-ray reflectivity of multilayers.     

多层膜软X光反射镜的研制

本文介绍了镍-碳多层膜软X光反射镜的设计与制造方法,特别是膜厚监控法.用俄歇谱仪分析了一个样品的剖面情况;对一些样品在1.54(?)的衍射特性和在软X光区的反射率进行了测量并与理论计算结果作了比较.     

用不同的Mo靶溅射功率制备Mo/Si多层膜

 用磁控溅射法制备了周期厚度和周期数均相同的Mo/Si多层膜,用原子力显微镜和小角X射线衍射分别研究了Mo靶溅射功率不相同时,Mo/Si多层膜表面形貌和晶相的变化。随后在国家同步辐射实验室测量了Mo/Si多层膜的软X射线反射率。研究发现,随着Mo靶溅射功率的增大,Mo/Si多层膜的表面粗糙度增加,Mo的特征X射线衍射峰也增强,Mo/Si多层膜的软X射线峰值反射率先增大后减小。     

Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN

A W/Ti/Au multilayer scheme has been fabricated for achieving thermally stable low-resistance ohmic contact to n-type GaN (4.0 × 10¹⁸ cm⁻³). It is shown that the as-deposited W/Ti/Au contact exhibits near linear I-V behaviour. However, annealing at temperature below 800 °C the contacts exhibit non-linear behaviour. After annealing at a temperature in excess of 850 °C, the W/Ti/Au contact showed ohmic behaviour. The W/Ti/Au contact produced specific contact resistance as low as 6.7 × 10⁻⁶ Ω cm² after annealing at 900 °C for 1 min in a N₂ ambient. It is noted that the specific contact resistance decreases with increase in annealing temperature. It is also noted that annealing the contacts at 900 °C for 30 min causes insignificant degradation of the electrical and thermal properties. It is further shown that the overall surface morphology of the W/Ti/Au stayed fairly smooth even after annealing at 900 °C. The W/Ti/Au ohmic contact showed good edge sharpness after annealing at 900 °C for 30 min. Based on the Auger electron spectroscopy and glancing angle X-ray diffraction results, possible explanation for the annealing dependence of the specific contact resistance of the W/Ti/Au contacts are described and discussed.     

Si／SiNx／SiO2多层膜的光致发光

采用射频磁控溅射法,制备了具有强光致可见发光的纳米Si/SiNx/SiO2多层膜,利用傅立叶红外吸收(FTIR)谱,光致发光(PL)谱对其进行了研究。用260nm光激发得到的PL谱中观察到高强度的392nm(3.2eV)和670nm(1.9eV)光致发光峰,分析认为它们分别来自于缺陷态≡Si-到价带顶和从导带底到缺陷态≡Si-的辐射跃迁而产生的光致激发辐射复合发光。PL谱中只有370nm(3.4eV)处发光峰的峰位会受退火温度的影响,结合FTIR谱认为370nm发光与低价氧化物—SiOx(x<2.0)结合体有密不可分的关系。当SiO2层的厚度增大时,发光强度有所增强,800℃退火后出现最强发光,认为具有较大SiO2层厚度的Si/SiNx/SiO2结构多层膜更有利于退火后形成Si—N网络,能够得到更高效的光致发光。用量子限制-发光中心(QCLC)模型解释了可能的发光机制,并建立了发光的能隙态(EGS)模型。     

Fe/Si多层膜的层间耦合与界面扩散

对以本征Si及重掺杂ｐ型和ｎ型Si作为中间层的Fe/Si多层膜的层间耦合进行研究，并通过退火，增大Fe，Si之间的扩散，分析界面扩散对层间耦合的影响. 实验结果表明，层状结构良好的制备态的多层膜，Fe，Si之间也存在一定程度的扩散，它是影响层间耦合的 主要因素，远远超过了半导体意义上的重掺杂，使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现，在一定范围内增大Fe，Si之间的扩散，即使多层膜的层状结构已经有了相当的退化，Fe/Si多层膜的反铁磁耦合强度基本保持不变. 关键词： Fe/Si多层膜 层间耦合 界面扩散     

Structural and magnetic study of swift heavy ion irradiated W/Fe multilayer structure

The present study reports the effect of swift heavy ion irradiation on structural and magnetic properties of sputtered W/Fe multilayer structure (MLS) having bilayer compositions of [W(10 Å)/Fe(20 Å)]_10BL. The MLS is irradiated by 120 MeV Au⁹⁺ ions of fluences 1×10¹³ and 4×10¹³ ions/cm². Techniques like X-ray reflectivity (XRR), cross-sectional transmission electron microscopy (X-TEM) and DC magnetization with a vibrating sample magnetometer (VSM) are used for structural and magnetic characterization of pristine and irradiated MLS. Analysis of XRR data using Parratt’s formalism shows a significant increase in W/Fe layer roughness. X-TEM studies reveal that intra-layer microstructure of Fe layers in MLS becomes nano-crystalline on irradiation. DC magnetization study shows that with spacer layer thickness interlayer coupling changes between ferromagnetic to antiferromagnetic.