集成电路中的物理问题讲座——第八讲 MOS物理基础

金属-氧化物-半导体(MOS)系统,它不仅作为金属-氧化物-半导体场效应晶体管(MOSFET)在超大规模集成电路中占有主导地位,而且也是半导体器件、材料和工艺方面的重要研究手段之一.故对它的研究日益发展、深入.本文仅从集成电路的角度出发,着重介绍与MOS系统电学特性有关的基础知识,而未涉及工艺制造问题. 一、半导体表面空间电荷区[1-3] 表面势的存在,由于自由载流子数目偏离平衡值,将使表面层中形成非电中性区,即表面空间电荷区.这里面的载流子分布、电位分布均与体内不同,呈现一系列的表面物理效应.1.平衡态、载流子非简并 这是一种最简…     

后退火处理对铟锡氧化物表面等离激元共振特性的影响

近年来,表面等离激元光子学发展迅速,并取得了众多新成果.重掺杂半导体材料的表面等离激元共振性质的研究,也得到了人们越来越多的关注.本文通过纳米球刻印技术制备准三维二氧化硅纳米球阵列,在阵列上沉积铟锡氧化物薄膜,通过不同条件下的后退火处理改变铟锡氧化物薄膜的载流子浓度和载流子迁移率,并研究随着材料性质的改变其相应表面等离激元共振特性的变化规律.结果表明：退火处理均使铟锡氧化物薄膜的晶粒长大,光学透过率增加;在空气中退火会导致铟锡氧化物薄膜的载流子浓度减少,其表面等离激元共振峰红移;而真空退火则使铟锡氧化物薄膜的载流子浓度增加,共振峰蓝移.这些研究结果可为后续铟锡氧化物表面等离激元材料及器件的研究提供科学依据和实际指导.     

钙钛矿铁电半导体的光催化研究现状及其展望

钙钛矿材料可以分为ABO_3氧化物和或I)卤化物两大类,它们都具有丰富的物理性质和优异的光电性能,比如铁电性和光催化性能.本文介绍了和等铁电半导体光催化材料和异质结的制备方法,总结了它们在光电催化方面的研究进展.目前研究者已经针对氧化物光催化材料做了各种研究,包括:降低吸光层铁电材料的带隙,制备铁电/窄带半导体吸光层异质结,制备比表面积很大的纳米片、纳米棒或者其他纳米结构,以便吸收更多可见光;让铁电极化及其退极化场垂直于光催化工作电极表面,通过铁电/半导体异质结能带弯曲提供内电场,通过外电场进行光电催化,从而通过内、外电场高效分离光生-电子空穴对;通过光催化或者光电催化降解染料、分解水制氢、将CO2转换为燃料;通过铁电、热释电和压电协同效应提高催化效应和能量转换效率等卤素钙钛矿具有优异的半导体性质,其铁电性可能是引起超长的少数载流子寿命和载流子扩散长度的原因.通过优化光催化多层膜结构并添加防止电解液渗透的封装层可以避免被电解液分解,从而制备了具有很高能量转换效率的光电催化结构.最后,我们分析和比较了这些钙钛矿铁电半导体在光电催化领域面临的挑战,并展望了其应用前景.     

溶胶凝胶法制备透明IZO薄膜晶体管

采用溶胶凝胶法制备了非晶铟锌氧化物(a-IZO)薄膜,并作为薄膜晶体管(TFT)的有源层制备了a-IZO TFT。研究了IZO薄膜中铟锌比对薄膜性质及a-IZO TFT器件性能的影响。结果表明:溶胶凝胶法制备的IZO薄膜经低温(300℃)退火后为非晶结构,薄膜表面均匀平整、致密,颗粒大小为20 nm左右,并具有高透过率(>85%)。IZO薄膜中的铟锌比对薄膜的电学性能和TFT器件特性影响显著,增加In含量有利于提高薄膜和器件的迁移率。当铟锌比为3∶2时,所获得的薄膜适合于作为薄膜晶体管的有源层,制备的IZO-TFT经过相对低温(300℃)退火处理具有较好的器件性能,阈值电压为1.3 V,载流子饱和迁移率为0.24 cm2·V-1·s-1,开关比(Ion∶Ioff)为105。     

溶胶-凝胶法制备氧化锡基薄膜及薄膜晶体管的研究进展

透明导电氧化物(transparent conductive oxides, TCOs)薄膜和透明氧化物半导体(transparent oxide semiconductors, TOSs)薄膜具有高透明度和良好的导电率等特点,广泛应用于太阳能电池、平板显示、智能窗以及透明柔性电子器件等领域.大多数TCOs和TSOs薄膜主要是以氧化铟、氧化锌和氧化锡三种材料为基础衍生来的,其中,氧化铟薄膜中In元素有毒、含量稀少且价格昂贵,会造成环境污染;氧化锌薄膜对酸或碱刻蚀液敏感,薄膜图形化困难;氧化锡薄膜不仅无毒、无污染、价格低廉,还具有良好的电学性能和化学稳定性,具有巨大的发展潜力.目前,薄膜的制备主要依赖于真空镀膜技术.此类技术的缺点在于设备结构复杂且价格昂贵、能耗高、工艺复杂、生产成本高等.相比传统真空镀膜技术,溶胶-凝胶法具有工艺简单、成本低等优点,受到了人们的广泛关注.本文从TCOs和TSOs薄膜的发展现状和发展趋势出发,先介绍了氧化锡薄膜的结构特性、导电机制、元素掺杂理论以及载流子散射机理,然后介绍了溶胶-凝胶法原理和制备方法,接着介绍了近些年来溶胶-凝胶法制备氧化锡基薄膜在n型透明...     

有机红外半导体酞菁铒的掺杂及电学性质研究

对固相合成法制备的有机红外半导体ErPc₂进行了碘掺杂,有效地将ErPc₂的电阻率降低了约3个数量级.研究了本征和碘掺杂有机红外半导体ErPc₂电阻的温度依赖关系,碘的掺杂除显著地降低了ErPc₂材料的电阻外,其电阻的温度特性没有本质的变化,本征和碘掺杂ErPc₂都表现出指数型的电阻温度依赖关系.碘掺杂有效地降低了载流子的热激活能,使更多的载流子得以参与导电,掺杂后指前因子的减小也为降低材料的电阻 关键词： 有机红外半导体 酞菁铒 掺杂 电学性质     

二次耦合直流输出的金属氧化物TFT行驱动电路

为了弥补现有氧化物TFT的行驱动电路输出模块在功率消耗、响应速度、输出摆幅等方面的不足,提出了基于二次耦合的直流输出模块,并由此研究设计新的行驱动电路拓扑。仿真结果表明,该输出模块具有驱动能力强、响应速度快等优点。最后,基于刻蚀阻挡层(ESL)结构的氧化物TFT工艺,在玻璃衬底上成功制备了该行驱动电路,实测单级功耗为325μW。     

金属氧化物TFT阈值对LCD显示屏可靠性的影响

TFT的器件特性是影响氧化物TFT驱动的LCD显示屏良率的关键因素。本文研究了氧化物TFT的关键特性参数(阈值,稳定性)对窄边框LCD显示屏的良率和可靠性的影响。氧化物TFT阈值过负,将会导致TFT无法正常关断,而使显示屏的外围移位寄存器(VSR)电路失效。另外,在显示区域用于像素驱动的氧化物TFT的高温和背光照射下阈值持续负向漂移,最终会导致显示区域的驱动TFT漏电流过大,从而使显示屏出现串扰和残影不良。     

点缺陷调控:宽禁带Ⅱ族氧化物半导体的机遇与挑战

宽禁带Ⅱ族氧化物半导体材料体系,包括氧化铍(BeO)、氧化镁(MgO)、氧化锌(ZnO)及合金,拥有较大的激子结合能(ZnO 60 meV, MgO 80 meV),较高的光学增益(ZnO 300 cm~(-1))以及较宽的可调带隙(ZnO3.37 eV, MgO 7.8 eV, BeO 10.6 eV),具有实现紫外及深紫外波段低阈值激光器的独特优势,同时也是取代传统气体放电灯(汞灯、氘灯、准分子灯、氙灯)成为深紫外乃至真空紫外光源的重要候选材料之一.虽然经过20余年的研究历程, ZnO基pn同质结近紫外电致发光方向取得了长足进步,但是,随着带隙的展宽,伴随而来的受主(施主)离化能变高(百毫电子伏特量级),使得室温等效热能(26 meV)无法实现对杂质能级上的空穴(电子)有效离化;此外,掺杂过程中存在的自补偿效应也进一步弱化了载流子的产率,以上因素已经成为了阻碍宽禁带Ⅱ族氧化物半导体实现紫外激光器件及向更短波长扩展的瓶颈性问题,同时也是其他宽禁带半导体材料共同面对的难题.对材料电学及发光性能的调控往往取决于对关键缺陷态的识别与控制,丰富的点缺陷及其组合类型,使宽禁带Ⅱ族氧化物半导体成为研究缺陷物理的重要平台.针对特定点缺陷的识别及表征将有望发现并进一步构建能级较浅的缺陷态,为电学性能调控提供基础.本文从高质量外延生长、杂质与点缺陷、p型掺杂及紫外电致发光三个方面阐述Ⅱ族氧化物半导体近期研究结果,通过对相关研究工作的概览,阐明该体系作为深紫外光源材料的独特优势的同时,指明未来针对电学性能调控的关键在于对点缺陷的调控.     

半导体氮化铟(InN)的电学性质

本文总结了近年来半导体InN薄膜材料(主要是六方纤锌矿结构的InN及异质结构)的电学性质研究进展,重点内容为InN的载流子浓度和迁移率,造成InN中高电子浓度现象的施主分析、载流子输运特性及表面、界面特性等。同时也涉及了部分立方闪锌矿结构InN的电学特性和InN在器件(主要是高电子迁移率晶体管器件)上的潜在应用。     

金属诱导单一方向横向晶化薄膜晶体管以及栅控型轻掺杂漏极结构的研究

提出了一种低温金属单向诱导横向晶化的多晶硅薄膜晶体管(LT-MIUC poly-Si TFT) 的技术 . 使用该技术可在大面积廉价玻璃衬底上制备出高迁移率、低漏电电流、具有较好均匀性的 多晶硅器件. 在进一步的研究中，设计了一种新型的栅控轻掺杂漏区(GM-LDD)结构，有效地 解决了在较高源漏电压下的栅诱导漏电问题. 使得LT-MIUC poly-Si TFT 更适用于高质量的 有源矩阵显示器. 关键词： 金属单向诱导横向晶化 多晶硅薄膜晶体管 新型栅控轻掺杂漏区结构     

Amorphous silicon diodes and TFTs for active matrix flat panel display applications

The use of a-Si devices (diodes and transistors) in active matrix flat-panel displays is reviewed. The fabrication of the elements and their characteristics with steady and pulsed applied potentials are discussed. Two experimental arrays of 32×32 BBDs and 256×320 TFTs are shown.Part of this work is supported by CEE under Esprit program No. 833     

Nanoelectronic Devices Based on Carbon Nanotubes

We review the state-of-the-art in the carbon nanotube (CNT) electronics. The emphasis is made on actually created devices. The history of discovery of fullerenes is outlined and their properties are considered. Experimental discovery of nanotubes and nanotube synthesis technologies are reviewed. The CNT conductivity dependence on the geometrical structure of nanotubes is discussed. Various nanoelectronic CNT devices, such as nanowires, heterojunctions, diodes, and field-effect transistors are presented. Quantum properties of CNTs at low temperatures are discussed. CNT-based mechanical devices, memory elements, and switches are considered. Field emission properties of CNTs are analyzed. The data on the developed CNT-based light-emitting elements and the manufactured pre-production models of CNT flat-panel displays are given.     

Review of flexible and transparent thin-film transistors based on zinc oxide and related materials

Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFIDs),etc.Zinc oxide(ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors(TFTs) based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component(substrate,electrodes,channel and dielectrics) is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.     

Regulation of precursor solution concentration for In-Zn oxide thin film transistors

The tunable electronic performance of the solution-processed semiconductor metal oxide is of great significance for the printing electronics. In current work, transparent thin-film transistors (TFTs) with indium-zinc oxide (IZO) were fabricated as active layer by a simple eco-friendly aqueous route. The aqueous precursor solution is composed of water without any other organic additives and the IZO films are amorphous revealed by the X-ray diffraction (XRD). With systematic studies of atomic force microscopy (AFM), X-ray photoemission spectroscopy (XPS) and the semiconductor property characterizations, it was revealed that the electrical performance of the IZO TFTs is dependent on the concentration of precursor solution. As well, the optimum preparation process was obtained. The concentrations induced the regulation of the electronic performance was clearly demonstrated with a proposed mechanism. The results are expected to be beneficial for development of solution-processed metal oxide TFTs.     

Metal grid technologies for flexible transparent conductors in large-area optoelectronics

Mechanically flexible optoelectronic devices such as flexible displays, touch-screens, wearable electronics and solar cells are attracting significant commercial interest. In these devices, a transparent conductor is an essential element that delivers or collects the electrical current to the active material while it allows light to enter or exit from the device. The transparent conductor is composed of a transparent conductive film and a metallic grid providing electrical conduction over the large area. In this article, we review the established processes used by the industry as well as emerging solution-based methods for processing metal grids. Furthermore, we review the issues and potentials of these emerging processes facing for large-area deployment. In the final section, we evaluate three applications of flexible transparent conductors in: perovskite-based solar cells, organic light emitting diodes and electrochromic windows.     

新型蓝光OLED材料和器件

基于有机材料的电致发光技术可以应用于超薄平面显示和有机固体激光器等方面,在近20年来取得了飞速的发展,基本实现了红、绿、蓝三基色发光.绿色材料发展最快,基本达到了商业化实用阶段,而红色和蓝色材料的问题较多,特别是稳定、高效率的蓝光更具有挑战性.综述了近期我们对蓝光材料的分子设计与合成,以及蓝光器件的一些研究.主要包括金属络合物2,3-二甲基-8-羟基喹啉锂和聚芴衍生物树枝状的聚芴化合物的蓝光材料,以及利用基激复合态实现蓝光的电致发光器件.通过光致发光、电致发光光谱以及电压-电流-发光亮度特征曲线等研究了这些发光材料和器件的性质.现在蓝光器件的色纯度和工作寿命还有待提高.     

Surfaces and interfaces in polymer-based electronics

Research on electronics applications such as light-emitting devices for flat-panel displays, transistors, sensors and even solid state lasers based on conducting polymers is presently under way and in some cases has reached the stage of prototype production. The mechanisms for charge injection and conduction in these materials are being studied, as are the physics of luminescence and its quenching. Lately, research into controlling film morphology through self-organizing techniques also has gained interest. Though the present interest in conducting polymers mainly concerns the pristine semiconducting state, doped conducting polymers are also studied for potential use in many applications.

In this paper, we present an overview of some of the central issues in surface and interface science in the field, as well as provide our view on what may lie ahead in the future. Specifically, the importance of metal/polymer, polymer/metal and polymer/polymer interfaces is addressed. We illustrate these using polymer-based light-emitting devices, though the same type of issues appear in other polymer-based applications such as transistors and solar cells.     

Effect of spontaneous and piezoelectric polarization on optical characteristics of ultraviolet AlGaInN light-emitting diodes

Polarization is a crucial issue for electrical and optical characteristics of the UV AlGaInN light-emitting diodes. The effect of spontaneous and piezoelectric polarization on optical characteristics of the UV AlGaInN light-emitting diodes is investigated numerically. The simulation results indicate that the polarization-related effect for the UV AlGaInN light-emitting diodes is dominated by the piezoelectric polarization. When the UV AlGaInN light-emitting diodes are without piezoelectric polarization, the optical performance is enhanced effectively due to improved overlap of electron and hole wavefunctions, reduced electron leakage current, and increased density of holes in the active region.