Mn的价态对La0.8Ba0.2MnO3电磁性能的影响

在2—390K温度之间研究了La_0.8Ba_0.2MnO₃的 磁矩、磁电阻与温度的关系.发 现以不同价态的Mn元素引入得到的La_0.8Ba_0．2MnO₃ ，性能虽然都存在金属 —绝缘体转变，以及在磁场作用下居里温度附近电阻率变化非常显著的特点，但是价态对磁 性转变温度T_C，金属—绝缘体转变温度T_mi，以及磁电阻极大 值温度T_MR的影 响都非常显著.三种价态相比较，使用二价Mn的电阻率最低以及磁性转变温度更接近室温.认 为影响材料性能的主要因素是材料制备时引进的Mn元素的价态，由于原料价态的不同而形成 的氧空位浓度变化，进而影响了Mn⁴⁺/Mn³⁺的比. 关键词： 价态 磁电阻 居里温度 金属—绝缘体转变     

Co掺杂对铁磁金属La0.8Sr0.2MnO3磁电阻影响机理

通过对La_0.8Sr_0.2Mn_1-yCo_yO₃(y≤02)饱和磁矩和输运的测量,研究了Co对La_0.8Sr_0.2MnO₃的磁电阻影响机制.结果表明,在La_0.8Sr_0.2Mn_1-yCo_yO₃（y≤02）中Co³⁺离子是低自旋态.由于Mn³⁺—O—Co³⁺—O—Mn³⁺类型的磁交换与Mn³⁺-Mn⁴⁺离子间双交换作用相比较弱,Curie温度T_C附近的磁电阻随着Co掺杂量的增加而降低.与此相反,由于Co²⁺离子与e_g巡游电子的反铁磁交换耦合作用,低温区间的磁电阻随着Co掺杂量的增加而升高.     

Co掺杂对铁磁金属La0.8Sr0.2MnO3磁电阻影响机理

通过对La_0.8Sr_0.2Mn_1-yCo_yO₃(y≤02)饱和磁矩和输运的测量,研究了Co对La_0.8Sr_0.2MnO₃的磁电阻影响机制.结果表明,在La_0.8Sr_0.2Mn_1-yCo_yO₃（y≤02）中Co³⁺离子是低自旋态.由于Mn³⁺—O—Co³⁺—O—Mn³⁺类型的磁交换与Mn³⁺-Mn⁴⁺离子间双交换作用相比较弱,Curie温度T_C附近的磁电阻随着Co掺杂量的增加而降低.与此相反,由于Co²⁺离子与e_g巡游电子的反铁磁交换耦合作用,低温区间的磁电阻随着Co掺杂量的增加而升高. 关键词： 低自旋 磁电阻 磁交换作用     

La2/3Ca1/3MnO3/Eu2CuO4/La2/3Ca1/3MnO3磁性隧道结的制备与表征

采用磁控溅射，紫外线光刻和离子束刻蚀制备了La_2/3Ca_1/3MnO₃/Eu₂CuO₄/La_2/3Ca_1/3MnO₃磁性隧道结.通过对获得的磁性隧道结的I-V特性测量，发现非线性的I-V特性，显示结样品的隧穿特性.有趣的是发现在电极材料La_2/3Ca_1/3MnO₃的金属-绝缘体转变温度(Tp)以下，I-V曲线出现一个跳变.随着温度降低，开始出现跳变的临界电流增大，但是跳变都发生在同样的电压下～209mV.当电流增大或减小在跳变点附近出现回滞.这一跳变只发生在铁磁金属态，表明这是一个磁性相关联的效应，可能对应一种新的磁性开关过程.虽然，目前对这一现象背后的物理机理还不清楚，但是，这一现象有可能在未来自旋电子学器件方面具有潜在的应用价值. 关键词： 庞磁电阻 磁性隧道结 开关效应     

La0.67Ba0.33MnO3薄膜的激光辐照效应研究

利用脉冲激光沉积技术在LaAlO₃（00l）单晶衬底上制备了La_067Ba_033MnO₃薄膜,研究了CO₂激光辐照对La_067Ba_033MnO₃薄膜的微结构和磁电性能的影响.结果表明,经激光辐照后,La_067Ba_033MnO₃薄膜的结晶性增强,薄膜应变减小;薄膜表面形貌由“岛状”结构变为“平原"结构,且粗糙度大大降低;同时,薄膜的饱和磁化强度、铁磁居里温度、金属—绝缘态转变温度和磁电阻增大,而矫顽场和电阻率减小.根据对传统退火效应的分析和理论计算,认为激光辐照导致的表面微结构的变化以及薄膜的氧含量和均匀性的提高对La_067Ba_033MnO₃薄膜的磁电性能的改善与优化密切相关. 关键词： 庞磁电阻 激光辐照 脉冲激光溅射沉积     

Bi0.8Ba0.2FeO3/La0.7Sr0.3MnO3异质结制备及其交换偏置效应研究

采用脉冲激光沉积方法, 通过调节激光能量、激光频率、衬底温度、氧压、靶基距等工艺参数, 在(100)取向的铝酸镧单晶衬底上制备出Bi_0.8Ba_0.2FeO₃/La_0.7Sr_0.3MnO₃多铁性异质结. X射线衍射图谱表明薄膜呈钙钛矿结构, 高分辨透射电镜图谱和能量色散X射线图谱表明两相界面清晰且具有良好的匹配度, 异质结呈(00l)取向性生长. 加场冷却条件下不同温度的磁滞回线(M-H)测量结果表明样品具有明显的交换偏置效应, 交换偏置场(H_EB)随温度的线性变化可能与异质结界面处电子轨道的重构和界面处自旋、轨道自由度之间的复杂的相互作用有关.     

Nd0.7Sr0.3MnO3中显微结构相关电致电阻效应

用固相反应和高能球磨合成后续热处理两种方法分别得到钙钛矿结构Nd_0.7Sr_0.3MnO₃氧化物.两种不同方法得到的多晶样品,虽然晶体结构相同,化学成分和晶粒大小相近,但它们电输运性质却表现出很大差异.用固相反应法制得的样品的电阻几乎不随负载电流的变化而变化,即不表现电致电阻行为;而通过高能球磨合成后续热处理方法得到的样品电阻随外加电流增大而急剧减小,出现显著电致电阻效应.产生这种截然不同电输运特性的原因可能与样品的显微结构和界面性质有关. 关键词： 电致电阻效应 显微结构 钙钛矿结构锰氧化物 界面电阻     

Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt异质结电致电阻效应的改善

采用脉冲激光沉积技术制备了Ti/Pr_0.7Ca_0.3MnO₃/Pt和Ti/Pr_0.7Ca_0.3MnO₃/La_0.67Sr_0.33MnO₃/Pt异质结并研究了La_0.67Sr_0.33MnO₃功能插层对异质结电致电阻特性的影响. 实验结果表明La_0.67Sr_0.33MnO₃功能层的引入有效提高了器件的电阻转变特性,尤其是电阻转变率和疲劳性得到了极大的改善. 对La_0.67Sr_0.33MnO₃插层改善电致电阻转变特性的机理进行了定性的分析. 关键词： 电致电阻效应 电阻转变比率 疲劳特性     

Co含量对Bi6Fe2-xCoxTi3O18样品多铁性的影响

用固相工艺制备了Bi₆Fe_2-xCo_xTi₃O₁₈ (BFCT-x, x=0, 0.2, 0.6, 0.8, 1.0, 1.2, 1.6, 1.8, 和2.0)多铁陶瓷样品, 样品X射线谱分析发现, 随着Co含量的增加, 样品晶格常数出现了先增大后减小的变化. 室温下, BFCT-0.6样品呈现出相对较高的饱和磁化强度, 2M_s约为4.49 emu/g, BFCT-1.0具有最高的剩余磁化强度, 2M_r约为0.89 emu/g. Co含量在0.2 ≤x≤qslant 1.2范围内, 随着Co含量的增加样品顺磁–铁磁相变温度从752 K降至372 K. 小量的Co改善了样品的铁电性能, 当x=0.6时样品样品的铁电性能最佳, 随着含量增大样品铁电性能下降, 但当x >1.2时样品的铁电性能又得到了改善.     

La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应

用固相反应法制备了La_0.67Sr_0.08Na_0.25MnO₃样品.通过磁化强度-温度(M-T)曲线、电阻率-温度(ρ-T)曲线以及ρ-T拟合曲线研究了样品的输运性质及庞磁电阻(colossal magnetoresistance，CMR)效应.结果表明，ρ-T曲线和磁电阻-温度(MR-T)曲线均出现双峰现象；高温峰是伴随顺磁-铁磁(PM-FM)相变出现绝缘体-金属(I-M)相变，低温峰是颗粒界面效应；两个绝缘相输运机理不同：较低温度下(248K<T<274K)，ρ(T)符合极化子的可变程跃迁模型，而在更高温区(330K<T<374K)，ρ(T)符合极化子近邻跃迁模型；两个类金属相输运机理也不同：在低温区(67K<T<186K)，满足ρ-T^2.5关系，输运机理是自旋波散射和电-磁子散射作用，而在高温区(292K<T<304K)，满足ρ-T²关系，输运机理是单磁子散射作用. 关键词： 庞磁电阻 金属-绝缘体转变 晶界效应 输运行为     

Spin-polarized tunneling in nanostructured La2/3Sr1/3MnO3

We present magnetic and transport properties of nanocrystalline La_2/3Sr_1/3MnO₃ powders prepared by a gel-combustion method using citric acid as the fuel. The coercive magnetic field H_c is significantly different to the field H_c^* for which the magnetoresistance (MR) is maximum. The MR at low fields (LFMR) exhibits a power-law dependence with magnetization, MR∝Mⁿ, with n=2.5–3.3 for temperatures ranging from 5 to 200 K. The results are discussed in terms of a distribution of particle size in our sample.     

Transport properties and magnetoresistance in La0.8Te0.2MnO3/ZrO2 composites

The transport properties and magnetoresistance of electron-doped manganate / insulator composites (La_0.8Te_0.2MnO₃)_{1 - x}/(ZrO₂)_x (x=0, 0.3, and 0.5) are investigated. It is found that the metal-insulator transition temperature of this system shifts to a lower value as the ZrO₂ content increases. The introduction of ZrO₂ enhances both the domain scattering and electron relative scattering in the metal transport region. In the adiabatic small polaron hopping transport region, the thermal activation energy seems invariable regardless of the ZrO₂ content. The application of a magnetic field promotes the charge transportation capabilities of the composites, and the magnetoresistance is enhanced with an increase of the ZrO₂ content. This could be attributed to the more remarkable modification effect of magnetic field on ordering degree in the composites than in pure La_0.8Te_0.2MnO₃.     

Electrical and magnetic behavior of La0.7Ca0.3MnO3/La0.7Sr0.2Ca0.1MnO3 composites

The electrical transport properties and the magnetoresistance of La_0.7Ca_0.3MnO₃/La_0.7Sr_0.2Ca_0.1MnO₃ composites are investigated as a function of sintering temperature. On the basis of an analysis by X-ray powder diffraction and scanning electron microscopy we suggest that raising the sintering temperature enhanced the interfacial reaction and creates interfacial phases at the boundaries of the La_0.7Ca_0.3MnO₃ and La_0.7Sr_0.2Ca_0.1MnO₃. Results also show that in 3 kOe, and at the Curie temperature, the magnetoresistance value of 14% was observed for the composite sintered at 1300 °C. Based on the phenomenological equation for conductivity under a percolation approach, which depends on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the experimental resistivity—temperature data from 50-300 K and find that the activation barrier decreases as temperature is increased.     

Microstructures and multiferroic properties of textured Bi0.8La0.2FeO3 thin films

La-substituted BiFeO₃, Bi_0.8La_0.2FeO₃, thin films were fabricated on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. X-ray diffraction and high-resolution transmission electron microscope were used to analyze the structures of the films. The results show the films fabricated under optimized growth condition are (0 1 2) textured. X-ray photoemission spectroscopy results indicate that the oxidation state of Fe ion is Fe³⁺ in the films without detectable Fe²⁺. The films show low leakage current and excellent dielectric characters. Multiferroic properties with a remnant ferroelectric polarization of 5.2 μC/cm² and a remanent magnetization of 0.02 μ_B/Fe were established. These results have some implications for further research.     

Effect of magnetic film thickness on rectifying properties of La0.8Sr0.2MnO3/TiO2 heterostructures

The La_0.8Sr_0.2MnO₃ (LSMO)/ TiO₂ heterostructures with different thicknesses of the LSMO films were successfully synthesized using the RF magnetron sputtering technique. Excellent rectifying characteristics are presented in all heterostructures in a wide temperature range. The differences of the diffusive potentials for three heterojunctions are very little at 300 K. The samples exhibit a high resistance that plays an important role on their rectifying properties. The diffusive potential decreases with increasing temperature. The result is attributed to both the reduction of the thickness of the deletion layer due to the thermal diffusion and the modulation of the interfacial electronic structure of the heterostructures. The metal-insulator (M-I) transition is observed clearly from the single LSMO layers and the LSMO/ TiO₂ p-n heterojunctions.     

Enhanced ferroelectricity and ferromagnetism in Bi0.9Ba0.1FeO3/La2/3Sr1/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.1FeO3(BBFO)/La2/3Sr1/3MnO3(LSMO) heterostructures are fabricated on LaAlO3(100) substrates by pulsed laser deposition. Giant remnant polarization value(～ 85 μC/cm2) and large saturated magnetization value(～ 12.4 emu/cm3) for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectric properties in the BBFO/LSMO heterostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.