Er3+/Yb3+共掺Gd3Sc2Ga3O12晶体的上转换发光

研究了提拉法生长的Er³⁺/Yb³⁺:Gd₃Sc₂Ga₃O₁₂和Er³⁺:Gd₃Sc₂Ga₃O₁₂晶体在室温下320—1700nm范围的吸收光谱和500—750nm范围内的上转换荧光谱,同时对其上转换荧光的可能发生机制、途径以及上转换过程可能对Er^{3+相似文献}   

Ca3Sc2Si3O12:Ce3+的第一性原理研究

对Ca₃Sc₂Si₃O₁₂:Ce³⁺共掺杂N^3-、Sc³⁺、Mn²⁺、Mg²⁺和Na⁺进行第一性原理计算,研究不同的电荷补偿对发光中心Ce³⁺的影响．首先利用密度泛函理论构建超晶胞模型对Ce³⁺周围的局部结构进行了优化,然后通过CASSCF/CASPT2 RASSI-SO计算得到Ce³⁺的4f→5d跃迁能量．计算数据与实验光谱相吻合．实验光谱中的一个未知峰值理论分析确认是Sc³⁺替代Si⁴⁺导致的．     

LBO晶体上1 064，532 nm倍频增透膜的镀制及性能分析

 用电子束蒸发沉积方法在X切LBO（X-LBO）晶体上镀制了两种不同膜系结构的1 064和532 nm倍频增透膜，其中一种膜系结构为基底/ZrO₂/Y₂O₃/Al₂O₃/SiO₂/空气，另一种为基底/0.5Al₂O₃/ZrO₂/Y₂O₃/Al₂O₃/SiO₂/空气，两种膜系结构的主要差别在于有无氧化铝过渡层。测量了薄膜的反射率光谱曲线，发现两种增透膜在1 064和532 nm处的反射率均小于0.5％，实际镀制结果与理论设计曲线的差异主要是由材料折射率的变化引起的。且对样品在空气环境中进行了温度为473 K的退火处理，结果发现两种膜系结构均表现了较优异的光学性能，氧化铝过渡层的加入使薄膜具有强的热应力性能。     

Al2O3薄膜/纳米Ag颗粒复合结构的光吸收谱及增强Raman散射光谱研究

Al₂O₃介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al₂O₃介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al₂O₃介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al₂O₃介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al₂O₃介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高.     

紫外波段SiO2/Si3N4介质膜分布式布拉格反射镜的制备与研究

采用光学传递矩阵方法设计了紫外波段SiO₂/Si₃N₄介质膜分布式布拉格反射镜, 并利用等离子体增强化学气相沉积技术在蓝宝石(0001)衬底上制备了SiO₂/Si₃N₄介质膜分布式布拉格反射镜. 光反射测试表明, 样品反射谱的峰值波长仅与理论模拟谱线相差10 nm, 并随着反射镜周期数的增加而蓝移. 由于SiO₂与Si₃N₄具有相对较大的折射率比, 因而制备的周期数为13的样品反射谱的峰值反射率就已大于99%. 样品反射谱的中心波长为333 nm, 谱峰的半高宽为58 nm. 样品截面的扫描电子显微镜和表面的原子力显微镜测量结果表明, 样品反射谱的中心波长蓝移是由子层的层厚和界面粗糙度的变化引起的. X射线反射谱表明,子层界面过渡层对于反射率的影响较小, 并且SiO₂膜的质量比Si₃N₄差, 也是造成反射率低于理论值的原因之一.     

2-2型磁电复合薄膜CoFe2O4/Pb(Zr0.53Ti0.47)O3静磁耦合

运用溶胶-凝胶法在Pt/Ti/SiO₂/Si基片上旋涂制备了2-2型CoFe₂O₄/Pb(Zr_0.53Ti_0.47)O₃磁电复合薄膜．制备的磁电薄膜结构为基片/PZT/CFO/PZT*/CFO/PZT,通过改变中间层PZT*溶胶的浓度,改变磁性层间距以及静磁耦合的大小．SEM结果表明,复合薄膜结构致密,呈现出界面清晰平整的多层结构．制备的复合薄膜具有较好的铁电与铁磁性能．实验还研究了静磁耦合对薄膜磁电性能的影响,结果表明,随着复合薄膜磁性层间距的减小,静磁耦合效应的增加,磁电电压系数有逐渐增大的趋势.     

掺Bi的GeO2-Al2O3-Na2O玻璃的热学和光学性质

 用高温熔融法制备了96GeO-(3-χ)Al₂O₃-χNa₂O-1NaBiO₃ （将χ分别为0，0.5，1.5的玻璃命名为A1，A2，A3）和 96GeO-(3.5-ψ)Al₂O₃-ψχNa₂O-0.5Bi₂O₃（将ψ分别为0，0.5，2的玻璃命名为B1，B2，B3）玻璃。观察到样品在1 220 nm处（800 nm 激光二极管激发）的超宽带发光特性（半高宽约250 nm）。结果表明，以NaBiO₃形式引入Bi⁵⁺到玻璃原料中比以Bi₂O₃形式引入Bi³⁺到原料中得到的玻璃在1 220 nm处的发光强度大4.6倍，且荧光寿命和荧光半高宽也分别从280 μs和195 nm增加到了434 μs和275 nm。从A3，A2和A1的吸收边带的红移可初步推断出A3，A2及A1玻璃中Bi5+的含量逐步增加。总结吸收光谱与发射光谱的变化规律，认为Bi离子近红外高发射强度和宽荧光半高宽是由Bi⁵⁺的发光引起的。在两组玻璃中，热稳定性以及荧光发射截面积与荧光寿命的乘积值和荧光发射截面积与荧光半高宽的乘积值随着Na₂O含量的增加而增加。     

小尺寸VmOn+团簇的激光光解和密度泛函计算

通过激光溅射法产生了V₂O_n⁺ (n=1, 2), V₃O_n⁺ (n=1, 2, 3)和V₄O₃⁺等缺氧的钒氧团簇,并采用532和266 nm波长的激光对它们进行了光解研究. 利用密度泛函理论计算与激光光解实验相结合确定了这些团簇的几何结构和可能的光解通道. 激光光解实验表明V相似文献   

Er3+/Ce3+共掺碲铋酸盐玻璃的制备及光谱特性提高研究

采用高温熔融退火法制备了系列 80TeO₂-10Bi₂O₃-10TiO₂-0.5Er₂O₃-xCe₂O₃ (x=0,0.25, 0.5,0.75,1.0 mol%)和(80-y) TeO₂-10Bi₂O₃-10TiO₂-yWO₃-0.5Er₂O₃-0.75Ce₂O₃ (y=3,6,9,12 mol%)的碲铋酸盐玻璃.测试了玻璃样品400-1700 nm范围内的吸收光谱, 975 nm抽运下的上转换发光谱和1.53 μm波段荧光谱, 以及808 nm激励下的Er³⁺离子荧光寿命和无掺杂玻璃样品的Raman光谱, 并结合Judd-Ofelt理论和McCumber理论计算了Er³⁺离子光谱参数.结果表明, 在掺Er³⁺碲铋酸盐玻璃中引入Ce³⁺离子进行Er³⁺/Ce³⁺共掺, 通过Er³⁺离子⁴I_11/2能级与Ce³⁺离子²F_5/2 能级间基于声子辅助的能量传递过程,可以有效抑制Er³⁺离子上转换发光并明显增强其 1.53 μm波段荧光;同时,在现有Er³⁺/Ce³⁺共掺玻璃组分基础上引入WO₃, 可进一步提高1.53 μm波段荧光并展宽其荧光发射谱. 研究结果对于获取优异光谱特性的宽带掺Er³⁺光纤放大器玻璃基质具有实际意义.     

Sr和Ba替代对Eu掺杂Ca2.955Si2O7的结构和发光特性的影响研究

利用固相反应法制备了Sr和Ba替代的Ca_2.955-xM_xSi₂O₇: 0.045Eu²⁺ (M= Sr, Ba, x= 0.1-0.5)系列荧光粉, 利用较大离子半径的Sr和Ba元素替代Eu掺杂Ca_2.955-xM_xSi₂O₇ 中的Ca元素,研究Sr和Ba替代对样品结构和发光特性的影响. X射线衍射测试结果表明,少量Sr和Ba替代不会改变基质的晶体结构, 样品仍然为单斜晶系.未替代前, Ca_2.955Si₂O₇: 0.045Eu²⁺ 样品的发射峰在574 nm左右,随着Sr含量的增加,样品的发射峰发生蓝移; 而Ba含量在x= 0.1-0.4时不会引起发射峰位置的移动, 但x= 0.5样品的发射峰发生蓝移.同等含量的Sr和Ba部分替代样品中的Ca元素, Ba替代样品的光谱强度较强.     

紫外Sc_2O_3薄膜的光学和结构性能表征及其激光作用下的损伤机理

利用电子束蒸发方法,在不同沉积温度(50~350℃)下制备了Sc2O3薄膜。分别用分光光度计,小角掠入射X射线衍射仪和轮廓仪测试了薄膜样品的光谱、微结构和表面粗糙度信息,并用薄膜分析软件Essential Macleod计算了Sc2O3薄膜的折射率和消光系数。结果表明:随着沉积温度升高,Sc2O3薄膜结晶程度增强,晶粒尺寸增大,且较高的沉积温度有利于获得较高的折射率。最后用355 nm,8 ns的三倍频Nd:YAG激光器测试了其激光损伤阈值(LIDT),最大值为2.6 J/cm2,且阈值与薄膜的消光系数、表面粗糙度、光学损耗均呈现相反的变化趋势。用光学显微镜和扫描电子显微镜表征了该薄膜的破坏形貌,详细分析了薄膜在不同激光能量作用下破坏的发展过程,以及Sc2O3薄膜在355 nm紫外激光作用下LIDT与制备工艺的关系,重点分析了355 nm激光作用下薄膜的破坏机理。     

Laser-induced voltage effects in Ca3Co4O9 thin films on tilted LaAlO3（001） substrates grown by chemical solution deposition

Laser-induced voltage effects in c-axis oriented Ca3Co4O9 thin films have been studied with samples fabricated on 10 tilted LaAlO3(001) substrates by a simple chemical solution deposition method. An open-circuit voltage with a rise time of about 10 ns and full width at half maximum of about 28 ns is detected when the film surface is irradiated by a 308-nm laser pulse with a duration of 25 ns. Besides, open-circuit voltage signals are also observed when the film surface is irradiated separately by the laser pulses of 532 nm and 1064 nm. The results indicate that Ca3Co4O9 thin films have a great potential application in the wide range photodetctor from the ultraviolet to near infrared regions.     

Low-temperature laser processes for synthesizing (100)-textured Pb(Zr,Ti)O3 thin films on Si substrate

High-performance Pb(Zr,Ti)O₃, PZT, thin films were synthesized on Si substrates by using low-temperature laser-assisted processes, which combine pulsed laser deposition (PLD), laser lift-off (LLO) and laser-annealing (LA) processes. The PZT films were first grown on sapphire substrates at 400 °C, using Ba(Mg_1/3Ta_2/3)O₃, BMT, as seeding layer, by the PLD process, and were then transferred to Si substrates at room temperature by a LLO transferring process. Utilization of the BMT layer is of critical importance in those processes, since it acted as a nucleation layer for the synthesis of the PZT thin films on the sapphire substrates and, at the same time, served as a sacrificial layer during laser irradiation in the LLO process. After the LLO process, the surfaces of the PZT films were recovered by the LA process for removing the damage induced by the LLO process. A thin BMT (∼30 nm) layer is randomly oriented, resulting in non-textured PZT films with good ferroelectric properties, viz. P_r=20.6 μC/cm² and E_c=126 kV/cm, whereas a thick BMT (∼100 nm) layer is (100) preferentially oriented, leading to (100)-textured PZT films with markedly better ferroelectric properties, viz. P_r=34.4 μC/cm² and E_c=360 kV/cm. PACS 81.15.Fg; 77.84.-s     

Enhanced magneto-optical Kerr effects in nanocrystalline Sc-doped CoFe2O4 thin films

Nanocrystalline CoFe_2−xSc_xO₄ (x=0-0.4) thin films were prepared on silicon substrates at reduced temperature by a sol-gel process, and the doping effects of scandium on the microstructure, magnetism and polar magneto-optical Kerr effects of the as-deposited films were examined. It was shown that the intensities of both of the Kerr rotation peaks increase with the doping content x of Sc³⁺. The increase for the peak at 540 nm is due to the decrease of the electrostatic polarization of O²⁻ resulting from the relatively large radius of Sc³⁺, and that for the peak at 620 nm was a result of the migration of Co²⁺ from octahedral to tetrahedral sites in the presence of the dopant of Sc³⁺.     

Au:TiO2和Au:Al2O3纳米颗粒复合膜的线性和非线性光学特性

主要从实验和理论两个方面,探讨了不同Au颗粒尺寸和不同基质对Au：TiO₂和Au：Al₂O₃复合膜线性和非线性光学性质的影响.用吸收光谱研究了Au颗粒尺寸和基质与Au复合膜表面等离子体共振带之间的关系;用皮秒Z扫描技术研究了共振和非共振情况下(激发光波长分别为532nm和1064nm),Au颗粒尺寸和基质与复合膜三阶非线性极化率的关系.基于表面等离子体共振理论和局域场增强理论对复合膜进行了分析,得到了不同Au颗粒大小和不同基质时Au复合膜的 关键词： 金属纳米颗粒 复合膜 三阶非线性 表面等离子体共振     

Rare earth doped cobalt ferrite thin films deposited by PLD

CoFe₂O₄ thin films with preferential texture structure, small grain size, and perpendicular magnetic anisotropy can be obtained by the pulsed laser deposition (PLD) technique. In this work, we studied the influence of the Fe³⁺ ions substitution by three elements from lanthanide group (Dy, La, and Gd) on the structural properties of the thin films. The samples were deposited by Nd:YAG laser (λ=532 nm, 10 ns) ablation of CoFe_1.8RE_0.2O₄, (RE=Dy, La, Gd) targets at various substrate temperatures ranging from room temperature to 600 °C. The microstructure and chemical composition of the thin films were investigated by Raman spectroscopy, XRD, SEM-EDS, and ToF-SIMS. The XRD patterns and Raman spectra of the thin films indicated the formation of a single spinel structure. Thus, the desired substitution of the iron ions in the spinel lattice with the RE elements was achieved in the thin films, although in the bulk material, their presence determined the formation of a residual phase with a perovskite-type structure.     

Al<Subscript>2</Subscript>O<Subscript>3</Subscript> plasma production during pulsed laser deposition

A Nd:YAG laser operating in second harmonic (532 nm), 3 ns pulse duration, 150 mJ pulse energy, and 10 Hz repetition rate, is employed to irradiate Al₂O₃ target placed in high vacuum. The produced plasma is investigated by an ion collector used in time-of-flight configuration and by a mass quadrupole spectrometer, in order to determine the equivalent plasma temperature and the atomic and molecular composition. Pulsed laser deposition technique has been used to produce thin films on different substrates placed close to the target. Different surface analyses, such as energy dispersive X-ray fluorescence (EDXRF), X-ray photoelectron spectroscopy (XPS) and surface profilometry are employed to characterize the produced films. Measurements of ablation yield, plasma equivalent temperature, acceleration voltage and characterization of grown thin films are presented and discussed.     

Crystallization of lead zirconate titanate films by laser annealing

The structure of lead zirconate titanate Pb(Zr _x Ti_{1 ? x} )O₃ thin films grown by chemical solution deposition on Si-SiO₂-Ti-Pt substrates has been studied using transmission electron microscopy and energy-dispersive analysis. Films crystallization has been performed using laser annealing. It has been found that, in contrast to isothermal annealing where nucleation on the platinum layer dominates, crystallization and growth of spherical perovskite crystals occur in the film bulk. The perovskite phase crystal size increases from 10 to 120 nm with increasing laser beam energy.     

Photoluminescence behavior of pulsed laser deposited ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> thin-film phosphors grown on various substrates

ZnGa₂O₄ thin-film phosphors have been grown on Si(100), Al₂O₃(0001) and MgO(100) substrates using pulsed laser deposition. The structural characterization was carried out on a series of ZnGa₂O₄ films grown on various substrates under various substrate temperatures and oxygen pressures. The films grown on these substrates not only have different crystallinity and surface morphology, but also different Zn/Ga composition ratio. The crystallinity and photoluminescence (PL) of the ZnGa₂O₄ films are highly dependent on the deposition conditions, in particular the stoichiometry ratio of Zn/Ga and the kind of substrate. The variation of Zn/Ga in the films also depends on not only the oxygen pressure but also the substrate temperature during deposition. The PL properties of pulsed laser deposited ZnGa₂O₄ thin films have indicated that Al₂O₃(0001) and MgO(100) are promising substrates for the growth of high-quality ZnGa₂O₄ thin films and that the luminescence brightness depends on the substrate. The luminescence spectra show a broad band extending from 350 to 600 nm and peaking at 460 nm. Received: 11 July 2002 / Accepted: 31 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +82-51-6206356, E-mail: jhjeong@pknu.ac.kr     

Spectroscopic characterization of Yb:Sc2O3 transparent ceramics

Yb：Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm-1. There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth （11 nm） and an emission cross-section of 1.8×10^-20 cm^2. The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb：Sc2O3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb：Sc2O3 transparent ceramics are a promising material for short pulse lasers.