Atomic structure of Al55(Cr1−xMnx)15Si30 metallic glasses observed by neutron diffraction

An atomic structure of Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49,1) metallic glasses was studied by neutron diffraction. An advantage of the neutron diffraction technique was fully exploited by utilizing the negative scattering length of Mn to form a neutron zero scattering ‘alloy’ for the component Cr_0.51Mn_0.49 in this quaternary Al---(Cr, Mn)---Si alloy. This allows the atomic distribution of the resulting quasibinary Al---Si metallic glass to be derived directly. Moreover, the (Al, Si)---TM (TM = Mn, Cr) and TM---TM pair correlations were also extracted by taking appropriate linear combinations of the atomic structures for the Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49, 1) metallic glasses. A sharp first peak in the (Al,Si) ---TM pair correlations thus obtained led to the conclusion that a strong attractive interaction exists between (Al, Si) and TM atoms and, hence, that the presence of the TM atoms is responsible for the formation of an amorphous phase.     

Elastic constant anomaly in Fe80−xMoxB20 metallic glasses

The extensional sound velocities V_E of Fe_80−xMo_xB₂₀(x = 6, 7, 8) metallic glasses have been measured between 100 and 600 K in a saturating magnetic field. Young's modulus (E = _E², = density) shows anomalous temperature dependence at and below the magnetic transition temperature of each glass studied. These anomalies are interpreted as arising from the change of long-range spin coupling energy at the Curie temperature in a molecular field approximation. Comparison is made with similar effects in other crystalline and non-crystalline magnetic materials.     

Compositional dependence of the optical gap in Ge1−xSx, Ge40−xSbxS60 and (As2S3)x(Sb2S3)1−x non-crystalline systems

An attempt is made to calculate the compositional dependence of the optical gap (E_g) in Ge_1−xS_x, Ge_40−xSb_xS₆₀ and (As₂S₃)_x(Sb₂S₃)_1−x non-crystalline systems in an alloy-like approach. From the comparison of both the experimental dependence of E_g and the calculated ones using the Shimakawa relation [E_{g AB} = YE_{g A} + (1−Y)E_{g B}] it is assumed that this equation is useful for such systems or parts of the systems which behave like almost ideal solutions.     

X-ray scattering studies of the short and medium range ordering in AsxTe1−x glasses

The structures of As_xTe_1−x(x = 0.2, 0.4, and 0.5) glasses are studied using the differential X-ray anomalous scattering technique. The partial distribution functions have also been obtained for the stoichiometric As₂Te₃ glass, giving information on the medium range ordering. All the glasses show chemical disorder to differing extents, the As₂Te₃ glass being the most disordered. The Te coordination number undergoes a change at x=0.4 where it is 2.5 compared with 2 for AsTe. This change indicates the existence of about 50% of threefold Te sites in the stoichiometric glass, as well as in the Te-rich glasses. Some of the physical properties of the glasses may be explained based on these results.     

Peculiarities of liquid phase epitaxy in GaInPAs/InP lattice-matched heterostructures

The temperature phase stability of Ga_xIn_1−xP_yAs_1−y solid solution has been analyzed. A simple solution theory with the temperature-independent interaction parameters in solid and liquid phases has been used. The absence of miscibility gaps for all the compositions of the solid solution, lattice-matched to InP at a growth temperature of 640°C, has been demonstrated both theoretically and experimentally. The influence of the elastic deformations on the Ga_xIn_1−xP_yAs_1−y (λ_g = 1.4 μm) solid solution parameters has been observed assuming the model of the layer coherent conjugation in heterostructures.     

Non-linear As(P) incorporation in GaAs1−yPy on GaAs and InAs1−yPy on InP

We find anion incorporation into both GaAs_1−yP_y on GaAs and InAs_1−yP_y on InP during gas source molecular beam epitaxy (GSMBE) is not linearly related to the hydride gas fluxes within our reactor. The deviation from an ideal model, i.e., y = ƒ_P/(ƒ_P+ƒ_As), where As(P) is the flux of AsH₃ (PH₃), can be as large as a factor of two. GaAsP exhibits the largest degree of nonlinearity and incorporation is found to depend quadratically on the fluxes over a wide range of flux ratio. Significant deviations are also found for InAsP; however, anion incorporation can be modeled with y = ƒ_P/(ƒ_P+βƒ_As).     

Electronic traps in mixed Si1−xGexO2 films

Thermally stimulated luminescence (TSL) and infrared (IR) spectroscopy were measured in plasma grown Si_1−xGe_xO₂ (x=0, 0.08, 0.15, 0.25, 0.5) with different thicknesses (12–40 nm). A comparison with the TSL properties of thermally grown SiO₂ and GeO₂ was also performed. A main IR absorption structure was detected, due to the superposition of the peaks related to the asymmetric O stretching modes of (i) Si–O–Si (at ≈1060 cm⁻¹) and (ii) Si–O–Ge (at 1001 cm⁻¹). Another peak at ≈860 cm⁻¹ was observed only for Ge concentrations, x>0.15, corresponding to the asymmetric O stretching mode in Ge–O–Ge bonds. A TSL peak was observed at 70°C, and a smaller structure at around 200°C. The 70°C peak was more intense in all Ge rich layers than in plasma grown SiO₂. Based on the thickness dependence of the signal intensity we propose that at Ge concentrations 0.25x0.5 TSL active defects are localised at interfacial regions (oxide/semiconductor, Ge poor/Ge rich internal interface, oxide external surface/atmosphere). Based on similarities between TSL glow curves in plasma grown Si_1−xGe_xO₂, thermally grown GeO₂ and SiO₂ we propose that oxygen vacancy related defects are trapping states in Si_1−xGe_xO₂ and GeO₂.     

MBE growth of cubic AlyGa1−yN/GaN heterostructures—structural, vibrational and optical properties

Cubic Al_yGa_1−yN/GaN heterostructures on GaAs(0 0 1) substrates were grown by radio-frequency plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction, micro-Raman, spectroscopic ellipsometry, and cathodoluminescence measurements were used to characterize the structural, optical and vibrational properties of the Al_yGa_1−yN epilayers. The AlN mole fraction y of the alloy was varied between 0.07<y<0.20. X-ray diffraction reciprocal space maps demonstrate the good crystal quality of the cubic Al_yGa_1−yN films. The measured Raman shift of the phonon modes of the Al_yGa_1−yN alloy was in excellent agreement with theoretical calculations. Both SE and CL of the Al_yGa_1−yN epilayer showed a linear increase of the band gap with increasing Al-content.     

Cd1−xZnxTe: Growth and characterization of crystals for X-ray and gamma-ray detectors

The choice a suitable crystal growth method and a reasonable x value is of profound importance in the preparation of high quality Cd_1−xZn_xTe crystals for x-ray and gamma-ray detectors. The present paper reviews the evolution and development of Cd_1−xZn_xTe crystal growth for x-ray and gamma-ray detectors. At the same time, emphasis is put upon finding the relationship between the x value and the quality of the Cd_1−xZn_xTe. Three sets of Cd_1−xZn_xTe ingots with different x values, specifically 0.10, 0.15, and 0.20 were grown by the vertical Bridgman method (VBM) and characterized. Their x specification was then correlated with their dislocation densities, Te precipitates, inclusions, IR transmission, resistivities, and impurity concentrations, respectively. It was found that VBM Cd_0.85Zn_0.15Te as grown in this paper possessed the best choice of qualities with respect to defects and impurities.     

B NMR investigations in xV2O5–B2O3 and xV2O5–B2O3–PbO glasses

11B (I=3/2) MAS NMR in the binary glass system xV₂O₅–B₂O₃ (x=0.053, 0.43) and the ternary glass system xV₂O₅–B₂O₃–PbO (0.1x1.5) has been investigated at room temperature. In the xV₂O₅–B₂O₃ glasses, one NMR line due to BO₃ unit was observed. Meanwhile in the xV₂O₅–B₂O₃–PbO, two NMR lines which arise from BO₃ and BO₄ units were detected, where the appearance of BO₄ units is produced by the presence of PbO. From the computer-simulation of the ¹¹B NMR central transition line (m=−1/2↔1/2), the quadrupole parameters (e²qQ/h and η) for BO₃ units in xV₂O₅–B₂O₃, and those for BO₃ and BO₄ units in xV₂O₅–B₂O₃–PbO were obtained as a function of x. As the V₂O₅ content increases in xV₂O₅–B₂O₃–PbO, the e²qQ/h and η values of the BO₃⁻ associated resonance are found to slightly decrease and increase, respectively. Meanwhile, the e²qQ/h and η values of BO₄⁻ associated resonance in xV₂O₅–B₂O₃–PbO are found to slightly increase and decrease, respectively. By comparing the intensities of the total transitions (m=−3/2↔−1/2,m=−1/2↔1/2, and 1/2↔3/2) for the ¹¹B NMR line of BO₃ and BO₄ units contained in xV₂O₅–B₂O₃–PbO with those of respective standard samples of 0.053V₂O₅–B₂O₃ and NaBH₄, the quantitative fractions of BO₃ and BO₄ in xV₂O₅–B₂O₃–PbO were obtained as a function of x.     

Low-temperature growth of epitaxial layers of ZnSe1−xTex solid solutions

The layers of ZnSe_1−xTe_x (0 < x < 1.0) solid solutions have been grown by liquid-phase epitaxy in a closed tube at 620–680 °C. Zinc chloride served as a solvent. ZnTe and ZnSe crystals were used as sources and substrates with orienting surfaces (110) and (111) for ZnSe and (110) for ZnTe. The composition of the grown layer was specified by the relative content of the ZnSe and the ZnTe in the solution and was controlled by X-ray analysis. The position of the exciton bands in the photoluminescence spectra of ZnSe_1−xTe_x over the interval 0.3 < x < 1.0 is in agreement with the free exciton energies calculated for these compositions. Relatively low-ohmic (of about 10² Ω cm) epitaxial layers of ZnSe_1−xTe_x solid solutions were grown.     

Physical properties of amorphous Ge20Sb25−xBixSe55 thin films

The influence of substitution of Sb atoms by Bi atoms on the electrical and optical properties of thin films of the Ge₂₀Sb_25−xBi_xSe₅₅ [0x15] system are reported. Results of dc conductivity and thermoelectric power measurements between 150 and 450 K show that the Ge---Sb---Se system is chemically modified by addition of large concentrations of Bi atoms between X=5 and X=10 at.%). A transition from p-type for Sb-doped to n-type for Bi-doped films and a decrease of resistivity is observed. The absorption edge shifts to shorter wavelength, thereby decreasing the optical band gap of the system. Compositional dependences of electrical conductivity, thermoelectric power, and the appearance of n-type conduction are discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in high concentrations. The coexistence of band and hopping conduction is proposed. The ac conductivity in 0.1–10.0 kHz frequency and 150–450 K temperature range was found to obey a power law σ(ω, T) = Aω^s. The results were interpreted in terms of Elliott's theory, which assumes correlated barrier hopping (CBH) between the charged defect centres. It was found that computed results from the CBH model and experimental one are qualitative agreement for the present materials.     

XAS study of lanthanum coordination environments in glasses of the system K2O---SiO2---La2O3

The La L₁ and L₃ XANES and L₃ EXAFS have been investigated for the series of glasses 10K₂O---50SiO₂---x La₂O₃ (x = 1, 5, 10) and (10 − x)K₂O---40SiO₂−(x/3)La₂O₃ (x = 7.5, 5, 2.5) and model compounds La₂O₃, LaAlO₃, LaPO₄, La₂NiO₄, La₂CuO₄ and La(OH)₃. An edge resonance at 25 eV above the L₁ edge in the glass spectra is concentration-dependent, decreasing in intensity with increasing lanthanum concentration. The 2s → nd forbidden transition increases with La₂O₃ concentration, indicating a reduction in the ‘average’ site symmetry of the first coordination shell of La. Mapping _X(k) space, which is a new and promising technique, was employed to extract bond distance, coordination number and thermal parameters from the EXAFS. By this method, one calculates the complete _X(k) space a function of all physically reasonable values of the adjusted parameters in all possible combinations. The advantage in this method is the assurance of a global minimum. Bond lengths were comparable to those obtained by Fourier transforming the phase corrected EXAFS. The values are 2.42 Å (± 0.03 Å) for La---O. The coordination numbers (N ≤ 7 ± 1.5) were derived by mapping and comparison to the published structures for other La compounds. _X(k) mapping is compared with least-squares fitting the data, and the correlation between the Debye-Waller factor and coordination number is also discussed.     

XPS and electroluminescence studies on SrS1−xSex and ZnS1−xSex thin films deposited by atomic layer deposition technique

SrS_1−xSe_x and ZnS_1−xSe_x thin films were deposited by the atomic layer deposition (ALD) technique using elemental selenium as the Se source, thus avoiding use of H₂Se or organometallic selenium compounds. X-ray diffraction (XRD) analysis showed that the films were solid solutions and X-ray photoelectron spectroscopy (XPS) data showed that the surface of both ZnS_1−xSe_x and SrS_1−xSe_x were covered with an oxide and carbon-containing contaminants from exposure to air. The oxidation of SrS_1−xSe_x extended into the film and peak shifts from sulfate were found on the surface. Luminance measurements showed that emission intensity of the ZnS_1−xSe_x:Mn alternating current thin film electroluminescent (ACTFEL) devices at fixed voltage was almost the same as that of the ZnS:Mn device, while emission intensity of the SrS_1−xSe_x:Ce devices decreased markedly as compared to the SrS:Ce device. Emission colors of the devices were altered only slightly due to selenium addition.     

Design and optimisation of AlxGa1−xAs/AlyGa1−yAs multilayer structures for visible wavelength applications

Quantum wells with excitonic features in the visible wavelength range were designed using the Al_xGa_1−xAs/Al_yGa_1−yAs material system, and grown using low pressure metal organic vapour phase epitaxy. Characterisation of these quantum well samples was carried out by using photovoltaic spectroscopy, photoluminescence, differential reflectance or photoreflectance techniques. These measurements showed that excitonic absorption in the 520–630 nm range could be achieved using these AlGaAs quantum wells.     

The effect of mixed alkaline earths on the diffusivity and the incorporation of iron in 5Na2O · xMgO · (15−x)CaO · yAl2O3 · (80−y)SiO2 melts

Diffusion coefficients of iron were measured in glass melts with the basic compositions 5Na₂O · xMgO · (15−x)CaO · yAl₂O₃ · (80−y)SiO₂ with x=5, 10 and y=0, 5, 7.5, 10 and 15. The melts were doped with 0.25 mol% Fe₂O₃ and studied in the temperature range from 1000 to 1600 °C using square-wave voltammetry. The voltammograms exhibited distinct peaks attributed to the reduction of Fe³⁺ to Fe²⁺, from which peak currents mixed diffusion coefficients of iron were calculated. Diffusion coefficients in all melt compositions which did not show crystallization could be fitted to Arrhenius equation. The diffusivities measured in different melt compositions were related to the same viscosity, i.e. not the same temperature. Increasing the alumina concentration from 5 to 10 mol% resulted in an increase of the viscosity corrected diffusivities. At further increasing alumina concentrations, the diffusivities get smaller again. This can be explained by the stabilizing effect of Na⁺ and Ca²⁺ on FeO⁻₄ and AlO⁻₄-tetrahedra, which strengthens the incorporation of Fe³⁺ into the glass structure.     

Internal friction in vanadium-phosphate glasses doped with Na2O

The internal friction of _xNa₂O·(0.5−x)V₂O₅·O.5P₂O₅(x = 0.025–0.3) glasses was studied using the low-frequency torsion pendulum technique. The temperature spectrum of internal friction reveals three maxima. Maximum 1, the so-called “electron” maximum, is the same as observed in binary vanadium-phosphate glasses. The origin of maximum 2 can be attributed to ion migration. Maximum 3 appears for glasses containing more than 10 mol.% Na₂O and is probably connected with sodium-proton interactions.     

Compositional control of CdxZn1−xSe grown by photoassisted organometallic vapor phase epitaxy

The photoassisted OMVPE growth technique is important for the fabrication of blue/green laser diodes based on Cd_xZn_1−xSe quantum wells. Low temperature growth with photoassistance is key to the fabrication of these devices, however, the compositional control of Cd_xZn_1−xSe becomes increasingly difficult as the growth temperature is reduced. We have studied the compositional control of Cd_xZn_1−xSe using the sources DMCd, DMZn, and DMSe, with irradiation from a Hg arc lamp. We studied the dependence of the composition on the growth temperature, irradiation intensity, and source mass flows. The composition x increases with increasing temperature and decreases with increasing irradiation intensity. The solid-phase composition is a non-linear function of the gas-phase composition X. The slope of this characteristic, dx/dX, should be minimized for good compositional control. At 475°C without photoassistance, dx/dX is 1.75 near a composition of 20%, as determined from the data of Parbrook et al. Decreasing the temperature increases dx/dX. At 370°C with 12 mW/cm², dx/dX ≈ 13 and at 350°C with 58 mW/cm² dx/dX ≈ 60. We have investigated this behavior at 370°C with 12 mW/cm² irradiation by studying both the composition and the growth rate as a function of the gas-phase composition. The growth rate is non-monotonic, and is minimum for a gas-phase composition of 0.20. The behavior is quite complex, and is not fully understood at the present time. Nonetheless, our results indicate that the Cd-bearing precursor is adsorbed much more strongly than the Zn-bearing precursor. In addition to this, the introduction of the DMCd strongly inhibits the growth of ZnSe. We have achieved sufficiently good compositional control at 370°C and 12 mW/cm² to grow ZnSe/Cd_xZn_1−xSe/ZnSe multiple quantum well structures. More work is necessary in order to clarify the roles of irradiation intensity and VI/II ratio so that good compositional control can be achieved at lower growth temperatures.     

Characterisation of semiconducting V2O5–Bi2O3–TeO2 glasses through ultrasonic measurements

Tellurite containing vanadate (50−x)V₂O₅–xBi₂O₃–50TeO₂ glasses with different bismuth (x=0, 5, 10, 15, 20 and 25 wt%) contents have been prepared by rapid quenching method. Ultrasonic velocities (both longitudinal and shear) and attenuation (for longitudinal waves only) measurements have been made using a transducer operated at the fundamental frequency of 5 MHz in the temperature range from 150 to 480 K. The elastic moduli, Debye temperature, and Poisson’s ratio have been obtained both as a function of temperature and Bi₂O₃ content. The room temperature study on ultrasonic velocities, attenuation, elastic moduli, Poisson’s ratio, Debye temperature and glass transition temperature show the absence of any anomalies with addition of Bi₂O₃ content. The observed results confirm that the addition of Bi₂O₃ modifier changes the rigid formula character of TeO₂ to a matrix of regular TeO₃ and ionic behaviour bonds (NBOs). A monotonic decrease in velocities and elastic moduli, and an increase in attenuation and acoustic loss as a function of temperature in all the glass samples reveal the loose packing structure, which is attributed to the instability of TeO₄ trigonal bipyramid units in the network as temperature increases. It is also inferred that the glasses with low Bi₂O₃ content are more stable than with high Bi₂O₃ content.     

Electronic conduction in vitreous semiconductors in the pseudo-binary system (As2S3)1-x(PbS)x

AC conductivity and dielectric relaxation measurements of the bulk amorphous compositions in the pseudo-binary system (As₂S₃)_1-x(PbS)_x (x = 0, 0.1, 0.4 and 0.5) in the frequency range 500 Hz-10 kHz and in the temperature span 180–450 K are reported. The temperature dependence of the ac conductivity, σ_ac(ω), has a broad structure at all frequencies in compositions with x = 0.1, 0.4 and 0.5 whose peak position is not thermally activated. A similar structure was also observed in the data on the dielectric constant, ε₁, which peaked at a frequency of 1 kHz in the composition with x = 0.5. Analysis of the results using the correlated barrier hopping model revealed that the electronic conduction takes place by single polaron and bipolaron hopping processes at high and low temperatures, respectively, in compositions containing Pb. The microstructure and phase-separation in the glasses containing Pb influence the electrical transport and dielectric dispersion. This study has revealed the possible presence of a phase transformation at around 300 K at a frequency of 1 kHz in the dielectric dispersion behaviour of composition with x = 0.5.