半导体多晶薄膜的瞬态光电导

在低温下观察到半导体多晶薄膜的瞬态光电导现象．给出了三维理论模型．理论研究表明，陷阶引起光电导，光生载流子通过隧道效应实现复合，使光电导逐渐衰减．我们的实验结果与理论计算结果符合得相当好．     

GaN基薄膜材料和器件的最新进展

综述了ＧａＮ基薄膜材料研制与器件开发的新进展，着重阐明其技术突破与商品化应用前景。     

Fe_2O_3-SnO_2双层薄膜对氨气敏感特性及其机理研究

本文报道了以Ｆｅ（ＣＯ）５和ＳｎＣｌ４为源，采用ＰＥＣＶＤ技术淀积Ｆｅ２Ｏ３－ＳｎＯ２双层薄膜，将该薄膜淀积在陶瓷管上，对氨气的敏感特性进行了测量，并讨论了敏感机理．     

利用逐层生长技术制备硅薄膜的研究

本文介绍了在ＰＥＣＶＤ系统中利用逐层生长技术（ＬａｙｅｒｂｙＬａｖｅｒ）沉积硅薄膜，薄膜在衬底温度只有２５０℃的情况下已晶化．本文对于氢在薄膜沉积过程中的剪裁作用进行了分析，并对薄膜的结构和光电性质作了详细的研究．     

氧化锌薄膜热退火特性的研究

对退火前后氧化锌薄膜的结构特性、化学组分及化学价态，以及缺陷特性进行了详尽的研究，结果表明，低温热退火是改善氧化锌薄膜结构特性、化学组分及化学价态，并且减少缺陷的良好方法。     

MBE生长的InAs薄膜Hall器件

利用ＧａＡｓ衬底上的ＩｎＡｓ薄膜制备的Ｈａｌｌ器件,具有灵敏度高（在相同的电子浓度、室温附近灵敏度是ＧａＡｓＨａｌｌ器件的１．５倍）,不等位电压温漂小等优点．可用于电流传感器、无刷电机等磁敏传感器中,具有广阔的应用前景     

Preparation of Nanosize CdS／PANI Film and Its Photoelectric Properties

Nanosize CdS semiconductor particles were synthesized using the solvothermal technique. The structure was characterized by means of XRD,TEM and ED techniques. PANI film was prepared by electro—chemistry method onto the indium—tin oxide glass. The nanoparticles were doped on PANI film by the dipping process, and the self—assembled nanoparticles—PANI composite film was acquired. The photoelec tricproperties of the self—assembled film were studied by PL and Z—scan method.     

Electroluminescent Excitation Mechanism of Erbium－activated Zinc Sulfide Semiconductor Thin Film Devices

ＥｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｔＥｘｃｉｔａｔｉｏｎＭｅｃｈａｎｉｓｍｏｆＥｒｂｉｕｍ－ａｃｔｉｖａｔｅｄＺｉｎｃＳｕｌｆｉｄｅＳｅｍｉｃｏｎｄｕｃｔｏｒＴｈｉｎＦｉｌｍＤｅｖｉｃｅｓ￥ＬＩＵＺｈａｏｈｏｎｇ；ＷＡＮＧＹｕｊｉａｎｇ；ＣＨＥＮＺｈ...     

三源真空蒸发CuInSe_2薄膜的性能

详细分析讨论了用三源真空蒸发法制取CuInSe2薄膜过程中，源温、衬底温度及Cu，In原子比值对薄膜性能的影响。     

SnO2／Si的光伏特性

采用ＣＶＤ方法在硅单晶上制备ＳｎＯ２薄膜，对不同硅衬底及在不同温度下淀积ＳｎＯ２制得ＳｎＯ２／Ｓｉ进行光电压谱的测量，得出最佳的制备温度；采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。     

AlxGa1—xAs Solar Cell Grown by Multi—substrate Liquid Phase Epitaxy

A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE Alx Ga1-xAs/GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8%(AM0,25℃,120mW/cm^2).     

电流控制LPE生长In_（1－x）Ga_xAs_yP_（1－Y）

用电流控制液相外延（ＣＣＬＰＥ）方法首次在（１００）ＩｎＰ衬底上成功地生长出Ｉｎ１－ｘＧａｘＡｓｙＰ１－ｙ（０．３０＜ｘ＜０．４７，０．７０＜ｙ＜０．９６）外延层，并对外延层特性进行了详细研究，提出在ＩｎＰ衬底上生长电外延层的机理，推导出生长动力学的理论模型，该模型与上述实验结果十分吻合。     

Al_xGa_(1-x)As/GaAs Solar Cell Grown by Multi-substrate Liquid Phase Epitaxy

A novel horizontal push-pull multi-substrate epitaxy boat with three separate cells is introduced in this article, with which multi-substrate LPE processing is feasible in horizontal LPE furnace. The processes of LPE Al_xGa_(1-x))As/ GaAs solar cells are studied and the efficiency of the solar cells achieved 19.8% (AMO, 25℃, 120 mW/cm~2).     

化学束外延及其在半导体材料与器件中的应用

本文介绍了薄膜晶体生长的最新技术--化学束外延(CBE),通过与分子束外延(MBE)和金属有机化学汽相沉积(MOCVD)技术的比较,说明了这一新技术的基本概念,生长动力学以及在半导体材料和激光器件方面的应用.     

气体吸附对SnO2／Si光电压的影响

测量了ＳｎＯ２／Ｓｉ表面吸附Ｈ２、液化石油气等还原性气体前后光电压的变化；分析了ＳｎＯ２／Ｓｉ表面的吸附性和机理。     

Structural and electrical properties of stable ni/cr thin films

The electrical and structural properties of nickel-chrome (NiCr) thin film resistors were studied for the effect of post-deposition annealing on stability. The temperature coefficient of resistance (TCR) of sheet resistivities in the range of 100 to 200 Ω/□ could be improved by both air and vacuum annealing to achieve 5 ± 5 ppm/°C over the temperature range of -180° C to +100° C. With stability tests, air annealing proved to be more favorable for stable TCR. Studies via SIMS and ESCA identified surface segregation of Cr whereas TEM micrographs revealed correlating structural transformation of the films upon annealing. An intentional impurity, Si, played an important role in achieving a low TCR.