不同中心波长飞秒脉冲激发InAs表面辐射太赫兹波的机理研究

研究了p型(100)InAs在不同中心波长飞秒激发光(750—850nm)作用下的太赫兹(THz)波辐射特性.这种太赫兹辐射的光谱性质与光学Dember效应密切相关,飞秒脉冲激发下产生的载流子在InAs表面的Dember场内做加速运动,从而辐射出THz电磁波.实验结果表明：不同中心波长的激发光作用下,InAs表面产生的Dember电场、光生载流子浓度、谷间散射效应以及处于不同状态的载流子数目都发生了变化,因而激发出太赫兹波的功率、振幅、频谱分布和有效谱宽是不同的.这项研究将有利于THz时域光谱技术以及实验     

不同抽运光强激发窄带隙半导体产生太赫兹辐射的研究

研究了窄带隙材料InAs和三种不同掺杂浓度的InN在不同抽运光强激发下产生太赫兹(THz)波的辐射特性.实验结果表明:在相同的抽运光强下,InN和InAs辐射的THz信号强度在同一量级,InAs较InN辐射效率要高一些.随着抽运光强的增大,这几种材料的发射光谱变得更宽,当抽运光增大到一定强度时,它们的发射光谱半极大值全宽(HMFW)趋于恒定.InN比InAs更容易在较低功率的抽运光作用下获得宽带太赫兹光谱.研究也表明,不同掺杂浓度对辐射THz波的强度及辐射效率有很大影响.这项研究对于探索半导体表面辐射太赫 关键词： InN InAs 太赫兹 抽运光强     

碳纳米管辐射太赫兹波的理论分析与数值验证

基于简单紧束缚方法理论,利用一维碳纳米管的量子化周期边界条件得到了碳纳米管的电子能级结构关系.并结合已报道的碳纳米管中电子与声子相互作用的实验结果,得到了碳纳米管能够辐射太赫兹波的结论.通过数值结果验证了碳纳米管在外场作用下能够产生太赫兹波,并对数值计算结果中太赫兹波的振荡现象给予合理的解释.其结果为进行碳纳米管产生太赫兹辐射的实验研究提供深入的理论基础. 关键词： 太赫兹波 碳纳米管     

级联参量振荡产生太赫兹辐射的理论研究

针对光学参量振荡产生太赫兹波转换效率低的缺点, 提出了级联参量振荡产生太赫兹波的新机理以提高转换效率. 以周期极化铌酸锂晶体为例, 对级联参量振荡产生太赫兹波的原理和过程进行了理论研究. 分析了抽运光波长、周期极化铌酸锂晶体极化周期和工作温度对产生一阶、二阶闲频光频率的影响. 推导了三波共线相互作用条件下太赫兹波的增益特性和吸收特性. 计算结果表明, 通过级联参量振荡可以有效提高太赫兹波的转换效率, 并可以得到宽调谐的太赫兹波输出. 基于分析结果, 设计了周期极化铌酸锂晶体级联参量振荡产生高效率、宽调谐、窄线宽、连续太赫兹波的实验. 关键词： 太赫兹波 太赫兹波参量振荡 级联参量振荡     

光子晶体对太赫兹波的调制特性研究

利用传输矩阵方法研究了掺杂半导体n-GaAs/聚碳酸脂一维光子晶体的太赫兹波透射谱.研究结果发现,与一般由两种介电材料组成的一维光子晶体不同,由于掺杂半导体中自由载流子对太赫兹波存在较强的吸收,所以这种材料组成的一维光子晶体除可形成光子带隙外,还可以增强n-GaAs对太赫兹波的透射.同时还提出了一种基于这种一维光子晶体的太赫兹波调制器,通过外加电压控制半导体中电子浓度的大小可实现对太赫兹透射波幅度的调制. 关键词： 掺杂半导体光子晶体 太赫兹波 太赫兹波的调制     

超低温高电场下GaAs的电子太赫兹功耗谱的研究

利用自由空间太赫兹电光取样方法,测量了在高电场下,GaAs中受飞秒激光脉冲激发的电子所辐射出的太赫兹电磁波,发现从样品中辐射出的和电子加速度成正比的太赫兹电磁波电场强度E_THz（t）,表现出双极特性.通过分析GaAs中辐射出的太赫兹电磁波的傅里叶变换谱,首次实验上得到在阶跃电场下的GaAs的电子太赫兹功耗谱.研究发现,当电场小于50 kV/cm时,由电子谷间散射引起的负功耗（即增益）的截止频率ν_c,随着电场的增大而增大;当电场大于50 kV/cm时,负功耗的截止频率ν_c开始在750 GHz（10 K）附近饱和. 关键词： 太赫兹 非平衡载流子 功耗谱 谷间散射     

利用康普顿散射实现太赫兹皮秒脉冲的分析

 研究了利用微波与电子束团的康普顿散射实现太赫兹的方法、光子产额和辐射功率。推导出了单个电子产生的太赫兹的光子产额和辐射功率表达式,也推导出了电子束团产生的太赫兹的光子总产额和辐射总功率表达式。结果发现：利用微波与电子束团发生康普顿垂直散射,可以产生太赫兹皮秒脉冲;单个电子产生的太赫兹光子产额与微波功率、微波波长成正比,与微波束截面积成反比;单个电子产生的太赫兹辐射功率与微波功率、电子Lorentz因子的平方成正比,与微波束截面积成反比;电子束团产生的太赫兹光子总产额与微波功率的平方、微波波长的平方成正比,与微波束截面积的平方成反比;电子束团产生的太赫兹辐射总功率与微波功率的平方、微波波长以及电子Lorentz因子的平方成正比,与微波束截面积的平方成反比。     

利用康普顿散射实现太赫兹皮秒脉冲的分析

研究了利用微波与电子束团的康普顿散射实现太赫兹的方法、光子产额和辐射功率。推导出了单个电子产生的太赫兹的光子产额和辐射功率表达式,也推导出了电子束团产生的太赫兹的光子总产额和辐射总功率表达式。结果发现：利用微波与电子束团发生康普顿垂直散射,可以产生太赫兹皮秒脉冲;单个电子产生的太赫兹光子产额与微波功率、微波波长成正比,与微波束截面积成反比;单个电子产生的太赫兹辐射功率与微波功率、电子Lorentz因子的平方成正比,与微波束截面积成反比;电子束团产生的太赫兹光子总产额与微波功率的平方、微波波长的平方成正比,与微波束截面积的平方成反比;电子束团产生的太赫兹辐射总功率与微波功率的平方、微波波长以及电子Lorentz因子的平方成正比,与微波束截面积的平方成反比。     

石墨烯太赫兹波动态调制的研究进展

石墨烯是一种有着独特电学和光学性质的二维材料,近年来在太赫兹波动态调制的研究中有着广泛的应用。本文主要对基于石墨烯的太赫兹波动态调制器件进行了综述,分析了电调制、光调制和光电混合调制3种调制方法的原理和优缺点,介绍了近几年来将石墨烯应用于太赫兹波动态调制所取得的一系列科研成果,着重对不同器件的调制性能进行了对比,分析了优势和不足。石墨烯可调超材料为实现更快速、高效的太赫兹调制器件提供了新的思路。     

太赫兹波段表面等离子光子学研究进展

表面等离子光子学是研究金属、 半导体纳米结构材料独特的光学特性, 是目前光子学中最有吸引力、 发展最快的领域之一. 伴随着微/纳制造技术与计算机模拟技术的进步, 表面等离子光子学在可见光、 红外、 太赫兹以及微波频域得到了广泛研究, 在高灵敏生化传感、 亚波长光波导、 近场光学显微、 纳米光刻等领域有潜在的应用价值. 特别是人工超材料的发展, 为自然界长期缺乏响应太赫兹波的材料和器件奠定了基础, 从而也促进了太赫兹波段表面等离子光子学的研究. 本文从太赫兹表面等离子波的激发、 传导、 最新应用及未来发展趋势等几个方面进行了回顾和讨论, 将最新研究成果展示给读者.     

Linear and nonlinear characteristics of time-resolved photoluminescence modulation by terahertz pulse

The linear and nonlinear characteristics of time-resolved photoluminescence(PL) of n-type bulk semiconductor Ga As modulated with terahertz(THz) pulse are studied by using an ensemble Monte Carlo(EMC) method. In this paper the center energy valley(Γ valley) electron concentration changes with the pulse delay time, sampling time and the outfield are mainly discussed. The results show that the sampling time and the THz field should exceed certain thresholds to effectively excite photoluminescence quenching(PLQ). Adopting a direct current(DC) field makes the sampling time threshold shortened and the linear range of THz field-modulation PL expanded. Moreover, controlling the sampling time and the outfield intensity can improve the linear quality: with forward time, the larger outfield is used; with backward time, the smaller outfield is used. This study can provide a theoretical basis of THz field linear modulation in a larger range for new light emitting devices.     

不同波长飞秒脉冲的相位测量

飞秒脉冲技术的不断发展能够较方便地产生不同波段和结构特性的飞秒脉冲. 对已有的改进型零附加相位光谱相位相干电场重构系统进行优化整合,使之胜任不同特性飞秒脉冲的测量. 利用该系统测量了两台飞秒激光系统输出不同波长的脉冲及其通过厚度为80 mm的BK7玻璃块而得到的啁啾脉冲. 实验结果表明,该系统的适用范围较宽. 关键词： 光谱相位相干直接电场重构法 飞秒脉冲测量 波长     

Monte Carlo Study of Terahertz Radiation from InAs

In this paper we investigated the THz radiation dynamics in InAs using the ensemble Monte Carlo method. Our simulations indicated that THz pulse shapes (temporal waveforms) are closely related with the pump laser fluence. The sharp, negative peak of a THz pulse may result from the electron intervalley transfers from center valley to satellite valleys. Our numerical results show that higher laser fluence is an advantage in enhancing the output of high frequency components. The spato-temporal distributions of photo-Dember fields on the semiconductor surface were also analyzed.     

Generation of ultrabroadband terahertz radiation under optical breakdown of air by two femtosecond pulses of different frequencies

Experimental results on the generation of terahertz (THz) electromagnetic radiation under ionization of air by femtosecond pulses at fundamental and second-harmonic frequencies of a Ti-sapphire laser are presented. The mean power of the generated THz radiation as a function of the time delay between two pulses of different frequencies is found to be quasi-periodical. Theoretically, we show that efficient generation of THz radiation is governed by the inertial part of the nonlinear response of the medium, which is determined by the dynamics of population of highly excited states with subsequent emission of electrons.     

Modeling of Terahertz Radiation from InSb and InAs

In this paper the THz radiation dynamics of InSb and InAs, two typical narrow band semiconductors, was investigated using the ensemble Monte Carlo method. Our simulations indicated that the single mechanism of current surge only can result in small difference of THz emission efficiency for InSb and InAs. The great advantage of InAs over InSb in THz emission efficiency that was found in a published work is possibly due to the mechanism of optical rectification. In addition, under low excitation level, we found the emission efficiency of InSb is advantage over that of InAs, but under high excitation level, the result is reversed. On the other hand, through the Fourier transforms of temporal THz waveforms we found that the main frequency of THz pulses from InAs is always higher than that of InSb.     

Nonlinear radiation response of n-doped indium antimonide and indium arsenide in intense terahertz field

The nonlinear radiation responses of two different n-doped bulk semiconductors: indium antimonide(In Sb) and indium arsenide(In As) in an intense terahertz(THz) field are studied by using the method of ensemble Monte Carlo(EMC)at room temperature. The results show that the radiations of two materials generate about 2-THz periodic regular spectrum distributions under a high field of 100 k V/cm at 1-THz center frequency. The center frequencies are enhanced to about 7 THz in In Sb, and only 5 THz in In As, respectively. The electron valley occupancy and the percentage of new electrons excited by impact ionization are also calculated. We find that the band nonparabolicity and impact ionization promote the generation of nonlinear high frequency radiation, while intervalley scattering has the opposite effect. Moreover, the impact ionization dominates in In Sb, while impact ionization and intervalley scattering work together in In As. These characteristics have potential applications in up-convension of THz wave and THz nonlinear frequency multiplication field.     

Formation of a sequence of femtosecond optical pulses with a terahertz repetition rate

We have shown experimentally that, upon interference of two frequency-modulated femtosecond pulses, a sequence of ultrashort subpulses is formed to which a quasi-discrete spectral continuum corresponds in the spectral range. We have shown that it is possible to control the duration and repetition rate of subpulses in the sequence by varying the delay between the interfering pulses.     

Generation of terahertz radiation during reflection of femtosecond laser pulses from a metal surface

The features of terahertz radiation generated upon oblique incidence of a femtosecond laser pulse on a metal surface are investigated theoretically. We propose a Cherenkov-type generation mechanism associated with excitation of low-frequency surface currents by a p-polarized optical field. The nonlinear surface currents and corresponding electrodynamic characteristics of low-frequency radiation are calculated analytically and by numerical simulation using the hydrodynamic model. The features of Cherenkov generation of terahertz radiation are analyzed, and techniques are proposed for increasing efficiency.