The effect of Cu substitution on microstructure and thermoelectric properties of LaCoO(3) ceramics

La(Co, Cu)O(3-δ) ceramics were prepared by pressureless sintering of citrate precursor powders, and their thermoelectric properties were investigated with an emphasis on the influence of Cu doping and phase structure as well as microstructure. It was found that a secondary phase first appeared in the form of a network along the grain boundaries and then changed to dispersion with increasing Cu content, which effectively reduced the lattice thermal conductivity of the materials. The thermal conductivity was only 1.21 W m(-1) K(-1) for the sample LaCo(0.75)Cu(0.25)O(3-δ), being much lower as for the thermoelectric oxide materials. In addition, a small amount of Cu substitution for Co increased the electrical conductivity greatly and the absolute Seebeck coefficient, whose sign was also reversed from negative to positive. The dimensionless figure of merit, ZT, of LaCoO(3-δ) oxides at low and middle temperatures can be remarkably enhanced by substituting Co with Cu.     

CaMn(1-x)Nb(x)O3 (x < or = 0.08) perovskite-type phases as promising new high-temperature n-type thermoelectric materials

Perovskite-type CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) compounds were synthesized by applying both a "chimie douce" (SC) synthesis and a classical solid state reaction (SSR) method. The crystallographic parameters of the resulting phases were determined from X-ray, electron, and neutron diffraction data. The manganese oxidations states (Mn(4+)/Mn(3+)) were investigated by X-ray photoemission spectroscopy. The orthorhombic CaMn(1-x)Nb(x)O(3+/-delta) (x = 0.02, 0.05, and 0.08) phases were studied in terms of their high-temperature thermoelectric properties (Seebeck coefficient, electrical resistivity, and thermal conductivity). Differences in electrical transport and thermal properties can be correlated with different microstructures obtained by the two synthesis methods. In the high-temperature range, the electron-doped manganate phases exhibit large absolute Seebeck coefficient and low electrical resistivity values, resulting in a high power factor, PF (e.g., for x = 0.05, S(1000K) = -180 microV K(-1), rho(1000K) = 16.8 mohms cm, and PF > 1.90 x 10(-4) W m(-1) K(-2) for 450 K < T < 1070 K). Furthermore, lower thermal conductivity values are achieved for the SC-derived phases (kappa < 1 W m(-1) K(-1)) compared to the SSR compounds. High power factors combined with low thermal conductivity (leading to ZT values > 0.3) make these phases the best perovskitic candidates as n-type polycrystalline thermoelectric materials operating in air at high temperatures.     

Optoelectronic structure and related transport properties of BiCuSeO-based oxychalcogenides: First principle calculations

Recent experiments have revealed that the p-type BiCuSeO-based oxychalcogenides compounds exhibit a high thermoelectric figures of merit due to their very low lattice thermal conductivities and moderate Seebeck coefficient in the medium temperature range. In the present work, we reported on the optoelectronic and thermoelectric properties using the full potential linear augmented plane wave method and modified Becke-Johnson potential with spin-orbit coupling. The properties show that the BiCuSeO-based oxychalcogenides exhibit a semiconductor behavior with band gap values of 0.51, 0.45 and 0.41 eV for BiCuSO, BiCuSeO, and BiCuTeO, respectively. Due to their prominent role for thermoelectric applications, we combined Boltzmann transport theory to DFT results to compute the transport properties, mainly electronic conductivity, thermal conductivity, Seebeck coefficient and power factor. The present results show the dominance of BiCuTeO for thermoelectric application compared to the BiCuSO and BiCuSeO.     

Nanostructured Bi(2-x)Cu(x)S3 bulk materials with enhanced thermoelectric performance

Nanostructured Bi(2-x)Cu(x)S(3) (x = 0, 0.002, 0.005, 0.007, 0.01, 0.03) thermoelectric polycrystals were fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods. The effect of Cu content on the microstructure and thermoelectric property of Bi(2-x)Cu(x)S(3) bulk samples was investigated. It was found that the subtle tailoring of Cu content could reduce both the electrical resistivity and the thermal conductivity at the same time, and consequently enhancing the thermoelectric property. A low electrical resistivity of 1.34 × 10(-4)Ω m(-1) and a low thermal conductivity of 0.52 W m(-1) K(-1) were obtained for the Bi(1.995)Cu(0.005)S(3) sample at 573 K. The low thermal conductivity is supposed to be due to the nanoscopic Cu-rich regions embedded in the host matrix. A peak ZT value of 0.34 at 573 K was achieved for the Bi(1.995)Cu(0.005)S(3) composition, which is the highest value in the Bi(2)S(3) system reported so far.     

Enhanced TE properties of Cu@Ag/Bi2Te3 nanocomposites by decoupling electrical and thermal properties

Cu@Ag/Bi2Te3 nanocomposites were prepared for the first time by ultrasonic dispersion-rapid freezedrying method combined with spark plasma sintering(SPS).By changing the content of Cu@Ag nanoparticle,we could modulate the temperature dependent thermoelectric properties.The highest ZT value can be obtained at 450 K for 1 vol%Cu@Ag/Bi2Te3,which is benefited from the decoupling of electrical and thermal properties.With the increase of electrical conductivity,the absolute value of Seebeck coefficient lifts while the thermal conductivity declines.Meanwhile,the average ZT value between 300 K and 475 K was 0.61 for 1 vol%Cu@Ag/Bi2Te3,which is much higher than that of pristine Bi2 Te3.Therefore,the decoupling effect of Cu@Ag nanoparticles incorporation could be a promising method to broaden the application of Bi2Te3 based thermoelectric materials.     

Anisotropic thermoelectric properties of Bi1.9Lu0.1Te2.7Se0.3 textured via spark plasma sintering

Spark plasma sintering method was applied to prepare bulk n-type Bi_1.9Lu_0.1Te_2.7Se_0.3 samples highly textured along the 001 direction parallel to the pressing direction. The texture development is confirmed by X-ray diffraction analysis and scanning electron microscopy. The grains in the textured samples form ordered lamellar structure and lamellar sheets lie in plane perpendicular to the pressing direction. The average grain size measured along the pressing direction is much less as compared to the average grain size measured in the perpendicular direction (∼50 nm against ∼400 nm). A strong anisotropy in the transport properties measured along directions parallel and perpendicular to the pressing direction within the 290 ÷ 650 K interval was found. The specific electrical resistivity increases and the thermal conductivity decreases for the parallel orientation as compared to these properties for the perpendicular orientation. The Seebeck coefficient for both orientations is almost equal. Increase of the electrical resistivity is stronger than decrease of the thermal conductivity resulting in almost three-fold enhancement of the thermoelectric figure-of-merit coefficient for the perpendicular orientation (∼0.68 against ∼0.24 at ∼420 K). The texturing effect can be attributed to (i) recovery of crystal structure anisotropy typical for the single crystal Bi₂Te₃-based alloys and (ii) grain boundary scattering of electrons and phonons. An onset of intrinsic conductivity observed above T_d ≈ 410 K results in appearance of maxima in the temperature dependences of the specific electrical resistivity, the Seebeck coefficient and the thermoelectric figure-of-merit coefficient and minimum in the temperature dependence of the total thermal conductivity. The intrinsic conductivity is harmful for the thermoelectric efficiency enhancement since thermal excitation of the electron-hole pairs reduces the Seebeck coefficient and increases the thermal conductivity.     

Thermoelectric properties of Yb(x)Eu(1-x)Cd2Sb2

The thermoelectric performance of EuCd(2)Sb(2) and YbCd(2)Sb(2) was improved by mixed cation occupation. The composition, structure, and thermoelectric properties of Yb(x)Eu(1-x)Cd(2)Sb(2) (x=0, 0.5, 0.75, and 1) have been investigated. Polycrystalline samples are prepared by direct reaction of the elements. Thermoelectric properties were investigated after densification of the materials by spark plasma sintering. Yb(x)Eu(1-x)Cd(2)Sb(2) crystallizes in the P3m1 space group. The lattice parameters increase with the europium content. These materials show low electrical resistivity, high Seebeck coefficient, and low thermal conductivity together with high carrier concentration and high carrier mobility. ZT values of 0.88 and 0.97 are obtained for Yb(0.5)Eu(0.5)Cd(2)Sb(2) and Yb(0.75)Eu(0.25)Cd(2)Sb(2) at 650 K, respectively.     

Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-)

Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3.     

Ag/Yb掺杂对Ca_3Co_(3.9)Cu_(0.1)O_(9-δ)热电性能的影响

采用溶胶凝胶及冷压方法,通过在Ca_3Co_(3.9)Cu_(0.1)O_(9-δ)体系中引入不同量的Ag~+或Yb~(3+)离子来调控体系的热电性能,制备了可在300~880 K下稳定存在且热电性能优良的陶瓷材料Ca_(3-x)Ag_xCo_(3.9)Cu_(0.1)O_(9-δ)(x=0.1,0.15,0.2,0.3)和Ca_(3-y)Yb_yCo_(3.9)Cu_(0.1)O_(9-δ)(y=0.05,0.1,0.2,0.3).通过X射线衍射(XRD)和扫描电子显微镜(SEM)等测试手段对产物进行了表征,结果显示所制备的样品纯度较高,晶粒均匀,晶粒间较致密.适量的Ag~+,Yb~(3+)离子取代Ca~(2+)离子固溶到晶体中使制备的双掺杂材料晶胞体积发生了变化,但并未引起晶体对称结构的变化.电阻率和Seebeck系数的表征结果说明双掺杂优化了载流子的浓度,随着温度的升高电阻率不断减小,Seebeck系数不断增大.经过计算可知Seebeck系数的增大还有电子有效质量的贡献.热导率表征结果显示双掺杂体系的热导率随着温度的升高而减小,其中声子热导依然起主要作用,这与单掺杂体系的结果一致.随着温度的升高,双掺杂样品Ca_(2.7)Ag_(0.3)Co_(3.9)Cu_(0.1)O_(9-δ)在880 K下ZT值达到最大,为0.2.     

p-Type thermoelectric properties of the oxygen-deficient perovskite Ca2Fe2O5 in the brownmillerite structure

Brownmillerite calcium ferrite was synthesized in air at 1573 K and thermoelectric properties (direct current electrical conductivity σ, Seebeck coefficient α, thermal conductivity κ, thermal expansion α_L) were measured from 373 to 1050 K in air. Seebeck coefficient was positive over all temperatures indicating conduction by holes, and electrical properties were continuous through the Pnma-Imma phase transition. Based on the thermopower and conductivity activation energies as well as estimated mobility, polaron hopping conduction was found to dominate charge transport. The low electrical conductivity, <1 S/cm, limits the power factor (α²σ), and thus the figure of merit for thermoelectric applications. The thermal conductivity values of ∼2 W/mK and their similarity to Ruddlesden-Popper phase implies the potential of the alternating tetrahedral and octahedral layers to limit phonon propagation through brownmillerite structures. Bulk linear coefficient of thermal expansion (∼14×10⁻⁶ K⁻¹) was calculated from volume data based on high-temperature in situ X-ray powder diffraction, and shows the greatest expansion perpendicular to the alternating layers.     

Chemical Bonding Tuned Lattice Anharmonicity Leads to a High Thermoelectric Performance in Cubic AgSnSbTe3

Comprehension of chemical bonding and its intertwined relation with charge carriers and heat propagation through a crystal lattice is imperative to design compounds for thermoelectric energy conversion. Here, we report the synthesis of large single crystal of new p-type cubic AgSnSbTe₃ which shows an innately ultra-low lattice thermal conductivity (κ_lat) of 0.47–0.27 Wm⁻¹ K⁻¹ and a high electrical conductivity (1238 – 800 S cm⁻¹) in the temperature range 294–723 K. We investigated the origin of the low κ_lat by analysing the nature of the chemical bonding and its crystal structure. The interaction between Sn(5 s)/Ag(4d) and Te(5p) orbitals was found to generate antibonding states just below the Fermi level in the electronic band structure, resulting in a softening of the lattice in AgSnSbTe₃. Furthermore, the compound exhibits metavalent bonding which provides highly polarizable bonds with a strong lattice anharmonicity while maintaining the superior electrical conductivity. The electronic band structure exhibits nearly degenerate valence-band maxima that help to achieve a high Seebeck coefficient throughout the measured temperature range and, as a result, the maximum thermoelectric figure of merit reaches to ≈1.2 at 661 K in pristine single crystal of AgSnSbTe₃.     

Type-I clathrate Ba8Ni(x)Si(46-x): phase relations, crystal chemistry and thermoelectric properties

The phase relations, crystal structure and thermoelectric properties of the type-I solid solution Ba(8)Ni(x)Si(46-x) were investigated. Based on X-ray diffraction, differential thermal analysis and electron probe microanalysis data, a partial phase diagram was constructed for the Si-rich part of ternary system Ba-Ni-Si at 800 °C. The solubility range of Ni in the clathrate-I phase at 800 °C was determined (2.9 ≤x≤ 3.8) and thermoelectric properties, namely electrical resistivity, Seebeck-coefficient and thermal conductivity, were measured in the temperature range from 300 to 850 K. A shift of the thermoelectric properties from a predominantly metallic to a more semiconducting behavior was observed for an increasing Ni-content. Density functional calculations revealed a significant decrease of the gap width in the density of states induced by the incorporation of Ni. Electrical resistivity and Seebeck coefficients for Ba(8)Ni(x)Si(46-x) with 3.3 ≤x≤ 3.8 have been modeled within the rigid band approximation.     

Seebeck coefficients in ionic liquids--prospects for thermo-electrochemical cells

Measurement of Seebeck coefficients in a range of ionic liquids (ILs) suggests that these electrolytes could enable the development of thermoelectric devices to generate electrical energy from low-grade heat in the 100-150 °C range.     

Decoupling the electrical conductivity and Seebeck coefficient in the RE2SbO2 compounds through local structural perturbations

Compromise between the electrical conductivity and Seebeck coefficient limits the efficiency of chemical doping in the thermoelectric research. An alternative strategy, involving the control of a local crystal structure, is demonstrated to improve the thermoelectric performance in the RE(2)SbO(2) system. The RE(2)SbO(2) phases, adopting a disordered anti-ThCr(2)Si(2)-type structure (I4/mmm), were prepared for RE = La, Nd, Sm, Gd, Ho, and Er. By traversing the rare earth series, the lattice parameters of the RE(2)SbO(2) phases are gradually reduced, thus increasing chemical pressure on the Sb environment. As the Sb displacements are perturbed, different charge carrier activation mechanisms dominate the transport properties of these compounds. As a result, the electrical conductivity and Seebeck coefficient are improved simultaneously, while the number of charge carriers in the series remains constant.     

High-throughput screening for combinatorial thin-film library of thermoelectric materials

A high-throughput method has been developed to evaluate the Seebeck coefficient and electrical resistivity of combinatorial thin-film libraries of thermoelectric materials from room temperature to 673 K. Thin-film samples several millimeters in size were deposited on an integrated Al2O3 substrate with embedded lead wires and local heaters for measurement of the thermopower under a controlled temperature gradient. An infrared camera was used for real-time observation of the temperature difference Delta T between two electrical contacts on the sample to obtain the Seebeck coefficient. The Seebeck coefficient and electrical resistivity of constantan thin films were shown to be almost identical to standard data for bulk constantan. High-throughput screening was demonstrated for a thermoelectric Mg-Si-Ge combinatorial library.     

Partial charge ordering in the mixed-valent compound

Crystals of the mixed-valent compound were grown from a flux. The room temperature conductivity of a crystal was 3 S/cm but decreased smoothly with decreasing temperature to 10⁻⁵ S/cm at 25 K. Magnetic susceptibility data indicate a localized moment for Rh⁴⁺. A Seebeck coefficient at 200 K of +280 μV/K further confirms that this compound is a semiconductor rather than a metal with a partially filled 4d t_2g band. A structure refinement based on single crystal X-ray diffraction data obtained at 173 and 296 K provided Rh–O distances sufficiently accurate to indicate the nature of the charge ordering between Rh³⁺ and Rh⁴⁺. The large Seebeck coefficient coupled with the high electrical conductivity indicates that this may be a promising low-temperature thermoelectric material.     

Electrochemical Treatment for Effectively Tuning Thermoelectric Properties of Free‐Standing Poly(3‐methylthiophene) Films

The degree of oxidation of conducting polymers has great influence on their thermoelectric properties. Free‐standing poly(3‐methylthiophene) (P3MeT) films were prepared by electrochemical polymerization in boron trifluoride diethyl etherate, and the fresh films were treated electrochemically with a solution of propylene carbonate/lithium perchlorate as mediator. The conductivity of the resultant P3MeT films depends on the doping level, which is controlled by a constant potential from ?0.5 to 1.4 V. The optimum electrical conductivity (78.9 S cm^?1 at 0.5 V) and a significant increase in the Seebeck coefficient (64.3 μV K^?1 at ?0.5 V) are important for achieving an optimum power factor at an optimal potential. The power factor of electrochemically treated P3MeT films reached its maximum value of 4.03 μW m^?1 K^?2 at 0.5 V. Moreover, after two months, it still exhibited a value of 3.75 μW m^?1 K^?2, and thus was more stable than pristine P3MeT due to exchange of doping ions in films under ambient conditions. This electrochemical treatment is a significant alternative method for optimizing the thermoelectric power factor of conducting polymer films.     

Chemical bonding and properties of "layered" quaternary antimonide oxide REOZnSb (RE = La, Ce, Pr, Nd)

An efficient route to construct a three-dimensional crystal structure is stacking of two-dimensional building blocks (2D-BBs). The crystal structures of potential thermoelectric compounds REOZnSb (RE = La, Ce, Pr, Nd) were virtually constructed from insulating [REO] and conducting [ZnSb] layers. Further optimizations performed by means of first-principles calculations show that REOZnSb should exhibit semimetal or narrow band-gap semiconductor behaviors, which is a prerequisite for high thermoelectric efficiency. The analysis of the electron localizability indicator for LaOZnSb reveals mostly covalent polar interactions between all four kinds of atoms. The electron density yields completely balanced ionic-like electronic formula La(1.7+)O(1.2-)Zn(0.4+)Sb(0.9-). Furthermore, the samples of REOZnSb have been synthesized via solid-state reaction, and their crystal structures were confirmed by powder X-ray diffraction. The differences in cell parameters between the theoretically optimized and the experimental values are smaller than 2%. The temperature dependence of the magnetic susceptibility shows that LaOZnSb is diamagnetic above 40 K, whereas CeOZnSb, PrOZnSb and NdOZnSb are Curie-Weiss-type paramagnets. Electrical conductivity and Seebeck effect measurements indicate that REOZnSb are p-type semiconductors. A considerably high Seebeck coefficient and low thermal conductivity were obtained for pure LaOZnSb, but its low electrical conductivity leads to a small ZT. The high adjustability of the crystal structure as well as properties by optimization of the chemical composition in the compounds REOZnSb provide good prospects for achieving high thermoelectric efficiency.     

Multi-temperature synchrotron PXRD and physical properties study of half-Heusler TiCoSb

Phase pure samples of the half-Heusler material TiCoSb were synthesised and investigated. Multi-temperature synchrotron powder X-ray diffraction (PXRD) data measured between 90 and 1000 K in atmospheric air confirm the phase purity, but they also reveal a decomposition reaction starting at around 750 K. This affects the high temperature properties since TiCoSb is semiconducting, whereas CoSb is metallic. Between 90 K and 300 K the linear thermal expansion coefficient is estimated to be 10.5 × 10(-6) K(-1), while it is 8.49 10(-6) K(-1) between 550 K and 1000 K. A fit of a Debye model to the Atomic Displacement Parameters obtained from Rietveld refinement of the PXRD data gives a Debye temperature of 395(4) K. The heat capacity was measured between 2 K and 300 K and a Debye temperature of 375(5) K was obtained from modelling of the data. Coming from low temperatures the electrical resistivity shows a metallic to semiconducting transition at 113 K. A relatively high Seebeck coefficient of ～-250 μV K(-1) was found at 400 K, but the substantial thermal conductivity (～10 W mK(-1) at 400 K) leads to a moderate thermoelectric figure of merit of 0.025 at 400 K.     

Preparation and thermoelectric properties of AgPbmSbSem+2 materials

Hydrothermally synthesized AgPb_mSbSe_m+2 (m=10, 12, 16, 18) nanoparticles with diameters of 20-50 nm were compacted by pressureless sintering. The Seebeck coefficient and electrical conductivity of the samples were measured from room temperature up to ∼750 K. The samples show large and positive values of the Seebeck coefficient and moderate electrical conductivity. The thermoelectric properties of Ag_xPb₁₈SbSe₂₀ (x=0.8, 0.85) and AgPb₁₈SbSe_20−yTe_y (y=1, 3) samples have also been studied. It has been found that Ag_0.85Pb₁₈SbSe₂₀ sample has a higher thermoelectric power factor. A significant difference in thermoelectric properties has also been observed for the AgPb₁₈SbSe₂₀ samples prepared with pressureless sintering and spark plasma sintering.