Relativistic calculations of the spectroscopic properties of low-lying states of ICI

Relativistic quantum calculations which include spin-orbit interactions and correlations were carried out for the low-lying states of ICl. Spectroscopic properties (R₃, ω_e, T_e) were calculated for these states. Based on the energies and wave functions both the absorption and emission spectra of ICl in the region below 45000 cm⁻¹ were interpreted. These calculations confirm the predissociation of the B0⁺ state and the existence of a second minimum (B′0⁺) in the 0⁺(II) state. Properties of the 0⁻(I)(³Π_0⁻) state which is yet to be observed were also predicted. The calculated properties for the 2(I)(³Π₂) state are in very good agreement with the properties obtained by the very recent characterization of the A′ state by optical three-photon resonance. The continuous and diffuse absorption spectra of ICl in the region below 45000 cm⁻¹ were interpreted and assigned to the appropriate electronic transitions.     

Structural and optical properties of Ba(Ti1−x,Nix)O3 thin films prepared by sol–gel process

Ba(Ti_1−x,Ni_x)O₃ thin films were prepared on fused quartz substrates by a sol–gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that Ni-doping has an obvious effect on the energy band structure. The energy gap of Ba(Ti_1−x,Ni_x)O₃ decreased linearly with the increase of Ni concentration. It indicates that the adjusting of band gap can be achieved by controlling the Ni-doping content accurately in Ba(Ti_1−x,Ni_x)O₃ thin films. This has potential application in devices based on ferroelectric thin films.     

Measurement of the WWγ cross section and direct limits on anomalous quartic gauge boson couplings at LEP

The process e⁺e⁻→W⁺W⁻γ is analysed using the data collected with the L3 detector at LEP at a centre-of-mass energy of 188.6 GeV, corresponding to an integrated luminosity of 176.8 pb⁻¹. Based on a sample of 42 selected W⁺W⁻ candidates containing an isolated hard photon, the W⁺W⁻γ cross section, defined within phase-space cuts, is measured to be: σ_WWγ=290±80±16 fb, consistent with the Standard Model expectation. Including the process , limits are derived on anomalous contributions to the Standard Model quartic vertices W⁺W⁻γγ and W⁺W⁻Zγ at 95% CL: −0.043 GeV⁻²<a₀/Λ²<0.043 GeV⁻², −0.08 GeV⁻²<a_c/Λ²<0.13 GeV⁻², −0.41 GeV⁻²<a_n/Λ²<0.37 GeV⁻².     

The spectra and structure of indium iodide: The rotational and vibrational constants of the A0 state

The rotational constants of the A0⁺ state of InI are reported for the first time as B_e = 0.038077 cm⁻¹ and α_e = 0.0002373 cm⁻¹, while T_e = 24402.91 cm⁻¹ for the A0⁺-X0⁺ transition. Accurate vibrational constants for both the A0⁺ and X0⁺ states are computed from the derived band origins.     

Large nonlinear optical properties of Fe2O3 nanoparticles

Nonlinear optical properties of Fe₂O₃ nanoparticles were investigated by the signal-beam Z-scan technique with Ar⁺ and Ne–He lasers. The largest reported effective nonlinear coefficient, n₂=−8.07×10⁻⁷ cm²/W, was obtained. It is demonstrated that the nonlinear optical response originals from quantum confinement effect.     

An anomalous -ω interference in the reaction ee → 3π

It is shown that in the π⁺π⁻ meson mass-spectrum in the reaction e⁺e⁻ → π⁺π⁻π⁰ at 2E > 1 GeV one should expect the anomalously large effect of the -ω interference. It can be used as a tool for the elucidation of the details of the e⁺e⁻ → Vπ reaction dynamics and as the additional possibility for the determination of the electromagnetic -ω mixing parameters.     

Effects of superstrings in collisions

Superstring theory in d = 10 dimensions after Calabi—Yau compactification yields a minimum low-energy gauge group SU(3)_C × SU(2)_L × U(1)_Y × U(1)_E. The low-energy theory includes particles with the quantum numbers of 27 representations of E₆, each of which contains an extra neutrino ν^c conventionally called a “right-handed neutrino”. The contributions of ν and ν^c to through Z⁰ and Z_E mixing is calculated. Small contributions are found of the new right-handed neutrino and of the superstring boson Z_E to σ(e⁺e⁻ → γ + nothing).     

Dispersive optical constants of a-Se100−xSbx films

Thin films of amorphous Se_100−xSb_x (x=5,10 and 20 at%) system are deposited on a silicon substrate at room temperature (300 K) by thermal evaporation technique. The optical constant such as refractive index (n) has been determined by a method based on the envelope curves of the optical transmission spectrum at normal incidence by a Swanpoel method. The oscillator energy (E_o), dispersion energy (E_d) and other parameters have been determined by the Wemple–DiDomenico method. The absorption coefficient (α) has been determined from the reflectivity and transmitivity spectrum in the range 300–2500 nm. The optical-absorption data indicate that the absorption mechanism is a non-direct transition. We found that the optical band gap, E_g^opt, decreases from 1.66±0.01 to 1.35±0.01 eV with increase Sb content.     

Novel optical film sensor design based on p-polarized reflectance

A new scheme of optical film sensor is presented. The sensor is based on p-polarized reflectance, consisting of a sensing coated substrate, is easily optimized for maximum sensitivity in different applications. The resolutions of refractive index n_f, extinction coefficient k_f and thickness h_f of the sensitive films are predicted to be 10⁻⁷, 10⁻⁵ and 10⁻³ nm, respectively. Experimentally, we selected the sol–gel derived SnO₂ films as gas-sensitive films and conducted preliminary gas-sensing test. The results indicate that novel optical film sensor scheme has higher sensitivity, and the detection sensitivity is available to 10⁻¹ ppm on the condition of optimum optical parameters and incident angle.     

Enhanced luminescence from spontaneously ordered Gd2O3:Eu based nanostructures

Nanostructured Gd₂O₃:Eu³⁺ and Li⁺ doped Gd₂O₃:Eu³⁺ thin films were prepared by pulsed laser ablation technique. The effects of annealing and Li⁺ doping on the structural, morphological, optical and luminescent properties are discussed. X-ray diffraction and Micro-Raman investigations indicate a phase transformation from amorphous to nanocrystalline phase and an early crystallization was observed in Li⁺ doped Gd₂O₃:Eu³⁺ thin films on annealing. AFM images of Li⁺ doped Gd₂O₃:Eu³⁺ films annealed at different temperatures especially at 973 K show a spontaneous ordering of the nanocrystals distributed uniformly all over the surface, with a hillocks (or tips) like self-assembly of nanoparticles driven by thermodynamic and kinetic considerations. Enhanced photoemission from locations corresponding to the tips suggest their use in high resolution display devices. An investigation on the photoluminescence of Gd_2−xEu_xO₃ (x=0.10) and Gd_2−x−yEu_xLi_yO₃ (x=0.10, y=0.08) thin films annealed at 973 K reveals that the enhancement in luminescence intensity of about 3.04 times on Li⁺ doping is solely due to the increase in oxygen vacancies and the flux effect of Li⁺ ions. The observed decrease in the values of asymmetric ratio from the luminescence spectra of Li⁺ doped Gd₂O₃:Eu³⁺ films at high temperature region is discussed in terms of increased EuO bond length as a result of Li⁺ doping.     

Improved (1s)<Superscript>2</Superscript> variational model for helium

The ground-state energy of neutral helium is estimated variationally with a trial wavefunction of the form ϕ≈e ^−γ(rA/a _o)ⁿe^−γ(rB/a _o)ⁿ. This model represents a modification of traditional textbook examinations of this problem via inclusion of the power “n” as a second nonlinear variational parameter in addition to the usual effective nuclear charge γ and leads to an upper-limit on the ground state energy of −2.86107 E _h (E _h =1 hartree) in comparison with the traditional (n=1) result of −2.84766 E _h . This result represents a reduction of the percentage overestimate from the true ground-state energy (−2.90373 E _h ) of from 1.93 to 1.47. In comparison with the maximum accuracy obtainable from an uncorrelated trial wavefunction, −2.86168 E _h , the present trial wavefunction reduces the percentage overestimate from 0.49 (n=1) to 0.021. The optimum values of (n, γ) are determined to be ≈(0.897, 1.825).     

High-Resolution Laser Spectroscopy of YbCl: The AΠ–XΣ Transition

The A²Π–X²Σ⁺ transition of ¹⁷⁴Yb³⁵Cl and ¹⁷²Yb³⁵Cl has been rotationally analyzed for the first time. Doppler-limited laser excitation spectroscopy with selective detection of fluorescence was used to obtain spectra of the 0–0 and 1–0 bands with a measurement accuracy of approximately 0.0035 cm⁻¹. Resolved fluorescence was used to record the 0–1, 0–2, and 0–3 bands and to unequivocally assign the rotational numbering, N, to the laser excitation spectra. In total, over 1300 line positions have been measured and assigned for each of the two isotopomers and employed in least-squares fits of molecular parameters. The principal results for the A²Π state are A_e = 1491.494(2) cm⁻¹ and R_e = 2.4433(1) Å, and for the X²Σ⁺ state, R_e = 2.4883(2) Å and γ_e = 4.59(2) × 10⁻³ cm⁻¹. The interaction between the X²Σ⁺ and A²Π states has been investigated and is shown to be the main contributor to the spin–rotation splitting in the ground state.     

Study of the (9.46) meson in electron-positron annihilations

New data for the reaction e⁺e⁻→(9.46) have been obtained using the DASP detector at the DORIS storage ring. The electronic width Γ_ee is (1.5±0.4) keV. The branching ratio for the decay into muon pairs is (2.5 ± 2.1)%. Energy spectra for inclusive production of hadrons are given.     

Structural characteristics and morphology of SmxCe1−xO2−x/2 thin films

Effect of the deposition temperature (200 and 500 °C) and composition of Sm_xCe_1−xO_2−x/2 (x = 0, 10.9–15.9 mol%) thin films prepared by electron beam physical vapor deposition (EB-PVD) and Ar⁺ ion beam assisted deposition (IBAD) combined with EB-PVD on structural characteristics and morphology/microstructure was investigated. The X-ray photoelectron spectroscopy (XPS) of the surface and electron probe microanalysis (EPMA) of the bulk of the film revealed the dominant occurrence of Ce⁴⁺ oxidation state, suggesting the presence of CeO₂ phase, which was confirmed by X-ray diffraction (XRD). The Ce³⁺ oxidation states corresponding to Ce₂O₃ phase were in minority. The XRD and scanning electron microscopy (SEM) showed the polycrystalline columnar structure and a rooftop morphology of the surface. Effects of the preparation conditions (temperature, composition, IBAD) on the lattice parameter, grain size, perfection of the columnar growth and its impact on the surface morphology are analyzed and discussed.     

Spectroscopic Study of the Na2 2Σg State by cw Perturbation-Facilitated Optical-Optical Double-Resonance Spectroscopy

The Na₂(3sσ_g)(4sσ_g) 2³Σ⁺_g state of Na₂ has been observed and studied by cw perturbation-facilitated optical-optical double-resonance (PFOODR) spectroscopy for the first time. A single-mode dye laser and a Ti-sapphire laser served as the pump and the probe lasers, respectively. A total of 543 PFOODR excitation signals have been assigned to the 2³Σ⁺_g ← b³Π_1u transitions. Absolute vibrational numbering was determined by counting nodes in the 2³Σ⁺_g → a³Σ⁺_u bound-free spectra. Spectroscopic constants and the corresponding RKR potential energy curve are presented in this vsork. The values of T_e, R_e, and D_e, are found to be 25 551.237(49) cm⁻¹, 3.53463(35) Å, and 6211.5(1) cm⁻¹ respectively.     

Study of the interface Si-nc/SiO2 by infrared spectroscopic ellipsometry and X-ray photoelectron spectroscopy

SiO_x films (1<x<2), 0.5 μm thick, have been elaborated by electron-gun evaporation. A thermal annealing of these films induced a phase separation leading to the formation of Si nanocrystals embedded in a SiO₂ matrix. These films have been studied by infrared spectroscopic ellipsometry and by X-ray photoelectron spectroscopy (XPS). The effective dielectric function of the thin films has been extracted in the 600–5000 cm⁻¹ range which allowed us to deduce the dielectric function of the matrix surrounding the Si-nc. A study of the Transverse Optical (TO) vibration mode has revealed the presence of SiO_x into the matrix. Before XPS measurements, the films have been etched in fluorhydric acid to remove the superficial SiO₂ layer formed during air exposure. The Si 2p core-level emission has been recorded. The decomposition of the Si 2p peak into contributions of the usual five tetrahedrons Si-(Si_4−nO_n) (n=0–4) has also revealed the presence of a SiO_x phase. Consistency between infra-red and XPS results is discussed.     

Electronic structures of imidazolium-based ionic liquids

Electronic structures of ionic liquids formed by 1-buthyl-3-alkylimidazolium ion [C_nmim]⁺ (n = 4 and 8) with various inorganic and organic anions have been investigated by ultraviolet photoemission, X-ray photoemission, inverse photoemission and soft X-ray emission spectroscopies (SXES). The comparison of the calculated density of states with the observed spectra revealed that the molecular orbital energies of these ionic liquids are significantly affected by the electrostatic Madelung potential among the ions. The SXES results clearly show that the both highest occupied and lowest unoccupied states of [C₄mim]⁺PF₆⁻ are derived from the cation as a result of strong Madelung potential. On the other hand, the SXES results show the valence electronic structures of ionic liquids with larger anion molecules, [C_nmim]⁺Tf₂N⁻ and [C_nmim]⁺OTf⁻ are contributed from the both cation and anion.     

Metal point contacts and metal-oxide tunnel barriers fabricated with an AFM

We report the fabrication of atomic point contacts and lateral tunnel junctions by using anodic oxidation of thin metal films with an atomic force microscope.In situelectrical measurements were used as feedback to control the fabrication of metal nanowires that were subsequently anodized through their cross section to form point contacts and tunnel junctions. When the conductance of an Al device is reduced below 5×10⁻⁴S it starts to decrease in discrete steps of 2e²/h. In some devices we are able to stabilize the conductance at a value near 2e²/hwhich corresponds to a single, atomic-sized conducting channel. Similar experiments on Ti devices result in a continuous decrease of the conductance and the formation of stable tunnel junctions. This continuous behavior is a result of the large series resistance and the small oxide barrier height of the Ti/TiO_xsystem.     

Effect of annealing temperature on microstructure, optical and electrical properties of sputtered Ba0.9Sr0.1TiO3 thin films

Ba_0.9Sr_0.1TiO₃ (BST) thin films were deposited on fused quartz and Pt/TiN/Si₃N₄/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V < V < 30 V and −30 V < V < −14 V. Furthermore, the inequipotential J–V characteristics for the BST films annealed at various temperatures are mainly attributed to the combined effects of the different thermal histories, relaxed stresses and strains, and varied Schottky barrier heights in the BST/Pt and Pt/BST interfaces.     

nπ transitions in crystals of tetramethyl-1,3-cyclobutanedione-h12 and -d12

The polarized low-temperature crystal absorption spectra of tetramethyl-1,3-cyclobutanedione-h₁₂ and -d₁₂ have been measured from 25 000–40 000 cm⁻¹, and nπ^* excited states identified as follows: ³A_u with origin (-h₁₂/-d₁₂) at (25 720/25 780)cm⁻¹; ¹A_u at (27 130/27 173)cm⁻¹; two ¹B_1g states with origins near 32 000 cm⁻¹. Excitation is accompanied by distortion of the ring and a slight lengthening of the CO bonds, but the carbonyl groups remain planar. Surprisingly, CH/CD-stretching vibrations in the substituent methyl groups are active in intensity borrowing.