掺Ag纳米颗粒的BaTiO3复合薄膜的非线性光学特性

通过准分子激光(XeCl,308 nm,20 ns)在MgO(100)单晶衬底上制备了不同掺杂浓度的Ag:BaTiO3纳米复合薄膜,通过X射线衍射和X射线光电子能谱对薄膜的结构和组分进行了表征.在430 nm和470 nm附近观测到了不同浓度Ag纳米颗粒引起的等离子体吸收峰,通过z扫描技术对复合薄膜的三阶非线性光学特性进行了测量,并对其光学非线性的增强机制进行了讨论.     

脉冲激光沉积Ag:BaTiO3纳米复合薄膜及其光学特性

在MgO(100)基片上利用脉冲激光沉积技术制备了掺有Ag纳米颗粒的BaTiO₃复合薄膜.通过X射线衍射对薄膜的结构进行了表征,利用透射电子显微镜对Ag纳米颗粒的尺寸、形态进行了观测,X射线光电子能谱结果表明Ag呈金属态.在410—500nm范围内观测到了Ag纳米颗粒引起的等离子振荡峰,随着后处理温度和Ag颗粒浓度的增加,吸收峰发生红移,并出现了双峰现象. 关键词： 金属纳米复合薄膜 激光沉积 光吸收     

脉冲激光沉积Ag:BaTiO3纳米复合薄膜及其光学特性

在MgO(100)基片上利用脉冲激光沉积技术制备了掺有Ag纳米颗粒的BaTiO3复合薄膜.通过X射线衍射对薄膜的结构进行了表征,利用透射电子显微镜对Ag纳米颗粒的尺寸、形态进行了观测,X射线光电子能谱结果表明Ag呈金属态.在410-500 nm范围内观测到了Ag纳米颗粒引起的等离子振荡峰,随着后处理温度和Ag颗粒浓度的增加,吸收峰发生红移,并出现了双峰现象.     

Co:BaTiO3纳米复合薄膜的制备及其结构

用脉冲激光沉积技术(PLD)在MgO(100)基底上生长了嵌埋Co纳米晶的BaTiO3复合薄膜. 分别利用x射线衍射(XRD)、原子力显微镜(AFM)以及拉曼光谱(Raman)对薄膜的微观结构、表面 形貌进行了表征. 结果表明该薄膜为c轴取向的四方晶体结构，薄膜表面均匀、致密、 具有原子尺度的光滑性，其均方根表面粗糙度(RMS)达到015nmCo以纳米晶形式嵌埋BaTi O3基体中，呈单分散性均匀分布，其粒径随激光脉冲数的增加而增大. Co：BaTiO3纳米 复合薄膜拉曼峰的强度随钴纳米晶粒径的增加明显减弱，但是峰的宽度逐渐增加. 关键词： Co：BaTiO3 纳米复合薄膜 脉冲激光沉积     

金属纳米团簇复合薄膜Au/BaTiO3与Fe/BaTiO3的PLD制备及其光吸收特征

用脉冲激光沉积技术制备了掺杂纳米金属颗粒Au或Fe的BaTiO₃复合薄膜.用透射电子显微镜和x射线光电子能谱表征了金属颗粒的形态和化学态.330—800nm范围的吸收谱研究表明，掺Au颗粒的BaTiO₃薄膜在580nm附近有一个明显的共振吸收峰，而掺Fe颗粒的BaTiO₃薄膜没有这样的吸收峰.用Mie散射理论对结果进行了分析. 关键词： 复合薄膜 金属颗粒 脉冲激光沉积 吸收谱     

纳米GaSb-SiO2复合薄膜的非线性光学特性

利用射频磁控共溅射的方法制备出纳米GaSbSiO2镶嵌复合薄膜.用Cary5E分光光度计分析研究了复合薄膜的室温透射光吸收特性.用Z扫描方法测量了复合薄膜在6328nm处大的双光子吸收系数β≈0082mW,非线性折射率γ≈376×10-9m2W及非线性系数χ(3)≈784×10-9esu. 关键词： 纳米GaSb 双光子吸收 光学非线性     

In2O3纳米微粒非线性光学特性

用Z扫描技术研究了In₂O₃纳米微粒有机溶胶和水溶胶的三阶非线性光学特性,发现表面修饰能明显提高In₂O₃纳米微粒的非线性响应.讨论了表面偶极效应对In₂O₃纳米微粒非线性的影响. 关键词：     

Fe2O3纳米微粒溶胶非线性光学特性的Z-扫描研究

利用Z扫描技术在透明区域研究了Fe₂O₃纳米微粒水溶胶和表面包覆有机溶胶的非线性光学特性，给出了非线性折射率γ、双光子吸收系数β、自由载流子折射系数σ_r和自由载流子吸收截面σ_ab等重要物理参数，讨论了自由载流子效应对Fe₂O₃纳米微粒非线性特性的影响 关键词：     

Te/TeO2-SiO2复合薄膜的吸收和非线性光学特性研究

应用分光光度计测量Te/TeO₂-SiO₂复合薄膜的透射光谱和吸收光谱, 在480nm附近观察到Te颗粒引起的等离子体共振吸收峰; 采用Z扫描技术研究了共振(激发波长为532 nm)和非共振情况下(激发波长1064 nm) 不同电位制备薄膜的Te颗粒状态与复合薄膜的三阶非线性极化率的关系. 基于有效介质理论对复合薄膜的三阶非线性效应进行分析, 研究Te颗粒大小对Te/TeO₂-SiO₂复合薄膜的非线性光学性质的影响及其产生机理. 结果表明薄膜制备过电位增大, Te的粒径减小, 颗粒数量多, 颗粒分布趋于均匀, 使得金属颗粒的表面等离子体共振峰红移, 吸收强度增强, 导致三阶非线性光学效应增强, χ⁽³⁾由1064 nm的5.12×10^-7 esu增大为532 nm的8.11×10^-7 esu. 关键词： 碲 二氧化碲 复合薄膜 三阶非线性     

Ga30Sb70/Sb80Te20纳米复合多层薄膜的相变特性研究

采用磁控二靶(Ga₃₀Sb₇₀和Sb₈₀Te₂₀)交替溅射方法制备了新型Ga₃₀Sb₇₀/Sb₈₀Te₂₀纳米复合多层薄膜, 对多层薄膜周期中Ga₃₀Sb₇₀层厚度对相变特性的影响进行了研究. 结果表明, 多层薄膜的结晶温度可以通过周期中Ga₃₀Sb₇₀层厚度进行调节, 且随着Ga₃₀Sb₇₀层厚度的增加而升高. Ga₃₀Sb₇₀/Sb₈₀Te₂₀纳米复合多层薄膜的光学带隙随Ga₃₀Sb₇₀层厚度的增加而增大. 采用皮秒激光脉冲抽运光探测技术研究了多层薄膜的瞬态结晶动力学过程, 利用不同能量密度的皮秒激光脉冲可以实现Ga₃₀Sb₇₀/Sb₈₀Te₂₀多层薄膜非晶态和晶态的可逆转变.     

掺杂BaTiO3/SrTiO3多层膜与太赫兹波相互作用

掺杂半导体中的载流子吸收在THz波段非常明显,其相互作用研究是研制THz通信中的关键器件之一的基础。采用氟化氪（KrF）脉冲准分子激光烧蚀沉积（PLD）技术,制备了Ni掺杂BaTiO3/SrTiO3多层膜。基于辐射频率为3.09 THz、脉冲功率为10 mW量级的THz 量子级联激光器(QCL)光源研究了太赫兹波在Ni掺杂BaTiO3/SrTiO3多层膜中的传输,发现损耗主要是Ni颗粒的非共振吸收导致。     

Lead-free ferroelectric BaTiO3 doped-(Na0.5Bi0.5)TiO3 thin films processed by pulsed laser deposition technique

The difficulties in synthesizing phase pure BaTiO₃ doped-(Na_0.5Bi_0.5)TiO₃ are known. In this work, we reporting the optimized pulsed laser deposition (PLD) conditions for obtaining pure phase 0.92(Na_0.5Bi_0.5)TiO₃-0.08BaTiO₃, (BNT-BT_0.08), thin films. Dielectric, ferroelectric and piezoelectric properties of BNT-BT_0.08, thin films deposited by PLD on Pt/TiO₂/SiO₂/Si substrates are investigated in this paper. Perovskite structure of BNT-BT_0.08 thin films with random orientation of nanocrystallites has been obtained by deposition at 600 °C. The relative dielectric constant and loss tangent at 100 kHz, of BNT-BT_0.08 thin film with 530 nm thickness, were 820 and 0.13, respectively. Ferroelectric hysteresis measurements indicated a remnant polarization value of 22 μC/cm² and a coercive field of 120 kV/cm. The piezoresponse force microscopy (PFM) data showed that most of the grains seem to be constituted of single ferroelectric domain. The as-deposited BNT-BT_0.08 thin film is ferroelectric at the nanoscale level and piezoelectric.     

掺杂BaTiO3/SrTiO3多层膜与太赫兹波相互作用

掺杂半导体中的载流子吸收在THz波段非常明显,其相互作用研究是研制THz通信中的关键器件之一的基础。采用氟化氪（KrF）脉冲准分子激光烧蚀沉积（PLD）技术,制备了Ni掺杂BaTiO3/SrTiO3多层膜。基于辐射频率为3.09 THz、脉冲功率为10 mW量级的THz 量子级联激光器(QCL)光源研究了太赫兹波在Ni掺杂BaTiO3/SrTiO3多层膜中的传输,发现损耗主要是Ni颗粒的非共振吸收导致。     

Large third—order optical nonlinearity in Au nanomeytre particle doped BaTiO3 composite films near the resonant frequency

Nanometre-sized gold particles embedded in BaTiO₃ composite thin films (Au/BaTiO₃) were fabricated by the pulsed laser deposition technique. The films were grown on MgO (100) substrates at 700℃. The crystalline property of the films was studied with x-ray diffraction. X-ray photoelectron spectroscopy was used to check the Au composition and chemical nature for the deposited films. The absorption peak due to the surface plasmon resonance of Au particles was observed at the wavelength of about 570 nm, which increased as the metal particle size was increased. The nonlinear optical properties of the Au/BaTiO₃ films were determined using the z-scan method at the wavelength of 532 nm, which was close to the resonant frequency. The real and imaginary parts of the third-order nonlinear susceptibility χ⁽³⁾ at an Au concentration of about 6.7 at.% were determined to be 6.62×10^-7 esu and -6.24×10^-8 esu, respectively. The films showed a very large absorption, masking the nonlinear refraction effect at high metal concentrations.     

Electrophoretic deposition of BaTiO3/CoFe2O4 multiferroic composite films

Electrophoretic deposition was utilized for preparation of BaTiO₃/CoFe₂O₄ multiferroic composite thick films on indium-tin oxide substrates. The suspensions for electrophoretic experiments were prepared by dispersing BaTiO₃ and CoFe₂O₄ nanoparticles with different molar ratios into solvents composed of ethanol and acetylacetone. Polyvinyl butyral was added to the suspensions in order to enhance the adhesion and strength of deposit and prevent cracking. The zeta potential values of BaTiO₃/CoFe₂O₄ suspensions were measured to be 26.4-36.9 mV. The experiment results showed that deposited films were obtained only when the applied electric field was larger than a certain critical value. XRD and SEM analysis depicted the presence of constituent phases in composite films. The percolation threshold of composite films was improved through dispersing ferromagnetic phase into ferroelectric phase. Therefore, the ferroelectric properties of composite thick films were maintained when the ferromagnetic properties were enhanced significantly with increasing CFO content.     

Asymmetric reversible diode-like resistive switching behaviors in ferroelectric BaTiO3 thin films

In this work, the resistive switching behaviors of ferroelectrictric BaTiO3/La0.67Sr0.33MnO3 .heterostructures de- posited by pulsed laser deposition are investigated. The BaTiO3 films show both well-established P-E hysteresis loops, and asymmetric reversible diode-like resistive switching behaviors, involving no forming process. It is found that both the ON/OFF ratio and the stability of resistive switching are substantially dependent on operation voltage （Vmax）. At a Vmax of 15 V, a large ON/OFF resistance ratio above 1000 is obtained at a Vmax of 15 V, which is able to maintain stability up to 70-switching cycles. The above resistive switching behaviors can be understood by modulating interface Schottky barriers as demonstrated by I-V curve fitting.