Optical properties of GaAs1−x N x alloys grown by molecular beam epitaxy

Optical properties of GaAs_1?x N _x alloys grown by molecular beam epitaxy using GaAs (001) as the substrate have been studied. These include photoluminescence (PL), cathodoluminescence (CL), photocurrent and photomemory effects. The low-temperature (77?K) PL characteristics were measured on samples with 0–0.105% N content. The wide emission band indicates the defective nature of the materials. The widening of the band for materials with increasing nitrogen concentration also suggested that the concentration of defect states in these materials dramatically increased with increasing nitrogen content. The PL and CL spectra for GaAs_1?x N _x layer 1854 did not show identical characteristics. Some layers showed a very sharp fall in photocurrent at low temperatures, indicating a very sharp photoquenching and an interaction between antisite, interstitial and vacancy defects. The photomemory effect, which causes photoquenching and the transition from the EL2 to the EL2? metastable state, was strongly influenced by the optical exposure and thermal history of the sample.     

Spin states of cobalt and the thermodynamics of Sm1 − x Ca x CoO3 − δ solid solutions

In the rare-earth SmCoO₃ perovskite, Co³⁺ ions at low temperatures appear to be in the low-spin state with S = 0, t _2g ² e _g ⁰ . If Ca²⁺ ions partially substitute Sm³⁺ ions, oxygen deficient Sm_{1 ? x} Ca _x CoO_{3 ? δ} solid solutions with δ = x/2 appear. The oxygen deficiency leads to the formation of pyramidally coordinated cobalt ions Co _pyr ³⁺ in addition to the existing cobalt ions Co _oct ³⁺ within the oxygen octahedra. Even at low temperatures, these ions have a magnetic state, either S = 1, t _2g ⁵ e _g ¹ or S = 2, t _2g ⁴ e _g ² . At low temperatures, the magnetization of Sm_{1 ? x} Ca _x CoO_{3 ? δ} is mainly determined by the response of Co _pyr ³⁺ ions. Owing to the characteristic features of the crystal structure of the oxygen deficient perovskite, these ions form a set of nearly isolated dimers. At high temperatures, the magnetization of Sm_{1 ? x} Ca _x CoO_{3 ? δ} is mainly determined by the response of Co _oct ³⁺ ions, which exhibit a tendency to undergo the transition from the S = 0, t _2g ⁶ e _g ⁰ state to the S = 1, t _2g ⁵ e _g ¹ or S = 2, tt _2g ⁴ e _g ² state. In addition, the magnetization and specific heat of the solid solutions under study include the contribution from the rare-earth subsystem, which undergoes a magnetic ordering at low temperatures.     

Thermodynamic modelling of miscibility in (InAs) x (GaAs)1−x solid solutions

Current methods used to model the solution thermodynamics of III–V compound semiconductors involve the use of the valence force field as the molecular model and the regular solution model (with the temperature independent interaction parameter and underlying assumption of random mixing) as the engineering model. In this study, excess free energy models (with three or less adjustable parameters) are investigated to predict the solid–solid miscibility of (InAs) _x (GaAs)_{1? x} . The models investigated include the Porter/one-constant Margules (OCM) model, the two-constant Margules (TCM) model and the non-random two liquid (NRTL) model. These models are fit to excess free energy values derived from free energy change of mixing (variation with composition) data available from molecular simulations at different temperatures. The parameters in all the models have been found to be temperature dependent. The coexistence compositions are best predicted by the NRTL model, indicating the need to consider non-random mixing effects present in these solid solutions. The TCM model predicts better equilibrium composition data as compared to the OCM model.     

Lattice distortion in the solid solutions of UAsxSe1−x

The solid solutions of UAs_xSe_1−x for x = 0.10−0.40 were studied by X-ray diffraction at the temperature region 130–200 K. A rhomboedrical distortion of the crystal structure below T_c was observed. A dependence of an intersitial angle and coefficient of spontaneous magnetostriction on the temperature or the composition of samples was determined.     

Preparation and transport properties of Ba1−x Sr x CuO2+δ infinite layer films grown by molecular-beam epitaxy

Thin films of Ba_1–x Sr _x CuO₂₊ in the infinite layer structure were prepared by molecular beam epitaxy on SrTiO₃ substrates. Excellent in-plane order during growth was shown by RHEED. The lattice constant inc-direction was determined by x-ray diffraction. It changed from 0.404 nm to 0.345 nm whenx increased from 0 to 1. The film surfaces were smooth with some outgrowths as revealed by atomic force microscopy. Excellent crystal structure and epitaxy of the films was demonstrated by high resolution transmission electron microscopy. The room temperature dc resistivities of the films varied from 10^–3 cm to 10² cm, depending onx and on the oxidation conditions during growth. The resistivities of most films showed negative temperature coefficients and obeyed the conduction model of variable range hopping at low temperatures. In the composition rangex=0.5–0.8, however, an anomalous resistance dependence on temperature was observed in many samples. The resistivities started to deviate from the monotonic behaviour just below 200 K and in some cases dropped remarkably at temperatures below 140 K.     

Anomalous spin relaxation and quantum criticality in Mn1 − x Fe x Si solid solutions

We report results of the high frequency (60 GHz) electron spin resonance (ESR) study of the quantum critical metallic system Mn_{1 ? x} Fe _x Si. The ESR is observed for the first time in the concentration range 0 < x < 0.24 at temperatures up to 50 K. The application of the original experimental technique allowed carrying out line shape analysis and finding full set of spectroscopic parameters, including oscillating magnetization, line width and g factor. The strongest effect of iron doping consists in influence on the ESR line width and spin relaxation is marked by both violation of the classical Korringa-type relaxation and scaling behavior. Additionally, the non-Fermi-liquid effects in the temperature dependence of the ESR line width, which may be quantitatively described in the theory of Wölfle and Abrahams, are observed at quantum critical points x* ～ 0.11 and x _c ～ 0.24.     

Peculiarities of Raman spectra and phase states in Pb x Sr1−x TiO3 solid solutions with low lead concentration

Micro-Raman study of Pb _x Sr_{1 ? x} TiO₃ (x = 0.005, 0.01, 0.02, 0.03, or 0.04) solid solutions has been performed in the frequency range 15–1200 cm^?1 at several temperatures in the range 10–300 K. The results obtained suggest that the concentration region x < 0.04 in Pb _x Sr_{1 ? x} TiO₃ solid solutions should most likely be considered as heterophase.     

Magnetic and electrical properties of Mg1−x CuxO solid solutions and magnetic shielding in Cu-Mg1−x CuxO structures

Mg_1−x Cu_xO solid solutions having an NaCl structure with 0⩽x⩽0.20 are synthesized and Cu-Mg_1−x Cu_xO structures are prepared for superconductivity studies. The magnetic susceptibility χ, electron paramagnetic resonance (EPR), and electrical conductivity of the solid solutions are studied at temperatures of 5–550 K. It is shown that χ ⁻¹(T) obeys the Curie-Weiss law with a paramagnetic Curie temperature Θ close to zero and an effective magnetic moment μ _eff=1.9 μ _B, close to the 1.73 μ _B of a Cu²⁺ ion with spin S=1/2. The width ΔH of the EPR line depends weakly on temperature and increases as x is raised. The volume narrowing of the EPR linewidth ΔH is used to estimate the exchange interaction parameter, 3×10⁻⁴ eV. The g-factor is close to 2 and is temperature independent. The electrical conductivity of Mg_1−x Cu_xO at T=300 K is ≈10⁻¹¹–10⁻¹² Ω⁻¹ cm⁻¹ for x=0 and increases to 10⁻⁵–10⁻⁶ Ω⁻¹ cm⁻¹ for x=0.15–0.20. The conductivity is p-type. Magnetic shielding is observed in Cu-Mg_1−x Cu_xO structures with x=0.15 and 0.20. The possible connection of this phenomenon with interference superconductivity in the contact layer of the structure is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 293–296 (February 1999)     

Magnetic and dynamic properties of Sm x Mn1 − x S solid solutions

The real and imaginary parts of the magnetic permeability at frequencies of 0.1, 1.0, and 10.0 kHz, as well as the electron paramagnetic resonance (EPR) line width and g-factor, have been measured in Sm _x Mn_{1 ? x} S (0.10 < x < 0.25) solid solutions in the temperature range 5–300 K. The logarithmic dependence of the maximum in the imaginary part of the magnetic permeability on the frequency and the power-law dependence of Imμ on the temperature have been determined. The mechanism of relaxation of the magnetic moment in the magnetically ordered and paramagnetic phases has been established. The experimental results have been explained in terms of the Heisenberg model with competing exchange interactions and the formation of the antiaspiromagnetic state at low temperatures.     

Quantum bicriticality in Mn1 − x Fe x Si solid solutions: Exchange and percolation effects

The T-x magnetic phase diagram of Mn_{1 ? x} Fe _x Si solid solutions is probed by magnetic susceptibility, magnetization and resistivity measurements. The boundary limiting phase with short-range magnetic order (analogue of the chiral liquid) is defined experimentally and described analytically within simple model accounting both classical and quantum magnetic fluctuations together with effects of disorder. It is shown that Mn_{1 ? x} Fe _x Si system undergoes a sequence of two quantum phase transitions. The first “underlying” quantum critical (QC) point x* ～ 0.11 corresponds to disappearance of the long-range magnetic order. This quantum phase transition is masked by short-range order phase, however, it manifests itself at finite temperatures by crossover between classical and quantum fluctuations, which is predicted and observed in the paramagnetic phase. The second QC point x _c ～ 0.24 may have topological nature and corresponds to percolation threshold in the magnetic subsystem of Mn_{1 ? x} Fe _x Si. Above x _c the short-range ordered phase is suppressed and magnetic subsystem becomes separated into spin clusters resulting in observation of the disorder-driven QC Griffiths-type phase characterized by an anomalously divergent magnetic susceptibility χ ～ 1/T ^ξ with the exponents ξ ～ 0.5–0.6.     

Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1−xSb

A calculation is made of the dependences of the coefficient of the tellurium distribution K_Te and the electron concentration n in Al_xGa_1–xSb on the composition of the solid solution and the growth temperature. It is shown that K_Te must decrease with increasing x. The dependence of K_Te on the temperature is also determined by x. Experimental results were obtained on Al_xGa_1–x Sb (0 x 0.74) films grown by liquid epitaxy. The electron concentration in the films was measured through the thermoelectric power and the capacitance-voltage characteristics of Schottky barriers. Satisfactory agreement with the results of the calculation was obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 19–25, April, 1980.We thank G. K. Arbuzov for assistance in preparing the surface-barrier structures.     

Synthesis and electrochemical properties of Li8 − x Zr1 − x Nb x O6 solid solutions

New lithium-conducting solid solutions based on lithium orthozirconate have been synthesized by mutual doping of the related structures Li₈ZrO₆ and Li₇NbO₆. The main factor determining the increase in the electrical conductivity of the Li_{8 ? x} Zr_{1 ? x} Nb _x O₆ solid solutions is the formation of lithium vacancies in the tetrahedral and octahedral layers. The practical stability of the Li_{8 ? x} Zr_{1 ? x} Nb _x O₆ ceramics to metallic lithium has been studied.     

Picosecond luminescence of excitons localized by disorder in CdSxSe1−x

We have investigated in CdS_xSe_1−x and in pure CdSe the temporal evolution of the excitonic luminescence with 20 ps time resolution. In CdSe and in alloys with x < 0.15 the onset and decay of the luminescence can be described by time constants which are independent of the photon energy in the region of the free and bound excitons. In contrast, the time constants vary strongly over the main emission band for x > 0.15, which is attributed to the relaxation of excitons localized by compositional disorder. A simplified hopping model is presented which accounts for the experimental findings.     

Cathodoluminescence spectra of Cd1−x Zn x Te solid solutions

An investigation is made of the cathodoluminescence, electrical properties, and structural features of crystals of Cd_1−xZn_xTe solid solutions with composition x ranging from 0.02 to 0.20 mole fraction as compared with CdTe and ZnTe. The main bands of the cathodoluminescence spectra are identified within the range 500–2700 nm. The role of oxygen in Cd_1−xZn_xTe cathodoluminescence is shown. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 96–100, January–February, 2000.     

Elastic and thermal properties of Zr z Nb1 − z C x N y solid solutions

The temperature and concentration dependences of the elastic moduli and the thermal linear expansion coefficient of Zr _z Nb_{1 ? z} C _x N _y solid solutions containing from 3 to 8 at % of structural vacancies in a nonmetallic sublattice have been found. The temperature dependences of the Debye temperature Θ_D(T) have been calculated using the elastic data and the data on the heat capacity. It has been shown, using carbide NbC_0.97 as an example, that the Θ_D(T) dependences found from the elastic properties and the heat capacity coincide in the temperature range ～220–300 K. By analogy with the niobium carbide, the heat capacity C _p (300) of Zr _z Nb_{1 ? z} C _x N _y solid solutions of various compositions is calculated based on the values of Θ_D(300) determined from the elastic properties.     

Structural and optical properties of ZnSe x Te1−-x solid solutions in thin-film form

Solid solutions of ZnSe _x Te_1–x (0. 1 x 1) were synthesized by vacuum fusion of stoichiometric proportions of ZnSe and ZnTe. X-ray diffraction data revealed that they have polycrystalline cubic zinc-blende structure. The calculated unit cell lattice constant (a) for the different compositions in powder form vary linearly, with molecular fractionx following Vegard's law:a(x) = 6.165 – 0.485x. Thin films of ZnSe _x Te_1–x (0.1 x 1) solid solutions deposited onto glass or quartz substrates by thermal evaporation in a vacuum of 10^–4 Pa were found to be polycrystalline with a preferred (1 1 1) orientation. The obtained data were confirmed by electron diffraction. The optical studies showed that ZnSe _x Te_1–x polycrystalline films of different compositions have two direct transitions with corresponding energy gapsE _g andE _g + _so The variations in bothE _g andE _g + _so, withx indicate that ZnSe _x Te_1–x solid solution belongs to an amalgamation-type following quadratic equations with bowing parameters 1.251 and 1.275, respectively.     

Pb1−x Fe x films prepared by vapor condensation

ZF, LF and TF SR experiments with antiferromagnetic (AF) ceramical samples La_2–x Sr _x CuO_4–y have been performed in the temperature range 10–300 K. Zero field muon spin polarization functions obtained below the Neel temperature clearly show a nonzero initial precession phase-–0.35 rad. We propose an explanation based on existence of the dynamical magnetic fields on the muon.We thank Drs. A.G. Chistov and A.M. Brjazkalo from RSC Kurchatov Institute for the preparation the #2 La₂CuO_4–y sample.     

Dielectric properties and phase transitions in crystals of TlInS x Se2 − x solid solutions

This paper reports on a study of the dielectric permittivity and electrical conductivity of single-crystal TlInS _x Se_{2 − x} solid solutions as functions of temperature and composition. It has been found that the dielectric permittivity ɛ and electrical conductivity σ decrease with increasing x and increase with growing temperature. The temperature dependences ɛ = f(T) and σ = f(T) for TlInS _x Se_{2 − x} crystals have been demonstrated to reveal anomalies in the form of maxima, which suggests that these crystals undergo phase transitions. The temperatures of the phase transitions increase with increasing x.     

Concentration phase transitions in Li x Na1 − x Ta y Nb1 − y O3 solid solutions

The ferroelectric-antiferroelectric concentration phase transitions in solid solutions of Li _x Na_{1 ? x} Ta _y Nb_{1 ? y} O₃, which are promising environmentally friendly (lead-free) ferropiezoelectric materials, are studied by means of Raman spectroscopy.     

Photoluminescence of Al x Ga1−x As/GaAs quantum well heterostructures grown by molecular beam epitaxy

Nominally undoped Al_xGa_1–xAs grown by molecular beam epitaxy from As₄ species at elevated substrate temperatures of 670°C exhibits well-resolved excitonic fine structure in the low-temperature photoluminescence spectra, if the effective As-to-(Al+Ga) flux ratio on the growth surface is kept within a rather narrow range of clearly As-stabilized conditions. In contrast to previous results on Al_xGa_1–xAs of composition 0.15not to shift in energy by changing the excitation intensity. This implies a simple freeelectron carbon-acceptor recombination mechanism for the line without any participation of a donor. In Al_xGa_1–xAs of composition close to the direct-to-indirect cross-over point, two distinct LO-phonons separated by 34 and 48 meV from the (D ⁰,C ⁰) peak position at x=0.43 were observed which were before only detectable by Raman scattering experiments. The intensity of the carbon-impurity related luminescence lines in bulk-type Al_xGa_1–xAs and GaAs layers was found to be strongly reduced, as compared to the excitonic recombination lines, if the respective active layer was covered by a very thin confinement layer of either GaAs on top of Al_xGa_1–xAs or vice versa grown in the same growth cycle.