退火温度对TiO_2纳米薄膜酒精气敏特性影响的研究(英文)

采用直流磁控溅射的方法在Al2O3陶瓷管、硅基片上溅射制备了二氧化钛(TiO2)纳米薄膜材料.将薄膜样品放入管式退火炉中分别在500℃, 700℃和1100℃温度下退火.由于退火温度的不同,薄膜的晶体结构、晶粒尺寸、晶向以及气敏特性都有所不同.利用X射线衍射(XRD)技术和薄膜气敏特性测试,分析了退火温度对薄膜气敏特性的影响.分析结果表明退火温度在500℃时,呈现锐钛矿结构,薄膜具有很好的选择性、很短的反应(恢复)时间.对TiO2薄膜表面进行修饰,发现此TiO2薄膜的最佳工作温度为370℃左右.薄膜的气敏机理也得到了讨论.     

光湿敏元件及特性

介绍硅衬底的半导体陶瓷材料钛酸镧锶（Sr1-xLaxTiO3）光湿敏元件的工作原理及结构,MIS结构元件的光湿敏特性参数和曲线。利用光湿敏元件研制成光湿敏传感器和测量仪,智能光湿敏测量仪具有软件湿度补偿、智能判断声光报警等特性。     

退火温度对新型有源层WZTO薄膜晶体管性能的影响

通过溶液法制备了新型有源层钨锌锡氧化物(WZTO)薄膜晶体管(TFT),研究了不同退火温度对WZTO薄膜和TFT器件性能的影响。XRD结果表明即使退火温度达到500℃,WZTO薄膜仍为非晶态结构。W掺杂显著降低了薄膜表面粗糙度,其粗糙度均从0. 9 nm降低到0. 5 nm以下;但不影响薄膜可见光透过率,其透过率均大于85%。同时XPS分析证实随退火温度升高,WZTO薄膜中对应氧空位的峰增加。制备的WZTO器件阈值电压由8. 04 V降至3. 48 V,载流子迁移率随着退火温度的升高而增大,开关电流比达到107。     

湿敏陶瓷感湿机理的新模型讨论

本讨论了湿敏陶瓷感湿机理比较接近于实际的“镶嵌模型”，对“镶嵌模型”的线性方程进行了求解，并对结果进行了分析，为各种多孔陶瓷湿敏元件的开发提供了新途径。     

退火温度对硼掺杂纳米金刚石薄膜微结构和p型导电性能的影响

采用热丝化学气相沉积法制备硼掺杂纳米金刚石 (BDND) 薄膜, 并对薄膜进行真空退火处理, 系统研究退火温度对BDND薄膜微结构和电学性能的影响. Hall效应测试结果表明掺B浓度为5000 ppm (NHB) 的样品的电阻率较掺B浓度为500 ppm (NLB) 的样品的低, 载流子浓度高, Hall迁移率下降. 1000 ℃退火后, NLB和NHB 样品的迁移率分别为53.3和39.3 cm²·V^-1·s^-1, 薄膜的迁移率较未退火样品提高, 电阻率降低. 高分辨透射电镜、紫外和可见光拉曼光谱测试结果表明, NLB样品的金刚石相含量较NHB样品高, 高的硼掺杂浓度使薄膜中的金刚石晶粒产生较大的晶格畸变. 经1000 ℃退火后, NLB和NHB薄膜中纳米金刚石相含量较未退火时增大, 说明薄膜中部分非晶碳转变为金刚石相, 为晶界上B扩散到纳米金刚石晶粒中提供了机会, 使得纳米金刚石晶粒中B浓度提高, 增强纳米金刚石晶粒的导电能力, 提高薄膜电学性能. 1000 ℃退火能够恢复纳米金刚石晶粒的晶格完整性, 减小由掺杂引起的内应力, 从而提高薄膜的电学性能. 可见光Raman光谱测试结果表明, 1000℃退火后, Raman谱图中反式聚乙炔 (TPA) 的1140 cm^-1峰消失, 此时薄膜电学性能较好, 说明TPA减少有利于提高薄膜的电学性能. 退火后金刚石相含量的增大、金刚石晶粒的完整性提高及TPA含量的大量减少有利于提高薄膜的电学性能. 关键词： 硼掺杂纳米金刚石薄膜 退火 微结构 电学性能     

Al/BaTiO_3/Si结构的湿敏特性与机理研究

利用氩离子束镀膜技术,在N型(100)硅单晶片上淀积钛酸钡膜,并制成MIS结构.在室温下测试其电容-相对湿度(C-RH)特性和电流-相对湿度(I-RH)特性.研究退火条件与固定电荷密度和吸湿灵敏度的关系.结果表明:当相对湿度从12%变化到92%时,在1MHz的测试频率下,电容值变化了48%.在3V偏压下,电流变化了430%,且高湿时的灵敏度比低温时高.随着膜中氧组分的增大,固定电荷密度减小,吸湿响应时间增长,电流变化率下降.文中利用等效方法确定膜中的孔隙体积比和BaTiO,成分的介电常数,建立了描述C-R 关键词：     

退火温度对旋涂法制备SnO_2薄膜性能的影响

采用旋涂法在玻璃基底上制备SnO_2薄膜,通过原子力显微镜(AFM)、X射线反射(XRR)、傅氏转换红外线光谱仪(FT-IR)、X射线衍射(XRD)、紫外-可见分光光度计、四探针、开尔文探针系统对薄膜的表面形貌、结构及光学特性、电学特性进行分析,探讨了退火温度对薄膜质量的影响及作用机制。研究发现:随着退火温度升高,薄膜厚度和有机成分杂质减小,薄膜密度递增,但薄膜表面粗糙度有所上升;当退火温度升高至500℃时,薄膜结构由非晶转变为结晶,其主要晶面为氧化锡的(110)、(101)和(211)晶面。旋涂法制备的氧化锡薄膜在可见光区域的平均透光率在90%以上,随着退火温度上升,薄膜在400～800 nm波段的透光率先减小后增大,薄膜的带隙宽度分别为3. 840 eV(沉积态薄膜)、3. 792 eV(100℃)、3. 690 eV(300℃)和3. 768eV(500℃);薄膜的电导率也随着退火温度升高而增加,在500℃时电导率高达916 S/m;薄膜的功函数先增大后减小,分别为(4. 61±0. 005) eV(沉积态薄膜)、(4. 64±0. 005) eV(100℃)、(4. 82±0. 025) eV(300℃)、(4. 78±0. 065) eV(500℃)。     

退火处理对磁控溅射制备LaCoO_3薄膜性能的影响

采用磁控溅射法在硅衬底上制备了LaCoO_3(LCO)薄膜,研究了退火温度对LCO薄膜组织结构、表面形貌及热电特性的影响,并利用X射线衍射仪、原子力显微镜(AFM)、激光导热仪等对LCO薄膜的晶体结构、表面形貌、热扩散系数等进行测量与表征.结果表明:退火温度对LCO薄膜的结晶度、晶粒尺寸和薄膜表面形貌都有较大影响;退火前后LCO薄膜的热扩散系数都随温度的升高而减小,且变化速率逐渐减缓; LCO薄膜的热扩散系数随退化温度的升高先增大后减小.LCO薄膜经过700℃退火后得到最佳的综合性能,其薄膜表面致密、平整,结晶质量最好,热扩散系数最小,热电性能最好.     

0.2 nm带宽滤光片的制备以及退火温度对其形貌和性能的影响

近红外波长为1.064 μm的激光是激光测距、自由空间光通信和空间光学遥感等应用中的主要激光光源之一.窄带滤光片是抑制背景光干扰的关键元件之一,目前大部分滤光片的半峰全宽为几纳米.本文研制了中心波长为(1064±0.05) nm、半峰全宽为0.19 nm、峰值透过率可达70.2％的带通滤光片,并考察了不同温度(100,200,300℃)退火处理后滤光片的表面形貌和光谱特性的变化.实验结果表明:滤光片的表面光滑,受退火温度的影响很小;滤光片的透射光谱随着退火温度的升高向长波方向移动,在100℃退火处理3h的滤光片的光谱漂移量为0.03 nm,说明该滤光片可在温控条件有限的空间光学系统中使用.     

碳湿敏膜的非线性感湿特性和导电机理

采用羟乙基纤维素（HEC）和导电炭黑并添加山梨醇增湿剂制备碳湿敏膜,研究了膜在偏离结露区的非线性感湿特性和导电机理.扫描电镜观测到,膜中炭黑粒子形成网链状的空间导电结构;2%炭黑含量使膜的导电通路处于渗流区,膜电阻在80%RH附近对湿度有较强的非线性特性.分析I-V曲线认为,是导电网链中炭黑粒子的间距使膜电阻对湿度变化和测量电压的变化都非常敏感,非线性感湿特性与导电机理密切相关.复阻抗谱表明,碳湿敏样品在33%RH时只出现与炭黑体电阻有关的半圆弧,在80%RH时出现与炭黑粒界电 关键词： 碳湿敏膜 逾渗阈值 I-V特性')" href="#">I-V特性 复阻抗谱     

Formation of CuO nanowires by thermal annealing copper film deposited on Ti/Si substrate

Nanowires of various inorganic materials have been fabricated due to the realization of their applications in different fields. Large-area and uniform cupric oxide (CuO) nanowires were successfully synthesized by a very simple thermal oxidation of copper thin films. The copper films were deposited by electron beam evaporation onto Ti/Si substrates, in which Ti film was first deposited on silicon substrate to serve as adhesion layer. The structure characterization revealed that these nanowires are monoclinic structured single crystallites. The effects of different growth parameters, namely, annealing time, annealing temperature, and film thickness on the fabrication of the CuO nanowires were investigated by scanning electron microscopy. A typical procedure simply involved the thermal oxidation of these substrates in air and within the temperature range from 300 to 700 °C. It is found that nanowires can only be formed at thermal temperature of 400 °C. It is observed that the growth time has an important effect on the length and density of the CuO nanowires, whereas the average diameter is almost the same, i.e.50 nm. Different from the vapor-liquid-solid (VLS) and vapor-solid (VS) mechanism, the growth of nanowires is found to be based on the accumulation and relaxation of the stress.     

退火温度对溅射铝膜结构与电性能的影响

采用直流磁控溅射方法成功地制备了Al膜,研究了退火温度对Al膜表面形貌、晶体结构、应力、择优取向及反射率的影响。研究表明：不同退火温度的薄膜晶粒排布致密而光滑,均方根粗糙度小。XRD测试表明：不同温度退火的铝膜均成多晶状态,晶体结构为面心立方,退火温度升高到400 ℃时,Al膜的应力最小达0.78 GPa,薄膜平均晶粒尺寸由18.3 nm增加到25.9 nm;随着退火温度的升高,(200)晶面择优取向特性变好。薄膜紫外-红外反射率随着退火温度的升高而增大。     

Effect of deposition and annealing temperature on mechanical properties of TaN film

Tantalum nitride films (TaN) were synthesized by microwave ECR-DC sputtering. The effects of deposition and annealing temperature on mechanical properties of TaN films were investigated. Cross-section pattern, microstructure and binding energy of the films were investigated by scanning electron microscope (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. Mechanical properties were evaluated using nano-indentation and scratch tester. The results showed that the maximal hardness value of approximately 40 GPa was deposited in the TaN sample at 573 K. While the preparation temperature decreased, the hardness, modulus and adhesion of TaN film also decreased. Hardness and modulus also decreased with the increase in annealing temperature. Meanwhile the adhesion strength was also sensitive to the annealing temperature, with a maximum adhesion strength of 40 N measured in the TaN film annealed at 448 K. The results demonstrated that a desirable mechanical property of TaN films deposited by DC reactive magnetron sputtering can be obtained by controlling the deposition and annealing temperature.     

Facile synthesis of nanostructured CuO for low temperature NO2 sensing

Detection of environmental pollutant and health hazardous, nitrogen dioxide (NO₂) is reported using nanostructured CuO particulates (NPs). Powder X-ray diffraction and field emission scanning electron microscopy were used to probe crystalline phase and morphological details, respectively. Small crystallites of ∼10–12 nm and a strain of 4% were found in the leafy structure of CuO. Raman studies further supported the presence of nanosized CuO phase. This is the first instance of utilizing CuO NPs to detect 5 ppm of NO₂ even at a low operating temperature of 50 °C. The highest sensitivity for NO₂ was observed at 150 °C, for the first time, in CuO NPs. A low activation energy of 0.18 eV was found for sensing process. The CuO NPs sensor responded to NO₂ within a few seconds and recovered totally under a minute. The kinetics of the NO₂ gas adsorption on the CuO film surface was described following the Elovich model.     

Wide range humidity sensing of LiCl incorporated in mesoporous silica circular discs

Lithium chloride (LiCl) incorporated MCM-41 has been synthesised by sol-gel method using tetraethyl orthosilicate as a precursor in basic medium. 5, 10, 15, 20, 25, 30 and 35 wt% of LiCl were incorporated in mesoporous silica to investigate the humidity sensing. With increasing wt% of LiCl broadening of O–H peak is observed in the Fourier Transform Infrared spectra, indicating greater adsorption of hydroxyl groups on porous silica. The surface area of the MCM-41 circular discs was determined by Brunauer?Emmett?Teller (BET). Scanning electron microscopy images suggest that incorporation of LiCl leads to coalescence of grains in mesoporous silica. 25 wt% LiCl incorporated MCM-41 showed a wide range linear response of impedance change for 11%–90% RH exhibiting 3.5-order drop in impedance at a 1 kHz frequency. The Nyquist plots for all compositions showed increased ionic conduction with increasing relative humidity.     

Remote sensing of atmospheric duct parameters using simulated annealing

Simulated annealing is one of the robust optimization schemes. Simulated annealing mimics the annealing process of the slow cooling of a heated metal to reach a stable minimum energy state. In this paper, we adopt simulated annealing to study the problem of the remote sensing of atmospheric duct parameters for two different geometries of propagation measurement. One is from a single emitter to an array of radio receivers (vertical measurements), and the other is from the radar clutter returns (horizontal measurements). Basic principles of simulated annealing and its applications to refractivity estimation are introduced. The performance of this method is validated using numerical experiments and field measurements collected at the East China Sea. The retrieved results demonstrate the feasibility of simulated annealing for near real-time atmospheric refractivity estimation. For comparison, the retrievals of the genetic algorithm are also presented. The comparisons indicate that the convergence speed of simulated annealing is faster than that of the genetic algorithm, while the anti-noise ability of the genetic algorithm is better than that of simulated annealing.     

Ultra-longer fiber cantilever taper for simultaneous measurement of temperature and relative humidity

An ultra-longer fiber cantilever taper for simultaneous measurement of the temperature and relative humidity (RH) with high sensitivities was proposed. The structure was fabricated by using the simple and cost-effective method only including fiber cleaving, splicing, and tapering. The length of the cantilever taper is about 1.5 mm. The dip A and dip B were measured simultaneously, owing to the ultra-long length and super-fine size, the temperature sensitivities of the dip A and dip B reached as high as 127.3 pm/℃ and 0 pm/℃ between 25 ℃ and 50 ℃, and the RH sensitivities are -31.2 pm/% RH and -29.2 pm/% RH with a broad RH interval ranging from 20% RH to 70% RH. Besides, the proposed structure showed good linearity in the sensing process and small temperature crosstalk. It will be found in wide applications in environmental monitoring, food processing, and industries.     

Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

The influence of the hydrogen annealing treatment on the reliability of Ti/HfO_x /Pt capacitors is investigated by analyzing bias temperature instability (BTI). As compared to the N₂‐annealed sample, in the case of hydrogen‐annealed samples, both the set/reset voltages and currents are reduced from 6.5 V/–1.6 V to 3.8 V/–1.2 V and from 4 mA/170 nA to 800 µA/30 nA at 0.1 V, respectively. Of particular interest is the dramatic reduction in the set voltage variation from 3.3 V to 1.8 V. In addition, in BTI experiments, the current shift at the high resistance state (HRS) is reduced from 1.5 µA to 40 nA under a bias stress of –1 V/1000 s and from 40 µA to 0.5 µA under a temperature stress of 120 °C/1000 s. These results show that the hydrogen annealing treatment is very effective in improving the reliability of RRAM cells because it reduces the leakage current under bias temperature stress. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)