溶胶-凝胶法制备Ni_xZn_(1-x)S薄膜的磁性分析

由于离子掺杂可有效改善ZnS薄膜的特性,故本研究以溶胶-凝胶法制备Ni_xZn_(1-x)S薄膜(x=0.00,0.05,0.10,0.15),并利用XRD、PL光谱及磁性测试仪分析Ni掺杂对其磁性的影响.研究结果表明Ni掺杂量x为0.00、0.05、0.10及0.15时薄膜的饱和磁化强度随分别为6.59×10~(-6)emu/cm~3、4.61×10~(-6)emu/cm~3、3.88×10~(-6)emu/cm~3及3.52×10~(-6)emu/cm~3,即饱和磁化强度随x增加而减小.PL分析表明缺陷发光强度随x增加而减弱,能隙发光强度则随之增强,结合束缚极化子理论便知饱和磁化强度会随x增加而减小.XRD分析表示结晶品质随x增加而变好,说明薄膜中的缺陷数量会随x增加而减少,使得磁信号无法通过缺陷方式传导而导致其磁性减弱.     

溶胶-凝胶法制备Ni_xZn_(1-x)S薄膜的磁性分析

由于离子掺杂可有效改善ZnS薄膜的特性,故本研究以溶胶-凝胶法制备Ni_xZn_(1-x)S薄膜(x=0.00,0.05,0.10,0.15),并利用XRD、PL光谱及磁性测试仪分析Ni掺杂对其磁性的影响.研究结果表明Ni掺杂量x为0.00、0.05、0.10及0.15时薄膜的饱和磁化强度随分别为6.59×10~(-6)emu/cm~3、4.61×10~(-6)emu/cm~3、3.88×10~(-6)emu/cm~3及3.52×10~(-6)emu/cm~3,即饱和磁化强度随x增加而减小.PL分析表明缺陷发光强度随x增加而减弱,能隙发光强度则随之增强,结合束缚极化子理论便知饱和磁化强度会随x增加而减小.XRD分析表示结晶品质随x增加而变好,说明薄膜中的缺陷数量会随x增加而减少,使得磁信号无法通过缺陷方式传导而导致其磁性减弱.     

强磁场下Sm-Fe薄膜不同晶态组织演化及磁性能调控

针对Sm-Fe薄膜的不同晶态组织演化和磁性能调控问题,采用分子束气相沉积方法制备Sm-Fe薄膜时,通过改变Sm含量、膜厚和强磁场来调节薄膜的晶态和磁性能.结果表明,Sm含量可以调节Sm-Fe薄膜的晶态组织演化,而晶态组织的演化和强磁场对磁性能有显著影响.Sm-Fe薄膜在Sm原子比为5.8%时是体心立方晶态组织,在Sm含量为33.0%时为非晶态组织,而膜厚和强磁场不会影响薄膜的晶态组织.非晶态薄膜的表面粗糙度和表面颗粒尺寸都比晶态薄膜的小,施加6 T强磁场会使表面颗粒尺寸增大,而表面粗糙度降低.非晶态薄膜的饱和磁化强度M_s比晶态薄膜的M_s(1466 emu/cm~3,1 emu/cm~3=4π×10-10T)低约47.6%,施加6 T强磁场使非晶态和晶态薄膜的M_s均降低约50%.Sm-Fe薄膜的矫顽力H_c在6—130 Oe(1 Oe=103/(4π)A/m)之间,其中,非晶态薄膜的H_c比晶态薄膜的H_c大.施加6 T强磁场使晶态薄膜的H_c增大,而使非晶态薄膜的H_c减小,最高可以减少95%.结果表明含量和强磁场可以用于调控Sm-Fe薄膜的晶态和磁性能.     

用水热法合成掺杂Pr~(3+)的NiPr_xFe_(2-x)O_4纳米颗粒及其表征

采用水热法制备了掺杂Pr3+的NiPrx Fe2-x O4(x=0.0,0.01,0.025,0.05,0.075,0.1,0.15)纳米颗粒.实验结果表明制备的样品是立方体结构的纳米颗粒,当掺杂量为0x≤0.1时Pr3+能成功掺杂到NiFe2O4尖晶石晶格内,但掺杂量x0.1(x=0.15)时会出现杂峰.随着掺杂量从0增加到0.1,样品的平均晶粒尺寸从47nm减小到18nm,饱和磁化强度从55A·m2/kg单调减小至37A·m2/kg,矫顽力从4.7×103 A/m减小到3.4×103 A/m.饱和磁化强度减少的原因主要是由于室温下无磁性的Pr3+代替NiFe2O4中的Fe3+造成的.     

Ti1－xCoxO2铁磁性半导体薄膜研究

利用射频磁控反应溅射制备了Ti1-xCoxO2薄膜样品.超导量子干涉仪(SQUID)测量了样品在常温，低温下的磁特性.结果显示样品在常温下已经具有明显的铁磁性.常温时其矫顽力32×103A/m,饱和磁化强度55emu／cm3磁性元素的磁矩达0679μB／Co.饱和场12×104A/m.x射线衍射(XRD)和x射线光电子能谱(XPS)实验分析初步表明样品中没有钴颗粒. 关键词： 铁磁半导体 TiO2 薄膜     

稀土元素La掺杂BaFe12O19微结构和磁性能的研究术

用固相法制备了镧掺杂M型钡铁氧体（Ba1--xLaxFel2O19,x=0．0-0．6）,针对不同取代量与不同温度的烧结,研究取代量和温度对钡铁氧体微结构和磁性能的影响．在烧结温度为1100-1175℃,当X=0．0-0．6时,样品主要有单一的六角M型钡铁氧体相构成．SEM表明,La离子的加入不会影响钡铁氧体微观形貌．在磁性能方面,随着La离子的增加,钡铁氧体的饱和磁化强度先增加后减小,矫顽力逐渐增加．在同一取代量下,钡铁氧体的饱和磁化强度随烧结温度升高呈现上升趋势,矫顽力随着烧结温度的升高而降低．饱和磁化强度在x=0．2,烧结温度1175℃时达到最大值62．8emu／g,矫顽力在x=0．6,烧结温度1125℃时达到最大值3911．5Oe．     

Fe、Ni共掺杂ZnO基稀磁半导体光学性能与铁磁性研究

采用水热法成功制备了不同掺杂浓度的Zn1-2x Fe x Ni x O(x=0,0.025,0.05,0.1)稀磁半导体材料,利用X射线衍射(XRD)、透射电子显微镜(TEM)和X射线能量色散分析仪(XEDS)对样品进行表征,并结合拉曼(Raman)光谱、光致发光光谱(PL)和振动样品磁强计(VSM)研究样品的光学性能和磁学性能。结果表明,水热法制备的样品具有结晶性良好的纤锌矿结构,没有杂峰出现,形貌为纳米棒状结构,分散性良好。Fe2+、Ni2+是以替代的形式进入ZnO晶格中,Fe和Ni的掺杂使得晶体中的缺陷和应力增加,拉曼光谱峰位发生红移,光致发光光谱发生猝灭现象。另外,共掺杂样品在室温条件下存在明显的铁磁性,饱和磁化强度随着掺杂量的增加而增强。     

MnBiAl薄膜的磁光及磁性能研究

用真空电子束蒸发制备了MnBi_xAl_0.15薄膜.当0.4≤x≤0.7时,MnBi_xAl_0.15薄膜的Kerr角与MnBi_x薄膜相比有显著增大;而当x＞0.7时,MnBi_xAl_0.15的Kerr角则比MnBi_x的要不,633nm波长测量时,MnBi_{0.5Al0.15的Kerr角为2.75°,而相对应的MnBi0.5薄膜只有1.56°.MnBi05Al0.15薄膜的室温饱和磁化强度Ms为3×10⁵A/m,比MnBi0.5薄膜的Ms(4×10⁵A/m)要小.推测当0.4≤x≤0.7时,Al可能部分占据Bi空位和部分取代Mn位,由于晶格收缩使得Mn 3d电子与Bi 6p电子的杂化概率增大,从而导致其Kerr效应增强. 关键词：}     

N掺杂SiO2纳米薄膜的制备及其磁性

利用射频磁控反应溅射技术,制备了氮掺杂的SiO₂纳米薄膜.发现N掺杂SiO₂体系纳米薄膜具有铁磁性.较小的氮化硅颗粒均匀分布在氧化硅基质中有利于磁有序的形成.基底温度为400℃时,样品薄膜具有最大的饱和磁化强度和矫顽力,分别为35 emu/cm³和75 Oe.薄膜的磁性可能产生于氮化硅和氧化硅的界面.理论计算表明,N掺杂SiO₂体系具有净自旋.同时,由氮化硅和氧化硅界面之间的电荷转移导致的轨道磁矩也会对样品的磁性有贡献 关键词： 2薄膜')" href="#">N掺杂SiO₂薄膜 射频磁控反应溅射 界面磁性 基底温度     

含痕量Pr~(3 )和Tb~(3 )的Y_2O_2S中Eu~(3 )发光的敏化

作者研究了在紫外(uv)和阴极射线(cr)激发下,共掺杂Pr~(3 )和/或Tb~(3 )的Y_2O_2S:Eu磷光体发光强度的提高。Pr~(3 )或Tb~(3 )的适当浓度为10~(-4)～10~(-3)原子％,在加速电压为10KV,电流密度为1μA/cm~2的激发条件下,亮度提高超过50％。在254nm光激发下仅提高10％。未掺杂Pr~(3 )或Tb~(3 )的Y_2O_2S:Eu~(3 )的阴极射线发光强度随束电压的增加而饱和,共掺杂了Pr~(3 )或Tb~(3 )的Y_2O_2S:Eu的阴极射线发光强度随束电压的升高而线性增加。对束电压依赖关系的这个差别可用下列假设来解释:Pr~(3 )或Tb~(3 )有效地俘获载流子,以致抑制了在能量漏损处载流子的消失效应,这种效应是引起发光强度饱和的原因。本文还讨论了用紫外激发敏化Eu~(3 )的电荷转移态而产生载流子的作用,这种作用可由Y_2O_2S:Eu陶瓷的光电导激发光谱来说明。     

Magnetic properties of ultrathin Ni films

The magnetic properties of Au/Ni/Si(100) films with Ni thicknesses of 8–200 Å are studied at T=77 K using a scanning magnetic microscope with a thin-film high-temperature dc SQUID. It is found that the Ni films, with an area of 0.6×0.6 mm, which are thicker than 26 Å have a single-domain structure with the magnetic moment oriented in the plane of the film and a saturation magnetization close to 0.17 MA/m. For films less than 26 Å thick, the magnetization of the film is found to drop sharply.     

Spinwave resonance in MBE grown iron films

Spinwave resonance (SWR) has been observed at 9.5 and 35 GHz on a number of single crystal iron films prepared by the molecular beam epitaxy technique. The external magnetic field is applied both normal to and in the plane of the films. The deduced exchange stiffness constant A is (1.91±0.10)×10^-6 erg/cm. The SWR data is interpreted in terms of a non-uniform distribution of the magnetization near the film surface.     

过渡金属与F共掺杂ZnO薄膜结构及磁、光特性

采用溶胶-凝胶法在玻璃衬底上制备了过渡金属元素与F共掺杂Zn_0.98-xTM_xF_0.02O (TM_x=Cu_0.02, Ni_0.01, Mn_0.05, Fe_0.02, Co_0.05)薄膜, 进而利用X射线衍射仪、扫描电子显微镜、紫外-可见透过谱、光致发光及振动样品磁强计等研究了薄膜的表面形貌、微结构、禁带宽度及光致发光(PL)和室温磁学特性. 研究表明: 掺杂离子都以替位的方式进入了ZnO晶格, 掺杂不会破坏ZnO的纤锌矿结构. 其中Zn_0.93Co_0.05F_0.02O薄膜样品的颗粒尺寸最大, 薄膜的结晶度最好且c轴择优取向明显; Zn_0.93Mn_0.05F_0.02O薄膜样品的颗粒尺寸最小, 薄膜结晶度最差且无明显的c轴择优取; Cu, Ni, Fe与F共掺杂样品的颗粒尺寸大小几乎相同. TM掺杂样品均表现出很高的透过率, 同时掺杂后的薄膜样品的禁带宽度都有不同程度的红移. PL谱观察到Zn_0.98-xTM_xF_0.02O薄膜的发射峰主要由较强的紫外发射峰和较弱的蓝光发射峰组成. Zn_0.93Mn_0.05F_0.02O薄膜样品的紫外发光峰最弱, 蓝光发射最强, 饱和磁化强度最大; 与之相反的是Zn_0.96Cu_0.02F_0.02O薄膜, 其紫外发光峰最强, 蓝光发射最弱, 饱和磁化强度最小. 结合微结构和光学性质对Zn_0.98-xTM_xF_0.02O薄膜的磁学性质进行了讨论.     

水热法掺杂的Yb^3＋对NiYbxFe2-xO4铁氧体磁性和形貌的影响

本文以研究稀土元素镱掺杂对镍铁氧体磁性能的影响用为目的,采用水热法,去离子水作为溶剂,用硝酸镍（Ni（NO3）2·6H2O）,硝酸铁（Fe（NO）3·9H2O）,硝酸镱Yb（NO3）3·5H2O,氢氧化钠（NaOH）为原料,制备出镍铁氧体NiYbxFe2-xO4纳米粉体.利用X射线衍射（XRD）,X射线能谱仪（EDS）,扫描电镜（SEM）,透射电子显微镜（TEM）,振动样品磁强计（VSM）在成分,定性定量和形貌等方面进行了表征.结果表明,稀土元素镱掺杂将会降低镍铁氧体纳米粉体的晶粒尺寸.稀土离子磁矩的磁稀释作用导致镍铁氧体纳米磁性材料的饱和磁化强度降低,并且随着掺杂量的逐渐增加,样品的饱和磁化强度和矫顽力逐渐降低.     

Cu对Ni50Mn36In14相变和磁性的影响

文章研究了Cu替代部分Ni对铁磁性形状记忆合金Ni₅₀Mn₃₆In₁₄相变和磁性的影响规律. 研究表明,在Ni_50-xCu_xMn₃₆In₁₄中,随着Cu含量的增加,相变温度逐渐降低. Cu含量低于5%时,奥氏体的磁性强于马氏体的磁性, 母相和马氏体相的饱和磁化强度的差值ΔM随着Cu含量的增加而增大. 当Cu含量x=4.5时, ΔM迅速增加到80 emu/g, 并在该材料中观察到了磁场驱动的马氏体到奥氏体的转变,显示了该材料作为磁驱动磁电阻材料的潜在应用前景.当Cu含量高于5%时,奥氏体保持铁磁状态, 马氏体相由反铁磁状态变为铁磁状态,马氏体的磁性强于奥氏体的磁性, ΔM大大削弱,磁场驱动性质消失.     

Synthesis and characterization of Ni-doped ZnO: A transparent magnetic semiconductor

We report synthesis of a transparent magnetic semiconductor by incorporating Ni in zinc oxide (ZnO) matrix. ZnO and nickel-doped zinc oxide (ZnO:Ni) thin films (∼60 nm) are prepared by fast atom beam (FAB) sputtering. Both undoped and doped films show the presence of ZnO phase only. The Ni concentration (in at%) as determined by energy dispersive X-ray (EDX) technique is ∼12±2%. Magnetisation measurement using a SQUID magnetometer shows that the Ni-doped films are ferromagnetic, having coercivity (H_c) values 192, 310 and 100 Oe and saturation magnetization (M_s) values of 6.22, 5.32 and 4.73 emu/g at 5, 15 and 300 K, respectively. The Ni-doped film is transparent (>80%) across visible wavelength range. Resistivity of the ZnO:Ni film is ∼2.5×10⁻³ Ω cm, which is almost two orders of magnitude lower than the resistivity (∼4.5×10⁻¹ Ω cm) of its undoped counterpart. Impurity d-band splitting is considered to be the cause of increase in conductivity. Interaction between free charges generated by doping and localized d spins of Ni is discussed as the reason for ferromagnetism in the ZnO:Ni film.     

Observation of ferromagnetism and anomalous Hall effect in laser-deposited chromium-doped indium tin oxide films

We report on the structural, magnetic, and magnetotransport characteristics of Cr-doped indium tin oxide (ITO) films grown on SiO₂/Si substrates by pulsed laser deposition. Structural analysis clearly indicates that homogeneous films of bixbyite structure are grown without any detectable formation of secondary phases up to 20 mol% Cr doping. The carrier concentration is found to decrease with Cr ion addition, displaying a change in the conduction type from n-type to p-type around 15 mol% Cr doping. Room temperature ferromagnetism is observed, with saturation magnetization of ∼0.7 emu/cm³, remnant magnetization of ∼0.2 emu/cm³ and coercive field of ∼30 Oe for 5 mol% Cr-doped ITO. Magnetotransport measurements reveal the unique feature of diluted magnetic semiconductors, in particular, an anomalous Hall effect governed by electron doping, which indicates the intrinsic nature of ferromagnetism in Cr-doped ITO. These results suggest that Cr-doped ITO could be promising for semiconductor spin electronics devices.     

Microwave-induced combustion synthesis of Ni–Zn ferrite powder and its characterization

Ni–Zn ferrite powders were successfully synthesized by microwave-induced combustion process. The process takes only a few minutes to obtain calcined Ni–Zn ferrite powders. The resultant powders were investigated by XRD, SEM, VSM, TG/DTA and surface area measurements. The as-received product shows the formation of cubic ferrite with saturation magnetization (M_s)≈23 emu/g, whereas upon annealing at 850°C for 4 h, the saturation magnetization (M_s) increased to ≈52 emu/g.