Smoothing of Doppler spectra line shapes in electrophoretic analysis of biological cell suspensions

The study of cell and particle electrophoresis by laser Doppler techniques requires the application of an electric field to a conducting solution. Steady d.c. electric fields are usually not possible because of electrode surface reactions. Hence, it has been common practice to apply temporally varying electric fields, either pulses of alternating polarity or square-wave fields of constant amplitude. Oscillating particle motion leads to harmonic structure (multiples of the square-wave electric field frequency) in the scattered light spectra. This harmonic structure may be considerably smoothed by a suitable variation of the period of the applied square-wave field. The application of a pseudo-random period oscillating electric field yields line shapes that approach the line shapes to be expected from the application of a continuous d.c. electric field.     

Temperature behavior of Franz-Keldysh oscillation and evaluation of interface electric fields attributed to strain effect of InAs/GaAs quantum dot

In this work, the electric field-induced Franz-Keldysh effect was used to investigate the localized electric fields in GaAs interfaces attributed to strain effect of InAs/GaAs quantum dots (QD). The electric fields were investigated by photoreflectance spectroscopy (PR). PR spectra of the InAs/GaAs QDs showed complex Franz-Keldysh oscillations (FKOs) with various temperatures. It is suggested that the FKOs originated from the interface electric fields predominately caused by the strain-induced polarization at GaAs interface near the InAs QDs. The InAs/GaAs QDs have a broad range of interface electric fields from ～10⁴ V/cm to ～2х10⁵ V/cm. Temperature behavior of FKO amplitude distribution is explained by temperature dependent carrier confinement effect.     

Analysis of reflectance and modulation spectroscopic lineshapes in optoelectronic device structures

We discuss the spectral lineshapes of reflectance and modulated reflectance (MR) measurements on optoelectronic device structures such as epi-layers, quantum wells (QWs), vertical-cavity surface emitting-lasers (VCSELs) and resonant-cavity light-emitting diodes (RCLEDs). We consider the various methods for the extraction of built-in electric fields and band-gap energies from Franz-Keldysh oscillations (FKO), using the example of a tensilely strained InGaAs QW system, whose InGaAsP barriers yield strong FKO. We describe how critical point transition energies can be easily obtained by eye from Kramers-Kronig (KK) transforms of low field or QW modulation spectra, using the example of the modulated transmittance spectra of dilute-nitrogen InGaAsN p-i-n structures. We also discuss how the ordinary reflectivity spectrum, usually acquired at the same time as the MR signal, may also be exploited to extract layer thicknesses and compositions, and information about the active QW absorption spectrum in VCSEL and RCLED structures.     

Photoreflectance study at the micrometer scale

Photoreflectance (PR) spectroscopy has proven to be a very efficient non-destructive tool to get information on various semiconducting epitaxial structures as it is very sensitive to every direct optical transitions in semiconducting quantum structures and allows as well to optically measure internal electric fields in space charge layers, through Franz-Keldysh oscillation (FKO) analysis. We have developed an experimental setup to get micro-PR spectra on epitaxial structures or devices on a few micrometer size spots. Due to very low signal intensity, experimental conditions have to be very carefully controlled: the signal/noise ratio strongly depends on the pump-probe power ratio.We give experimental micro-PR results recorded on antimonide-based heterojunction bipolar transistors (HBTs), which give the local electric field at the emitter-base junction under different biasing conditions. A second part of the paper is devoted to micro-PR analysis performed on tuneable vertical cavity surface emitting layers (VCSELs) with InP/air Bragg mirrors. In such VCSELs, both the cavity Fabry-Perot peak and the active region quantum well ground state are giving transitions in the micro-PR spectrum. This is very useful in the case of a tuneable structure. Feasibility of micro-PR analysis at the device scale is demonstrated.     

Electromodulation spectroscopy of confined systems

The convolution formalism of Aspnes and Rowe for the dielectric function in the presence of an electric field is applied to electromodulation spectroscopy of confined systems. It is shown that for isolated confined systems where excitonic effects are not important, electromodulation spectroscopy leads to first derivative like optical features of two dimensional critical points. For superlattices in weak fields (neglecting excitonic interactions), the familiar third derivative forms of Aspnes and Rowe are applicable. In contrast, when moderate and high electric fields are applied to superlattices, electromodulation spectroscopy will exhibit optical features characteristic of first derivative line shapes. This phenomenon arises because the electric field causes the envelope functions of the electron and hole states to become spatially localized. The importance of excitons and their inhomogeneous broadening to the experimentally observed line shapes are considered.     

二维Ti_2CO_2单层吸附H_2S分子的第一性原理研究

采用第一性原理计算方法研究了H_2S分子在二维单层Ti_2CO_2表面上的吸附以及外加应变和电场对其性质的调制,发现该吸附为物理吸附,其吸附强度几乎不受外加拉伸应变的影响,而外加电场使H_2S分子的吸附增强.同时,通过单层Ti_2CO_2表面不同结构(如水分子修饰、官能团掺杂、氧官能团空位)对H_2S分子吸附性质影响的研究表明:(1)表面吸附的水分子促进H_2S分子的吸附,其吸附强度随H_2O分子数增多而增强;(2)官能团OH掺杂浓度低于0.22 ML时,促进H_2S分子的吸附,而较高浓度OH掺杂使H_2S分子吸附减弱;官能团F掺杂对H_2S分子吸附强度几乎没有影响;(3)含氧空位的Ti_2CO_2表面与H_2S分子相互作用较强,吸附能高达-1.06 eV,且电子结构改变明显.     

Calculation of electric and magnetic induced fields in humans subjected to electric power lines

In this work, analysis of the human body exposed to high voltage electric and magnetic fields is presented. The distribution of the electric field is obtained by using Laplace's equation. This relates the surface charge induced on the body to the potential in a reciprocal Laplace problem, which is then calculated by charge simulation method coupled with genetic algorithms to determine the appropriate arrangement of simulating charges inside the human body. The magnetic field intensity along the vertical center line of the human is calculated. Exposure to external electric and magnetic fields at power frequency induces electric field, magnetic field and currents inside the human body. The presented model for simulating electric and magnetic fields are a three dimensional field problem and introduced different types of charges to simulate the different elementary geometrical shapes of human body. The particular strength of the charge simulation method in this application is its ability to allow a detailed representation of the shape and posture of the human body. The results have been assessed through comparison induced current, electric field, magnetic field and there distribution over the body surface, as estimated in other experimental and computational work.     

均匀带电平面折线在空间产生的电场及其可视化

推导了均匀带电线段在二维平面中产生的电势的简要公式,进而推导了在三维直角坐标系中的电势公式,形成了带电折线(包括任意多边形)的电势简要公式.根据电势与电场强度之间的关系,列出了场强的表达式.将公式无量纲化,利用MATLAB指令,绘制了各种形状的带电多边形和折线的等势面和三维电场线,并显示了电场在空间的分布规律.     

(Ga,Mn)As光调制反射光谱

室温下我们研究了稀磁半导体(Ga,Mn)As的光调制反射(PR)光谱,观测到来自样品的Franz-Keldysh振荡(FKO)信号。随着Mn原子浓度的增加,PR线形展宽,但是临界点E₀和E₀+Δ₀没有明显的移动。根据FKO振荡数据,计算得到样品表面电场强度随Mn原子掺杂浓度的增加而增强。测量到与Mn原子掺杂相关的杂质带,其能量位置离GaAs价带边~100 meV。根据样品的表面电场强度和表面耗尽层模型,估算样品的空穴浓度为~10¹⁷cm^-3,较低的空穴浓度可能与样品具有较低的居里温度有关,或测量的PR信号来自于样品中外延层的部分耗尽区域。     

Electric field effect on the electronic properties of double-walled carbon-doped boron-nitride nanotubes

Carbon (C) doped zigzag (8, 0)@(16, 0) and armchair (5, 5)@(10, 10) double-walled boron-nitride nanotubes (DWBNNTs), under the influence of external electric fields applied in different directions are studied through first-principles calculations. We have considered the substitution of a B and a N (one species at each wall—inner or outer) by C atoms, generating a type-n inside a type-p semiconductor ((type-n)@(type-p)) and vice-versa. The resulting doped DWBNNT can be thought as a p–n junction. The obtained formation energies and structural properties results indicate that these structures present good stability and are not affected by the electric field application. For the electronic structure, it was observed that external fields can be used to modulate these systems energy gaps. Also, there is a preferred field direction which minimizes the gap values, and the gap increase or decrease is related to the reverse and direct polarization of the p–n junction, respectively.     

Density functional theory calculations of the metal-doped carbon nanostructures as hydrogen storage systems under electric fields: A review

This review covers structural, electronic, and hydrogen storage properties of carbon-based materials with doped metals under electric fields with different orientations and intensities, which are determined by density functional theory (DFT) simulations. The special application case is considered in investigating variations of electronic structures, binding, and hydrogen storage properties. External fields that are often met in practical applications lead to changes of the above properties.     

Electron spin resonance study of the spin dynamics in the impurity doped one-dimensional magnetic crystal (CH3)4NMnCl3:Cu2+

We have studied the spin dynamics in the one dimensional magnetic crystal, tetramethyl manganese trichloride (TMMC) doped with different concentrations of the Cu²⁺ ion, using electron spin resonance. We have observed the line widths to increase with Cu²⁺ impurity and the line shapes to deviate from the one-dimensional character.     

High resolution x-ray study of microstructural changes in semiconductors and insulators subject to high electric fields

Using a high-resolution X-ray diffractometer, microstructural changes have been observed in Si-, LiF- and CdS-crystals subject to high d.c. and a.c. fields. At high fields the diffraction peaks are unstable due to inhomogeneous distribution of the electric current in the specimen. The inhomogeneous regions have been directly observed in high-resolution topographs. A correlation between current fluctuations and the diffracted beam intensity has been observed. Changes in peak shapes as a result of field have been observed.     

Origin of spectral interferences in femtosecond stimulated Raman microscopy

In femtosecond stimulated Raman microscopy (FSRM), a spectrally narrow (Raman pump) pulse and a broad (Raman probe) laser pulse are employed to generate the Raman spectra of microscopic objects. The resulting spectra exhibit, in addition to the Raman bands, spectral modulations of comparable amplitude. Here a model is devised that attributes these modulations to a four‐wave mixing (FWM) process. Two light fields of the probe pulse and one field of the pump pulse serve as input fields. The resulting FWM field experiences a heterodyne amplification by the probe field. Simulations based on this model reproduce the appearance of the spectral modulations. Furthermore, the amplitude of the modulations exhibits dependences on the energies of pump and probe pulses as well as on the nonlinear refractive index n₂, which are in line with the model. Copyright © 2011 John Wiley & Sons, Ltd.     

Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces

Above-band-gap optical excitation of electron-hole pairs screens the doping-induced surface electric field and generates terahertz(THz) pulses via free-carrier transport. THz emission from a heavily doped silicon surface is much weaker than that of lightly doped samples. A polarity reversal of the THz electric field is observed in heavily doped p-type silicon, indicating that the doping related and carrier induced surface electric fields oppose each other. By comparing the penetration depth of the excitation laser with the thickness of the depletion layer for the doped silicon, it is shown that competition between diffusion and drift current causes the polarity reversal.     

6Li and 7li solid-state NMR spectroscopy of nitrogen ceramic phases

Two nitrogen ceramic phases, the oxynitride LiSiON and the nitride LiSi2N3, have been studied by 6Li and 7Li NMR. Magic angle spinning (MAS) NMR experiments have been carried out at two magnetic field strengths (7.05 and 14.1 T). The spectra give evidence of the relative effects of the quadrupolar and chemical shift interactions. The electric field gradient tensor of both phases has been determined accurately by iterative fitting of the 6Li and 7Li MAS NMR line shapes at the two magnetic field strengths. Due to the fact that for 7Li the quadrupolar interaction is much larger than the chemical shift interaction, it is shown that neither the small chemical shift anisotropy nor the relative orientation of the two interaction tensors can be determined accurately by 7Li MAS NMR. For 6Li, the two interactions are comparable and the value of these parameters obtained from the fits of the 6Li experimental MAS line shapes are therefore much more reliable.     

强外加电场与大调制度下光折变动力学光栅形成研究

强外加电场与大调制度在光折变效应的研究中已经得到了广泛应用。采用PDECOL算法,严格求解光折变带输运方程,得到外加电场时不同调制度下光折变晶体中随时间变化的空间电荷场、载流子浓度,并讨论了外加电场对它们的影响。通过将物质方程与耦合波方程联立数值求解,可得到光折变光栅形成过程中两波耦合增益系数以及光束条纹相位的变化。模拟结果表明,在强外加电场作用下,两束记录光之间的光强与相位耦合都得到了增强,而原有的解析式忽视了强外加电场与大调制度对空间电荷场相位耦合的影响,此时不再适用。同时发现折射率光栅与记录光束条纹均发生弯曲,并不再保持平行。     

Scattering polarization in the presence of magnetic and electric fields

The polarization of radiation by scattering on an atom embedded in combined external quadrupole electric and uniform magnetic fields is studied theoretically. Limiting cases of scattering under Zeeman effect, and Hanle effect in weak magnetic fields are discussed. The theory is general enough to handle scattering in intermediate magnetic fields (Hanle-Zeeman effect) and for arbitrary orientation of magnetic field. The quadrupolar electric field produces asymmetric line shifts, and causes interesting level-crossing phenomena either in the absence of an ambient magnetic field, or in its presence. It is shown that the quadrupolar electric field produces an additional depolarization in the Q/I profiles and rotation of the plane of polarization in the U/I profile over and above that arising from magnetic field itself. This characteristic may have a diagnostic potential to detect steady-state and time-varying electric fields that surround radiating atoms in solar atmospheric layers.     

Optical line shapes of one-dimensional excitions: influence of a heat bath with coloured noise

Optical absorption line shapes for Frenkel excitons moving on a linear chain are calculated. The model takes into account coherent nearest neighbour interaction and the influence of the phonons by a random modulation of the local excitation energies. The energy modulations are described by a stochastic process with coloured noise and exponentially decaying correlation functions. With increasing rate of the energy fluctuations the model describes a transition from static to dynamic disorder. The calculated optical absorption lines are asymmetric for slowly fluctuating energies and become symmetric and Lorentzian in shape for fast energy modulations.Dedicated to Prof. H.C. Wolf on the occasion of his 60th birthday     

Variational approach for the effects of periodic modulations on the spectrum of massless Dirac fermion

In the variational framework, we study the electronic energy spectrum of massless Dirac fermions of graphene subjected to one-dimensional oscillating magnetic and electrostatic fields centered around a constant uniform static magnetic field. We analyze the influence of the lateral periodic modulations in one direction, created by these oscillating electric and magnetic fields, on Dirac like Landau levels depending on amplitudes and periods of the field modulations. We compare our theoretical results with those found within the framework of non-degenerate perturbation theory. We found that the technique presented here yields energies lower than that obtained by the perturbation calculation, and thus gives more stable solutions for the electronic spectrum of massless Dirac fermion subjected to a magnetic field perpendicular to graphene layer under the influence of additional periodic potentials.