EFFECT OF SPACE CHARGE ON THE FREQUENCY OF OSCILLATION IN POSITIVE-GRID OSCILLATORS

In estimating the frequency of oscillation of a positive-grid oscillator, it isusually assumed that the space charge effect is negligible. Under this assumption, the potential distribution in the space between the plane-parallel electrodes is linear. Thus the electric field in the space is uniform and the average velocity of electrpn flight can be used to evaluate the frequency of oscillation. The presence of space charge affects the potential distribution in space so that the electric field in this region is no more constant. Hence more exact formula must be used to compute the frequency of oscillation. The calculation is further complicated by the fact that the anode potential is usually made slightly negative with respect to the cathode. In this case, the location of the virtual cathode at which the electrons turn back does not coincide with that if a straight line potential distribution were assumed. The predicated trequency of oscillation is about 10-20 percent lower than that if space charge were neglected.     

掺杂分子束外延GaAs薄膜表面和GaAs-GaAs界面的光反射调制谱

报道了用光反射调制谱(PR)测量掺杂分子束外延GaAs薄膜表面和界面电场的结果。分别用He-Ne激光和He-Cd激光作调制光,由于它们的穿透深度不同,可以有效地区分来自表面和界面的PR信号。由PR谱推算出薄膜表面和界面的电场。研究了薄膜干涉效应对调制光谱的影响,对界面电场的成因进行了分析和讨论。 关键词：     

SIN+ GaAs结构中的Franz-Keldysh振荡的傅里叶变换研究

利用傅里叶变换(FT)方法,对Franz-Keldysh振荡(FKO)的理论线性作了详细的数值模拟,并 用光调制反射谱(PR)测量了一组本征层(I层)厚度不同的表面-本征层-n型重掺杂层(SIN⁺)结构的GaAs样品的FKO. PR谱的FT分析表明,一部分样品的FT谱,包括其实部、虚 部和模,与理论线性符合得比较好,由此求出轻空穴(LH)和重空穴(HH)的约化质量平方根之 比μ_l/μ_h对不同样品在0805—0816之间,同时也可以求出 关键词： Franz-Keldysh振荡 傅里叶变换 GaAs     

ANALYTICAL MODELING OF THE RECOMBINATION CURRENT IN THE BASE-EMITTER SPACE CHARGE REGION OF HETEROJUNCTION BIPOLAR TRANSISTORS

An analytical modeling of the recombination current in the base-emitter space charge region of heterojunction bipolar transistors is derived. The recombination rates as functions of distance in the space charge region are calculated for different hase doping concentrations. The relations between the space charge recombination current and the applied voltage have been determined.     

STUDIES OF THE FOCUSING PROPERTIES OF A SPACE CHARGE LENS

A space charge lens has been designed and tested which can be used to focus intense ion beams at several tens of keV. The experimental results obtained can be interpreted with a simplified physical model. The existence of a space charge field and its strong focusing properties are tested experimentally. And it is shown that the relaxation time for the formation of space charge field is much less than 10 μs under our experimental conditions, thus the lens can be used to focus pulsed beams with length of several hundereds of μs of longer.     

DERIVATION OF THE LEHNERT FIELD EQUATIONS FROM GAUGE THEORY IN VACUUM: SPACE CHARGE AND CURRENT

It is shown that the Lehnert field equations in vacuum, with concomitant space charge and current, can be derived straightforwardly from standard gauge theory applied in vacuum, using the concept of covariant derivative and Feynman's universal influence. The Lehnert and Proca field equations are shown to be inter-related through the well-known de Broglie theorem, in which the photon mass can be interpreted as finite. These ideas go some way towards addressing the inconsistency inherent in Maxwell's famous displacement current, which has no concomitant vacuum space charge.     

主客体掺杂型非线性光学聚合物驻极体 DR1/PMMA膜中空间和偶极 电荷的相互作用特性

运用热刺激放电、表面电位衰减和电光效应的检测等手段,对主客体掺杂型非线性光学聚合物驻极体ＤＲ１／ＰＭＭＡ膜中空间和偶极电荷的相互作用特性进行了研究．结果表明,在极化后的样品中,被样品表面或体内的各类陷阱捕获的大部分空间电荷所处的陷阱能级高于极性生色团分子的定向排列产生的偶极电荷的束缚能级,空间电荷对偶极电荷有强烈的束缚作用．空间电荷衰减将导致材料内的电场分布发生变化,并引起极性生色团分子的松弛．空间电荷稳定性决定着偶极电荷的寿命     

主客体掺杂型非线性光学聚合物驻极体DR1/PMMA膜中空间和偶极电荷的相互作用特性

运用热刺激放电、表面电位衰减和电光效应的检测等手段,对主客体掺杂型非线性光学聚合物驻极体DR1/PMMA膜中空间和偶极电荷的相互作用特性进行了研究．结果表明,在极化后的样品中,被样品表面或体内的各类陷阱捕获的大部分空间电荷所处的陷阱能级高于极性生色团分子的定向排列产生的偶极电荷的束缚能级,空间电荷对偶极电荷有强烈的束缚作用．空间电荷衰减将导致材料内的电场分布发生变化,并引起极性生色团分子的松弛．空间电荷稳定性决定着偶极电荷的寿命. 关键词：     

GaAs(001)衬底上分子束外延生长立方和六方GaN薄膜

采用分子束外延方法在GaAs(001)衬底上生长出了03微米厚的GaN薄膜,X射线双晶衍射和室温光荧光测试结果表明,采用GaAs氮化表面作为成核层可获得高纯度立方GaN薄膜而采用AlAs氮化表面作为成核层可获得高纯度六方GaN薄膜.这一研究结果表明在GaAs衬底上生长GaN薄膜的相结构可以通过选择不同的成核层来控制. 关键词：     

THE INFLUENCE OF THE ZERO POINT OSCILLATION ON THE CHARGE TRANSFER IN THE HEAVYION DEEP INELASTIC COLLISIONS

We discuss the variance of the charge distribution in the heavy ion deep inelasticcollision on the basis of the Langevin equation. In order to explain the difference ofthe initial slope (early stage) of the charge distribution for the different reactionsystems and different bombarding energy, an initial condition of the charge drift inthe early stage of Dic is introduced. It is given by the harmonic or inhamonic motionaround the zero point and closely depends on the nuclear structure and incident energy.The difference of the inertial mass and stiffness parameter may be the one of thereason for the difference of charge transfer. In addition we also analyse the charac-terstic of the inertial mass parameter.     

透射式GaAs光电阴极AlGaAs/GaAs外延层倒易点二维图分析

本文介绍了摇摆曲线和倒易点二维图在评价晶格完整性时的特点,分析了透射式GaAs光电阴极样品AlGaAs/GaAs外延层的倒易点二维图,获得了晶面弯曲以及AlGaAs外延层中Al组份变化等方面的信息,为优化外延工艺提供了可靠的保证.     

分子束外延GaN薄膜的X射线光电子能谱和俄歇电子能谱研究

用XPS和AES电子能谱的方法对等离子体辅助分子束外延(MBE)生长的GaN薄膜进行了表面分析和深度剖析.发现红外分子束外延(RFMBE)生长的富镓GaN薄膜实际表面存在O和C吸附层,C主要为物理吸附,而O在GaN表面形成局域化学键产生氧络合物覆盖层,并形成一定的深度分布.杂质O在GaN带隙中导带底形成杂质带同时引入深受主能级,使得带隙变窄室温光吸收谱向低能方向移动,光致发光谱出现宽带发光峰.从而影响GaN薄膜的电学和光学性质 关键词： GaN薄膜 X射线光电子能谱 俄歇电子能谱 表面分析     

THE DESIGN AND STUDY OF SPACE CHARGE EFFECT FOR THE BPL 750keV BEAM TRANSPORT SYSTEM

The design of the BPL 750keV beam transport system and the study of beam space charge effect in this system are described. This system has been constructed and operated in December 1982. The beam-transfer efficiency of the quadrupole system reached 66.7%. The first buncher operated in 1983, and the beam bunching efficiency is about 60%.     

GaSb/AlSb/GaAs应变层结构的分子束外延生长

本文以反射式高能电子衍射(RHEED)和其强度振荡为监测手段,在半绝缘GaAs衬底上成功地生长GaSb/AlSb/GaAs应变层结构,RHEED图样表明,GaSb正常生长时为Sb稳定的C(2×6)结构,AlSb为稳定的(1×3)结构,作者观察并记录GaSb,AlSb生长时的RHEED强度振荡,并利用它成功地生长10个周期的GaSb/AlSb超晶格,透射电子显微镜照片显示界面平整、清晰,采用较厚的AlSb过渡层及适当的生长条件,可在半绝缘GaAs衬底上生长出质量好的GaSb外延层,其X射线双晶衍射半峰宽小于 关键词：     

聚乙烯咔唑/C60组合薄膜光诱导电荷转移性质研究

采用物理喷束淀积技术,制备了聚乙烯咔唑(PVK)与富勒烯C60的组合薄膜系列,通过测量这些组合膜和纯膜的稳态和瞬态光生电压,研究了组合膜光诱导电荷转移性质.发现P VK/C60双层组合膜的光生电压比纯PVK薄膜和PVK与C60均匀混合膜有5个数量级的增强,比纯C60薄膜也有大于一个数量级的增强.实验结果证明:在光激发下,组合膜中两种分子间发生了快速的电子转移,并在PVK/C60界面处产生有效的电荷分离,导致PVK/C60双层组合膜光生电压的显著增强.并通过与ITO/C60/Al结构的瞬态光生电压响应的比较,表明了高聚物与C60之间发生了更快的分子间的电荷转移过程.     

TWO-DIMENSIONAL NUMERICAL SIMULATION OF LOW FREQUENCY OSCILLATIONS OF SPACE CHARGE AND POTENTIAL IN THE GYROTRON ADIABATIC TRAP

The development of oscillations of the space charge and potential in the adiabatic trap of a gyrotron between the cathode and the cavity is studied numerically. The PIC method is applied, with the real two-dimensional distributions of the electric and magnetic fields taken into account. Secondary emission is included into the numerical model, as well as such factors as the electron beam space charge, thermal velocities of electrons, and emitter roughness. The value of the trapped space charge as a function of time is calculated. Time dependences of the potential in various cross-sections of the formation system are traced. The amplitudes of its variable component have been found and then the corresponding frequency spectra have been calculated. The process of cathode bombardment is investigated. The energy distribution and time dependence of the current in the electron beam coming to the operating space are found. Some ways to reduce the oscillations of the potential and the space charge are discussed.     

GaAs中非晶态与晶态界面晶格象的光衍射分析

我们利用光学衍射仪对离子注入后GaAs中晶态区与非晶态区界面的高分辨晶格象进行了分析。得到了界面附近结构变化的初步结果。由非晶态区到晶态区存在如下五个区域:非晶区;晶核与低维有序区;多晶区;单晶畸变区和单晶区。 关键词：     

软X射线多层膜及多层膜光栅的研究进展

对目前的几种软Ｘ射线光学元件的性能作了简要的阐述和分析。综合介绍了多层膜作为软Ｘ射线光学元件的新进展。同时对多层膜光栅这种新型软Ｘ射线光学元件的原理、性能、制作工艺进行了详细的说明。     

GaAs/SrTiO3外延半导体单晶薄膜带间跃迁研究

报道了在钙钛矿型结构的SrTiO₃衬底上用分子束外延方法生长闪锌矿型结构的GaAs半导体单晶薄膜.应用光调制反射光谱和光荧光方法 ,研究了GaAs半导体薄膜的带间跃迁,并与通常的GaAs体材料特性进行了对比研究.结果表明,在钙钛矿型结构SrTiO₃衬底上生长的GaAs单晶薄膜具有与单晶体材料相似的禁带与光学特性,在带间跃迁的弛豫上,外延薄膜相对体材料大了约5倍. 关键词：