High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap

A transient peak current as high as 5.6 kA is obtained by a GaAs photoconductive semiconductor switch （PCSS） in series with a spark gap. Based on the characteristics of the GaAs PCSS, mechanisms of discharge between the PCSS and the spark gap are discussed. It is implied that a hybrid operation mode of photo-activated charge domain occurs due to the superposition of the bias voltage and the instantaneous radio frequency voltage.     

50 kV半绝缘GaAs光导开关

 设计了横向结构的半绝缘GaAs光导开关,开关由600 μm厚的半绝缘GaAs晶片制成,电极间隙为20 mm。在不同的直流偏置电压下,使用波长为1 064 nm、能量为9.9 mJ的激光脉冲触发使开关导通,开关置于0.2 MPa的SF6气体环境中。在施加直流50 kV电压的情况下,使用Rogowski线圈测得开关的最大导通电流为1.1 kA。对实验结果进行分析表明：随着初始偏置电压的升高,回路流过的电荷与电容初始储存的电荷的比值不断提高,但都没有达到100%,即非线性模式下光导开关的关断原因并不是由于外电路的能量已经耗尽。对非本征光电导的情况,计算出开关的通态电阻为2.71 Ω。     

Four sided domains in hierarchical space dividing patterns

The cracks observed in the glaze of ceramics form networks, which divide the 2D plane into domains. It is shown that, on the average, the number of sides of these domains is four. This contrasts with the usual 2D space divisions observed in Voronoi tessellation or 2D soap froths. In the latter networks, the number of sides of a domain coincides with the number of its neighbors, which, according to Euler's theorem, has to be six on average. The four sided property observed in cracks is the result of a formation process which can be understood as the successive divisions of domains with no later reorganization. It is generic for all networks having such hierarchical construction rules. We introduce a "geometrical charge," analogous to Euler's topological charge, as the difference from four of the number of sides of a domain. It is preserved during the pattern formation of the crack pattern.     

GaAs与InP半导体光导开关特性实验研究

利用Ⅲ-Ⅴ族化合物半导体材料砷化镓(GaAs)和磷化铟(InP)及其掺杂材料制作的光导开关具有很好的时间响应及高功率输出特性.比较了这两种材料制作的不同电极间隙类型的光导开关的开关时间响应速度、导通光能与饱和触发激光能量、线性与非线性工作模式及触发稳定性等特性.结果表明,利用InP和GaAs两种材料制作的光导开关都具有达到皮秒级的超快时间响应,其对时间最佳响应与偏置电场有关.两种开关的多次触发时间抖动在几个皮秒范围,输出电压峰峰值抖动优于10%.GaAs开关的非线性工作电场阈值比InP开关低,更容易实现非线性输出.     

激光二极管触发的光导开关-磁开关串联型组合开关北大核心CSCD

研究了一种新型的基于硅光导开关和磁开关串联的组合开关,相比于传统的磁开关,该开关能将数十μs的充电脉冲直接压缩到数十ns。比较了采用激光二极管触发时组合开关与单一硅光导开关的性能,结果表明,组合开关输出电流提高,前沿及脉宽均大幅减小,组合开关可以降低硅光导开关对触发光功率的需求,从而使得采用激光二极管实现硅光导开关触发成为可能。     

光脉冲对光导开关非线性导通性能的影响

设计了异面结构的GaAs光导开关,开关厚度为0.6mm,电极间隙为3mm。利用半导体激光二极管对开关进行了触发实验。随着开关两端偏置电压不断升高,开关输出脉冲幅度线性增加,输出波形与光脉冲相似,当偏置电压超过一定阈值,开关输出脉冲幅度显著增强,输出脉冲前沿快于光脉冲,开关进入了非线性工作模式。开关进入非线性模式,除了与偏置电压有关外,还与触发光脉冲前沿、能量有关,实验发现触发光脉冲前沿越快,能量越高,开关越容易进入非线性工作模式,所需的偏置电压也越低,但当电压低至某一阈值时(实验中约6kV),即使增加触发光能,开关也无法进入非线性模式。     

高功率亚纳秒GaAs光电导开关的研究

报道了具有全固态绝缘结构的横向型半绝缘GaAs光电导开关的研制和性能测试结果.其中8mm电极间隙的GaAs开关暗态绝缘强度达28kV,分别用ns和ps激光脉冲触发开关的结果表明,开关输出电磁脉冲无晃动,电流脉冲上升时间小于200ps,脉宽达亚ns,3mm电极间隙的GaAs开关的峰值电流达560A,电磁脉冲重复率108Hz.给出不同电极间隙的GaAs开关工作于线性和lockon状态下的实验结果,测试了GaAs开关工作于lockon状态下的光能、电场阈值 关键词： 光电导开关 lockon效应 高功率超快电脉冲     

基于光导半导体的MHz高重频可调谐脉冲产生技术研究

随着微波光子学的发展,新型光导微波技术利用高重频脉冲簇激光,入射到线性光导半导体器件中产生可调谐高功率电磁脉冲的方式受到广泛关注。SiC光导半导体开关（PCSS）具有高击穿场强,高饱和载流子速率,高抗辐射能力,高热传导率和高温工作稳定性等优点,是产生高重频、高功率、超短脉冲的重要固态电子器件。介绍了一种基于钒补偿半绝缘4H-SiC PCSS的MHz重复频率亚纳秒脉冲发生器。该发生器采用1 MHz,1030 nm可调谐光脉冲宽度的激光簇驱动源,4H-SiC PCSS的厚度为0.8 mm。整系统可得到最大输出电功率176 kW、最小半高宽约为365 ps的MHz重频短脉冲。     

Symmetry locking and commensurate vortex domain formation in periodic pinning arrays

The spontaneous formation of domains of commensurate vortex patterns near rational fractional matching fields of a periodic pinning array has been investigated with high resolution scanning Hall probe microscopy. We show that domain formation is promoted due to the efficient incorporation of mismatched excess vortices and vacancies at the corners of domain walls, which outweighs the energetic cost of creating them. Molecular dynamics simulations with a generic pinning potential reveal that domains are formed only when vortex-vortex interactions are long range.     

Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width

We demonstrate that the transport of hot carriers may result in the phenomenon where an oscillated output current appears at the waveforms in a high-power photoconductive semiconductor switch(PCSS) working at long pulse width when the laser disappears or the electric field changes. The variational laser and electric field will affect the scattering rates of hot carriers and crystal lattice in high-power PCSS, and the drift velocity of hot carriers and also the on-state resistance will be changed. The present result is important for reducing the on-state resistance and improving the output characteristics of high-power Si/Ga As PCSS.     

2H NMR and polyelectrolyte-induced domains in lipid bilayers

2H NMR studies of polyelectrolyte-induced domain formation in lipid bilayer membranes are reviewed. The 2H NMR spectrum of choline-deuterated phosphatidylcholine (PC) reports on any and all sources of lipid bilayer surface charge, since these produce a conformation change in the choline head group of PC, manifest as a change in the 2H NMR quadrupolar splitting. In addition, homogeneous and inhomogeneous surface charge distributions are differentiated. Adding polyelectrolytes to lipid bilayers consisting of mixtures of oppositely charged and zwitterionic lipids produces 2H NMR spectra which are superpositions of two Pake sub-spectra: one corresponding to a polyelectrolyte-bound lipid population and the other to a polyelectrolyte-free lipid population. Quantitative analysis of the quadrupolar splittings and spectral intensities of the two sub-spectra indicate that the polyelectrolyte-bound populations is enriched with oppositely charged lipid, while the polyelectrolyte-free lipid population is correspondingly depleted. The same domain-segregation effect is produced whether cationic polyelectrolytes are added to anionic lipid bilayers or anionic polyelectrolytes are added to cationic lipid bilayers. The 2H NMR spectra permit a complete characterization of domain composition and size. The anion:cation ratio within the domains is always stoichiometric, as expected for a process driven by Coulombic interactions. The zwitterionic lipid content of the domains is always statistical, reflecting the systems tendency to minimize the entropic cost of demixing charged lipids into domains. Domain formation is observed even with rather short polyelectrolytes, suggesting that individual polyelectrolyte chains aggregate at the surface to form "superdomains". Overall, the polyelectrolyte bound at the lipid bilayer surface appears to lie flat along the surface and to be essentially immobilized through its multiple electrostatic contacts.     

Coherent dynamics of domain formation in the Bose ferromagnet

We present a theory to describe domain formation observed very recently in a quenched 87Rb gas, a typical ferromagnetic spinor Bose system. An overlap factor is introduced to characterize the symmetry breaking of MF=+/-1 components for the F=1 ferromagnetic condensate. We demonstrate that the domain formation is a coeffect of the quantum coherence and the thermal relaxation. A thermally enhanced quantum oscillation is observed during the dynamical process of the domain formation. And the spatial separation of domains leads to significant decay of the MF=0 component fraction in an initial MF=0 condensate.     

Self assembly modulated by interactions of two heterogeneously charged surfaces

Recent experiments have measured attractive interactions between two surfaces that each bear two molecular species with opposite charge. Such surfaces form charged domains of finite size. We present a theoretical model that predicts the dependence of the domain size, phase behavior and the interlayer forces as a function of spacing and salt concentration for two such interacting surfaces. A strong correlation between two length scales, the screening length and the surface separation, at the spinodal is shown. Remarkably, the first-order phase transition to infinite sized domains depends logarithmically on the ratio of the domain size to the molecular size. Finally, we fit the predicted pressure with experiments.     

Dynamic origin of stripe domains

We investigate stripe domain formation in nanometer sized Co bars. The magnetic equilibrium states and the magnetic spin wave frequencies are obtained from micromagnetic-like simulations. We find that the lowest frequency standing-wave mode has the same spatial structure as the stripe domains at remanence and it goes soft at the field where the stripe domains emerge. We show, therefore, that the final domain structure at remanence, which is not the configuration with lowest energy, is predicted from a high-field analysis of the frequencies of the standing spin waves.     

The role of Jahn–Teller ions in the creation of domain structures in lithium niobate

Using tightly focused laser beams, features of space charge fields (～107 V/m) are studied through the photoionization of doped Jahn–Teller Fe²⁺ ions in LiNbO₃ single crystals. These fields can be used for selective formation of the inverse domain state following the additional application of a field with a strength below the coercive field. The characteristics of laser-induced domains and periodic domain structures are studied by laser-acoustic means.     

光导开关非线性导通时的载流子累加效应

利用半导体激光器作为触发源,对砷化镓光导开关进行了实验研究,重点研究了载流子累加效应对开关输出特性的影响。实验结果表明,光导开关的导通机制与内部载流子数的多少直接相关,当开关中的载流子数积累到雪崩碰撞电离条件,开关就会发生非线性导通。采用低能量光脉冲序列触发光导开关,获得了高功率输出,降低了开关非线性导通时的触发光能和偏置电压,对于光导开关的应用具有重要意义。     

Kinetic approach for describing the fatigue effect in ferroelectrics

A new kinetic approach is proposed for explaining the fatigue effect in ferroelectrics. A self-consistent variation in the area and geometry of the switching region of a sample upon a cyclic switching accompanied by the formation and growth of kinetically frozen domains is considered. It is assumed that fatigue is due to self-organized formation of a spatially inhomogeneous internal bias field due to retardation of bulk screening of the depolarization field. Variations in the switching charge and in the amplitude of switching current, which are calculated with the help of computer simulation of domain kinetics upon cyclic switching, are in good agreement with experimental data obtained for thin lead zirconate-titanate (PZT) thin films.     

半绝缘GaAs光电导开关非线性电脉冲超快上升特性研究

利用流体模型对光生载流子的输运进行了模拟研究,结果表明载流子在输运过程中形成的光激发电荷畴是产生电脉冲超快上升特性的主要原因.对光激发电荷畴的形成和吸收过程的进一步研究表明：1)形成过程中的光激发电荷畴增强了电子的浓度梯度;2)光激发电荷畴在被阳极吸收的过程中,光电导开关偏置电压的快速下降能促进电流上升速度.光激发电荷畴的形成和吸收两大过程共同作用下,形成了电脉冲的超快上升特性. 关键词： 光电导开关 非线性模式 光激发电荷畴 上升时间     

高压超大电流光电导开关及其击穿特性研究

研制了耐压达32 kV,通态峰值电流达3.7 kA的高压超大电流半绝缘GaAs光电导开关.分析了光电导开关在强场下的击穿机理,指出对于间接能带间隙光导材料(如Si)制作的光电导开关,开关的击穿电压主要由陷阱填充限制电导模型决定.而对于直接能带间隙光导材料(如GaAs,InP等)制作的光电导开关,开关击穿主要是由开关体负阻效应在开关阳极产生的空间电荷累积所导致的开关阳极电场剧增引起的.基于转移电子效应对GaAs光电导开关击穿电压进行了理论计算,计算结果与实验相一致. 关键词： 光电导开关 击穿 转移电子效应 陷阱填充     

具有条纹磁畴结构的NiFe薄膜的制备与磁各向异性研究

具有条纹磁畴结构的磁性薄膜表现出面内转动磁各向异性,对于解决高频电子器件的方向性问题起着至关重要的作用.本文采用射频磁控溅射的方法,研究了NiFe薄膜的厚度、溅射功率密度、溅射气压等制备工艺参数对条纹磁畴结构、面内静态磁各向异性、面内转动磁各向异性、垂直磁各向异性的影响规律.研究发现,在功率密度15.6 W/cm~2与溅射气压2 mTorr(1 Torr=1.33322×102Pa)下生长的NiFe薄膜,表现出条纹磁畴的临界厚度在250 nm到300 nm之间.厚度为300 nm的薄膜比250 nm薄膜的垂直磁各向异性场增大近一倍,从而磁矩偏离膜面形成条纹磁畴结构,并表现出面内转动磁各向异性.高溅射功率密度可以降低薄膜出现条纹磁畴的临界厚度.在相同功率密度15.6 W/cm~2下生长300 nm的NiFe薄膜,随着溅射气压由2 mTorr增大到9 mTorr,NiFe薄膜的垂直磁各向异性场逐渐由1247.8 Oe(1 Oe=79.5775 A/m)增大到3248.0 Oe,面内转动磁各向异性场由72.5 Oe增大到141.9 Oe,条纹磁畴周期从0.53μm单调减小到0.24μm.NiFe薄膜的断面结构表明柱状晶的形成是表现出条纹磁畴结构的本质原因,高功率密度下低溅射气压有利于柱状晶结构的形成,表现出规整的条纹磁畴结构,高溅射气压会导致柱状晶纤细化,面内转动磁各向异性与面外垂直磁各向异性增强,条纹磁畴结构变得混乱.