The adsorption of nitric oxide on a silicon (100) 2 × 1 surface studied with Auger electron spectroscopy

We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a clean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurement reeveal well resolved fine structure at Auger SiL_2.3VV transitions at 62 and 83 eV. These peaks can be attributed to SiO and SiN bonds. Furthermore, it is argued that the broadening in the SiLi_2.3VV Auger transition at 83 eV at 300 K may be composed of two nearby peaks, which could be attributed to two different kinds of chemical bonding, SiN and SiO. The absence of a peak at 69 eV at room temperature strongly suggests the NO adsorption on a Si(100)2 × 1 surface to be molecular. Dissociation of NO on the Si(100)2 × 1 surface is observed at 550 K.     

Oxygen adsorption on Ge(111) surface: II. Alkali metal-covered surfaces

Oxygen adsorption on an alkali metal (a.m.)-covered Ge(111) surface has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (ELS), thermal desorption (TD), and work function measurements (WF). It was found that the presence of a.m. results in enhancement of the oxygen adsorption rate. The initial values of the sticking coefficient, S₀, are exponential functions of the work function changes caused by the a.m. adsorption. It was shown that no germanium oxide phases are formed on an alkali-covered Ge surface at 300 K. The oxidation rate at high temperatures is limited by the rearrangement processes taking place in the surface GeO layer. The results obtained show that the alkali metal perturbs the GeO bond to a certain extent but no alkali oxide formation was observed at a.m. covertages under investigation.     

Benzene adsorption on nickel (100) and (111) faces studied by leed and high resolution electron energy loss spectroscopy

Studies of benzene (C₆H₆ and C₆D₆) adsorption have been performed by high resolution electron energy loss spectroscopy (HRELS) and LEED experiments on nickel (100) and (111) single crystal faces at room temperature. Chemisorption induces ordered structures, c(4 × 4) on Ni(100) and (2√3 × 2√3)R30° on Ni(111), and typical energy loss spectra with 4 loss peaks accurately identified with the strongest infrared vibration bands of the gazeous molecules. Benzene chemisorption preserves the aromatic character of the molecule and involves respectively 8 nickel surface atoms on the (100) face and 12 on the (111) face by adsorbed molecule. The interaction takes place via the π electrons of the ring. Significant shifts of the CHτ bending and CH stretching vibrations show a weakening of the CH bonds due to the formation of the chemisorption bond and a coupling of H atoms with the nickel substrate.     

Auger electron spectroscopic study of CO2 adsorption on Zircaloy-4 surfaces

We investigate the adsorption of CO₂ onto Zircaloy-4 (Zry-4) surfaces at 150, 300 and 600 K using Auger electron spectroscopy (AES). Following CO₂ adsorption at 150 K the graphitic form of carbon is detected, whereas upon chemisorption at 300 and 600 K we detect the carbidic phase. As the adsorption temperature is increased, the carbon Auger signal increases, whereas the oxygen signal decreases. Adsorption at all three temperatures results in a shift of the Zr Auger features, indicating surface oxidation. The effect of adsorbed CO₂ on the Zr(MVV) and Zr(MNV) transitions depends on adsorption temperature and is less pronounced at higher temperatures. On the other hand, changes in the Zr(MNN) feature are similar for all three adsorption temperatures. The changes in the Zr Auger peak shapes and positions are attributed to oxygen from dissociated CO₂, with the differences observed at various temperatures indicative of the diffusion of oxygen into the subsurface region.     

Secondary ion and Auger electron emissions from Ar+-ion-sputtered FeAl alloys

Some FeAl alloys, and pure Al and Fe samples, are sputtered in ultrahigh vacuum with Ar⁺ ions between 4 and 15 keV. As previously observed with CuAl alloys, the intensity of the principal Al Auger peak at 63.5 eV is a parabolic function of the Al concentration. Symmetric collisions Al → Al are thus much more efficient for Auger emission from pure aluminium than asymmetric collisions Ar → Al, the proportion of which among effective collisions hardly reaches 20% at 15 keV. Whatever the initial ion energy, the intensities of singly charged atomic secondary ions Al⁺ and Fe⁺, normalized to pure metals, are equal to the atomic concentration of the corresponding elements, whereas the normalized intensities of the multiply charged ions Al²⁺ and Al³⁺ are roughly equal to the square of Al concentration. These results agree with the occurence of two mechanisms in intrinsic ion emission: an electronic excitation process during the separation of the outgoing particle from the target (singly charged ions) and a collisional process from the symmetric collisions Al → Al only, with multiple Auger de-excitation outside the target (multicharged ions of light elements).     

The adsorption of CO,O2, and H2 on Pt: II. Ultraviolet photoelectron spectroscopy studies

Ultraviolet photoelectron spectroscopy (UPS) has been used to study the chemisorption of CO, O₂, and H₂ on platinum. Three single crystal surfaces ((111), 6(111) × (100), and 6(111) × (111)) and two polycrystalline surfaces were studied. These studies yielded three important results. First, the most dominant change in the Pt valence band upon gas adsorption was a decrease in the height of the peak immediately below the Fermi level. This decrease was nearly identical for all three gases studied. Second, CO adsorption resulted in the formation of a resonance state ～8 eV below the Fermi level which was attributed to CO molecular orbitals. In contrast, no dominant resonance states were observed for adsorbed O or H. The lack of an O resonance state on platinum is in contrast to the results observed for O adsorbed on Fe and Ni and suggests important differences between the OPt chemisorption bond and the OFe and ONi chemisorption bonds. Finally, adsorption of CO at steps or defects led to a decrease in work function while its adsorption on terraces led to an increase in work function. For H, adsorption at steps led to an increase in work function while adsorption on terraces led to a decrease in work function. The adsorption of O led to an increase in work function on all of the surfaces studied.     

Mechanisms for oxygen adsorption on the Si(110) surface studied by Auger electron spectroscopy

Oxygen adsorption on the Si(110) surface has been studied by Auger electron spectroscopy. For a clean annealed surface chemisorption occurs, with an initial sticking probability of ～6 × 10^?3. In this case the oxygen o_kll signal saturates and no formation of SiO₂ can be detected from an analysis of the Si L_2,3VV lineshape. With electron impact on the surface during oxygen exposure much larger quantities are adsorbed with the formation of an SiO₂ surface layer. This increased reactivity towards oxygen is due to either a direct effect of the electron beam or to a combined action of the beam with residual CO during oxygen inlet, which creates reactive carbon centers on the surface. Thus in the presence of an electron beam on the surface separate exosures to CO showed adsorption of C and O. For this surface subsequent exposure in the absence of the electron beam resulted in additional oxygen adsorption and formation of SiO₂. No adsorption of CO could be detected without electron impact. The changes in surface chemistry with adsorption are detectable from the Si L_2,3VV Auger spectrum. Assignments can be made of two main features in the spectra, relating to surface and bulk contributions to the density of states in the valence band.     

The application of tailored modulation techniques to depth profiling with auger electron spectroscopy

Tailored modulation techniques (TMT) are applied to depth profiling to eliminate errors in signal strength measurements caused by Auger line shape changes. The application of TMT is illustrated by profiling through Al₂ O₃Al interfaces. When peak-to-peak heights in first derivative spectra $\text{n}$⁽¹⁾_m (E) are used for profiling, the measured Al KL_2,in3L_2,3 signal strength shows a large decrease near the interface. This artifact is reduced when peak heights in $\text{n}$_m (E) are used but can be eliminated only when Auger area values are used for profiling. The peak heights in $\text{n}$_m (E) and Auger area values can both be obtained in real time with TMT and plotted automatically with conventional multiplexing equipment. Some features of Auger spectra obtained using TMT are illustrated, and a comparison of depth profiles obtained using peak-to-peak heights in $\text{n}$¹_m (E), peak heights in $\text{n}$_m (E) and Auger area values demonstrates the usefulness of TMT in depth profiling.     

NH3 adsorption on Ni(110) and the production of the NH2 species by electron irradiation

The adsorption of NH₃ on Ni(110) has been examined using electron stimulated desorption ion angular distribution (ESDIAD), low energy electron diffraction (LEED) and thermal desorption spectrometry (TDS). At ～ 85 K the NH₃ molecule enters into a series of chemisorption and physisorption states whose structures have been partially characterized by means of ESDIAD and LEED. Upon heating, these NH₃ states desorb without dissociation; for adsorption below 300 K there is essentially no thermal decomposition. The ammonia adiayer was found to be extremely sensitive to electron irradiation effects. Evidence was found to support the irradiation induced conversion of NH₃(ads) to an amido intermediate, nh_2(ads). The NH₂ adsorbs with its C_2v axis normal to the surface and its NH bonds aligned along the [001] and [001?] directions. In the absence of further electron irradiation the nh_2(ads) species is stable to 375 K whereupon it dissociates to N_(ads)and H_2(g). The remaining N_(ads) desorbs near 750 K with significant attractive N…N interaction. No evidence is found for an imido intermediate, nh_(ads). nh_2(ads) also undergoes a disproportionation/recombination reaction upon heating to produce an additional NH₃ desorption state. A significant isotope effect for NH versus ND scission, sensitive to the adsorption state of the ammonia, is found to occur upon electron irradiation.     

The reactive adsorption of CCl4 on GaAs(100) surfaces at 300 K

Auger electron spectroscopy has been used to monitor the adsorption of CCl₄ on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 10¹⁴ and (2.0 ± 0.2) × 10¹⁴ cm ⁻² are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism.     

The nature of the adsorption bond between graphite islands and iridium surface

To reveal the nature of adsorption bonds between two-dimensional graphite islands and iridium (111) and (100) faces, a study has been made of the adsorption of potassium and cesium atoms on the surface of these systems, using thermal desorption and Auger electron spectroscopy, as well as surface ionization and thermionic emission techniques. The graphite islands are shown to be weakly bound to the iridium substrate by Van der Waals forces. The unsaturated valence bonds at the periphery of the graphite islands are “lowered down” on to the metal. The recess between the graphite layer and the metal is filled by adsorbing particles through defects in the graphite layer. The atoms can penetrate into the recess in two ways: at T > 1000 K directly from the flux incident on the surface, and at T < 1000 K also by migration from the graphite island surface. The adsorption capacity of this state is ～ (2?3) × 10¹⁴cm^-2. Thermal destruction of the islands at T > 1900 K liberates the potassium and cesium atoms from under the graphite islands. Our study suggests that the reason for the “raised” position of the islands lies in the valence bonds of the graphite layer being saturated, the valence bonds of the metal and its crystallographic orientation being less significant. Therefore one may expect the graphite layer to be raised also above other metals as well. The filling by cesium of the recess between the graphite layer and iridium and of the adsorption phase on the graphite surface, does not change the general “graphitic” shape of the carbon Auger peak. This cesium results, however, in a pronounced splitting of the negative spike on the carbon peak (which provides information on its location relative to the graphite layer) indicating the appearance in the valence band of graphite near the Fermi level of two narrow (～ 2?3 eV) regions with an enhanced density of states originating from the presence of the alkali metal.     

The adsorption of methyl iodide on uranium and uranium dioxide: Surface characterization using X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES)

The adsorption of methyl iodide on uranium and on uranium dioxide has been studied at 25 °C. Surfaces of the substrates were characterized before and after adsorption by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). The XPS binding energy results indicate that CH₃I adsorption on uranium yields a carbide-type carbon, UC, and uranium iodide, UI₃. On uranium dioxide the carbon electron binding energy measurements are consistent with the formation of a hydrocarbon, —CH₃-type moiety. The interpretation of XPS and AES spectral features for CH₃I adsorption on uranium suggest that a complex dissociative adsorption reaction takes place. Adsorption of CH₃I on UO₂ occurs via a dissociative process. Saturation coverage occurs on uranium at approximately two langmuir (1 L = 10^?6 Torr s) exposure whereas saturation coverage on uranium dioxide is found at about five langmuir.     

Ellipsometrical determination of barrier thicknesses of metal-insulator-metal tunnel junctions

The thickness of the tunneling barrier of AlAl_xO_yAl and AlAl_xO_yPb junctions was determined using an automated ellipsometer. It is shown that the tunneling resistance depends exponentially on the barrier thickness. A practical consequence is that any wanted tunneling resistance can be realized within the accuracy of half an order of magnitude.     

Surface segregation in liquid GaSn alloys by AES

The surface segregation of Sn in liquid GaSn alloys has been studied by Auger electron spectroscopy as a function of bulk concentration at 350° C. The Sn was found to be strongly adsorbed at the surface. The surface concentrations of Sn and Ga were calculated from the Auger measurements using inelastic mean free paths and backscattering factors estimated in recent theoretical work. The values found for the surface concentrations are essentially in agreement with those deduced from surface tension measurements using Gibbs adsorption theory. This result supports a monolayer adsorption distribution in the GaSn system.     

Effect of surface plasmon oscillations on Auger electron emission

The integrated areas of the Al L₂₃VV and O KL₂₃L₂₃ Auger peaks and the Al surface plasmon energy ?ω_S are reported for the Al(001) surface as a function of exposure to O in the exposure range 0–114 L(1 L=1langmuir=10^?6Torr sec). It is shown that for exposures below a critical value of 15 L, ?ω_S is constant within experimental error while the O Auger peak area increases linearly. For exposures above 15 L, ?ω_S decreases linearly from 10.5 eV to 8.5 eV and the O Auger peak area undergoes relatively slow linear increases correspondingly. The Al Auger peak area decreases by 30% per 1 eV decrease of ?ω_S. The results are discussed with reference to theory relating Auger transition intensities to the spectral density function.     

The N45N67X Coster-Kronig transitions of gold

An experimental and theoretical study of the N₄₅N₆₇N₆₇ super-Coster-Kronig and the N₄₅N₆₇O Coster-Kronig transitions of gold has been undertaken. The results are analysed within an intermediate coupling framework on the basis of the semi-empirical Auger electron model developed by Larkins. The most significant finding is that the transition probability calculations by McGuire based on an atomic system overestimate the relative importance of the N₄₅N₆₇N₆₇ processes in the solid system. The main de-excitation processes are the N₄₅N₆₇ V transitions involving the conduction band of gold.     

Cluster studies of CO adsorption: II. CO on small Al clusters

Results for the free-electron-like metal Al (r_s = 2.07 bohr) are compared with previous Li (r_s = 3.25 bohr) results. From an analysis of the various contributions to the total adsorption energy (steric interaction, σ-bonding, π-backbonding) as a function of the CO height above the surface, and the adsorption site, it appears that high conduction electron density leads to strong exchange repulsion. At the top site this effect is partly cancelled by the favourable interaction possibilities with Al 3p functions. The most striking differences with Li are thus the very weak adsorption at the hollow site, and stronger adsorption at the top site.     

Raman scattering study of Al/Ga interdiffusion in ion-implanted and annealed GaAsGa1−xAlxAs superlattices

The Al/Ga interdiffusion after annealing has been characterized by Raman scattering on a GaAsGa_1−xAl_xAs superlattice where different densities of damage had been initially induced by implantation of electrically inactive isoelectronic elements, ³¹P⁺, in order to eliminate the impurity charge associated effects. To probe the mixing beyond the damaged zone of the superlattice, complementary Auger and SIMS experiments have implantation induced defects proceeds from the examination of the whole set of results.     

Lateral interactions in the thermal desorption of H2 from clean Cu/Ni(110) alloy surfaces

The adsorption of hydrogen on a clean Cu10%/Ni90% (110) alloy single crystal was studied using flash desorption spectroscopy (FDS), Auger electron spectroscopy (AES), and work function measurements. Surface compositions were varied from 100% Ni to 35% Ni. The hydrogen chemisorption on a-surface of 100% nickel revealed strong attractive interactions between the hydrogen atoms in accordance with previous work on Ni(100). Three desorption states (β₁, β₂ and α) appeared in the desorption spectra. The highest temperature (α) state was occupied only after the initial population of the β₂-state. As the amount of copper was increased in the nickel substrate, desorption from the higher energy binding α-state was reduced, indicating a decrease in the attractive interactions among hydrogen atoms. The hydrogen coverage at saturation was not affected by the addition of copper to the nickel substrate until the copper concentration was greater than 25% at which a sharp reduction in saturation coverage occurred. This phenomenon was apparently due to the adsorption of hydrogen on Ni atoms followed by occupation of NiNi and CuNi bridged adsorption sites, while occupation of CuCu sites was restricted due to an energy barrier to migration.     

Geometry of acetylene chemisorption on Ni(100) investigated by leed intensity analysis: The c(2 × 2) structure

Results from LEED dynamical calculations performed on the Ni(100) c(2 × 2)C₂H₂ structure, produced by adsorption of C₂H₂ at about 273 K and 1.5 L exposure, are reported. Among the several model geometries tried, the most favoured one appears to be a distorted acetylene molecule with the midpoint of the CC bond (1.20 Å long) placed above the fourfold hollow site at a vertical distance 2.02 Å from the topmost Ni layer and with the CC axis itself tilted by 50° with respect to the surface normal in the [011] direction. In this geometry the NiC distance is 2.2 Å.