Electrical properties of plastically deformed n-type InSb

The conductivity and Hall effect have been measured between 78 ° and 295 ° K for n-InSb plastically deformed by uniaxial compression at 150 °, 200 °, 250 °, and 300 ° C. The sharp fall in the conductivity and the rise in the Hall coefficient are explained by trapping and scattering of carriers at dislocations and by scattering at point defects. Hole conduction occurs at low temperatures in specimens deformed 2.3% at 300 ° C. All deformed n-type specimens alter their low-temperature conductivity type after 3 hr at 300 ° C.     

Interface of anodic sulfide-oxide on n-type InSb

A novel anodic sulfidization process for forming native sulfide-oxide films on n-type InSb is described. The results of Auger electron spectroscopy analysis indicate that native sulfide-oxide films are formed from aqueous sulfide solutions. The measured capacitance-voltage characteristics of metal-insulator-semiconductor devices indicate that the films have a low fixed surface charge density of the order of 3×10¹⁰ cm^–2 and small hysteresis. The native sulfide-oxide films leave the surface of n-type InSb practically at flatband and in this respect are superior to the passivation layers of anodic oxide and direct plasma SiN _x . The interface between InSb and its native sulfide-oxide in combination with plasma CVD SiN _x has excellent electrical properties.     

Temperature dependence of terahertz radiation from n-type InSb and n-type InAs surfaces

The azimuthal angle dependence and the temperature dependence of terahertz (THz) radiation generated from n-type (111) InSb and n-type (111) InAs surfaces irradiated with ∼80 fs near-infrared laser pulses are investigated. The azimuthal angle dependence shows that the contribution of the difference-frequency mixing (DFM) is not dominant for both materials at the excitation density of ∼1 GW/cm². At an appropriate azimuthal angle, the radiation due to DFM is excluded from the total THz radiation and the temperature dependence of THz radiation due to the surge current is observed. The increase of THz radiation with decrease of the temperature is found to be much more pronounced for InSb than for InAs. The different temperature dependence can be attributed to the different radiation mechanisms dominant for both materials. Especially, the temperature dependence of the THz radiation from InSb is well explained by the photo-Dember effect. Received: 9 May 2000 / Revised version: 17 August 2000 / Published online: 5 October 2000     

Evidence of a radiation-induced defect level in n-type InSb

Capacitance bridge measurements of loss on irradiated n-type InSb specimens at low temperatures are reported. A peak in a.c. conductance at 51 K is seen after irradiation and it is attributed to a radiation induced level.     

On the observation of surface magnetoplasmons

It is shown that, of the two techniques (grating or prism coupling) proposed for the observation of surface magnetoplasmons, the prism technique appears far superior. An analytic reflectivity formula is presented which will be necessary in the analysis of surface magnetoplasmon experimental data.     

Photomagnetic effect in n-type InSb at 77 °K

The steady-state odd photomagnetic effect was studied at liquid-nitrogen temperatures (77 °K) in n-type InSb having a carrier density of 4.2 · 10¹⁶ cm^-3. When the rate of surface recombination on the illuminated surface is higher than on the dark surface, the photomagnetic effect becomes negative in suitable magnetic fields.Translated from Izvestiya VUZ. Fizika, No. 7, pp. 28–31, June, 1970.The authors thank V. A. Gridin for useful discussions.     

A note on surface magnetoplasmons in semiconductors

The results of Brion et al. [Phys. Rev. Lett.28, 1455 (1972)] are reinterpreted to predict, in facile manner, the type of inequalities that need to be satisfied by the surface parameters for the existence of gaps and multiple branches in the dispersion curves for surface waves along the interface of a semiconductor-semiconductor structure.     

Magnetoabsorption in n-type InSb from 8 to 15 μm

Magnetoabsorption measurements in n-type InSb at T?30K have been made between ～ 8 and 15 μm using magnetic fields up to 150 kOe. The observed absorption peaks are identified as due to combined resonance, harmonics of cyclotron resonance and the corresponding LO phonon-assisted resonances. These resonant absorptions are considered to be important in the interpretation of the observed magnetic field behavior of the threshold and output power of the InSb spin-flip Raman laser pumped with 10.6 μm CO₂ laser.     

Interaction of surface magnetoplasmons and surface optical phonons in polar semiconductors

A theoretical investigation has been carried out of surface polaritons associated with surface magnetoplasmons coupled to surface optical phonons in polar semiconductors. The coupled mode frequencies are calculated for several orientations of the magnetic field relative to the surface and the direction of propagation in the large wave vector (unretarded) limit. Dispersion curves are calculated for the configuration in which the magnetic field is parallel to the surface and is perpendicular to the wave vector. Experimental possibilities for observing the interaction effects are discussed.     

The linear dispersion coefficient of surface magnetoplasmons

The dispersion of surface magnetoplasmons supported on a semiconductor-vacuum interface which is normal to an applied magnetic field is investigated. It is assumed that the surface possesses a depletion layer and that the dispersion is of hydrodynamic origin. Dimensionless numerical results are obtained for the magnetic field dependence of the linear dispersion coefficient with special reference being given to n-type InSb.     

Current transport in forward biased schottky barriers on low doped n-type InSb

Measurements of the forward current characteristics and the barrier heights of Schottky barriers on chemically etched low-doped n-InSb surfaces have been performed. The barrier height determined from the $\text{1}\text{C}{}^2$ versus V plot is in good agreement with the value from the thermal activation energy, while the barrier height obtained from the saturation current deviates to a great extent. The difference can be seen to correlate with the ideality factor of the forward I–V characteristics. This irregular behaviour is attributed to the presence of a thin interfacial dielectric layer and to an ideality factor due to the Shockley-Read-Hall (SRH) controlled occupation of the interface states.     

Theory of surface polaritons in n-type silicon in the presence of a DC current

A theoretical investigation has been carried out on the effect of a drift current on surface polaritons in n-type silicon. The current direction is taken to be parallel to the direction of propagation of the surface polaritons. From the dispersion curves, there is evidence that an interaction takes place between the current and the polaritons which gives rise to polariton instability or amplification for certain frequency ranges. These instabilities are believed to be due to the presence of the surface.     

Theory of the effect of a dc current on surface polaritons in n-type silicon

A theoretical investigation has been made of the effect of a drift current on surface polaritons in n-type silicon. The current direction is taken to be the same as the propagation direction of the surface polaritons. Retardation is included, but damping is neglected. In obtaining the dispersion relation, the specular-reflection/mirror-image technique of Kliewer and Fuchs is used to handle the boundary conditions. The results indicate that an interaction takes place between the current and polaritons which gives rise to polariton instabilities for certain frequency ranges. These instabilities are a consequence of the presence of the surface.     

Theory of spin-flip Raman amplification in InSb

The advantages of a magneto-Raman amplifier technique for accurate study of the spin-flip Raman gain and line shape are discussed. Spin-saturation is accounted for in the theory, and found to cause anomalous line-broadening, as well as gain reduction. Related applications of the technique are outlined.     

Plasma resonance guiding of surface magnetoplasmons by thin semiconductor films

Theoretical investigation on surface magnetoplasmons maintained by the plasma resonance in a thin (comparing to the wavelength) semiconducting film placed on a perfectly conducting substrate is presented. Dispersion characteristics and nonreciprocal behaviour of surface magnetoplasmons are studied for arbitrary orientation of externally applied magnetostatic field and for various profiles of film inhomogeneity.     

熔体旋甩工艺对n型InSb化合物的微结构及热电性能的影响

采用新颖的熔体旋甩结合放电等离子烧结技术制备了单相InSb化合物,研究了熔体旋甩工艺对其微结构以及热电性能的影响. 结果表明,熔体旋甩得到的薄带自由面主要由300 nm—2 μm的小柱状晶组成,薄带接触面为非晶或精细纳米晶,薄带经烧结后得到了具有大量层状精细纳米结构的致密块体,尺寸约为40 nm. 与熔融+放电等离子体烧结制备样品相比,在测试温度范围内（300—700 K）,试样的电导率略有下降,但Seebeck系数显著增加,热导率和晶格热导率显著降低,室温下晶格热导率降低幅度约为106%,700 K下晶格热导率的降低幅度达1664%,熔融+熔体旋甩+放电等离子体烧结制备的InSb化合物试样在700 K时其最大ZT值达到049,与熔融+放电等离子体烧结试样相比提高了29%. 关键词： 熔体旋甩 n型InSb化合物 微结构 热电性能     

熔体旋甩工艺对n型InSb化合物的微结构及热电性能的影响

采用新颖的熔体旋甩结合放电等离子烧结技术制备了单相InSb化合物,研究了熔体旋甩工艺对其微结构以及热电性能的影响. 结果表明,熔体旋甩得到的薄带自由面主要由300 nm—2 μm的小柱状晶组成,薄带接触面为非晶或精细纳米晶,薄带经烧结后得到了具有大量层状精细纳米结构的致密块体,尺寸约为40 nm. 与熔融+放电等离子体烧结制备样品相比,在测试温度范围内（300—700 K）,试样的电导率略有下降,但Seebeck系数显著增加,热导率和晶格热导率显著降低,室温下晶格热导率降低幅度约为106%,700 K下晶格热导率的降低幅度达1664%,熔融+熔体旋甩+放电等离子体烧结制备的InSb化合物试样在700 K时其最大ZT值达到049,与熔融+放电等离子体烧结试样相比提高了29%.