Upconversion luminescence of CdTe nanocrystals by use of near-infrared femtosecond laser excitation

We study the steady-state and time-resolved luminescent properties of CdTe nanocrystals by one- and two-photon excitation with a femtosecond laser. We observe that 1208 nm excitation causes a shift of the emission peak of about 20 nm to the infrared compared with 400 nm laser excitation. It is found that upconversion luminescence is composed of a photoinduced trapping and a band edge excitonic state and produces the observation of biexponential decay kinetics. We conclude that the redshift of the emission peak is caused by the relative change in luminescence intensity between excitonic and trapping states.     

玻璃中CdSeS纳米晶体的生长及其性能

对掺有镉、硒、硫的玻璃在500—800℃退火2—24h,生长了不同尺寸的CdSxSe1x纳米晶体.用分光光度计和光致发光光谱(PL)分析了纳米晶体的性能.退火温度低于550℃,纳米晶体处于成核阶段,600—625℃处于正常扩散生长阶段,700—800℃处于竞争生长阶段;而650℃处于两种生长阶段之间.虽然650℃下生长的纳米晶体的尺寸分布比较窄,但纳米晶体的尺寸随退火时间的延长几乎不变,在该温度改变退火时间很难改变纳米晶体的平均尺寸.在所有样品中出现了深能级缺陷,在650℃退火时间小于4h或大于16h有利 关键词： 纳米晶体 生长机理 深能级缺陷     

Superlinear photoluminescence in silicon nanocrystals: The role of excitation wavelength

We study the influence of the wavelength of picosecond excitation pulses on the properties of photoluminescence (PL) in a series of samples of silicon nanocrystals prepared by ion implantation into silica matrix. We observed a gradual change in the behaviour of the PL fast component (spectral shape, decay times, pump-intensity dependence) when tuning the excitation wavelength from 355 to 532 nm. We interpret the results in terms of an interplay between the PL originating from volume states of nanocrystals containing two photoexcited carrier pairs, and the PL due to the silicon oxide states. We discuss also the role of the implant fluence on the PL properties of samples.     

Photoluminescence of Si nanocrystals under selective excitation

Photoluminescence of Si nanocrystals passivated by different alkanes (hexane, octane, and tridecane) was studied at room temperature. It is shown that the emission band shape is not affected by the length of the carbon chain in the alkanes used for passivation. A pronounced fine structure of the photoluminescence band consisting of peaks separated by 150-160 meV was observed under resonant excitation. The structure is interpreted by predominant contribution from Si nanocrystal groups with particular stable size/shape existing in addition to the previously reported nanocrystals with “magic” numbers of Si atoms. The contribution of these stable nanocrystals is revealed using selective resonant photoexcitation to the higher energy states in the discrete energy spectrum of such nanocrystals.     

不同激发波长下单壁碳纳米管与多壁碳纳米管的拉曼光谱比较

对不同激发波长下单壁和多壁碳纳米管的激光拉曼光谱进行了比较。发现单壁碳纳米管D峰强度和G峰强度的比值(ID/IG)几乎不随激发光子能量的改变而变化,多壁碳纳米管ID/IG值随着激发光子能量的增加以斜率0 3/eV减小。并对此现象进行了初步的分析。此外,还发现在1064nm激发波长下,单壁和多壁碳纳米管2500-3500cm-1之间拉曼峰的相对强度随着入射激光功率的增加而增加。     

发光二极管峰值波长偏移对色度的影响

利用可调恒流源控制彩色LED发光,采用多道光谱仪测量LED的光谱特性,得到峰值波长随工作电流的变化产生的偏移,并计算了由此而引起的色度值变化.     

Laser-induced fluorescence characteristics of vegetation by a new excitation wavelength

To recognize different vegetation species exactly, especially the species of the same family, laser-induced fluorescence characteristics of vegetation, which is excited by 556 nm laser rather than the traditional 355 nm excitation light source, is proposed to be utilized in this article. The experimental results demonstrated that fluorescence characteristics of vegetation induced by a 556 nm laser are more obvious than that induced by a 355 nm laser. These fluorescence spectra, combined with multivariate analysis, are utilized to identify different vegetation species. The 100% of recognition rate was then acquired. Therefore, this study shows that different plant types could be accurately identified when a 556 nm laser serves as excitation light source.     

DCM染料激光激发下的HoP5O14非晶的上转换发光动力学

本文研究了DCM染料激光激发下的HoP5O14非晶在370－580nm兰绿波段上的转换发光的动力学过程,发现离子间能量传递上转换和步进双光子吸收两种要理都共同参与导致了它们的转换发光,而激发光频率的稍微改变会使其上转换动力学发生很大变化。     

Modification of spectral characteristics and optogalvanic response in neon hollow cathode under laser excitation

The changes in emission characteristics of a neon hollow cathode discharge by resonant laser excitation of 1s ₅→2p ₂ and 1s ₅→2p ₄ transition have been studied by simultaneously monitoring the optogalvanic effect and the laser induced fluorescence. It has been observed that resonant excitation causes substantial variation in the relative intensities of lines in the emission spectrum of neon discharge.     

Synthesis of blue-shifted luminescent colloidal GaN nanocrystals through femtosecond pulsed laser ablation in organic solution

We demonstrate the synthesis of GaN nanocrystals (NCs) with the sizes of less than the doubled exciton Bohr radius leading quantum confinement effects via a single-step technique. The generation of colloidal GaN nanoparticles (NPs) in organic solution through nanosecond (ns) and femtosecond (fs) pulsed laser ablation (PLA) of GaN powder was carried out. Ns PLA in ethanol and polymer matrix resulted in amorphous GaN-NPs with the size distribution of 12.4 ± 7.0 and 6.4 ± 2.3 nm, respectively, whereas fs PLA in ethanol produced colloidal GaN-NCs with spherical shape within 4.2 ± 1.9 nm particle size distribution. XRD and selected area electron diffraction analysis of the product via fs PLA revealed that GaN-NCs are in wurtzite structure. Moreover, X-ray photoelectron spectroscopy measurements also confirm the presence of GaN nanomaterials. The colloidal GaN-NCs solution exhibits strong blue shift in the absorption spectrum compared to that of the GaN-NPs via ns PLA in ethanol. Furthermore, the photoluminescence emission behavior of fs PLA-generated GaN-NCs in the 295–400 nm wavelength range is observed with a peak position located at 305 nm showing a strong blue shift with respect to the bulk GaN.     

Photo- and thermochemical initiation of PETN under laser excitation

A method for separate control of the efficiencies of the photochemical and thermochemical mechanisms of initiation of energetic materials by laser excitation for a combined action of these mechanisms is proposed. The method is based on the difference in the timescales of the relevant photo- and thermochemical initiation processes, a factor that leads to a different dependence of the efficiencies of these mechanisms on the initiating pulse duration and initiation irradiance. An experimental validation of the method for the initiation of PETN with 1064- and 1070-nm light at irradiances of ～10⁹ and ～10⁴ W/cm², respectively, is performed. The results show that, for the initiation of pure PETN at an irradiance of 10⁹ W/cm², the photochemical mechanism dominates, ensuring an initiation threshold of ～4 J/cm². In the case of samples with light-absorbing inclusions (carbon) and the same irradiance ～10⁴ W/cm², only the thermochemical mechanism is operative, with an initiation threshold of ～15 J/cm². In the absence of light-absorbing inclusions, the sample does not explode even at a fluence of ～75 J/cm²; i.e., in this case, the initiation threshold is clearly higher than this value.     

Laser cleaning of stone by different laser pulse duration and wavelength

The present work focuses on the main phenomenological features of stone cleaning by lasers. These are the removal rate, cleaning degree, and chromatic appearance of the treated surface associated with different conservation problems and laser parameters. A set of three different outdoor stone conservation problems were investigated here. The measurement of the ablation rates were carried out on encrusted stone artifacts and two sets of standards in order to derive general behaviors through repeatable measurements. The analysis of the irradiation tests provided quantification of the different efficiencies, cleaning degree, and chromatic appearances associated with the fundamental harmonic of Q-switching, long Q-switching, and short free-running Nd:YAG lasers (1064 nm), as well as with the second harmonic of Q-switching sources (532 nm).     

Time-resolved transmission of GaAs under intense laser excitation

Time-resolved transmission and reflectivity of bulk GaAs and GaAs on sapphire have been studied at λ = 1152 and 633 nm following excitation by an ≈8 ns pulse at 485 nm. As in the case of silicon, the spectral dependence of the transient absorption coefficient, from 1.1 eV to 2.5 eV, is inconsistent with the existence of a metallic molten state during pulsed laser annealing.     

多横模垂直腔面发射激光器及其波长特性

基于氧化限制型内腔接触垂直腔面发射激光器(VCSEL) 结构设计, 研究了VCSEL的多横模分布及其模式波长分裂特性与氧化孔径尺寸、形状的关系. 在实验基础上, 通过建立有效折射率模型, 并利用标量亥姆霍兹方程的迭代算法理论, 分别对椭圆形氧化孔径和圆形氧化孔径VCSEL的横向模式特性进行模拟研究, 计算得到不同形状孔径的多横模光场分布情况, 同时测量得到高阶横模多频输出光谱. 研究发现, 椭圆氧化孔形状不仅影响横模分布特性, 还会导致每个模式的波长产生分裂, 分裂值可达0.037 nm. 同时, 随着氧化孔径的增大, 波长分裂影响会逐渐减小, 直至趋近于圆形氧化孔径的分布特性. 研究结果为进一步实现氧化限制型VCSEL的多横模锁定提供了有益参考和借鉴.     

Photo-stability of laser dye solutions under Copper-vapour-laser excitation

The photo-stability of laser dyes, Rhodamine-6G, Rhodamine-B, and Kiton-Red, under high repetition rate (6.3 kHz) Copper-vapour-laser (CVL) irradiation has been investigated. Exhaustive photo-bleaching of these dyes in different solvents has been carried out to study the extent to which the dye photo-degraded products would interfere with the lasing process in high-power CVL-pumped dye lasers. Our results indicate that the photo-degradation of dyes occurs predominantly through excited-state intermolecular reactions, involving the singlet state, rather than the process of nonlinear optical absorption in individual molecules. Received: 13 March 2000 / Revised version: 2 August 2000 / Published online: 21 March 2001     

Laser pyrolysis synthesis and characterization of luminescent silicon nanocrystals

Quantum dots of silicon are very attractive materials due to their photoluminescence (PL) emission that can be very strong at room temperature in the visible range under UV illumination. Weighable batches are demanded for several applications in opto-electronic, photovoltaic, medicine, and so on. Laser pyrolysis of silane in a flow reactor is an efficient method to synthesize silicon nanocrystals, but up to now the production rate for the smallest particles was very low. We present here results of a work aimed to overcome this limitation. Optimization of the laser pyrolysis process has been performed through an elaborate study of the synthesis parameters. Weighable batches of very small silicon particles were obtained in a controlled and reproducible way, with production rate in the 0.1–1 g/h. High-resolution electron microscopy and specific surface measurements show that the particles were true silicon nanocrystals in the 4–9 nm range. We have then studied their PL properties. For this purpose, we have paid a particular attention to the surface passivation, an essential step to obtain efficient PL. Various ways were explored: natural oxidation under air and dispersion in liquids. We show that after natural oxidation, the PL properties are, as expected, in agreement with the quantum confinement model. Strong PL is also obtained by dispersion in solvents, but the interpretation is less straightforward in this case, and as discussed in the paper, needs further investigation.     

Effects of laser pulse wavelength and laser fluence on the characteristics of silver nanoparticle generated by laser ablation

Electrically pumped ultraviolet random lasing was achieved in metal-insulator-semiconductor (MIS) diodes based on ZnO films at room temperature. The ZnO films were grown by plasma assisted molecular beam epitaxy. Two different kinds of insulator layers, SiO _x (0<x≤2) and AlO _x (0<x≤1.5) were deposited by electron beam evaporation. X-ray diffraction experiments found these oxide layers were amorphous (or microcrystals), and X-ray photoelectron spectroscopy confirmed the Si and Al were fully oxidized. Compared with devices using SiO _x as the insulator layer, diodes with evaporated AlO _x layers showed a lower working threshold forward current (～20 mA to ～26 mA) and higher emission intensity. Periodic features indicating formation of closed-loop paths were deduced by the power Fourier transform of electroluminescence spectra. The cavity length of both devices increased as forward currents increased, while a larger cavity length was always obtained in the AlO _x -involved device under the same working current. The improved performance was attributed to larger hole amount in AlO _x layers. These results revealed that evaporated AlO _x can serve as good electron blocking and hole supplying layers for hetero-structures.