深亚微米金属氧化物场效应晶体管及寄生双极晶体管的总剂量效应研究

为从工艺角度深入研究航空航天用互补金属氧化物半导体(CMOS)工艺混合信号集成电路总剂量辐射损伤机理, 选取国产CMOS 工艺制作的NMOS晶体管及寄生双极晶体管进行了⁶⁰Coγ射线源下的总剂量试验研究. 发现: 1) CMOS工艺中固有的寄生效应导致NMOS晶体管截止区漏电流对总剂量敏感, 随总剂量累积而增 大; 2) 寄生双极晶体管总剂量损伤与常规双极晶体管不同, 表现为对总剂量不敏感, 分析认为两者辐射损伤的差异来源于制作工艺的不同; 3)寄生双极晶体管与NMOS晶体 管的总剂量损伤没有耦合效应; 4)基于上述研究成果, 初步分析CMOS工艺混合信号集成电路中数字模块及模拟模块辐射损伤机制, 认为MOS晶体管截止漏电流增大是导致数字模块功耗增大的主因, 而Bandgap电压基准源模块对总剂量不敏感源于寄生双极晶体管抗总剂量辐射的能力. 关键词： 总剂量效应 N沟道金属氧化物场效应晶体管 寄生双极晶体管 Bandgap基准电压源     

绝缘体上硅金属氧化物半导体场效应晶体管中辐射导致的寄生效应研究

基于⁶⁰Co γ射线源研究了总剂量辐射对绝缘体上硅（silicon on insulator,SOI）金属氧化物半导体场效应晶体管器件的影响.通过对比不同尺寸器件的辐射响应,分析了导致辐照后器件性能退化的不同机制.实验表明：器件的性能退化来源于辐射增强的寄生效应;浅沟槽隔离（shallow trench isolation,STI）寄生晶体管的开启导致了关态漏电流随总剂量呈指数增加,直到达到饱和;STI氧化层的陷阱电荷共享导致了窄沟道器件的阈值电压漂移,而短沟道器件的阈值电压漂移则来自于背栅阈值耦合;在同一工艺下,尺寸较小的器件对总剂量效应更敏感.探讨了背栅和体区加负偏压对总剂量效应的影响,SOI器件背栅或体区的负偏压可以在一定程度上抑制辐射增强的寄生效应,从而改善辐照后器件的电学特性.     

纳米尺度金属-氧化物半导体场效应晶体管沟道热噪声模型

随着CMOS工艺的发展,热载流子效应对沟道热噪声的影响随着器件尺寸的降低而增大,传统热噪声模型未能准确表征沟道的热噪声.本文通过解能量平衡方程,得到电子温度表达式,并结合沟道漏电流表达式,建立了沟道热噪声模型.利用建立的电子温度表达式,该热噪声模型考虑了热载流子效应的影响,并且在计算热噪声的过程中考虑了电子温度对迁移率降低的影响以及温度梯度对热噪声的影响.通过分析与计算,结果显示,随着器件尺寸的减小,温度梯度对电子温度产生显著影响,使得热载流子效应的影响增大,热载流子效应对热噪声的增长作用超过了迁移率降低对热噪声的减小作用,最终导致热噪声增大.本文建立的沟道热噪声模型可应用于纳米尺寸金属-氧化物半导体场效应晶体管器件的噪声性能分析及建模.     

Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor

Drain-modulated generation current IDMGinduced by interface traps in an n-type metal-oxide-semiconductor fieldeffect transistor(n MOSFET) is investigated. The formation of IDMGascribes to the change of the Si surface potential φs.This change makes the channel suffer transformation from the inversion state, depletion I state to depletion II state. The simulation result agrees with the experiment in the inversion and depletion I states. In the depletion II state, the theoretical curve goes into saturation, while the experimental curve drops quickly as VDincreases. The reason for this unconformity is that the drain-to-gate voltage VDGlessens φs around the drain corner and controls the falling edge of the IDMG curve.The experiments of gate-modulated generation and recombination currents are also applied to verify the reasonability of the mechanism. Based on this mechanism, a theoretical model of the IDMGfalling edge is set up in which IDMGhas an exponential attenuation relation with VDG. Finally, the critical fitting coefficient t of the experimental curves is extracted. It is found that t = 80 m V = 3k T /q. This result fully shows the accuracy of the above mechanism.     

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)with an atomic layer deposited Al2O3gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated.Temperature dependent electrical characteristics are investigated.Different electrical behaviors are observed in two temperature regions,and the underlying mechanisms are discussed.It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current,which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions.Methods to further reduce the off-state drain leakage current are given.     

Two-dimensional photon counting imaging detector based on a Vernier position sensitive anode readout

A two-dimensional photon counting imaging detector based on a Vernier position sensitive anode is reported. The decode principle and design of a two-dimensionai Vernier anode axe introduced in detail. A photon counting imaging system was built based on a Vernier anode. The image of very weak optical radiation can be reconstructed by image processing in a period of integration time. The resolution is superior to 100 μm according to the resolution test. The detector may realize the imaging of very weak particle flow of high- energy photons, electrons and ions, so it can be used for high-energy physics, deep space exploration, spectral measurement and bio-luminescence detection.     

Vernier型光子计数探测器阳极电容仿真与试验研究

根据Vernier型光子技术探测器的工作原理, 论述了电子云质心解码与阳极面板形成的微小极间电容和电路前端噪声有着密切的关系; 根据泊松方程, 建立了Vernier阳极的数学模型. 利用有限元软件ANSYS计算出同面多电极不规则图形的电容值与极间电容值, 解决了如何计算不规则形状电容值的问题; 利用皮秒激光器在镀有金膜的石英基底上刻蚀出与仿真参数一致的Vernier型阳极, 并测量其电容值. 将测量电容值与仿真值进行比较, 验证了建立模型的正确性, 优化了Vernier阳极的设计参数.     

Two-dimensional photon counting imaging detector based on a Vernier position sensitive anode readout

A two-dimensional photon counting imaging detector based on a Vernier position sensitive anode is reported. The decode principle and design of a two-dimensional Vernier anode are introduced in detail. A photon counting imaging system was built based on a Vernier anode. The image of very weak optical radiation can be reconstructed by image processing in a period of integration time. The resolution is superior to 100 μm according to the resolution test. The detector may realize the imaging of very weak particle flow of high-energy photons, electrons and ions, so it can be used for high-energy physics, deep space exploration, spectral measurement and bio-luminescence detection.     

电离辐射环境下的部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管可靠性研究

随着半导体技术的进步, 集成小尺寸绝缘体上硅器件的芯片开始应用到航空航天领域, 使得器件在使用中面临了深空辐射环境与自身常规可靠性的双重挑战. 进行小尺寸器件电离辐射环境下的可靠性试验有助于对器件综合可靠性进行评估. 参照国标GB2689.1-81恒定应力寿命试验与加速寿命试验方法总则进行电应力选取, 对部分耗尽绝缘体上硅n型金属氧化物半导体场效应晶体管进行了电离辐射环境下的常规可靠性研究. 通过试验对比, 定性地分析了氧化物陷阱电荷和界面态对器件敏感参数的影响, 得出了氧化物陷阱电荷和界面态随着时间参数的变化, 在不同阶段对器件参数的影响. 结果表明, 总剂量效应与电应力的共同作用将加剧器件敏感参数的退化, 二者的共同作用远大于单一影响因子.     

具有P型覆盖层新型超级结横向双扩散功率器件

为了设计功率集成电路所需要的低功耗横向双扩散金属氧化物半导体器件(lateral double-diffused MOSFET), 在已有的N型缓冲层超级结LDMOS(N-buffered-SJ-LDMOS)结构基础上, 提出了一种具有P型覆盖层新型超级结LDMOS结构(P-covered-SJ-LDMOS). 这种结构不但能够消除传统的N沟道SJ-LDMOS由于P型衬底产生的衬底辅助耗尽问题, 使得超级结层的N区和P区的电荷完全补偿, 而且还能利用覆盖层的电荷补偿作用, 提高N型缓冲层浓度, 从而降低了器件的比导通电阻. 利用三维仿真软件ISE分析表明, 在漂移区长度均为10 μm的情况下, P-covered-SJ-LDMOS的比导通电阻较一般SJ-LDMOS结构降低了59%左右, 较文献提出的N型缓冲层 SJ-LDMOS(N-buffered-SJ-LDMOS)结构降低了43%左右.     

用于脉冲星导航的X射线光子计数探测器研究

研制了用于脉冲星导航的X射线光子计数探测器原理样机, 该探测器主要由对X射线灵敏度较高的CsI光电阴极、微通道板电子倍增器和收集阳极组成. 对X射线光子计数探测器灵敏度、时间分辨率和整个系统的死时间进行了测试, 实验结果表明该探测器的灵敏度在5 keV时可达5.2× 10³ A/W, 时间分辨率可达到1.1 ns, 系统整体的死时间为100 ns. 关键词： 脉冲星导航 光子计数探测器 灵敏度 时间分辨率     

极紫外波段微通道板光子计数探测器

研究了一种极紫外波段微通道板（MCP）光子计数探测器,用于探测地球等离子体层中极微弱的30.4 nm辐射。通过改变电压、温度等参数对比了该微通道板光子计数探测器的暗噪声和分辨率的变化。结果表明：微通道板探测器的暗噪声主要来源于残余气体离子反馈和热噪声,因此要降低探测器暗噪声,应对微通道进行彻底的预处理除气,并尽量避免探测器在高温状态下工作,常温下经过预处理的微通道板光子探测系统的暗计数率仅为0.34 count/（s.cm2）。系统的分辨率主要受电压和计数率的影响,受温度影响不明显。由于不同的微通道板有不同的耐压范围,过小或过大的电压或计数率都会造成系统分辨率的降低。     

Resonant cavity-enhanced quantum dot field-effect transistor as a single-photon detector

A resonant cavity-enhanced （RCE） quantum dot （QD） field-effect transistor （RCEQDFET） is designed for single- photon detection in this paper. Adding distributed Bragg reflection （DBR） mirrors to the single-photon detector （SPD）, we improve the light absorption efficiency of the SPD. The effects of the reflectivity of the mirrors, the thickness and light absorption coefficient of the absorbing layer on the detector＇s light absorption efficiency are investigated, and the resonant cavity is determined by using the air/semiconductor interface as the mirror on the top. Through analyzing the relationship between the refractive index of AlxGal_xAs and A1 component, we choose A1As/Alo.15Gao.85As as the material of the mirror on the bottom. The pairs of A1As/Alo.15Gao.85As film are further determined to be 21 by calculating the reflectivity of the mirror. The detector is fabricated from semiconductor heterostructures grown by molecular beam epitaxy. The reflection spectrum, photoluminescence （PL） spectrum, photocurrent response, and channel current of the detector are tested and the results show that the RCEQDFET-SPD designed in this paper has better performances in photonic response and wavelength selection.     

p型金属氧化物半导体场效应晶体管低剂量率辐射损伤增强效应模型研究

对一种非加固4007电路中p型金属氧化物半导体场效应晶体管(PMOSFET)在不同剂量率条件下的电离辐射损伤效应及高剂量率辐照后的退火效应进行了研究. 通过测量不同剂量率条件下PMOSFET的亚阈I-V特性曲线,得到阈值电压漂移量随累积剂量、退火时间的变化关系. 实验发现,此种型号的PMOSFET具有低剂量率辐射损伤增强效应. 通过描述H⁺在氧化层中的输运过程,解释了界面态的形成原因,初步探讨了非加固4007电路中PMOSFET低剂量率辐射损伤增强效应模型. 关键词： p型金属氧化物半导体场效应晶体管 60Co γ射线')" href="#">⁶⁰Co γ射线 电离辐射损伤 低剂量率辐射损伤增强效应     

Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor(MOSFET) are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a shortchannel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.     

具有poly-Si$lt;sub$gt;1-$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;Ge$lt;sub$gt;$lt;i$gt;x$lt;/i$gt;$lt;/sub$gt;栅的应变SiGep型金属氧化物半导体场效应晶体管阈值电压漂移模型研究

针对具有poly-Si_1-xGe_x栅的应变SiGe p型金属氧化物半导体场效应晶体管(PMOSFET), 研究了其垂直电势与电场分布, 建立了考虑栅耗尽的poly-Si_1-xGe_x栅情况下该器件的等效栅氧化层厚度模型, 并利用该模型分析了poly-Si_1-xGe_x栅及应变SiGe层中Ge组分对等效氧化层厚度的影响. 研究了应变SiGe PMOSFET热载流子产生的机理及其对器件性能的影响, 以及引起应变SiGe PMOSFET阈值电压漂移的机理, 并建立了该器件阈值电压漂移模型, 揭示了器件阈值电压漂移随电应力施加时间、栅极电压、poly-Si_1-xGe_x栅及应变SiGe层中Ge组分的变化关系. 并在此基础上进行了实验验证, 在电应力施加10000 s时, 阈值电压漂移0.032 V, 与模拟结果基本一致, 为应变SiGe PMOSFET及相关电路的设计与制造提供了重要的理论与实践基础. 关键词： 应变SiGep型金属氧化物半导体场效应晶体管 1-xGe_x栅')" href="#">poly-Si_1-xGe_x栅 热载流子 阈值电压     

一维游标位敏阳极光子计数探测器

报道了一维游标位敏阳极光子计数探测器,详细介绍了一维游标位敏阳极的解码原理和设计结果.搭建了基于一维游标位敏阳极探测器的紫外光子计数探测系统.该系统工作于光子计数模式,可同时测量单光子事件的一维坐标.获得了对应入射光空间强度一维分布的脉冲计数分布图.通过测试,系统的分辨率优于100μm.该探测器可以实现极微弱的高能光子、电子和离子等粒子流强度分布的一维探测,因此可以用于深空探测、光谱测量、高能物理以及生物发光探测.     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).     

Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate

Based on the quasi-two-dimensional(2D) solution of Poisson’s equation in two continuous channel regions, an analytical threshold voltage model for short-channel junctionless dual-material cylindrical surrounding-gate(JLDMCSG) metal-oxide-semiconductor field-effect transistor(MOSFET) is developed. Using the derived model, channel potential distribution, horizontal electrical field distribution, and threshold voltage roll-off of JLDMCSG MOSFET are investigated. Compared with junctionless single-material CSG(JLSGCSG) MOSFET, JLDMCSG MOSFET can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is also revealed that threshold voltage rolloff of JLDMCSG can be significantly reduced by adopting both a small oxide thickness and a small silicon channel radius. The model is verified by comparing its calculated results with that obtained from three-dimensional(3D) numerical device simulator ISE.