Investigations of LiInSe2 Epitaxial Layers on {100}- and {110}-oriented Substrates with Sphalerite Structure by Means of RHEED

Epitaxial LiInSe₂ films were deposited by flash evaporation technique on {100}, {110} GaAs and {100} GaP. By means of geometrical considerations based on the concept of corresponding substrate and deposit planes epitaxial relationships can be predicted and compared with results from reflection high energy electron diffraction (RHEED). The epitaxial relationships are given for both rhombic (β-NaFeO₂-type) and tetragonal (chalcopyrite-type) LiInSe₂ deposits on {100}- and {110}-oriented sphalerite-type substrates.     

Vapor phase epitaxy of CdTe on sapphire substrates in dependence on the vapor-flow orientation

The growth of cadmium telluride films on a structured (0001) sapphire surface oriented at an angle of 44° to the vapor-flow direction and normal to the steps formed along the \(11\overline 2 0\) direction is studied. It is found that this geometry of the vapor source and a substrate (heated to a temperature of 300°С) provides the growth of single-crystal CdTe films if a step height on the substrate surface is more than 1 nm. The results are explained by the occurrence of a longitudinal component of the diffusion flux of СdTe molecules and atoms toward the steps from the inner side and their high density at the step edge from the outer side due to the presence of the Ehrlich–Schwoebel barrier, which ensures the efficient supply of material and minimum supersaturation necessary for the nucleation at the step edge and growth of oriented CdTe islands. The cadmium telluride films that are grown have the \(\left( {110} \right)\left[ {1\overline 1 0} \right]CdTe\left\| {\left( {0001} \right)} \right.\left[ {11\overline 2 0} \right]A{l_2}{O_3}\) orientation and a composition similar to stoichiometric CdTe.     

Zur Gleichgewichts- und Wachstumsform von β-Kupferphthalocyanin-Einkristallen

The equilibrium shape of β-copper-phthalocyanine single crystals is obtained by the method of the PBC-vectors according to HARTMAN and PERDOK . These results agree well with the experimentally found growth shape of single crystals grown in the vapour phase. The crystals are of needle-like shape. The crystal surfaces are lattice planes of the kind {001}, {201 }, {100}, {101 } and {110}. The ratio of length to width of the crystals is influenced by the inert gas pressure during the growth process. This dependence is caused by the diffusion of the nutrient.     

Chiral Etch Pits on Sodium Chlorate Crystals

Microtopography of {100}, {110}, {111}, and {210} surfaces of sodium chlorate crystals etched in various solvents has been studied by optical microscopy. It has been established that etch pits formed on left- and right-handed crystals are chiral, and directions of dissolution steps reveal bond chains of the structure.     

The Epitaxial Orientation of Al on Si

It is shown that the epitaxial growth of Al on Si {111} favours the epitaxial relation {111} Si ‖ {100} Al; 〈110〉 Si ‖ 〈110〉 Al instead of the more expected relation {111} Si ‖ {111} Al; 〈110〉 Si ‖ 〈110〉 Al. The elastic energy density of the epitaxial layer in the first case mounts to about 40% of that belonging to the second relation. The calculation of the elastic energy density in both cases is based on the assumption of pseudomorphical epitaxial film overgrowth between deposit and substrate supercells.     

On the question of symmetry classification of ordered tetrahedrally coordinated structures

Substructures of tetrahedrally coordinated polytopes (4D polyhedra) are determined as “polytopes” {136} and {408}, which are divided into nonintersecting 17-vertex aggregations of four centered tetrahedra. It is shown that 17-vertex polyhedra of the diamond structure and polytopes 〈136〉, {240}, 〈408〉, and {5, 3, 3} differ only by the angle of synchronous rotation of external vertex triads, and the cell of each structure is determined by the two nearest nonintersecting 17-vertex polyhedra. The following sequence is proposed as a basis for symmetry classification of ordered tetrahedrally coordinated structures: diamond structure 〈136〉 {240} → 〈408〉 → {5, 3, 3}. The possibilities of the developed approach are demonstrated by the example of constructing a rod with the screw axis 8₂ from cells of the polytope 〈136〉; this rod can be transformed into a diamond substructure: a helicoid of diamond parallelohedra with the screw axis 4₁.     

Electron microscope study of intrinsic and extrinsic stacking faults,and twins in SOS at the early stage of epitaxial growth

Fine structures of the Si films on (1$\text{1}$02) sapphire have been studied by a lattice resolution TEM. The Si was deposited by the pyrolysis of silane in H₂ at 1000°C at a growth rate of 0.1μm/min. The samples for TEM were prepared by peeling off the Si films from the substrates after HF treatment. A film having a mean thickness of 500 Å was composed of (100) and {110} domains. The volume fraction of the {110} domains was more than 50% and about constant as a function of growth time. The {110} domains contained much higher density of microtwins than the (100) domains. These microtwins had various thicknesses including one atomic layer (intrinsic stacking faults) and two atomic layers (extrinsic stacking faults). The density of the intrinsic stacking faults was higher than those of extrinsic stacking faults and other twins. The {110} and (100) islands were nucleated independently and the microtwins were also present in the islands smaller than 500 Å in diameter.     

Geometric modeling of homoepitaxial CVD diamond growth: I. The {1 0 0}{1 1 1}{1 1 0}{1 1 3} system

Plasma-assisted CVD homoepitaxial diamond growth is a process that must satisfy many stringent requirements to meet industrial applications, particularly in high-power electronics. Purity control and crystalline quality of the obtained samples are of paramount importance and their optimization is a subject of active research. In the process of such studies, we have obtained high purity CVD diamond monocrystals with unusual morphologies, namely with apparent {1 1 3} stable faces. This phenomenon has led us to examine the process of CVD diamond growth and build up a 3D geometrical model, presented here, describing the film growth as a function of time. The model has been able to successfully describe the morphology of our obtained crystals and can be used as a predictive tool to predetermine the shape and size of a diamond crystal grown in a given process configuration. This renders accessible control of desirable properties such as largest usable diamond surface area and/or film thickness, before the cutting and polishing manufacture steps take place. The two latter steps are more sensitive to the geometry of the growth sectors, which will be addressed in a companion paper.Our model, applicable to the growth of any cubic lattice material, establishes a complete mapping of the final morphology state of growing diamond, as a function of the growth rates of the crystalline planes considered, namely {1 0 0}, {1 1 1}, {1 1 0}, and {1 1 3} planes, all of which have been observed experimentally in diamond films. The model makes no claim as to the stability of the obtained faces, such as the occurrence of non-epitaxial crystallites or twinning. It is also possible to deduce transient behavior of the crystal morphology as growth time is increased. The model conclusions are presented in the form of a series of diagrams, which trace the existence (and dominance) boundaries of each face type, in presence of the others, and where each boundary crossing represent a topology change in terms of number of faces, edges and vertices. We validate the model by matching it against crystals published in the literature and illustrate its predictive value by suggesting ways to increase usable surface area of the diamond film.     

直流等离子体法中脱膜开裂的金刚石膜组织结构分析

为了解决用直流等离子体喷射法制备金刚石膜在脱膜过程中膜体开裂的问题,本文对3组脱膜开裂的金刚石膜组织结构进行了分析,发现由热应力作用产生的裂纹形貌随沉积温度的不同而呈现网状、河流状和环状,裂纹尖端的膜体具有最小的Raman 谱峰半高宽值.在所研究的温度范围内,膜体断口都是穿晶断裂和沿晶断裂的混合断口,而且断口面中的占优晶面都是{111}晶面.X射线和Raman谱结果还表明沉积温度愈高,膜体中的残余应力愈大.     

工艺参数对高功率MPCVD金刚石膜择优取向的影响研究

使用自行研制的椭球谐振腔式MPCVD装置,以H2-CH4为气源、沉积功率8 kW条件下,在不同CH4浓度、沉积温度和气体流量工艺条件下制备了大面积金刚石膜.使用X射线衍射仪对金刚石膜的择优取向的变化规律进行了研究.实验结果表明,高功率条件下工艺参数对金刚石膜的择优取向有不同程度的影响.在CH4浓度由0.5;上升到1.0;时,金刚石膜的择优取向由(220)转变为(111),由1.O;上升到2.5;时,则由(111)转变为(220)以及(311);在700 ～ 1050℃温度范围内,随着沉积温度的升高,金刚石膜(111)择优取向生长的倾向增高,当沉积温度高于1050℃时,金刚石膜改变了原先的以(111)择优取向生长的趋势,变为了以(100)择优取向生长;在气体流速为200～1000 sccm范围内时,随气体流量的增加,金刚石膜(111)择优取向的倾向增加.当气体流量大于1000sccm时,金刚石膜(111)择优取向的倾向又稍有降低.     

Growth‐Sector Boundaries and Growth‐Rate Dispersion in Potassium Alum Crystals

Crystals of potassium alum, pure and slightly doped with Cr³⁺, were grown from aqueous solution by slow temperature lowering. In addition, short re‐dissolution periods were introduced in order to provoke growth defects and changes of growth rates. Crystal slices of about 1 mm thickness were studied by conventional LANG X‐ray diffraction topography using MoKα radiation. For Cr‐doped crystals, boundaries between {100}, {100} and {111} growth sectors appear by pronounced dynamical X‐ray topographic contrast similar to that of stacking faults. Re‐dissolution experiments provoke the formation of inclusions on {100} faces, followed by an increase of the {100} growth rate by the factor of about six, relative to the neighboured {111} faces. X‐ray topographs show that this increase is correlated with the formation of dislocations, which interestingly have pure‐edge character. During further growth these dislocations penetrate the {100}‐{111} growth sector boundary and vanish from the {100} face, which slows down and finally adopts its former growth rate before re‐dissolution.     

Hydrothermal synthesis of highly symmetric 26‐facet Cu2O polyhedra

Highly symmetric 26‐facet polyhedral microcrystals of cuprous oxide (Cu₂O) are successfully synthesized through a facile low temperature hydrothermal reaction. These polyhedra are constructed by well‐developed {100}, {110} and {111} crystallographic faces. The obtained microstructures were characterized by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and Ultraviolet‐Visible (UV‐Vis) absorption spectrum. Cetyltrimethyl ammonium bromide (CTAB) and ethylenediaminetetraacetic acid disodium (EDTA‐2Na) have been confirmed to be necessary additives to the development of these perfect polyhedra. The growth process of the 26‐facet Cu₂O polyhedra is depicted on the grounds of the time‐dependent experiments. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

高温高压生长宝石级金刚石单晶的表面特征研究

本文利用高温高压温度梯度法,NiMnCo合金作为触媒,分别采用籽晶{100}和{111}作为生长面,合成了Ib型宝石级金刚石单晶,对其表面特征进行了分析和讨论.结果发现,宝石级金刚石单晶的表面特征不具有唯一性,多数情况下,晶体{111}面明显较{100}面平整,而且{100}面生长台阶的棱角不清晰,经常会出现经触媒融融过的痕迹,并且这种现象的出现跟籽晶生长面不同和合成温度条件高低无关;{111}面有时也会出现明显的生长台阶,棱角清晰,并且形状较为规则.宝石级金刚石晶体表面特征的不唯一性说明晶体表面特征对生长条件稳定性有更高的要求.     

氧化锌单晶的水热生长与结晶习性

本文应用水热生长法,采用双温区高压反应釜,黄金内衬(φ35mm ×2mm),碱性溶液矿化剂,生长出了毫米级的透明氧化锌单晶,最大单晶可达2mm ×3mm ×6mm.所生长氧化锌晶体为纤锌矿型的六方晶体,晶体呈上部锥形的六棱柱体,{10(1-)1}、{10(1-)0}和{000(1-)}面有较大的显露平面.本文中从温差和填充度方面研究了实验条件对ZnO晶体的生长及其形貌的影响,使用黄金内衬前后的结果表明,用贵金属内衬可以有效阻止釜内壁杂质的进入,使晶体完整透明.     

优质立方六面体金刚石大单晶的生长研究

高温高压静压触媒法合成的金刚石单晶,往往呈现六八面体形貌,因为立方六面体单晶{100}面的生长区间相对较小.本研究利用高温高压温度梯度法,自制Fe-Ni合金触媒,通过对合成组装和工艺进行合理调整后,控制晶体在相对低温适合{100}面生长区域内生长,得到的晶体均呈现完整立方六面体形貌;同时为抑制包裹体和其他杂质的进入,人为的提高晶体的径向平铺生长速度,抑制其轴向生长速度.以在33 h内合成的优质立方六面体晶体为例,晶体最大方向尺寸达到7.3 mm,重1.2克拉,其径向生长速度达到0.22 mm/h,轴向生长速度仅为0.08 mm/h,增重速度为7.3 mg/h.     

Single crystal synthesis and properties of lithium-gallium-, lithium-aluminium-oxide and mixed compounds (I) growing of LiGaO2-, LiAlO2- and LiAlxGa1−x crystals from fluxes

LiGaO₂ forms a single eutectic with PbO/B₂O₃ (molar ratio 9:4). A nearly linear slope of the liquidus curve is followed by a steep rise of the temperature coefficient of solubility. The solvent power at 1300°C is 0.35 g LiGaO₂/g PbO, B₂O₃; from 1000 to 1300°C there exist only poor differences in solubility of LiGaO₂ and LiAlO₂ in PbO/B₂O₃. LiGaO₂ crystals up to 1 p in weight grew spontaneously by slow cooling from fluxes or by evaporation of the solvent, those of about 1–1.5 p from seeds by cooling stirred fluxes. LiAlO₂ crystals are essentially smaller (6 mm). – By partial substitution of Ga₂O₃ by Al₂O₃ mixed crystals LiAl_xGa_1−xO₂ result. In the case of x ≦ 0.5 the coefficient of segregation remains ≦1. The al concentrations along the polar axis decrease by more than 25 p.c., perpendicular to [001] they keep constant till to the crystal surface. – Crystals show hypermorphism from mm2 to mmm. With high initial exceedings only {110} and {011}, with lower ones also {120}, {130}, {210} and {310} as well as the reduced {100}, {010} combinations are observed. – LiGaO₂ crystals grow by nucleous, sceletal or faceted growth resp. during the cooling period. – Primarily at 1270°C formed nuclei up to 1150°C grow to critical dimensions (≈0.5 mm) and develop to the main branch along [001]. Primary branches deflect to [010]. The convex secondary branches intergrow along (110), often including flux. With decreasing temperature a new crystallisation front is formed at the periphery leading to a stable faceted growth at about 1000°C.     

Microplasticity of CsI crystals

The study of the mechanisms of plastic deformation of CsI crystals has found the participation of not only the main {110} 〈100〉 slip system but also of the secondary one {110} 〈110〉. Besides that, production and motion of point defects (or small prismatic loops) take place. The gliding on secondary slip system and the deformation accounted for by the generation and motion of point defects is facilitated at low temperatures and high deformation rates. The character of the motion and multiplication of dislocations in the main slip system is investigated. From the temperature and stress dependence of the mobility of isolated dislocations quantitative data on the thermally activated motion of edge dislocations on the main slip system have been obtained. It is shown that, as in the case of other alkali halides, the thermally activated motion of edge dislocations in CsI crystals on {110} 〈100〉 system is limited by their interaction with local obstacles.     

Temperature gradient induced phase transitions and morphological changes in diamond thin film

The diamond films were deposited onto a wurtzite gallium nitride (GaN) thin film substrate using hot-filament chemical vapor deposition (HFCVD). During the film deposition a lateral temperature gradient was imposed across the substrate by inclining the substrate. As grown films predominantly showed the hexagonal phase, when no inclination was applied to the substrate. Tilting the substrate with respect to the heating filament by 6° imposed a lateral temperature gradient across the substrate, which induced the formation of a cubic diamond phase. Diamond grains were predominantly oriented in the (100) direction. However, a further increase in the substrate tilt angle to 12°, resulted in grains oriented in the (111) direction. The growth rate and hence the morphology of diamond grains varied along the inclined substrate. The present study focuses on the measurements of dominant phase formation and crystal orientation with varying substrate inclination using orientation-imaging microscopy (OIM). This technique enables direct examination of individual diamond grains and their crystallographic orientation.     

Growth Mechanism and Twinning of Sucrose Effected by Surface Adsorption Processes

Growth experiments with sucrose dependent on temperature and supersaturation of solutions were carried out to find the conditions for appearance of the three different growth types. Measurements of growth rates of {110} and {1 1 0} faces at 50°C and supersaturation c_s = 10% resulted in the known feature that in pure solutions a crystal grows faster in positive b-direction than in the negative one. Addition of raffinose stopped growth of {110}. In an electric field generated by 20 kV direct voltage (crystal orientation: negative pole of b-axis pointed towards the negative electric pole) the crystal grew in negative b-direction three times faster than in the positive one. In the presence of raffinose the growth rates in both directions become equal. If the crystal is turned by 180° in the solution (pure solution and in the presence of raffinose) the growth behaviour is the same as without an electric field. These results can be interpreted in such way that in pure solutions sucrose molecules adsorb to {1 1 0} (bonds exist between the fructose rings of molecules in liquid and solid phases) and that in presence of raffinose these molecules adsorb to {110} (bonds exist between glucose (solid) and galactose rings (liquid phases)). By the electric field the adsorption is hindered. The theory is in accordance with the fact that crystals situated in a suspension of the solution can intergrow with a host crystal in twin positions (in pure solutions on {1 1 0} and in the presence of raffinose on {110}).     

HFCVD法沉积金刚石薄膜中热丝优化方法

本文探讨了在HFCVD(hot filament chemical vapor deposition)沉积金刚石薄膜中热丝数量、位置等几何参数对温度场和辐射场的影响.利用系统热传递模型和计算机辅助的数值解方法得到了该方法沉积大面积金刚石薄膜中衬底表面温度分布和热辐射能量密度分布.发现金刚石薄膜的均匀性受热辐射能量密度分布影响较大.进一步给出了沉积面积为100mm×100mm的金刚石薄膜的最佳参数.