Effect of Gate Electric Field on Single Organic Molecular Devices (cited: 3)

Based on the first-principles computational method and elastic scattering Green's function theory, we have investigated the effect of gate electric field on electronic transport properties of a series of single organic molecular junctions theoretically. The numerical results show that the molecular junctions that have redox centers and relatively large dipole moments parallel gate direction can respond to the gate electric field remarkably. The current-voltage properties of 2,5-dimethyl-thiophene-dithiol present N-channel-metal-oxide-semiconductor-like characteristics. Its distinct current-voltage properties can be understood from the evo-lution of eigenvalues, coupling energies, and atomic charges with gate electric field.     

A Molecular Photosensor Based on Photoswitching of Charge Carrier Mobility

Polymer photoelectronic device based on interaction between π-conjugated polymer matrices and photochromic molecules was fabricated. The theoretical and experimental studies proved that the photochromic reaction in studied devices should eventuate in changes of optical and electrical properties of polymers such as luminescence and conductivity. The quantum chemical calculations showed that the presence of dipolar species in the vicinity of a polymer chain modifies the on-chain site energies and consequently increases the width of the distribution of hopping transport states. Optical switching was studied using standard absorption and photoluminescence spectroscopy. A strong photoluminescence quenching after the photochromic conversion caused by radiative energy transfer was observed. The influence of photoswitchable charge carrier traps on charge transport were evaluated by Space Charge Limited Current (SCLC) method. It was shown that deep traps may significantly affect the energy of the transport level, and thus modulate the transport of charge carriers.     

CdS敏化对TiO2纳米薄膜电极光生电荷转移特性的影响

1991年Gratzel等[1]以敏化的TiO2纳米薄膜电极组成的液体结光电化学太阳能电池(PEC),其光电转换效率(IPCE)达到10%. 最近,选用固态电解质使这种PEC的IPCE达到33%[2].于是用有机染料[3,4]及窄带隙半导体纳米微粒[5]敏化的电极受到了广泛关注.     

Optically Triggered Control of the Charge Carrier Density in Chemically Functionalized Graphene Field Effect Transistors

Field effect transistors (FETs) based on 2D materials are of great interest for applications in ultrathin electronic and sensing devices. Here we demonstrate the possibility to add optical switchability to graphene FETs (GFET) by functionalizing the graphene channel with optically switchable azobenzene molecules. The azobenzene molecules were incorporated to the GFET channel by building a van der Waals heterostructure with a carbon nanomembrane (CNM), which is used as a molecular interposer to attach the azobenzene molecules. Under exposure with 365 nm and 455 nm light, azobenzene molecules transition between cis and trans molecular conformations, respectively, resulting in a switching of the molecular dipole moment. Thus, the effective electric field acting on the GFET channel is tuned by optical stimulation and the carrier density is modulated.     

Direct Observation of the Electroadsorptive Effect on Ultrathin Films for Microsensor and Catalytic‐Surface Control

Microchemical sensors and catalytic reactors make use of gases during adsorption in specific ways on selected materials. Fine‐tuning is normally achieved by morphological control and material doping. The latter relates surface properties to the electronic structure of the bulk, and this suggests the possibility of electronic control. Although unusual for catalytic surfaces, such phenomena are sometimes reported for microsensors, but with little understanding of the underlying mechanisms. Herein, direct observation of the electroadsorptive effect by a combination of X‐ray photoelectron spectroscopy and conductivity analysis on nanometre‐thick semiconductor films on buried control electrodes is reported. For the SnO₂/NO₂ model system, NO₃ surface species, which normally decay at the latest within minutes, can be kept stable for 1.5 h with a high coverage of 15 % under appropriate electric fields. This includes uncharged states, too, and implies that nanoelectronic structures provide control over the predominant adsorbate conformation on exterior surfaces and thus opens the field for chemically reactive interfaces with in situ tunability.     

有机半导体薄膜空间电荷分布对晶体管性能影响的研究进展

有机场效应晶体管(OFETs)是下一代柔性电子产业的基础元件,具有可弯曲、透明、低成本、可溶液加工等优良特性,并逐渐开始应用于生物传感器、柔性显示等领域。 然而,OFETs仍存在如工作电流小、跨导小、开关比低、空气稳定性差等问题,限制了其进一步的发展。 OFETs器件的性能主要受到导电沟道中电荷和电流分布的影响,若能通过外加手段,调控沟道中的电荷和电流分布,可能获得具有更高性能或新机理的器件。 本文结合课题组内的工作,对国内外该领域的最新进展进行综述和展望。     

Reversibly Switching the Charge State and Adsorption Location of A Single Potassium Atom on Ultrathin CuO Films

Potassium (K) cations are spontaneously formed upon thermal deposition of low‐coverage K onto an ultrathin CuO monolayer grown on Cu(110) and they were explored by low‐temperature scanning tunneling microscopy (STM) and X‐ray photoemission spectroscopy. The formed K cations are highly immobile and thermally stable. The local work function around an individual K cation decreases by 1.5±0.3 eV, and a charging zone underneath it is established within about 1.0 nm. The cationic and neutral states of the K atom are switchable upon application of an STM bias voltage pulse, which is simultaneously accompanied by an adsorption site relocation.     

Investigation of the Effect of Substituents on Electronic and Charge Transport Properties of Benzothiazole Derivatives

A series of new benzothiazole-derived donor–acceptor-based compounds (Comp1–4) were synthesized and characterized with the objective of tuning their multifunctional properties, i.e., charge transport, electronic, and optical. All the proposed structural formulations (Comp1–4) were commensurate using FTIR, ¹H NMR, ¹³C NMR, ESI-mass, UV–vis, and elemental analysis techniques. The effects of the electron-donating group (-CH₃) and electron-withdrawing group (-NO₂) on the optoelectronic and charge transfer properties were studied. The substituent effect on absorption was calculated at the TD-B3LYP/6-31+G** level in the gas and solvent phases. The effect of solvent polarity on the absorption spectra using various polar and nonpolar solvents, i.e., ethanol, acetone, DMF, and DMSO was investigated. Light was shed on the charge transport in benzothiazole compounds by calculating electron affinity, ionization potential, and reorganization energies. Furthermore, the synthesized compounds were used to prepare thin films on the FTO substrate to evaluate the charge carrier mobility and other related device parameters with the help of I-V characteristic measurements.     

Synthesis of Oligo(thienylfuran)s with Thiophene Rings at Both Ends and Their Structural,Electronic, and Field‐Effect Properties

Oligo(thienylfuran)s with thiophene rings at both ends ( SOSOSOS , DE‐SOSOS , DH‐SOSOS , DE‐SOSOSOS , and DH‐SOSOSOS ; S and O denote thiophene and furan rings, respectively, DE and DH denote diethyl‐ and dihexyl‐substituted, respectively) were newly synthesized by repetitive Stille coupling reactions. The UV/Vis maximum absorptions of the oligomers, SO , SOSO , SOSOS , SOSOSO , and SOSOSOS , exhibited a clear bathochromic shift with increasing number of heterocycles. The value of the oxidation peak potential (E_pa¹) determined by cyclic voltammetry decreased with an increase in the number of heterocycles by 0.06–0.08 V per heterocycle. The crystal‐packing structures of DE‐SOSOS and DH‐SOSOS determined by X‐ray crystallography have a herringbone motif and are denser than the reported structures of pentacene and α‐sexithiophene. The morphologies of thin films prepared by vacuum deposition and spin coating were investigated by atomic force microscopy and X‐ray diffraction. Among these films, those of DE‐SOSOS and DH‐SOSOS exhibited highly ordered arrangements. The devices based on vacuum‐deposited and spin‐coated films of DE‐SOSOS and DH‐SOSOS displayed the highest FET mobilities of 10^?2–10^?3 cm² V^?1 s^?1 among the oligomers reported in this study.     

Effect of Crystallization Kinetics on Microstructure and Charge Transport of Polythiophenes

We have examined the effects of crystallization kinetics of poly(3‐hexylthiophene) and poly[2,5‐bis(3‐hexadecylthiophen‐2‐yl)thieno(3,2‐b)thiophene] on microstructure and charge transport. Rapid crystallization increases the density of tie molecules in polythiophenes. As a consequence, ordered regions are better connected resulting in higher charge carrier mobilities. Our results suggest that controlling the crystallization kinetics might be an important factor for maximizing the charge mobility in semicrystalline polythiophene thin films.     

Influence of Precursor Chemistry on the Formation of MTiO3 (M = Ba,Sr) Ceramic Thin Films

Thin films of BaTiO3 and SrTiO3 were prepared by a chemical solution deposition method. The impact of the precursor on the processing, on the microstructure, and on the dielectric properties has been studied by systematically varying the alkyl chain length of the used Ba- and Sr-carboxylates. In addition, the effect of stabilizing the Ti-alkoxide precursor by acetylacetone has been investigated. The decomposition process, the crystallization behavior, and the film morphology were analyzed by glancing incidence XRD, reflectance FT-IR and field emission SEM. Distinct precursor effects on the thin film morphology and properties were revealed. Part of this influence can be attributed to an intermediate complex carbonate phase which forms for selected carboxylates with short alkyl chains. The high transformation temperature of this intermediate phase to the perovskite obviously has a marked influence on the crystallization and densification process of the alkaline earth titanate thin films. We correlate the morphological differences of the films to their dielectric properties.     

Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor

The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach. In the case of faster saturation as well as extremely high transit frequency, the graphene field effect transistor shows outstanding performance. From the transfer curve, it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior. Besides, it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2 μm and 5 μm respectively. Furthermore, an approximate symmetrical capacitance-voltage (\begin{document}$C-V$\end{document}) characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width. In addition, a high transconductance, that demands high-speed radio frequency (RF) applications, of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5 μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.     

A Spray‐Based Technique for the Production of MnS Thin Films

A spray‐based technique, originally developed for the production of semiconductor nanocrystals, is utilized for the preparation of high‐quality nanocrystalline thin films, as demonstrated with manganese sulfide. The films are formed by the use of pneumatic‐assisted thermospray or pneumatic nebulizers. Our simple, low‐cost, and low‐temperature process results in a dense and phase‐pure grain structure. The concepts and benefits of this technique are described and discussed. The film characteristics show dependence on the experimental parameters, in particular the rate of solvent vaporization. Three alternative film formation mechanisms are suggested for cases with varied experimental conditions.     

Effect of Glass Substrates on the Formation of Gold-Silver Colloids in Nanocomposite Thin Films

A sol-gel route to synthesize nanocomposite thin films containing phase separated metal colloids of gold (Au) and silver (Ag) was developed. Ag—Au colloids were prepared in silica films using dip coating technique. The annealing of the samples in air results in the formation of phase separated Ag and Au colloids in SiO₂ thin films, showing the surface plasmon peaks at 410 nm and 528 nm. For the synthesis of phase separated Ag and Au colloids on float glass substrates, formation of the silver colloids was found strongly dependent on the surface of the float glass. On the tin rich surface formation of both gold and silver colloids took place, whereas, on the tin poor surface the formation of only gold colloids was observed. The surface dependence of the formation of silver colloids was attributed to the presence of tin as Sn²⁺ state on the glass surface, which oxidizes into Sn⁴⁺ during heat treatment, reducing Ag⁺ into silver colloids.     

An Investigation into the Optimum Thickness of Titanium Dioxide Thin Films Synthesized by Using Atmospheric Pressure Chemical Vapour Deposition for Use in Photocatalytic Water Oxidation

Twenty eight films of titanium dioxide of varying thickness were synthesised by using atmospheric pressure chemical vapour deposition (CVD) of titanium(IV) chloride and ethyl acetate onto glass and titanium substrates. Fixed reaction conditions at a substrate temperature of 660 °C were used for all depositions, with varying deposition times of 5–60 seconds used to control the thickness of the samples. A sacrificial electron acceptor system composed of alkaline sodium persulfate was used to determine the rate at which these films could photo‐oxidise water in the presence of 365 nm light. The results of this work showed that the optimum thickness for CVD films on titanium substrates for the purposes of water oxidation was ≈200 nm, and that a platinum coating on the reverse of such samples leads to a five‐fold increase in the observed rate of water oxidation.     

Synthesis and Properties of Semiconducting Bispyrrolothiophenes for Organic Field‐Effect Transistors

A series of new highly soluble bispyrrolothiophenes were synthesized from vinyl azides by using transition‐metal‐catalyzed C?H‐bond functionalization. In addition to modifying the substituents present on the end‐pyrrolothiophene moieties, the arene linker in between the two units was also varied. The solution‐state properties and field‐effect‐transistor (FET) electrical behavior of these bispyrrolothiophenes was compared. Our investigations identified that the optical properties and oxidation potential of our compounds were dominated by the pyrrolothiophene unit with a λ_max value of approximately 400 nm and oxidation at approximately 1 V. FET devices constructed with thin films of these bispyrrolothiophenes were also fabricated by means of thin‐film solution processing. One of these compounds, a bispyrrolothiophene linked with benzothiodiazole, exhibits a mobility of approximately 0.3 cm² V^?1 s^?1 and the I_on/I_off value is greater than 10⁶.     

Superspreading on Immersed Gel Surfaces for the Confined Synthesis of Thin Polymer Films

Liquid spreading is of significant interest in science and technology. Although surface topography engineering and liquid surface‐tension regulating can facilitate spreading, the spreading layers in these strategies are inevitably inhomogeneous or contaminated with surfactants. Herein, we show a general strategy to realize the superspreading of liquids on mutually soluble gel surfaces. The cooperation of the hydraulic pressure under liquid phase and liquid‐like property of gel surfaces can dramatically eliminate the local pinning effect and enhance the advancement of three‐phase contact line, thus forming stable and homogeneous superspreading liquid layers. Such liquid layers can be converted into various functional thin polymer films with controlled thicknesses (nm‐ to µm‐scale) through one‐step polymerization of the reactants. Our strategy offers opportunities for large‐scale synthesis of versatile functional thin films for various applications.     

Effect of Film Thickness on the Columnar Packing Structures of Discotic Supramolecules in Thin Films

The effects of film thickness on the columnar packing structure of discotic supramolecules in a thin supported film have been investigated by grazing‐incidence small‐angle X‐ray scattering technique using magnetically aligned cobalt octa(n‐decylthio)porphyrazine (CoS10) films on octadecyltrichlorosilane (OTS)‐functionalized substrates as model systems. Magnetically aligned CoS10 films with a range of film thicknesses (49–845 nm) form uniaxially oriented ‘edge‐on’ columnar superstructures with their columnar directors perpendicular to the applied magnetic field. However, the orientational ordering of the columnar packing in the plane perpendicular to the applied magnetic field is strongly dependent on the film thickness. While being damped by the elasticity of the side chains of CoS10, the strong interfacial interaction at the film‐substrate interface propagates up to 50–100 nm from the substrate, maintaining the orientation of columnar packing in the plane perpendicular to the applied magnetic field. When the distance from the film‐substrate interface becomes larger than about 100 nm, symmetric tilting of columnar layer orientation, which saturates at 11.5°, occurs due to longitudinal edge dislocations induced by accumulated elastic deformation.