Electrical characteristics and efficiency of organic light-emitting diodes depending on hole-injection layer

In a device structure of ITO/hole-injection layer/N,N′-biphenyl-N,N′-bis-(1-naphenyl)-[1,1′-biphthyl]4,4′-diamine(NPB)/tris(8-hydroxyquinoline)aluminum(Alq₃)/Al, we investigated the effect of the hole-injection layer on the electrical characteristics and external quantum efficiency of organic light-emitting diodes. Thermal evaporation was performed to make a thickness of NPB layer with a rate of 0.5–1.0 Å/s at a base pressure of 5 × 10⁻⁶ Torr. We measured current–voltage characteristics and external quantum efficiency with a thickness variation of the hole-injection layer. CuPc and PVK buffer layers improve the performance of the device in several aspects, such as good mechanical junction, reducing the operating voltage, and energy band adjustment. Compared with devices without a hole-injection layer, we found that the optimal thickness of NPB was 20 nm in the device structure of ITO/NPB/Alq₃/Al. By using a CuPc or PVK buffer layer, the external quantum efficiencies of the devices were improved by 28.9% and 51.3%, respectively.     

Synthesis and luminescence properties of tris(4-tridecyl-8-quinolinolato)aluminum

We have designed and successfully synthesized an alkylated aluminum quinoline derivative, tris(4-tridecyl-8-quinolinolato)aluminum (TDALQ), which could be used as an emitting material for solution-processible OLEDs. The synthesized material was identified by ¹H NMR, IR and FAB-mass spectroscopy. To evaluate electroluminescent properties, TDALQ was spin-cast to fabricate thin film as an emitting layer on ITO/PEDOT substrate and LiF/Al double layer was used as electron injection electrode. The EL device showed a green light emission at 509 nm with CIE chromaticity coordinates of (0.31, 0.52). TDALQ made by a spin-coating method showed good film properties in AFM.     

Highly efficient and stable organic light-emitting diode by balancing drift current of charge

Highly efficient and stable OLED device in which hole-drift current and electron-drift current are balanced was fabricated. Drift current characteristics according to the thickness of organic layer were examined using the device with ITO/m-MTDATA/NPB/Al structure that can only move the hole and the device with Al/LiF/Alq₃/LiF/Al structure that can only move the electron. Using the result of such examination, green device with balanced drift current was produced. Device with the structure of m-MTDATA (80 nm)/NPB (20 nm)/C-545T (3%) doped Alq₃ (5 nm)/Alq₃ (59 nm)/LiF (1 nm)/Al (200 nm) showed color purity of (0.309, 0.643) and high efficiency of 7.0 lm/W (14.4 cd/A). Most of light emission was observed inside the green emitting layer. Through the result of EL spectrum for the device also including red emitting layer, same result could be obtained. The device with balanced drift current also showed half life-time of 175 h for initial luminance of 3000 cd/m², which is more stable in comparison to the device without balanced drift current.     

Novel UV-emitting single crystalline film phosphors grown by LPE method

This work reports the development of new types of UV-emitting phosphors based on single crystalline films (SCF) of aluminum garnet and perovskite compounds grown by the liquid phase epitaxy method. We consider peculiarities of the growth and the luminescent and scintillation properties of the following four types of UV SCF phosphors: i) Ce-doped SCF of Y–Lu–Al-perovskites with the Ce³⁺ emission in the 300-450 nm range of the decay time of 16–17 ns; ii) Pr-doped SCF of Y–Lu–Al garnets and perovskites with the Pr³⁺ emission in the 300–400 nm and 235–330 nm ranges with the decay time of 13–19 and 7–8 ns, respectively; iii) La³⁺ or Sc³⁺ doped SCF of Y–Lu–Al-garnets, emitting in the 280-400 nm range due to formation of the La_Y,Lu, Sc_Y,Lu and Sc_Al centers with decay time of the order of several hundreds of nanoseconds; iv) Bi³⁺ doped SCF of garnets with Bi³⁺ emission in 275–350 nm with decay time of about 1.9 μs.     

Achieving desired quality of ZnS buffer layer by optimization using air annealing for solar cell applications

The possibility of maximum transmittance at lower thickness of light transmitting ZnS layer and its optimization by air-annealing as an alternative to hazardous and expensive CdS is reported in this communication in order to achieve better buffer layer for solar cells. Thin films of ZnS were deposited using e-beam evaporation on glass and ITO substrates and subjected to air-annealing followed by characterizations for physical properties. XRD patterns revealed amorphous behavior which transformed into cubic (111) plane with change of substrate and annealing whereas surface topography reveals hill and deep valley like structures. Optimal transmittance of maximum 95% in visible region, direct band gap of 3.38 eV and maximum electrical conductivity were observed for 200 °C annealed films. The study refers that films annealed at 200 °C are claimed to be suitable for buffer layer applications.     

Model and simulation on the efficiencies of microcavity OLEDs

This paper presents simple calculation models of the external quantum efficiency and power efficiency for the microcavity OLEDs. The models take into account the energy spatial distribution of the device and provide a rough estimate of the efficiencies for the planar surface emitting devices, by which the integrating sphere and monochrometer were saved. The external quantum efficiency and luminous current efficiency from the structures of glass/DBR/ITO/NPB/Alq: C545T/Alq/LiF/Al and glass/ITO/NPB/Alq: C545T/Alq/LiF/Al were calculated based on these models and the measured data. Comparing with conventional OLED, the external quantum efficiency and luminous current efficiency of the MOLED were improved 3.1% and 8% at low current density (< 10 mA/cm², corresponding to the display brightness range), respectively.     

Emission characteristics of SPAN-80 activated ZnS nanocolloids

Quantum surface effects (new emission bands, blueshifts, intensity enhancement) were observed in SPAN-80 activated ZnS nanocolloids and explained in terms of time-dependent density functional theory. The experimental evidences were demonstrated for both undoped and Cu, Mn-doped colloidal phases. The photoluminescence spectra of these materials showed a new green band at 520 nm (ZnS:Cu) and a yellow-orange band at 576 nm (ZnS:Mn) besides a blue band at 465 nm. All bands lie in the visible region and are blueshifted, show sharp emissions with narrow widths and have approximately 20-times stronger intensities in comparison with those of the bulk samples. The time-resolved luminescence spectra showed that the life-times of free electrons were 0.12 μs and 1.9 ms in ZnS:Cu and ZnS:Mn correspondingly.     

The effect of Ag layer thickness on the properties of WO3/Ag/MoO3 multilayer films as anode in organic light emitting diodes

Transparent conductive WO₃/Ag/MoO₃ (WAM) multilayer electrodes were fabricated by thermal evaporation and the effects of Ag layer thickness on the optoelectronic and structural properties of multilayer electrode as anode in organic light emitting diodes (OLEDs) were investigated using different analytical methods. For Ag layers with thickness varying between 5 and 20 nm, the best WAM performances, high optical transmittance (81.7%, at around 550 nm), and low electrical sheet resistance (9.75 Ω/cm²) were obtained for 15 nm thickness. Also, the WAM structure with 15 nm of Ag layer thickness has a very smooth surface with an RMS roughness of 0.37 nm, which is suitable for use as transparent conductive anode in OLEDs. The current density?voltage?luminance (J?V?L) characteristics measurement shows that the current density of WAM/PEDOT:PSS/TPD/Alq₃/LiF/Al organic diode increases with the increase in thickness of Ag and WO₃/Ag (15 nm)/MoO₃ device exhibits a higher luminance intensity at lower voltage than ITO/PEDOT:PSS/TPD/Alq₃/LiF/Al control device. Furthermore, this device shows the highest power efficiency (0.31 lm/W) and current efficiency (1.2 cd/A) at the current density of 20 mA/cm², which is improved 58% and 41% compared with those of the ITO-based device, respectively. The lifetime of the WO₃/Ag (15 nm)/MoO₃ device was measured to be 50 h at an initial luminance of 50 cd/m², which is five times longer than 10 h for ITO-based device.     

Near-white emitting QD-LED based on hydrophilic CdS nanocrystals

In this work we report fabrication of a nanocrystal (NC)-based hybrid organic–inorganic LED with structure of ITO/PEDOT:PSS/PVK/CdS-NCs/(Al or Mg:Ag). The hydrophilic CdS NCs were synthesized using a novel aqueous thermochemical method at 80 °C and sizes (around 2 nm) were controlled by thioglycolic acid (TGA) as the capping agent. The favorite feature of these NCs is their relatively high emission intensity and broad, near-white emission. The hydrophilic CdS NCs were successfully spin coated using Triton X-100 as the wetting agent. The fabricated LEDs demonstrated a turn on voltage about 7 V for Al metallic contact. The electroluminescence was a broad spectrum at 540 and 170 nm width, which was about 50 nm red shifted compared to photoluminescence spectra. The CIE color coordinates of the LED at (0.33, 0.43) demonstrated a near white light LED with an emission on green–yellow boundary of white. Annealing of the device up to 190 °C had a positive effect on the performance, possibly due to better contacts between layers. Replacing Al contacts with Mg:Ag reduced the turn-on voltage to 6 V and changed CIE color coordinate to (0.32, 0.41). The EL peak was also shifted to 525 nm, with a brightness of 15 Cd/m² at working voltage of 15 V. The current efficiency and external quantum efficiency of device were 0.08 Cd/A and 0.03% at current densities higher than 10 mA/cm².     

A proposed organic Schottky barrier photodetector for application in the visible region

The fabrication and characterization of an organic photodetector (OPD) in the form of ITO coated glass/polycarbazole (PCz)/Al Schottky contact is reported. The device has been fabricated in our laboratory for the first time using the polymer synthesized by us. The device has been subsequently characterized in respect of electrical and optical properties in order to explore its potential for possible use as a detector in the visible region at 650 nm. It is observed that the detector exhibits a reasonably high value of peak detectivity (∼6 × 10⁶ cm Hz^1/2 W⁻¹) near zero bias voltage at V = 0.2 V.     

Concentration quenching of Eu2+ in a thermal-stable yellow phosphor Ca2BO3Cl:Eu2+ for LED application

A piece-shaped phosphor Ca₂BO₃Cl: Eu²⁺ was synthesized by solid-state reaction method. This phosphor exhibited wide absorption in ultra-violet and visible range, and bright yellow emission band centering at 570 nm. The concentration quenching mechanism was verified to be a dipole–dipole interaction, and its critical transfer distance was about 17 Å by both calculated crystal structural method and experimental spectral method. This phosphor has a good thermal stability with a quenching temperature (T_1/2) of 200 °C. Yellow and white LEDs were fabricated with this phosphor and near UV chips, and the yellow LED has a high color purity of 97.0% and promising current tolerant property, while the white LED shows a luminous efficiency of 11.68 lm/W.     

Tetraalkoxylated-PPV derivative: An efficient and pure green electroluminescent polymer with good solution processability

A new solution-processable tetraalkoxy-substituted poly(1,4-phenylenevinylene) derivative, poly{[2-(3′,7′-dimethyloctyloxy)-3,5,6-trimethoxy]-1,4-phenylenevinylene} (TALK-PPV), was synthesized through a dehydrohalogenation polymerization route, and its light-emitting properties were investigated. The TALK-PPV showed highly blue-shifted UV–visible absorption and PL emission spectra compared to the dialkoxy-substituted PPV derivatives. This is because of the disturbance to the π-conjugation caused by a steric hindered structure. The TALK-PPV thin film exhibited an absorption peak at 446 nm, with an onset at 515 nm. Its PL emission maximum was at 554 nm. Cyclic voltammetric analysis showed the HOMO and LUMO energy levels of the TALK-PPV to be 5.77 and 3.36 eV, respectively. Light-emitting devices were fabricated with an ITO (indium-tin oxide)/PEDOT/polymer/Ca/Al configuration. The TALK-PPV component leads to pure green light emission with a CIE 1931 chromaticity of (0.20, 0.74) at 100 cd/m² brightness, which is very close to the standard green (0.21, 0.71) demanded by the NTSC (National Television System Committee). The maximum brightness of this device was 24,900 cd/m² with an efficiency of 1.45 cd/A.     

Effect of thin aluminum interlayer on growth and microstructure of carbon nanotubes

The aluminum (Al) interlayer with various thicknesses ranging from 0.75 to 6 nm was deposited on silicon (Si) substrates prior to the deposition of ultra-thin iron (Fe) catalyst for the growth of carbon nanotubes. In this paper we report the effect of ultra-thin Al interlayer on the growth of multiwalled carbon nanotubes (MWCNTs). The SEM was used to examine the microstructures of nanotubes. We observed as the Al interlayer thickness increases the height of nanotube decreases. Raman spectra of MWCNT showed typical D and G peaks at ∼1345 cm⁻¹ and ∼1575 cm⁻¹, respectively. The XPS revealed the presence of Al and Fe on the top of CNT surface which were further supported by TEM. The high resolution TEM results also revealed bamboo like CNTs with diameter ∼10–40 nm.     

RGB tricolor produced by white-based top-emitting organic light-emitting diodes with microcavity structure

RGB pixels by microcavity top-emitting organic light-emitting diode (TOLED) is beneficial to both minimizing the loss of light and improving the color purity and the efficiency. Based on the multi-emitting layers, white organic light-emitting diodes (OLEDs) and microcavity TOLEDs were prepared. TOLEDs were fabricated using Ag/ITO as the reflector and adjusting layer, Al/Ag as semi-transparent cathode, Alq:DCJTB/TBADN:TBPe/Alq:C545 as white light emitting layer. By adjusting the thickness of ITO, optical length of cavity and the color of the device have been changed. So we get RGB tricolor devices. The peak wavelengths are 476 nm, 539 nm, 601 nm, Commission Internationale d’Eclairage (CIE) coordinates are (0.133, 0.201), (0.335, 0.567), (0.513, 0.360), FWHM are 32 nm, 50 nm, 73 nm for blue, green and red, respectively.     

Influence of thickness of functional layer on performance of organic salt-doped OLED with ITO/PVK:PBD:TBAPF6/Al structure

The effect of thickness of functional layer on the electrical and electroluminescence (EL) properties of single-layer OLED with ITO/PVK:PBD:TBAPF₆/Al structure were investigated where indium tin oxide (ITO) was used as anode, poly(9-vinylcarbazole) (PVK) as polymeric host, 2-(4-biphenylyl)-5-phenyl-1,3,4-oxadiazole (PBD) as electron-transporting molecule, tetrabutylammonium hexafluorophosphate (TBAPF₆) as organic salt dopant and aluminium (Al) as cathode. A unique transition phenomenon at high bias voltage in the devices was observed and the transition was reversible. The transition voltage and turn on voltage decreased with the decrease of functional layer thickness. The turn on voltage was approximately 5.5 V and 6.5 V for 55-nm-thick and 95-nm-thick devices, respectively. However, the current efficiency of 95-nm-thick device was higher than the 55-nm-thick device. More interestingly, the Commission Internationale d’Eclairage (C.I.E.) coordinates of EL spectra of 95-nm-thick device at bias voltage ranging from 7 V to 13 V located in the white light region even without any dye doping. The PL and EL spectra were found completely different. PBD electromer was proposed to dominate the EL spectrum, but the contribution from PVK–PBD electroplex cannot be completely ruled out.     

Blue emission in Eu2+ activated MgXAl10O17 (X = Sr,Ca) phosphors

Here we reported photoluminescence properties of Eu²⁺ activated in novel and existing MgXAl₁₀O₁₇ (X = Sr, Ca) phosphor which has been prepared by combustion synthesis at 550 °C under UV and near UV excitation wavelength. The PL emission properties of MgSrAl₁₀O₁₇:Eu²⁺ were monitored at 254 nm and 354 nm respectively keeping emission wavelength at 469 nm. Whereas novel MgCaAl₁₀O₁₇:Eu²⁺ exhibit emission band at 452 nm keeping excitation at 378 nm. These blue emission corresponds to 4f⁶5d¹ → 4f⁷ transition of Eu²⁺ ions. Further phosphor was analyzed by XRD for the confirmation of desired phase and purity.     

Synthesis and characterization of PPV-based light-emitting copolymer with alkylsilylphenyloxy pendant group for light-emitting diode applications

A novel light-emitting copolymer with high brightness and luminance efficiency was synthesized using the Gilch polymerization method, and its electro-optical properties were investigated. A polymer light-emitting diode (PLED) was fabricated in ITO/PEDOT/light-emitting copolymer/Ca/Al configuration. The turn-on voltage of the PLED was about 5.0 V with maximum brightness and luminance efficiency up to 1420 cd/m² at 16.2 V and 0.5 cd/A at 6.8 V, respectively.     

Spectral structure of barium–phosphate–silicate phosphor Ba10(PO4)4(SiO4)2:EuM+

The new apatite–silicate phosphor doped with Eu ions in Ba₁₀(PO₄)₄(SiO₄)₂ matrix was synthesized through solid-state reaction. It was found that the as-synthesized phosphor displayed apparent mixture of band and line emission peaks giving rise to pseudo white light. The narrow emission bands peaking at 410 nm can be assigned to the 4f⁶5d→4f⁷(⁸S_7/2) transition of Eu²⁺ ions, and the other band at 507 nm is ascribed to anomalous fluorescent emission. One group of line emission peaking at 595 nm and 613 m were due to the ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ions. The occurrence of photostimulated luminescence and discrete emission lines in violet (410 nm), green (507 nm) and red (595 nm and 613 nm) colors indicate that this material has potential application in fields of white-light-emitting.     

Sound insulation property of Al–Si closed-cell aluminum foam sandwich panels

Al–Si closed-cell aluminum foam sandwich panels (1240 mm × 1100 mm) of different thicknesses and different densities were prepared by molten body transitional foaming process in Northeastern University. The experiments were carried out to investigate the sound insulation property of Al–Si closed-cell aluminum foam sandwich panels of different thicknesses and different densities under different frequencies (100–4000 Hz). Results show that sound reduction index (R) is small under low frequencies, large under high frequencies; thickness affects the sound insulation property of material obviously: when the thicknesses of Al–Si closed-cell aluminum foam sandwich panels are 12, 22, and 32 mm, the corresponding weighted sound reduction indices (R_W) are 26.3, 32.2, and 34.6 dB, respectively, the rising trend tempered; the increase of density of Al–Si closed-cell aluminum foam can also increase the sound insulation property: when the densities of aluminum foam are 0.31, 0.51, and 0.67 g/cm³, the corresponding weighted sound reduction indices (R_W) are 28.9, 34.3, and 34.6 dB, the increasing value mitigating.     

High quality nitrogen-doped zinc oxide thin films grown on ITO by sol–gel method

Highly transparent N-doped ZnO thin films were deposited on ITO coated corning glass substrate by sol–gel method. Ammonium nitrate was used as a dopant source of N with varying the doping concentration 0, 0.5, 1.0, 2.0 and 3.0 at%. The DSC analysis of prepared NZO sols is observed a phase transition at 150 °C. X-ray diffraction pattern showed the preferred (002) peak of ZnO, which was deteriorated with increased N concentrations. The transmittance of NZO thin films was observed to be ~88%. The bandgap of NZO thin films increased from 3.28 to 3.70 eV with increased N concentration from 0 to 3 at%. The maximum carrier concentration 8.36×10¹⁷ cm⁻³ and minimum resistivity 1.64 Ω cm was observed for 3 at% N doped ZnO thin films deposited on glass substrate. These highly transparent ZnO thin films can be used as a window layer in solar cells and optoelectronic devices.