Growth and optical properties of ZnO microwells by chemical vapor deposition method

The well-like ZnO nanostructures were obtained by chemical vapor deposition method. The uniform and dense ZnO slim nano-columns were grown along the circle to form a microwell. The growth mechanisms, such as 1D linear, 2D screw dislocation and step growth are discussed. These observations provide some insight into the growth kinetics in vapor-solid growth process. The fabrication of ZnO microwell morphology provided a direct experimental evidence for explaining the 1D growth mechanism based on the axial screw dislocation. Photoluminescence (PL) microscopy showed the surface-related optical properties. The green light emission enhancement revealed that the ZnO microwells have waveguide properties. The abnormal enhancement of integrated PL intensity of deep-level emission with temperature increase showed abundant surface state existence.     

Formation of pits during growth of Si/Ge nanostructures

Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds with Si atoms are formed. Appropriate growth conditions can suppress or enhance the pit formation effect and consequently a new type of self-organized nanostructures can be formed.     

New method to induce 2D–3D transition of strained CdSe/ZnSe layers

We present new growth conditions for growing high-quality CdSe/ZnSe quantum dots with photoluminescence emission measurable up to room temperature. The surface morphology is characterized in situ by Reflective High Energy Electron Diffraction (RHEED). The key point is the introduction of a new step in the growth process using amorphous selenium to induce a 2D–3D transition of a CdSe strained layer on ZnSe to form the dots. Optical characterizations by photoluminescence of CdSe/ZnSe quantum dots obtained that way, as well as X-ray diffraction results are also discussed here.     

STM study of di-indenoperylene molecules on Cu(1 0 0) surfaces: Mobility, stability and epitaxy

We report a detailed study of the self-assembly process of di-indenoperylene (DIP) on Cu(1 0 0) surfaces, investigated by variable temperature scanning tunneling microscopy (STM) under ultrahigh vacuum (UHV) conditions. During the initial growth stages a preferred nucleation at the step edges is revealed. Subsequently, large ordered 2D islands grow from the step edges, while smaller 2D islands form on the terrace sites. The equilibrium fluctuation of these 2D clusters has been monitored in real-time, thereby obtaining a direct insight into the temperature dependence of the molecular surface diffusion. The substrate–adsorbate interactions determine the azimuthal molecular orientation, finally lead to the formation of highly ordered chiral domains which are commensurate with the substrate.     

Surface roughening by anisotropic adatom kinetics in epitaxial growth of La0.67Ca0.33MnO3

The growth mechanisms and surface morphology of colossal magnetoresistance (CMR) La_0.67Ca_0.33MnO₃ films deposited by rf magnetron sputtering on SrTiO₃(0 0 1) substrates are investigated. The films are epitaxial, coherently strained and ferromagnetic. It is found that at early growth stages, in nanometric films, a layer-by-layer mechanism dominates, which results in step and terrace surface morphology. Upon further growth, the flat surface becomes unstable when large two-dimensional (2D) islands form. The Erlich-Schwoebel step-edge energy barrier induces an anisotropic adatom kinetics that favors 2D nucleation on top of the islands as it reduces downhill adatom current. As a result, there is an evolution with growth to mound-like structures of increasing height. Critical thickness for mound formation and average mound separation can be tuned by substrate miscut angle and growth temperature. These results provide a detailed understanding of the roughening process in manganites and are relevant for the controlled fabrication of CMR films, in particular for its use in epitaxial heterostructures.     

Exchange processes in interlayer diffusion – kinks, corners and the growth mode

Interlayer diffusion, i.e. mass transport between different terraces, is known to be an essential process for obtaining layer-by-layer growth, avoiding formation of three-dimensional (3D) islands when growing thin films. We present experimental results for the growth of cobalt on Pt (111), which demonstrate the importance of kinks and corners for interlayer diffusion. We show that Co grows two-dimensionally as long as strain caused by the Pt-Co interface keeps the step edges rough, with a high kink density, and then transforms to 3D growth with straight steps. The results for growth with adsorbed carbon monoxide show that CO acts as a surfactant, causing two-dimensional growth unless heterogeneous nucleation occurs. Again, this process is related to roughening of the steps, being a new mechanism for the action of a surfactant. A scanning tunneling microscopy study at the atomic scale confirms the fact that step descent happens only at kinks and (concave) corners, and in conjunction with simulations allows us to identify some of the relevant atomic-exchange processes. We finally argue that the dependence of the growth mode on the step morphology, together with straightening of the steps by step–step interaction, can lead to an instability of the growth mode. Received: 27 March 2000 / Accepted: 4 September 2000 / Published online: 7 March 2001     

Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine

Different growth mode have been observed for InGaAs/InP grown with trimethylarsine and arsine by Metalorganic Vapor Phase Epitaxy (MOVPE) when changing the carrier gas. The surface has been investigated by Atomic Force Microscope (AFM) for epilayers grown at 600°C under pure hydrogen or a mixture of hydrogen and nitrogen as carrier gas. The step/terrace surface morphology was observed for InP/InP and InGaAs/InP (001) using 0.2° off substrates. InP epilayers grown under nitrogen flow show step-bunched terraces as large as 170 nm. The effect of the group V source for InGaAs/InP has been studied. It is shown that the step edge characteristic of step flow growth appears for lattice-matched InGaAs/InP grown with arsine. When using TMAs and hydrogen as a carrier gas, the growth mode and surface roughness depends greatly on V/III ratio and growth temperature. Under nitrogen flow with the combination of TMI+TMG+TMAs, pit-like defects (5–8 nm deep) are visible at high surface concentration (10⁹–10¹⁰/cm²). When increasing V/III ratio, 3D growth occurs simultaneously with pit-like defects, recovering the whole surface of the sample. Various surface morphology characteristics of InGaAs epilayers assessed by AFM characterisation will be presented and discussed.     

Growth process of β-FeSi2 epitaxial film on Si(1 1 1) by molecular beam epitaxy

We have reported a one step growth of a high quality β-FeSi₂ epitaxial film on hydrogen terminated Si(1 1 1) by using molecular beam epitaxy (MBE) without template layer or post-growth annealing. In the present work, the growth process was studied by analyzing X-ray diffraction (XRD) spectra, reflective high energy electron diffraction (RHEED) and atomic force microscopy (AFM) observations on the samples grown with different growth times from 10 s to 1 h. A phase transformation from γ-FeSi₂ to β-FeSi₂ was confirmed existing in the crystal film growth, as well as the growth mode changing from three-dimensional (3D) to two-dimensional (2D) mode.     

Scattering involving LO phonons in tunneling to the 2D electron system of a delta layer

Tunneling to both one and two or three subbands of the 2D electron system of a delta-doped layer is observed in Al/δ-GaAs structures. The energy positions of 2D subbands in one sample are varied due to the diamagnetic shift or persistent tunneling photoconductivity. The change of the sign of a step in tunneling conductivity is observed at the threshold of the emission of an LO phonon when a successive subband is involved in tunneling. An increase in conductivity (positive step) is observed for inelastic intrasubband electron-phonon scattering. A decrease in conductivity (negative step) is observed when the ordinary processes of inelastic tunneling are supplemented by intersubband transitions of electrons that have tunneled in 2D electron systems with the emission of an LO phonon.     

Si(111)分子束外延的生长动力学过程研究

本文用反射式高能电子衍射(RHEED)强度振荡研究了不同生长温度下Si(111)分子束外延的生长动力学过程,生长温度高于520℃(生长速率约0.15?/S)时,Si(111)外延为“台阶流”生长模式,生长温度低于475℃时,外延为“二维成核”双原子层生长模式,在较低温,甚至室温时,其外延仍为双原子层模式,但是镜向弹性散射束振荡和非弹性散射束振荡的叠加会造成RHEED强度在生长的最初阶段出现“类单原子层”模式的振荡特性。 关键词：     

Dynamical generation of quasicrystals

We present a new general mechanism for a dynamical generation (growth) of quasicrystals (and crystals) in any dimension. The growth process proceeds in elementary steps starting from a chosen seed and the notion of an ideal local configuration. Each step is governed by local information inside of the physical space of the quasicrystal: A point is added to existing quasicrystal points only if its locally defined phase matches at that point a freely chosen continuous phase (gauge) in the quasicrystal space within a given precision. Some 2D examples are shown.Work supported in part by the Natural Science and Engineering Research Council of Canada and by the FCAR of Quebec.     

Grain growth controlled by triple junctions: Effect of number of topological elements

In addition to driving forces due to curvature of grain boundaries there are driving forces acting on triple junctions which also contribute to grain growth. Equations are derived for the rate of change, due to the triple junction forces, of the average area or average volume of 2D and 3D grains, respectively, with a fixed number of topological elements (edges in 2D and faces in 3D). The equations derived are compared with the von Neumann-Mullins equation for 2D curvature driven grain growth and to the extension of that equation to 3D grain growth. In triple junction controlled grain growth, the effect ofn orF is qualitatively the same as in curvature driven growth, with a threshold atn or –F between shrinkage and growth. However, the rates are in general not linear onn orF, and there is a size effect which has a repercursion on the overall growth kinetics.     

Lie Symmetries for Hamiltonian Systems Methodological Approach

This paper proposes an algorithm for the Lie symmetries investigation in the case of a 2D Hamiltonian system. General Lie operators are deduced firstly and, in the the next step, the associated Lie invariants are derived. The 2D Yang-Mills mechanical model is chosen as a test model for this method. PACS: 05.45.-a; 02.30.Ik     

KDP晶体台阶生长动力学的激光干涉实验研究

采用迈克尔逊干涉技术 ,通过测量KDP晶体生长的法向速率和台阶斜率来研究其台阶生长的动力学系数、台阶自由能、溶质在边界层内的扩散特征以及激发晶体生长台阶的位错活性 .实验表明 ,KDP中不同活性位错的台阶动力学系数差异较大 ,例如高活性和低活性台阶动力学系数分别为 10 .3× 10 -2 和 5 .2 1× 10 -2 cm/s,位错源在晶体表面的形状、面积的变化 ,以及Burgers矢量的变化是造成晶体生长动力学测量数据重复性差的主要原因     

Edge directional 2D LMS filter for infrared small target detection

In this paper, we introduce an edge directional 2D least mean squares (LMSs) filter for small target detection in infrared (IR) images. Generally, the 2D LMS filter functions as a background prediction to apply to IR small target detection field. In order to accurately predict background objects as well as regions covered by small targets, the proposed 2D LMS filter take full advantage of edge information of prediction pixels corresponding to surrounding blocks around current filter window. And, to adjust adaptively its step size in the background and small target region, the adaptive region-dependent nonlinear step size is calculated by using the variance of the prediction pixels of the surrounding blocks. This prediction structure and adaptive step size of the proposed 2D LMS filter is applied to the background region including objects such as cloud edge and small target region differently. Through this way, the proposed 2D LMS filter predicts the background excluding small targets. Then, by subtracting the predicted background from the original IR image, small targets can be extracted. Experimental results show that the proposed 2D LMS filter has stronger target extraction and better background suppression ability compared to the existing 2D LMS filters.     

表面形貌对GaAs生长速率测量的影响

本文利用Reflection High Energy Electron Diffraction (RHEED)强度振荡测量GaAs同质外延生长,发现其生长速率随生长厚度按一定指数函数关系衰减.这种衰减与GaAs表面形貌的变化密切相关,表面台阶数量的增加使层状生长模式由2D成核模式逐渐转变为台阶流模式.由于RHEED强度振荡所测的生长速率与表面的粗糙程度密切相关,表面情况改变对生长速率会有一定的影响,导致测量的生长速率逐渐的衰减.根据生长速率随生长厚度的增加而衰减的拟合曲线,可以获得一个准确的生长速率.     

D(A) steps and 2D islands of double layer height in the SiGe(001) system

The surfaces of step graded, partially relaxed Si(1-x)Ge(x)/Si(001) buffers were studied by scanning tunneling microscopy. The surface slips along <110> forming the crosshatch pattern, consisting of bunches of D(A) steps of double layer height. The D(A) steps are present in regions of large surface gradients close to the slips, as well as in planar regions between the slips. These regions are also characterized by the appearance of 2D islands of double layer height. The observations can be explained by assuming the strain due to the misfit dislocations to be locally anisotropic. Anisotropic misfit strain and efficient strain relaxation by the ( 2x8) Ge reconstruction were identified as the main factors causing the unusual step structure.     

Stages of melting of graphene model in two-dimensional space

Spontaneous melting of a perfect crystalline graphene model in 2D space is studied via molecular dynamics simulation. Model containing 10⁴ atoms interacted via long-range bond-order potential (LCBOP) is heated up from 50 to 8,450 K in order to see evolution of various thermodynamic quantities, structural characteristics and occurrence of various structural defects. We find that spontaneous melting of our graphene model in 2D space exhibits a first-order behaviour of the transition from solid 2D graphene sheet into a ring-like structure 2D liquid. Occurrence and clustering of Stone–Wales defects are the first step of melting process followed by breaking of C–C bonds, occurrence/growth of various types of vacancies and multi-membered rings. Unlike that found for melting of a 2D crystal with an isotropic bonding, these defects do not occur homogeneously throughout the system, they have a tendency to aggregate into a region and liquid phase initiates/grows from this region via tearing-like or crack-propagation-like mechanism. Spontaneous melting point of our graphene model occurs at T_m = 7,750 K. The validity of classical nucleation theory and Berezinsky–Kosterlitz–Thouless–Nelson–Halperin–Young (BKTNHY) one for the spontaneous melting of our graphene model in strictly 2D space is discussed.     

Effects of various types of molecular dynamics on 1D and 2D (2)H NMR studied by random walk simulations

By carrying out random walk simulations we systematically study the effects of various types of complex molecular dynamics on (2)H NMR experiments in solids. More precisely, we calculate one-dimensional (1D) (2)H NMR spectra and the results of two dimensional (2D) (2)H NMR experiments in time domain, taking into account isotropic as well as highly restricted motions which involve rotational jumps about different finite angles. Although the dynamical models are chosen to mimic the primary and secondary relaxation in supercooled liquids and glasses, we do not intend to describe experimental results quantitatively but rather to show general effects appearing for complex reorientations. We carefully investigate whether 2D (2)H NMR in time domain, which was originally designed to measure correlation times of ultraslow motions (tau >/= 1 ms), can be used to obtain shorter tau, too. It is demonstrated that an extension of the time window to tau >/= 10 &mgr;s is possible when dealing with exponential relaxation, but that it will fail if there is a distribution of correlation times G(lgtau). Vice versa, we show that 1D (2)H NMR spectra, usually recorded to look at dynamics with tau in the microsecond regime, are also applicable for studying ultraslow motions provided that the loss of correlation is achieved step by step. Therefore, it is useful to carry out 1D and 2D NMR experiments simultaneously in order to reveal the mechanism of complex molecular motions. In addition, we demonstrate that highly restricted dynamics can be clearly observed in 1D spectra and in 2D NMR in time domain if long solid-echo delays and large evolution times are applied, respectively. Finally, unexpected observations are described which appear in the latter experiment when considering very broad distributions G(lgtau). Because of these effects, time scale and geometry of a considered motion cannot be extracted from a straightforward analysis of experimental results. Copyright 2000 Academic Press.     

Emergence of supersteps on KH2PO4 crystal surfaces

In situ AFM investigation of growth on the [100] face of KH2PO4 in the presence of Al(III) and other trivalent metals reveals the emergence of a new type of morphological feature-the superstep. Supersteps, or step bunches consisting of 50-1500 elementary steps, are responsible for growth at all supersaturations and exhibit behavior not predicted by accepted models. The step velocity of the superstep is greater than that of single atomic steps and increases with step height. The steepness of the step riser reaches a limiting value of only 11.8 degrees.